JPS57119251A - Gas sensor element - Google Patents

Gas sensor element

Info

Publication number
JPS57119251A
JPS57119251A JP56004851A JP485181A JPS57119251A JP S57119251 A JPS57119251 A JP S57119251A JP 56004851 A JP56004851 A JP 56004851A JP 485181 A JP485181 A JP 485181A JP S57119251 A JPS57119251 A JP S57119251A
Authority
JP
Japan
Prior art keywords
electrode
voltage
gas
sensing
solid electrolyte
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56004851A
Other languages
Japanese (ja)
Inventor
Katsuhiro Teraishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP56004851A priority Critical patent/JPS57119251A/en
Publication of JPS57119251A publication Critical patent/JPS57119251A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4148—Integrated circuits therefor, e.g. fabricated by CMOS processing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electrochemistry (AREA)
  • Molecular Biology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Computer Hardware Design (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

PURPOSE:To make it possible to drive with low electricity consumption and low voltage a gas sensor element that has a thin film solid electrolyte at the gate section of a MOS type FET construction and improve response time and reliability by applying the driving voltage with a pulse wave form symmetric with respect to both plus and minus. CONSTITUTION:A gas sensing element of MOS type FET construction is formed by providing a grid-mesh type metallic electrode 6 on n type source, drain 2, field oxide 3, metallic gate electrode 4 and solid eleactrolyte 5 on a P type Si wafer 1. One of LaF3, CeF3, NaF3, and PrF3 is selected as the solid electrolyte layers. A thin film battery construction is thus formed with the electrode 6/solid electrolyte layer 5/ electrode 4. When the element is exposed to a gas in the environment with a given voltage (for example, 250 WV for O2 gas and 50WV for NO gas) applied between the electrodes 4 and 6, current flows between them and the voltage of the electrode 6 works as the gate voltage. After sensing reversed voltage of the shape equivalent to that of sensing is applied to the electrode in order to return it to the state right before the sensing to use it again.
JP56004851A 1981-01-16 1981-01-16 Gas sensor element Pending JPS57119251A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56004851A JPS57119251A (en) 1981-01-16 1981-01-16 Gas sensor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56004851A JPS57119251A (en) 1981-01-16 1981-01-16 Gas sensor element

Publications (1)

Publication Number Publication Date
JPS57119251A true JPS57119251A (en) 1982-07-24

Family

ID=11595172

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56004851A Pending JPS57119251A (en) 1981-01-16 1981-01-16 Gas sensor element

Country Status (1)

Country Link
JP (1) JPS57119251A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS492596A (en) * 1972-04-19 1974-01-10
JPS57119253A (en) * 1981-01-16 1982-07-24 Seiko Epson Corp Gas sensor element
JPS57119252A (en) * 1981-01-16 1982-07-24 Seiko Epson Corp Gas sensor element

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS492596A (en) * 1972-04-19 1974-01-10
JPS57119253A (en) * 1981-01-16 1982-07-24 Seiko Epson Corp Gas sensor element
JPS57119252A (en) * 1981-01-16 1982-07-24 Seiko Epson Corp Gas sensor element

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