JPS57143832A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57143832A
JPS57143832A JP56029155A JP2915581A JPS57143832A JP S57143832 A JPS57143832 A JP S57143832A JP 56029155 A JP56029155 A JP 56029155A JP 2915581 A JP2915581 A JP 2915581A JP S57143832 A JPS57143832 A JP S57143832A
Authority
JP
Japan
Prior art keywords
intense
acid
glass
radical
electrolyte
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56029155A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6322457B2 (enrdf_load_stackoverflow
Inventor
Masami Yokozawa
Hideo Miyagi
Tsuneo Yamaguchi
Yoichi Okabayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electronics Corp
Priority to JP56029155A priority Critical patent/JPS57143832A/ja
Publication of JPS57143832A publication Critical patent/JPS57143832A/ja
Publication of JPS6322457B2 publication Critical patent/JPS6322457B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
JP56029155A 1981-02-27 1981-02-27 Manufacture of semiconductor device Granted JPS57143832A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56029155A JPS57143832A (en) 1981-02-27 1981-02-27 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56029155A JPS57143832A (en) 1981-02-27 1981-02-27 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57143832A true JPS57143832A (en) 1982-09-06
JPS6322457B2 JPS6322457B2 (enrdf_load_stackoverflow) 1988-05-12

Family

ID=12268368

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56029155A Granted JPS57143832A (en) 1981-02-27 1981-02-27 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57143832A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013161910A (ja) * 2012-02-03 2013-08-19 Osaka Prefecture Univ 半導体装置の製造方法、半導体装置、赤外線センサの製造方法および赤外線センサ
WO2017135094A1 (ja) * 2016-02-05 2017-08-10 新電元工業株式会社 半導体装置の製造方法
JP6396598B1 (ja) * 2017-04-19 2018-09-26 新電元工業株式会社 半導体装置の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53120269A (en) * 1977-03-30 1978-10-20 Hitachi Ltd Partial film formation method
JPS5422168A (en) * 1977-07-20 1979-02-19 Toshiba Corp Glass coating method for semiconductor element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53120269A (en) * 1977-03-30 1978-10-20 Hitachi Ltd Partial film formation method
JPS5422168A (en) * 1977-07-20 1979-02-19 Toshiba Corp Glass coating method for semiconductor element

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013161910A (ja) * 2012-02-03 2013-08-19 Osaka Prefecture Univ 半導体装置の製造方法、半導体装置、赤外線センサの製造方法および赤外線センサ
WO2017135094A1 (ja) * 2016-02-05 2017-08-10 新電元工業株式会社 半導体装置の製造方法
WO2017134808A1 (ja) * 2016-02-05 2017-08-10 新電元工業株式会社 半導体装置の製造方法
JP6235190B1 (ja) * 2016-02-05 2017-11-22 新電元工業株式会社 半導体装置の製造方法
CN107533972A (zh) * 2016-02-05 2018-01-02 新电元工业株式会社 半导体装置的制造方法
CN107533972B (zh) * 2016-02-05 2020-07-24 新电元工业株式会社 半导体装置的制造方法
JP6396598B1 (ja) * 2017-04-19 2018-09-26 新電元工業株式会社 半導体装置の製造方法
CN109121423A (zh) * 2017-04-19 2019-01-01 新电元工业株式会社 半导体装置的制造方法
CN109121423B (zh) * 2017-04-19 2020-05-19 新电元工业株式会社 半导体装置的制造方法

Also Published As

Publication number Publication date
JPS6322457B2 (enrdf_load_stackoverflow) 1988-05-12

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