JPS57133684A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57133684A
JPS57133684A JP56018679A JP1867981A JPS57133684A JP S57133684 A JPS57133684 A JP S57133684A JP 56018679 A JP56018679 A JP 56018679A JP 1867981 A JP1867981 A JP 1867981A JP S57133684 A JPS57133684 A JP S57133684A
Authority
JP
Japan
Prior art keywords
region
layer
regions
capacity
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56018679A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6259474B2 (enrdf_load_stackoverflow
Inventor
Mitsuo Tone
Norimichi Katsumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Corp
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Corp, Pioneer Electronic Corp filed Critical Pioneer Corp
Priority to JP56018679A priority Critical patent/JPS57133684A/ja
Publication of JPS57133684A publication Critical patent/JPS57133684A/ja
Publication of JPS6259474B2 publication Critical patent/JPS6259474B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP56018679A 1981-02-10 1981-02-10 Manufacture of semiconductor device Granted JPS57133684A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56018679A JPS57133684A (en) 1981-02-10 1981-02-10 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56018679A JPS57133684A (en) 1981-02-10 1981-02-10 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57133684A true JPS57133684A (en) 1982-08-18
JPS6259474B2 JPS6259474B2 (enrdf_load_stackoverflow) 1987-12-11

Family

ID=11978289

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56018679A Granted JPS57133684A (en) 1981-02-10 1981-02-10 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57133684A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS6259474B2 (enrdf_load_stackoverflow) 1987-12-11

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