GB1468378A - Method for manufacturing a transistor - Google Patents

Method for manufacturing a transistor

Info

Publication number
GB1468378A
GB1468378A GB1150774A GB1150774A GB1468378A GB 1468378 A GB1468378 A GB 1468378A GB 1150774 A GB1150774 A GB 1150774A GB 1150774 A GB1150774 A GB 1150774A GB 1468378 A GB1468378 A GB 1468378A
Authority
GB
United Kingdom
Prior art keywords
transistor
base region
emitter
pattern
additional
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1150774A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of GB1468378A publication Critical patent/GB1468378A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/316—Testing of analog circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Bipolar Transistors (AREA)

Abstract

1468378 Manufacturing semi-conductor devices FUJITSU Ltd 14 March 1974 [24 March 1973] 11507/74 Heading H1K In the manufacture of a transistor, particularly an ultra high frequency type having an emitter width of 1 Á or less, a monitor pattern transistor is simultaneously formed therewith, the monitor pattern transistor having basically similar emitter and base patterns to the transistor to be manufactured, but having additional portions connected thereto which are such as to enable the probe of a measuring apparatus to make contact therewith in order to measure the direct current characteristics of the monitor transistor, and since these characteristics approximately correspond to those of the transistor to be manufactured it can be determined whether these are satisfactory and the transistor should be completed by forming the electrodes thereof. If the direct current characteristics do not reach the required value an additional emitter diffusion may be effected before completing the device. Fig. 6A, shows the pattern of the transistor to be manufactured having base region 23 and emitter regions 24. Fig. 6B shows the corresponding monitor transistor pattern having emitter regions 27 and an additional wide area region 28 connected thereto, and a first base region 25 and a second base region 26 under the additional emitter region 26. The second base region 26 has a higher impurity concentration and is deeper than the first base region 25, Fig. 6C, and is preferably formed before the base region 25. Preferably the transistors are formed in the same wafer, although, particularly when many transistors are formed simultaneously in a number of wafers, this need not be so. Particular examples are given utilizing a conventional photoetching method and also utilizing a Si 3 N 4 over-etching method.
GB1150774A 1973-03-24 1974-03-14 Method for manufacturing a transistor Expired GB1468378A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3384073A JPS579219B2 (en) 1973-03-24 1973-03-24

Publications (1)

Publication Number Publication Date
GB1468378A true GB1468378A (en) 1977-03-23

Family

ID=12397673

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1150774A Expired GB1468378A (en) 1973-03-24 1974-03-14 Method for manufacturing a transistor

Country Status (3)

Country Link
JP (1) JPS579219B2 (en)
DE (1) DE2414222C3 (en)
GB (1) GB1468378A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5650561A (en) * 1979-10-02 1981-05-07 Mitsubishi Electric Corp Semiconductor device
JPS5656668A (en) * 1979-10-13 1981-05-18 Mitsubishi Electric Corp Manufacture of semiconductor device
DE2949590A1 (en) * 1979-12-10 1981-06-11 Robert Bosch do Brasil, Campinas Integrated circuit with drive and load transistors - incorporates diffused test zones in emitter zones, combined with collector potential contact zone
JPS56134764A (en) * 1980-03-26 1981-10-21 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacturing of bipolar integrated circuit
US5457399A (en) * 1992-12-14 1995-10-10 Hughes Aircraft Company Microwave monolithic integrated circuit fabrication, test method and test probes

Also Published As

Publication number Publication date
DE2414222B2 (en) 1979-04-05
JPS579219B2 (en) 1982-02-20
DE2414222A1 (en) 1974-10-17
DE2414222C3 (en) 1979-11-29
JPS49122672A (en) 1974-11-22

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19930314