JPS57139940A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57139940A
JPS57139940A JP2519481A JP2519481A JPS57139940A JP S57139940 A JPS57139940 A JP S57139940A JP 2519481 A JP2519481 A JP 2519481A JP 2519481 A JP2519481 A JP 2519481A JP S57139940 A JPS57139940 A JP S57139940A
Authority
JP
Japan
Prior art keywords
pattern
coated
substrate
silicon nitride
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2519481A
Other languages
Japanese (ja)
Inventor
Masaharu Yorikane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2519481A priority Critical patent/JPS57139940A/en
Publication of JPS57139940A publication Critical patent/JPS57139940A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To form a minute conductor layer with high performance by coating the first insulating layer selectively shaped onto a substrate with the second insulating layer so that the side surface is at a right angle and forming the conductor layer having approximately equal height to the side surface of the second insulating layer in a self-matching shape. CONSTITUTION:The Si substrate 101 is coated with the SiO2 film 103 while removing openings 102a-102c. The SiO2 film 103 is coated with the silicon nitride film 104 so that the side surface is at a right angle to the substrate. The whole surface is coated with Al105. The Al105 is etched, and a pattern in which Al adheres on at least one side surfaces of the silicon nitride film 104 is formed in a self-matching shape. The pattern of the Al105 is separated, and electrode wiring is obtained. The height of the film layer of the silicon nitride film 104 and height after forming the pattern of the Al105 are equalized approximately. Accordingly, the minute conductor pattern is shaped.
JP2519481A 1981-02-23 1981-02-23 Semiconductor device Pending JPS57139940A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2519481A JPS57139940A (en) 1981-02-23 1981-02-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2519481A JPS57139940A (en) 1981-02-23 1981-02-23 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57139940A true JPS57139940A (en) 1982-08-30

Family

ID=12159148

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2519481A Pending JPS57139940A (en) 1981-02-23 1981-02-23 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57139940A (en)

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