JPS57135796A - Method of adjusting oxygen concentration and distribution in silicon growing by czochralski method - Google Patents

Method of adjusting oxygen concentration and distribution in silicon growing by czochralski method

Info

Publication number
JPS57135796A
JPS57135796A JP56216184A JP21618481A JPS57135796A JP S57135796 A JPS57135796 A JP S57135796A JP 56216184 A JP56216184 A JP 56216184A JP 21618481 A JP21618481 A JP 21618481A JP S57135796 A JPS57135796 A JP S57135796A
Authority
JP
Japan
Prior art keywords
distribution
oxygen concentration
adjusting oxygen
silicon growing
czochralski
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56216184A
Other languages
English (en)
Other versions
JPH0321515B2 (ja
Inventor
Aren Furederitsuku Rojiyaa
Uofuoodo Muudei Jierii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Monsanto Co
Original Assignee
Monsanto Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Monsanto Co filed Critical Monsanto Co
Publication of JPS57135796A publication Critical patent/JPS57135796A/ja
Publication of JPH0321515B2 publication Critical patent/JPH0321515B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP56216184A 1980-12-29 1981-12-28 Method of adjusting oxygen concentration and distribution in silicon growing by czochralski method Granted JPS57135796A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US22092480A 1980-12-29 1980-12-29

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP4111762A Division JP2705867B2 (ja) 1980-12-29 1992-04-30 シリコン棒の製造方法

Publications (2)

Publication Number Publication Date
JPS57135796A true JPS57135796A (en) 1982-08-21
JPH0321515B2 JPH0321515B2 (ja) 1991-03-22

Family

ID=22825580

Family Applications (2)

Application Number Title Priority Date Filing Date
JP56216184A Granted JPS57135796A (en) 1980-12-29 1981-12-28 Method of adjusting oxygen concentration and distribution in silicon growing by czochralski method
JP4111762A Expired - Lifetime JP2705867B2 (ja) 1980-12-29 1992-04-30 シリコン棒の製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP4111762A Expired - Lifetime JP2705867B2 (ja) 1980-12-29 1992-04-30 シリコン棒の製造方法

Country Status (6)

Country Link
EP (1) EP0055619B1 (ja)
JP (2) JPS57135796A (ja)
KR (1) KR850001941B1 (ja)
CA (1) CA1191075A (ja)
DE (1) DE3170781D1 (ja)
MX (1) MX159794A (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61151088A (ja) * 1984-12-24 1986-07-09 Toshiba Corp 単結晶の製造方法
JPH0193489A (ja) * 1987-10-01 1989-04-12 Kyushu Electron Metal Co Ltd 半導体用単結晶の製造方法
JPH01160893A (ja) * 1987-12-16 1989-06-23 Mitsubishi Metal Corp シリコン単結晶中の酸素濃度制御方法
DE4030551A1 (de) * 1989-09-29 1991-04-11 Osaka Titanium Verfahren zur herstellung von silicium-einkristallen
JPH0532480A (ja) * 1991-02-20 1993-02-09 Sumitomo Metal Ind Ltd 結晶成長方法
JPH05194083A (ja) * 1980-12-29 1993-08-03 Memc Electron Materials Inc シリコン棒の製造方法
JPH05194077A (ja) * 1991-08-14 1993-08-03 Memc Electron Materials Inc 単結晶シリコンロッドの製法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4511428A (en) * 1982-07-09 1985-04-16 International Business Machines Corporation Method of controlling oxygen content and distribution in grown silicon crystals
JPS62105998A (ja) * 1985-10-31 1987-05-16 Sony Corp シリコン基板の製法
JPH02263793A (ja) * 1989-04-05 1990-10-26 Nippon Steel Corp 酸化誘起積層欠陥の発生し難いシリコン単結晶及びその製造方法
US5215620A (en) * 1989-09-19 1993-06-01 Shin-Etsu Handotai Co. Ltd. Method for pulling a silicon single crystal by imposing a periodic rotation rate on a constant rotation rate
JPH0699225B2 (ja) * 1989-10-23 1994-12-07 信越半導体株式会社 シリコン単結晶引上げ方法
JPH05194075A (ja) * 1992-01-24 1993-08-03 Nec Corp 単結晶育成法
US5593498A (en) * 1995-06-09 1997-01-14 Memc Electronic Materials, Inc. Apparatus for rotating a crucible of a crystal pulling machine
JP3927786B2 (ja) 2001-10-30 2007-06-13 シルトロニック・ジャパン株式会社 単結晶の製造方法
KR101022918B1 (ko) * 2009-02-18 2011-03-16 주식회사 엘지실트론 무네킹 공정을 이용한 단결정 제조 방법
CN113789567B (zh) * 2021-09-17 2022-11-25 安徽光智科技有限公司 一种大尺寸锗单晶生长方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55140795A (en) * 1979-04-19 1980-11-04 Nippon Telegr & Teleph Corp <Ntt> Automatic crystal growing device
JPS5727996A (en) * 1980-06-26 1982-02-15 Ibm Manufacture of single crystal

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4040895A (en) * 1975-10-22 1977-08-09 International Business Machines Corporation Control of oxygen in silicon crystals
DE2758888C2 (de) * 1977-12-30 1983-09-22 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung reinster Siliciumeinkristalle
CA1191075A (en) * 1980-12-29 1985-07-30 Roger A. Frederick Method for regulating concentration and distribution of oxygen in czochralski grown silicon

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55140795A (en) * 1979-04-19 1980-11-04 Nippon Telegr & Teleph Corp <Ntt> Automatic crystal growing device
JPS5727996A (en) * 1980-06-26 1982-02-15 Ibm Manufacture of single crystal

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05194083A (ja) * 1980-12-29 1993-08-03 Memc Electron Materials Inc シリコン棒の製造方法
JPS61151088A (ja) * 1984-12-24 1986-07-09 Toshiba Corp 単結晶の製造方法
JPH0544440B2 (ja) * 1984-12-24 1993-07-06 Tokyo Shibaura Electric Co
JPH0193489A (ja) * 1987-10-01 1989-04-12 Kyushu Electron Metal Co Ltd 半導体用単結晶の製造方法
JPH01160893A (ja) * 1987-12-16 1989-06-23 Mitsubishi Metal Corp シリコン単結晶中の酸素濃度制御方法
DE4030551A1 (de) * 1989-09-29 1991-04-11 Osaka Titanium Verfahren zur herstellung von silicium-einkristallen
DE4030551C2 (ja) * 1989-09-29 1992-12-17 Osaka Titanium Co. Ltd., Amagasaki, Hyogo, Jp
JPH0532480A (ja) * 1991-02-20 1993-02-09 Sumitomo Metal Ind Ltd 結晶成長方法
JPH05194077A (ja) * 1991-08-14 1993-08-03 Memc Electron Materials Inc 単結晶シリコンロッドの製法
JPH0818898B2 (ja) * 1991-08-14 1996-02-28 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 単結晶シリコンロッドの製法

Also Published As

Publication number Publication date
EP0055619A1 (en) 1982-07-07
DE3170781D1 (en) 1985-07-04
JP2705867B2 (ja) 1998-01-28
JPH05194083A (ja) 1993-08-03
KR850001941B1 (ko) 1985-12-31
CA1191075A (en) 1985-07-30
JPH0321515B2 (ja) 1991-03-22
MX159794A (es) 1989-08-28
KR830008552A (ko) 1983-12-10
EP0055619B1 (en) 1985-05-29

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