JPS57143819A - Manufacture of polycrystalline silicon semiconductor - Google Patents

Manufacture of polycrystalline silicon semiconductor

Info

Publication number
JPS57143819A
JPS57143819A JP56028421A JP2842181A JPS57143819A JP S57143819 A JPS57143819 A JP S57143819A JP 56028421 A JP56028421 A JP 56028421A JP 2842181 A JP2842181 A JP 2842181A JP S57143819 A JPS57143819 A JP S57143819A
Authority
JP
Japan
Prior art keywords
silicon
casting mold
fusion
polycrystalline silicon
magnetic field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56028421A
Other languages
English (en)
Inventor
Takeshi Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP56028421A priority Critical patent/JPS57143819A/ja
Publication of JPS57143819A publication Critical patent/JPS57143819A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)
JP56028421A 1981-03-02 1981-03-02 Manufacture of polycrystalline silicon semiconductor Pending JPS57143819A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56028421A JPS57143819A (en) 1981-03-02 1981-03-02 Manufacture of polycrystalline silicon semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56028421A JPS57143819A (en) 1981-03-02 1981-03-02 Manufacture of polycrystalline silicon semiconductor

Publications (1)

Publication Number Publication Date
JPS57143819A true JPS57143819A (en) 1982-09-06

Family

ID=12248187

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56028421A Pending JPS57143819A (en) 1981-03-02 1981-03-02 Manufacture of polycrystalline silicon semiconductor

Country Status (1)

Country Link
JP (1) JPS57143819A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999017381A1 (de) * 1997-09-26 1999-04-08 Priesemuth W Verfahren und vorrichtung zum herstellen einer scheibe aus halbleitendem material

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999017381A1 (de) * 1997-09-26 1999-04-08 Priesemuth W Verfahren und vorrichtung zum herstellen einer scheibe aus halbleitendem material

Similar Documents

Publication Publication Date Title
US6299682B1 (en) Method for producing silicon ingot having directional solidification structure and apparatus for producing the same
DE2966164D1 (en) Process and apparatus for producing metallic slurries
PL98068B1 (pl) Sposob wytwarzania plytkowego krysztalu krzemowego
GB1102989A (en) Method and apparatus for producing crystalline semiconductor ribbon
EP0390672A3 (en) Method for heat process of silicon
JPS57143819A (en) Manufacture of polycrystalline silicon semiconductor
GB870214A (en) Improvements in magnetic material and method of fabrication
JP3005633B2 (ja) 太陽電池用多結晶シリコン鋳塊の製造方法
JPS57177507A (en) Heat treatment of amorphous material
GB986748A (en) Zone-by-zone melting of a rod of semi-conductor material
JPS5645894A (en) Reducing method for defect of silicon single crystal
JPS6418988A (en) Single crystal growth unit
GB1358817A (en) None-crucible zone melting of rods of crystalline material
JPS6453732A (en) Method for casting silicon
SU381614A1 (ru) Способ получения пенокварцевого стекла
GB1102389A (en) Process and apparatus for melting and solidifying refractory materials
JPS5645893A (en) Reducing method for defect of silicon single crystal
SE8008687L (sv) Forfarande for uppvermning av ett strenggjutet stalemne for framstellning av kornorienterad kiselstalplat med hog magnetisk metningsflodestethet
GB1006034A (en) A method of producing a rod of semi-conductor material
JPH06305876A (ja) 石英ボートの内面処理方法
JPS6473000A (en) Heat treatment of gallium arsenide single crystal
JPS57118087A (en) Manufacture of single crystal
US3149216A (en) Apparatus for the preparation of high purity silicon
JPS5564958A (en) Feeder heat retaining method by induction heating
JPS5637292A (en) Crystal growing method