JPS57139984A - Buried photo emitting and receiving semiconductor integrated device - Google Patents

Buried photo emitting and receiving semiconductor integrated device

Info

Publication number
JPS57139984A
JPS57139984A JP2583681A JP2583681A JPS57139984A JP S57139984 A JPS57139984 A JP S57139984A JP 2583681 A JP2583681 A JP 2583681A JP 2583681 A JP2583681 A JP 2583681A JP S57139984 A JPS57139984 A JP S57139984A
Authority
JP
Japan
Prior art keywords
layer
type
region
grown
incident light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2583681A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6358388B2 (enrdf_load_stackoverflow
Inventor
Mitsuhiro Kitamura
Ikuo Mito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2583681A priority Critical patent/JPS57139984A/ja
Publication of JPS57139984A publication Critical patent/JPS57139984A/ja
Publication of JPS6358388B2 publication Critical patent/JPS6358388B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2583681A 1981-02-24 1981-02-24 Buried photo emitting and receiving semiconductor integrated device Granted JPS57139984A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2583681A JPS57139984A (en) 1981-02-24 1981-02-24 Buried photo emitting and receiving semiconductor integrated device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2583681A JPS57139984A (en) 1981-02-24 1981-02-24 Buried photo emitting and receiving semiconductor integrated device

Publications (2)

Publication Number Publication Date
JPS57139984A true JPS57139984A (en) 1982-08-30
JPS6358388B2 JPS6358388B2 (enrdf_load_stackoverflow) 1988-11-15

Family

ID=12176936

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2583681A Granted JPS57139984A (en) 1981-02-24 1981-02-24 Buried photo emitting and receiving semiconductor integrated device

Country Status (1)

Country Link
JP (1) JPS57139984A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014120633A (ja) * 2012-12-17 2014-06-30 Canon Inc スーパールミネッセントダイオード、スーパールミネッセントダイオードを備えている光干渉断層撮像装置、及びスーパールミネッセントダイオードの制御方法
JP2023503861A (ja) * 2019-11-26 2023-02-01 スマート フォトニクス ホールディングス ビー．ブイ． 光集積回路の導波路構造

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5214393A (en) * 1975-07-16 1977-02-03 Post Office Laser and optical detector

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5214393A (en) * 1975-07-16 1977-02-03 Post Office Laser and optical detector

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014120633A (ja) * 2012-12-17 2014-06-30 Canon Inc スーパールミネッセントダイオード、スーパールミネッセントダイオードを備えている光干渉断層撮像装置、及びスーパールミネッセントダイオードの制御方法
JP2023503861A (ja) * 2019-11-26 2023-02-01 スマート フォトニクス ホールディングス ビー．ブイ． 光集積回路の導波路構造
US12292595B2 (en) 2019-11-26 2025-05-06 SMART Photonics Holding B.V. Waveguide structure for a photonic integrated circuit

Also Published As

Publication number Publication date
JPS6358388B2 (enrdf_load_stackoverflow) 1988-11-15

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