JPS57143826A - Formation of resist pattern on gapped semiconductor substrate - Google Patents
Formation of resist pattern on gapped semiconductor substrateInfo
- Publication number
- JPS57143826A JPS57143826A JP2871981A JP2871981A JPS57143826A JP S57143826 A JPS57143826 A JP S57143826A JP 2871981 A JP2871981 A JP 2871981A JP 2871981 A JP2871981 A JP 2871981A JP S57143826 A JPS57143826 A JP S57143826A
- Authority
- JP
- Japan
- Prior art keywords
- gapped
- semiconductor substrate
- resist pattern
- layer
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 239000000758 substrate Substances 0.000 title abstract 5
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000011347 resin Substances 0.000 abstract 5
- 229920005989 resin Polymers 0.000 abstract 5
- 238000010894 electron beam technology Methods 0.000 abstract 3
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 238000001312 dry etching Methods 0.000 abstract 1
- 238000001035 drying Methods 0.000 abstract 1
- 239000002075 main ingredient Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Drying Of Semiconductors (AREA)
- Electron Beam Exposure (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2871981A JPS57143826A (en) | 1981-02-28 | 1981-02-28 | Formation of resist pattern on gapped semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2871981A JPS57143826A (en) | 1981-02-28 | 1981-02-28 | Formation of resist pattern on gapped semiconductor substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57143826A true JPS57143826A (en) | 1982-09-06 |
| JPH0314172B2 JPH0314172B2 (en, 2012) | 1991-02-26 |
Family
ID=12256246
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2871981A Granted JPS57143826A (en) | 1981-02-28 | 1981-02-28 | Formation of resist pattern on gapped semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57143826A (en, 2012) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59163828A (ja) * | 1983-03-09 | 1984-09-14 | Toshiba Corp | 微細パタ−ンの形成方法 |
| JPS6097624A (ja) * | 1983-11-01 | 1985-05-31 | Matsushita Electronics Corp | 半導体装置の製造方法 |
| JPS63129622A (ja) * | 1986-11-20 | 1988-06-02 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPH0396286A (ja) * | 1989-09-08 | 1991-04-22 | Nippon Telegr & Teleph Corp <Ntt> | パターン化酸化物超伝導膜形成法 |
| JP2016517633A (ja) * | 2013-03-14 | 2016-06-16 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 蒸着で堆積されたフォトレジスト、及びそのための製造及びリソグラフィシステム |
| US10788744B2 (en) | 2013-03-12 | 2020-09-29 | Applied Materials, Inc. | Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor |
-
1981
- 1981-02-28 JP JP2871981A patent/JPS57143826A/ja active Granted
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59163828A (ja) * | 1983-03-09 | 1984-09-14 | Toshiba Corp | 微細パタ−ンの形成方法 |
| JPS6097624A (ja) * | 1983-11-01 | 1985-05-31 | Matsushita Electronics Corp | 半導体装置の製造方法 |
| JPS63129622A (ja) * | 1986-11-20 | 1988-06-02 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPH0396286A (ja) * | 1989-09-08 | 1991-04-22 | Nippon Telegr & Teleph Corp <Ntt> | パターン化酸化物超伝導膜形成法 |
| US10788744B2 (en) | 2013-03-12 | 2020-09-29 | Applied Materials, Inc. | Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor |
| JP2016517633A (ja) * | 2013-03-14 | 2016-06-16 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 蒸着で堆積されたフォトレジスト、及びそのための製造及びリソグラフィシステム |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0314172B2 (en, 2012) | 1991-02-26 |
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