JPS57119252A - Gas sensor element - Google Patents

Gas sensor element

Info

Publication number
JPS57119252A
JPS57119252A JP56004852A JP485281A JPS57119252A JP S57119252 A JPS57119252 A JP S57119252A JP 56004852 A JP56004852 A JP 56004852A JP 485281 A JP485281 A JP 485281A JP S57119252 A JPS57119252 A JP S57119252A
Authority
JP
Japan
Prior art keywords
gas
electrode
layer
type
agcl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56004852A
Other languages
Japanese (ja)
Other versions
JPH0116379B2 (en
Inventor
Katsuhiro Teraishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP56004852A priority Critical patent/JPS57119252A/en
Publication of JPS57119252A publication Critical patent/JPS57119252A/en
Publication of JPH0116379B2 publication Critical patent/JPH0116379B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4148—Integrated circuits therefor, e.g. fabricated by CMOS processing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electrochemistry (AREA)
  • Molecular Biology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Computer Hardware Design (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

PURPOSE:To make it possible to sense various gases in a short time at room temperature through adaption of battery reaction by installing an AgCl layer as thin film solid electrolyte film at the gate section of a MOS type FET construction. CONSTITUTION:An n type source, drain 2 and field oxide layer (SiO2 layer ) 3 are provided on a P type Si wafer, and on the layer 3 a metallic gate electrode 4 of the metal selected from Au, Ag, Bi and Cu and a thin film solid electrolyte 5 of AgCl to cover the electrode 4 are formed. Next, a grid-mesh type metallic electrode 6 of the same material as the electrode 4 is formed to produce a gas sensing element. A characteristic voltage for a gas to be sensed, for example, 200WV for Cl2 gas, 250WV for O2 gas, etc. is applied between the electrodes 4 and 6 to operate the FFT section. With this construction a gas sensing element that is capable of sensing gas quickly at room temperature with low electricity comsumption and has high reliability is provided.
JP56004852A 1981-01-16 1981-01-16 Gas sensor element Granted JPS57119252A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56004852A JPS57119252A (en) 1981-01-16 1981-01-16 Gas sensor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56004852A JPS57119252A (en) 1981-01-16 1981-01-16 Gas sensor element

Publications (2)

Publication Number Publication Date
JPS57119252A true JPS57119252A (en) 1982-07-24
JPH0116379B2 JPH0116379B2 (en) 1989-03-24

Family

ID=11595200

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56004852A Granted JPS57119252A (en) 1981-01-16 1981-01-16 Gas sensor element

Country Status (1)

Country Link
JP (1) JPS57119252A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57119251A (en) * 1981-01-16 1982-07-24 Seiko Epson Corp Gas sensor element
EP1770392A1 (en) * 2005-09-30 2007-04-04 Micronas GmbH Gas sensitive field effect transistor for the detection of chlorine

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57119251A (en) * 1981-01-16 1982-07-24 Seiko Epson Corp Gas sensor element
EP1770392A1 (en) * 2005-09-30 2007-04-04 Micronas GmbH Gas sensitive field effect transistor for the detection of chlorine

Also Published As

Publication number Publication date
JPH0116379B2 (en) 1989-03-24

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