JPS57141936A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57141936A JPS57141936A JP2651381A JP2651381A JPS57141936A JP S57141936 A JPS57141936 A JP S57141936A JP 2651381 A JP2651381 A JP 2651381A JP 2651381 A JP2651381 A JP 2651381A JP S57141936 A JPS57141936 A JP S57141936A
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- contact hole
- sih4
- wirings
- breaking
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
Abstract
PURPOSE:To prevent the breaking of wire of the underlayer wiring to be connected and to obtain high reliability for the subject semiconductor device by a method wherein an insulating film, consisting of a metal compound to be provided on an underlying wiring, is formed in such a manner that a metal ingredient will gradually become low-densed as it approached the upper part of the wiring, and the section of a contact hole is formed in a cone shape. CONSTITUTION:For example, an underlying wiring layer 22 is formed on a GaAs substrate 21, and a nitride film 23 is formed on the wiring layer 22 by decompression CVD method using SiH4/NH3 reaction gas, for example. The nitride film 23 is deposited in such a manner that the density of an Si ingredient will be gradually reduced as it approaches the upper part by slowly reducing the quantity of flow of SiH4, for example. Then, a photoetching is performed on a contact hole 24 using a resist film 27, for example, as a mask, subsequently resist film 27 is removed, and the wirings are connected by providing an upperlayer wiring. Accordingly, the shape of the section of the contact hole 24 can be formed into a gently-sloped cone shape, and the trouble casued by the breaking of wire and the like of the wirings on the upper layer can be prevented.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2651381A JPS57141936A (en) | 1981-02-25 | 1981-02-25 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2651381A JPS57141936A (en) | 1981-02-25 | 1981-02-25 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57141936A true JPS57141936A (en) | 1982-09-02 |
Family
ID=12195551
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2651381A Pending JPS57141936A (en) | 1981-02-25 | 1981-02-25 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57141936A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100388575C (en) * | 2003-03-17 | 2008-05-14 | 北京邮电大学 | Method for making structure of wedge chamber and parallel chamber in indium phosphide based photoelectronic device |
US20170170357A1 (en) * | 2011-11-25 | 2017-06-15 | Saint-Augustin Canada Electric Inc. | Method for preventing an electrical shortage in a semiconductor layer stack, thin substrate cpv cell, and solar cell assembly |
-
1981
- 1981-02-25 JP JP2651381A patent/JPS57141936A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100388575C (en) * | 2003-03-17 | 2008-05-14 | 北京邮电大学 | Method for making structure of wedge chamber and parallel chamber in indium phosphide based photoelectronic device |
US20170170357A1 (en) * | 2011-11-25 | 2017-06-15 | Saint-Augustin Canada Electric Inc. | Method for preventing an electrical shortage in a semiconductor layer stack, thin substrate cpv cell, and solar cell assembly |
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