JPS57139982A - Semiconductor laser element - Google Patents

Semiconductor laser element

Info

Publication number
JPS57139982A
JPS57139982A JP2583481A JP2583481A JPS57139982A JP S57139982 A JPS57139982 A JP S57139982A JP 2583481 A JP2583481 A JP 2583481A JP 2583481 A JP2583481 A JP 2583481A JP S57139982 A JPS57139982 A JP S57139982A
Authority
JP
Japan
Prior art keywords
layer
grown
semiconductor laser
type inp
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2583481A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6148277B2 (enrdf_load_stackoverflow
Inventor
Hidenori Nomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2583481A priority Critical patent/JPS57139982A/ja
Publication of JPS57139982A publication Critical patent/JPS57139982A/ja
Publication of JPS6148277B2 publication Critical patent/JPS6148277B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H01S5/2235—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface with a protrusion

Landscapes

  • Semiconductor Lasers (AREA)
JP2583481A 1981-02-24 1981-02-24 Semiconductor laser element Granted JPS57139982A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2583481A JPS57139982A (en) 1981-02-24 1981-02-24 Semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2583481A JPS57139982A (en) 1981-02-24 1981-02-24 Semiconductor laser element

Publications (2)

Publication Number Publication Date
JPS57139982A true JPS57139982A (en) 1982-08-30
JPS6148277B2 JPS6148277B2 (enrdf_load_stackoverflow) 1986-10-23

Family

ID=12176882

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2583481A Granted JPS57139982A (en) 1981-02-24 1981-02-24 Semiconductor laser element

Country Status (1)

Country Link
JP (1) JPS57139982A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4948753A (en) * 1984-03-27 1990-08-14 Matsushita Electric Industrial Co., Ltd. Method of producing stripe-structure semiconductor laser
US5128276A (en) * 1990-02-19 1992-07-07 U.S. Philips Corporation Method of manufacturing a semiconductor device comprising a mesa
US6674416B2 (en) 1998-07-17 2004-01-06 Omron Corporation Small-sized sensor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4948753A (en) * 1984-03-27 1990-08-14 Matsushita Electric Industrial Co., Ltd. Method of producing stripe-structure semiconductor laser
US5128276A (en) * 1990-02-19 1992-07-07 U.S. Philips Corporation Method of manufacturing a semiconductor device comprising a mesa
US6674416B2 (en) 1998-07-17 2004-01-06 Omron Corporation Small-sized sensor

Also Published As

Publication number Publication date
JPS6148277B2 (enrdf_load_stackoverflow) 1986-10-23

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