JPS6433932A - Etching apparatus - Google Patents

Etching apparatus

Info

Publication number
JPS6433932A
JPS6433932A JP18930387A JP18930387A JPS6433932A JP S6433932 A JPS6433932 A JP S6433932A JP 18930387 A JP18930387 A JP 18930387A JP 18930387 A JP18930387 A JP 18930387A JP S6433932 A JPS6433932 A JP S6433932A
Authority
JP
Japan
Prior art keywords
mask
substrate
magnet
holding
magnetic field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18930387A
Other languages
Japanese (ja)
Inventor
Hiroyoshi Tanaka
Yuji Mukai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP18930387A priority Critical patent/JPS6433932A/en
Publication of JPS6433932A publication Critical patent/JPS6433932A/en
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To reduce the deformation due to heat of a mask, to perform accurate patterning and to prevent the yield of spark discharge, by constituting the mask with a magnetic material such as nickel and iron, inputting a magnetic field generated with a magnet, which is provided at the lower part of a substrate, and performing the holding and non-holding of the mask. CONSTITUTION:A vacuum exhausting system and an ion generating device are provided. A substrate 15 is provided so as to face the projecting port of the ion generating device. Radical such as ions can be projected in this apparatus. A patterned mask 19, through which ions can pass, is provided between the substrate 15 and the ion projecting port. The mask 19 is constituted with a magnetic body such as nickel and iron. A magnetic field, which is generated with a magnet 16 provided at the lower part of the substrate and reaches the mask 19, is inputted from the outside. Thus the holding and non-holding of the mask are performed. For example, said magnet 16 is an electromagnet. The magnetic field is controlled with an electric input device 18. The mask 19 is suspened with springs. When the magnetic field of the magnet 16 is cut, the substrate 15 is conveyed.
JP18930387A 1987-07-29 1987-07-29 Etching apparatus Pending JPS6433932A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18930387A JPS6433932A (en) 1987-07-29 1987-07-29 Etching apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18930387A JPS6433932A (en) 1987-07-29 1987-07-29 Etching apparatus

Publications (1)

Publication Number Publication Date
JPS6433932A true JPS6433932A (en) 1989-02-03

Family

ID=16239077

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18930387A Pending JPS6433932A (en) 1987-07-29 1987-07-29 Etching apparatus

Country Status (1)

Country Link
JP (1) JPS6433932A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006346372A (en) * 2005-05-19 2006-12-28 Duskin Co Ltd Drinking water extraction and production machine
WO2008100139A1 (en) * 2007-02-13 2008-08-21 Fujifilm Manufacturing Europe B.V. Substrate plasma treatment using magnetic mask device
US8323753B2 (en) 2006-05-30 2012-12-04 Fujifilm Manufacturing Europe B.V. Method for deposition using pulsed atmospheric pressure glow discharge
US8445897B2 (en) 2008-02-08 2013-05-21 Fujifilm Manufacturing Europe B.V. Method for manufacturing a multi-layer stack structure with improved WVTR barrier property
US8702999B2 (en) 2008-02-01 2014-04-22 Fujifilm Manufacturing Europe B.V. Method and apparatus for plasma surface treatment of a moving substrate

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006346372A (en) * 2005-05-19 2006-12-28 Duskin Co Ltd Drinking water extraction and production machine
US8323753B2 (en) 2006-05-30 2012-12-04 Fujifilm Manufacturing Europe B.V. Method for deposition using pulsed atmospheric pressure glow discharge
WO2008100139A1 (en) * 2007-02-13 2008-08-21 Fujifilm Manufacturing Europe B.V. Substrate plasma treatment using magnetic mask device
US8338307B2 (en) 2007-02-13 2012-12-25 Fujifilm Manufacturing Europe B.V. Substrate plasma treatment using magnetic mask device
US8702999B2 (en) 2008-02-01 2014-04-22 Fujifilm Manufacturing Europe B.V. Method and apparatus for plasma surface treatment of a moving substrate
EP2235735B1 (en) * 2008-02-01 2015-09-30 Fujifilm Manufacturing Europe B.V. Method and apparatus for plasma surface treatment of a moving substrate
US8445897B2 (en) 2008-02-08 2013-05-21 Fujifilm Manufacturing Europe B.V. Method for manufacturing a multi-layer stack structure with improved WVTR barrier property

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