JPS57143795A - Nonvolatile semiconductor storage device - Google Patents

Nonvolatile semiconductor storage device

Info

Publication number
JPS57143795A
JPS57143795A JP3021081A JP3021081A JPS57143795A JP S57143795 A JPS57143795 A JP S57143795A JP 3021081 A JP3021081 A JP 3021081A JP 3021081 A JP3021081 A JP 3021081A JP S57143795 A JPS57143795 A JP S57143795A
Authority
JP
Japan
Prior art keywords
voltage
write
boosted
time
row
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3021081A
Other languages
English (en)
Japanese (ja)
Other versions
JPH033317B2 (enrdf_load_stackoverflow
Inventor
Masamichi Asano
Hiroshi Iwahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3021081A priority Critical patent/JPS57143795A/ja
Priority to GB8205687A priority patent/GB2094086B/en
Priority to US06/353,515 priority patent/US4506350A/en
Priority to DE3249671A priority patent/DE3249671C2/de
Priority to DE3207485A priority patent/DE3207485C2/de
Publication of JPS57143795A publication Critical patent/JPS57143795A/ja
Priority to US06/630,863 priority patent/US4597062A/en
Priority to GB08420735A priority patent/GB2144006B/en
Publication of JPH033317B2 publication Critical patent/JPH033317B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits

Landscapes

  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
JP3021081A 1981-03-03 1981-03-03 Nonvolatile semiconductor storage device Granted JPS57143795A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP3021081A JPS57143795A (en) 1981-03-03 1981-03-03 Nonvolatile semiconductor storage device
GB8205687A GB2094086B (en) 1981-03-03 1982-02-26 Non-volatile semiconductor memory system
US06/353,515 US4506350A (en) 1981-03-03 1982-03-01 Non-volatile semiconductor memory system
DE3249671A DE3249671C2 (enrdf_load_stackoverflow) 1981-03-03 1982-03-02
DE3207485A DE3207485C2 (de) 1981-03-03 1982-03-02 Nichtflüchtige Halbleiter-Speichervorrichtung
US06/630,863 US4597062A (en) 1981-03-03 1984-07-16 Non-volatile semiconductor memory system
GB08420735A GB2144006B (en) 1981-03-03 1984-08-15 Non-volatile semiconductor memory system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3021081A JPS57143795A (en) 1981-03-03 1981-03-03 Nonvolatile semiconductor storage device

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP59037512A Division JPS59185091A (ja) 1984-02-29 1984-02-29 不揮発性半導体記憶装置
JP59037513A Division JPS59185092A (ja) 1984-02-29 1984-02-29 電圧切換回路

Publications (2)

Publication Number Publication Date
JPS57143795A true JPS57143795A (en) 1982-09-06
JPH033317B2 JPH033317B2 (enrdf_load_stackoverflow) 1991-01-18

Family

ID=12297362

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3021081A Granted JPS57143795A (en) 1981-03-03 1981-03-03 Nonvolatile semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS57143795A (enrdf_load_stackoverflow)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5952497A (ja) * 1982-09-17 1984-03-27 Nec Corp デコ−ダ回路
JPS6045999A (ja) * 1983-08-24 1985-03-12 Hitachi Ltd 半導体不揮発性記憶装置
JPS6050697A (ja) * 1983-08-30 1985-03-20 Toshiba Corp 半導体集積回路
JPS6074558A (ja) * 1983-08-31 1985-04-26 ナシヨナル・セミコンダクタ−・コ−ポレ−シヨン 内部高電圧（Ｖｐｐ）上昇制御回路
JPS62234297A (ja) * 1986-09-29 1987-10-14 Nec Corp プログラム電圧供給回路
JPS6318592A (ja) * 1986-07-09 1988-01-26 Toshiba Corp 不揮発性半導体メモリ
JPS6323297A (ja) * 1987-05-15 1988-01-30 Nec Corp 信号線駆動回路
JPH04111299A (ja) * 1990-08-30 1992-04-13 Nec Corp 半導体記憶集積回路

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5952497A (ja) * 1982-09-17 1984-03-27 Nec Corp デコ−ダ回路
JPS6045999A (ja) * 1983-08-24 1985-03-12 Hitachi Ltd 半導体不揮発性記憶装置
JPS6050697A (ja) * 1983-08-30 1985-03-20 Toshiba Corp 半導体集積回路
JPS6074558A (ja) * 1983-08-31 1985-04-26 ナシヨナル・セミコンダクタ−・コ−ポレ−シヨン 内部高電圧（Ｖｐｐ）上昇制御回路
JPS6318592A (ja) * 1986-07-09 1988-01-26 Toshiba Corp 不揮発性半導体メモリ
JPS62234297A (ja) * 1986-09-29 1987-10-14 Nec Corp プログラム電圧供給回路
JPS6323297A (ja) * 1987-05-15 1988-01-30 Nec Corp 信号線駆動回路
JPH04111299A (ja) * 1990-08-30 1992-04-13 Nec Corp 半導体記憶集積回路

Also Published As

Publication number Publication date
JPH033317B2 (enrdf_load_stackoverflow) 1991-01-18

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