JPS57136754A - Wafer treating device for ion implanting device - Google Patents

Wafer treating device for ion implanting device

Info

Publication number
JPS57136754A
JPS57136754A JP56020857A JP2085781A JPS57136754A JP S57136754 A JPS57136754 A JP S57136754A JP 56020857 A JP56020857 A JP 56020857A JP 2085781 A JP2085781 A JP 2085781A JP S57136754 A JPS57136754 A JP S57136754A
Authority
JP
Japan
Prior art keywords
chamber
disc
wefers
evacuated
ion implantation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56020857A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6340352B2 (enrdf_load_stackoverflow
Inventor
Nobuhiro Yoshioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Nihon Shinku Gijutsu KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc, Nihon Shinku Gijutsu KK filed Critical Ulvac Inc
Priority to JP56020857A priority Critical patent/JPS57136754A/ja
Publication of JPS57136754A publication Critical patent/JPS57136754A/ja
Publication of JPS6340352B2 publication Critical patent/JPS6340352B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/18Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
JP56020857A 1981-02-17 1981-02-17 Wafer treating device for ion implanting device Granted JPS57136754A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56020857A JPS57136754A (en) 1981-02-17 1981-02-17 Wafer treating device for ion implanting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56020857A JPS57136754A (en) 1981-02-17 1981-02-17 Wafer treating device for ion implanting device

Publications (2)

Publication Number Publication Date
JPS57136754A true JPS57136754A (en) 1982-08-23
JPS6340352B2 JPS6340352B2 (enrdf_load_stackoverflow) 1988-08-10

Family

ID=12038777

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56020857A Granted JPS57136754A (en) 1981-02-17 1981-02-17 Wafer treating device for ion implanting device

Country Status (1)

Country Link
JP (1) JPS57136754A (enrdf_load_stackoverflow)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5697954A (en) * 1980-01-07 1981-08-07 Hitachi Ltd Ion-implantation device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5697954A (en) * 1980-01-07 1981-08-07 Hitachi Ltd Ion-implantation device

Also Published As

Publication number Publication date
JPS6340352B2 (enrdf_load_stackoverflow) 1988-08-10

Similar Documents

Publication Publication Date Title
GB2272995B (en) Method for making or treating a semiconductor
JPS57149748A (en) Treating device for substrate
DE3064623D1 (en) Ion source in a vacuum chamber and method for its operation
IN171303B (enrdf_load_stackoverflow)
IN172161B (enrdf_load_stackoverflow)
JPS57136754A (en) Wafer treating device for ion implanting device
JPS6431971A (en) Vacuum treatment device
JPS5638587A (en) Vacuum device
JPS6472533A (en) Manufacture of single crystal semiconductor substrate
JPS52123174A (en) Specimen scanning method for ion implantation
JPS6433932A (en) Etching apparatus
JPS5521553A (en) Device for fabricating film
JPS5735681A (en) Vacuum device
JPS6454725A (en) Heat treating method for compound semiconductor substrate
JP2710340B2 (ja) イオン注入装置
IN170972B (enrdf_load_stackoverflow)
JPS57152653A (en) Wafer processing equipment for ion implanting device
JPS6428373A (en) Vacuum treating device
JPS55109958A (en) Mass spectrometer
JPS5697954A (en) Ion-implantation device
JPS5463413A (en) Non-vaporization getter pump
JPS6473074A (en) Sputtering device
JPS5650520A (en) Processing method of semiconductor substrate
JPS56152283A (en) Cryostat
JPS6484666A (en) Manufacture of high melting metal silicide gate mosfet