JPS57141641A - Formation of positive pattern - Google Patents

Formation of positive pattern

Info

Publication number
JPS57141641A
JPS57141641A JP56027481A JP2748181A JPS57141641A JP S57141641 A JPS57141641 A JP S57141641A JP 56027481 A JP56027481 A JP 56027481A JP 2748181 A JP2748181 A JP 2748181A JP S57141641 A JPS57141641 A JP S57141641A
Authority
JP
Japan
Prior art keywords
layer
resist
etching
worked
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56027481A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6364771B2 (enrdf_load_stackoverflow
Inventor
Yasuhiro Yoneda
Tateo Kitamura
Jiro Naito
Toshisuke Kitakoji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56027481A priority Critical patent/JPS57141641A/ja
Publication of JPS57141641A publication Critical patent/JPS57141641A/ja
Publication of JPS6364771B2 publication Critical patent/JPS6364771B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP56027481A 1981-02-26 1981-02-26 Formation of positive pattern Granted JPS57141641A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56027481A JPS57141641A (en) 1981-02-26 1981-02-26 Formation of positive pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56027481A JPS57141641A (en) 1981-02-26 1981-02-26 Formation of positive pattern

Publications (2)

Publication Number Publication Date
JPS57141641A true JPS57141641A (en) 1982-09-02
JPS6364771B2 JPS6364771B2 (enrdf_load_stackoverflow) 1988-12-13

Family

ID=12222308

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56027481A Granted JPS57141641A (en) 1981-02-26 1981-02-26 Formation of positive pattern

Country Status (1)

Country Link
JP (1) JPS57141641A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5965430A (ja) * 1982-10-06 1984-04-13 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
WO1986005284A1 (en) * 1985-03-07 1986-09-12 Hughes Aircraft Company Polysiloxane resist for ion beam and electron beam lithography

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5965430A (ja) * 1982-10-06 1984-04-13 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
WO1986005284A1 (en) * 1985-03-07 1986-09-12 Hughes Aircraft Company Polysiloxane resist for ion beam and electron beam lithography

Also Published As

Publication number Publication date
JPS6364771B2 (enrdf_load_stackoverflow) 1988-12-13

Similar Documents

Publication Publication Date Title
JPS5655571A (en) Fine pattern forming method of aluminum film or aluminum alloy film
JPS57168246A (en) Formation of negative pattern
JPS57168247A (en) Formation of negative pattern
JPS57141641A (en) Formation of positive pattern
JPS57141642A (en) Formation of pattern
JPS57157523A (en) Forming method for pattern
JPS57160127A (en) Manufacture of transcribe mask for x-ray exposure
JPS57130431A (en) Manufacture of semiconductor device
JPS57202535A (en) Formation of negative resist pattern
JPS53120527A (en) Forming method of positive type radiation sensitive material layer
JPS5461478A (en) Chromium plate
JPS53112671A (en) Forming method for pattern
JPS5642346A (en) Manufacture of semiconductor device
JPS5629231A (en) Radiation sensitive material and pattern forming method
JPS57211143A (en) Formation of micropattern
JPS5622942A (en) Diffraction grating and its manufacture
JPS5548933A (en) Forming of mesa groove
JPS54162460A (en) Electrode forming method
JPS57186335A (en) Forming method for pattern
JPS5421272A (en) Metal photo mask
JPS6428821A (en) Fine pattern formation
JPS57122530A (en) Photoetching method
JPS54142077A (en) Manufacture of semiconductor device
JPS5326575A (en) Ion etching method
JPS556404A (en) Forming method for pattern