JPS57132377A - Photocoupler - Google Patents
PhotocouplerInfo
- Publication number
- JPS57132377A JPS57132377A JP1775881A JP1775881A JPS57132377A JP S57132377 A JPS57132377 A JP S57132377A JP 1775881 A JP1775881 A JP 1775881A JP 1775881 A JP1775881 A JP 1775881A JP S57132377 A JPS57132377 A JP S57132377A
- Authority
- JP
- Japan
- Prior art keywords
- light
- lead frame
- pipe
- face
- electrically insulated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 abstract 2
- 239000011347 resin Substances 0.000 abstract 2
- 229920005989 resin Polymers 0.000 abstract 2
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000005259 measurement Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
Abstract
PURPOSE:To increase the conversion efficiency between input and output as well as to increase the dielectric strength for the subject photocoupler by a method wherein a light pipe is formed by coating an electrically insulated material of a low refracrive index on the surface of a pole-shaped transparent electrically insulated material. CONSTITUTION:Chips 1 and 11 of light-emitting and light-receiving elements are mounted on the end face 31 of each lead frame in such a manner that they are opposed face to face and optically coupled by the light pipe using transparent resin 7'. The outer circumference of the light pipe is surrounded by a thin air- gapped layer, and the difference of refractive indexes between the air-gapped layer and the transparent resin interface will be used to serve as the wall of light. The durable surface on which the chip 1 of the light-emitting diode and the lead frame whereon the photo transistor chip 11 are mounted has a cup-like shape. The sectional measurements of the pipe 18 is formed in the minimum size with which the end part of the lead frame on the side of both elements will be covered. Accordingly, the propagative path of light by total reflection becomes short, and the emitted light can be caught by the cup effectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1775881A JPS57132377A (en) | 1981-02-09 | 1981-02-09 | Photocoupler |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1775881A JPS57132377A (en) | 1981-02-09 | 1981-02-09 | Photocoupler |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57132377A true JPS57132377A (en) | 1982-08-16 |
Family
ID=11952620
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1775881A Pending JPS57132377A (en) | 1981-02-09 | 1981-02-09 | Photocoupler |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57132377A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01161780A (en) * | 1987-12-18 | 1989-06-26 | Toshiba Corp | Plastic sealed photocoupler |
| EP0513908A2 (en) * | 1991-05-17 | 1992-11-19 | Koninklijke Philips Electronics N.V. | Opto-electronic coupler |
-
1981
- 1981-02-09 JP JP1775881A patent/JPS57132377A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01161780A (en) * | 1987-12-18 | 1989-06-26 | Toshiba Corp | Plastic sealed photocoupler |
| EP0513908A2 (en) * | 1991-05-17 | 1992-11-19 | Koninklijke Philips Electronics N.V. | Opto-electronic coupler |
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