JPS57207834A - Temperature sensor - Google Patents
Temperature sensorInfo
- Publication number
- JPS57207834A JPS57207834A JP9362181A JP9362181A JPS57207834A JP S57207834 A JPS57207834 A JP S57207834A JP 9362181 A JP9362181 A JP 9362181A JP 9362181 A JP9362181 A JP 9362181A JP S57207834 A JPS57207834 A JP S57207834A
- Authority
- JP
- Japan
- Prior art keywords
- temp
- voltage
- resistance
- change
- voltage vgs
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Indication And Recording Devices For Special Purposes And Tariff Metering Devices (AREA)
Abstract
PURPOSE:To obtain a simple temp. sensor with high accuracy which is not influenced by a temp. change of thermocouples such as resistance and secular change by detecting pinch-off voltage making the border where drain electric current depending on the MOSFET temp. does not flow. CONSTITUTION:In an MOSFET G such as a depletion type, drain voltage VD and source resistance R2 are set so that drain electric current ID becomes infinitesimal and voltage VGS between gate sources which becomes the pinch-off voltage depending on temp. is detected as voltage at both sides of the resistance R2. The voltage VGS and reference voltage are treated at a differential and operating amplifier 1 and temp. is detected. In the case, an additional guantity of the current I in accordance with the temp. rise of FETGG does not almost influence to the voltage VGS and a temp. detection is exactly performed. Further, the voltage VGS is not affected by resistance of the connected measuring circuit and the temp. characteristics of the amplifier and secular change. By such a way, a simple temp. sensor with high accuracy which is not influenced by a temp. change of thermocouples such as resistance and secular change is obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9362181A JPS57207834A (en) | 1981-06-17 | 1981-06-17 | Temperature sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9362181A JPS57207834A (en) | 1981-06-17 | 1981-06-17 | Temperature sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57207834A true JPS57207834A (en) | 1982-12-20 |
Family
ID=14087386
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9362181A Pending JPS57207834A (en) | 1981-06-17 | 1981-06-17 | Temperature sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57207834A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1995002172A1 (en) * | 1993-07-07 | 1995-01-19 | Siemens Aktiengesellschaft | Temperature sensor with a p-n junction |
JP2009180529A (en) * | 2008-01-29 | 2009-08-13 | Mitsubishi Electric Corp | Infrared sensor, infrared solid-state image sensor, and control method of infrared sensor |
JP2009210523A (en) * | 2008-03-06 | 2009-09-17 | Mitsubishi Electric Corp | Infrared solid state imaging device |
JP2010041159A (en) * | 2008-08-01 | 2010-02-18 | Sumitomo Electric Device Innovations Inc | Semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS503794A (en) * | 1973-05-16 | 1975-01-16 |
-
1981
- 1981-06-17 JP JP9362181A patent/JPS57207834A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS503794A (en) * | 1973-05-16 | 1975-01-16 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1995002172A1 (en) * | 1993-07-07 | 1995-01-19 | Siemens Aktiengesellschaft | Temperature sensor with a p-n junction |
US5821599A (en) * | 1993-07-07 | 1998-10-13 | Siemens Aktiengesellschaft | Temperature sensor having a p-n junction |
JP2009180529A (en) * | 2008-01-29 | 2009-08-13 | Mitsubishi Electric Corp | Infrared sensor, infrared solid-state image sensor, and control method of infrared sensor |
JP2009210523A (en) * | 2008-03-06 | 2009-09-17 | Mitsubishi Electric Corp | Infrared solid state imaging device |
JP2010041159A (en) * | 2008-08-01 | 2010-02-18 | Sumitomo Electric Device Innovations Inc | Semiconductor device |
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