JPS57139921A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57139921A JPS57139921A JP2510381A JP2510381A JPS57139921A JP S57139921 A JPS57139921 A JP S57139921A JP 2510381 A JP2510381 A JP 2510381A JP 2510381 A JP2510381 A JP 2510381A JP S57139921 A JPS57139921 A JP S57139921A
- Authority
- JP
- Japan
- Prior art keywords
- ion
- oxidized film
- resist
- implanted
- thinly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000005530 etching Methods 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 238000005468 ion implantation Methods 0.000 abstract 2
- 238000000059 patterning Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2510381A JPS57139921A (en) | 1981-02-23 | 1981-02-23 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2510381A JPS57139921A (en) | 1981-02-23 | 1981-02-23 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57139921A true JPS57139921A (en) | 1982-08-30 |
Family
ID=12156582
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2510381A Pending JPS57139921A (en) | 1981-02-23 | 1981-02-23 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57139921A (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6246517A (ja) * | 1985-08-23 | 1987-02-28 | Rohm Co Ltd | イオン打込みにおけるマスク構造 |
| JPH05160355A (ja) * | 1991-05-03 | 1993-06-25 | Hyundai Electron Ind Co Ltd | ツインウェルを有するｃｍｏｓの製造方法 |
-
1981
- 1981-02-23 JP JP2510381A patent/JPS57139921A/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6246517A (ja) * | 1985-08-23 | 1987-02-28 | Rohm Co Ltd | イオン打込みにおけるマスク構造 |
| JPH05160355A (ja) * | 1991-05-03 | 1993-06-25 | Hyundai Electron Ind Co Ltd | ツインウェルを有するｃｍｏｓの製造方法 |
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