JPS5711812A - Preparation of carbide film resistor - Google Patents

Preparation of carbide film resistor

Info

Publication number
JPS5711812A
JPS5711812A JP8555080A JP8555080A JPS5711812A JP S5711812 A JPS5711812 A JP S5711812A JP 8555080 A JP8555080 A JP 8555080A JP 8555080 A JP8555080 A JP 8555080A JP S5711812 A JPS5711812 A JP S5711812A
Authority
JP
Japan
Prior art keywords
gas
carbide
sputtering
target material
impurity gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8555080A
Other languages
Japanese (ja)
Other versions
JPS6322042B2 (en
Inventor
Kazushi Yamamoto
Takeshi Nagai
Ikuo Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP8555080A priority Critical patent/JPS5711812A/en
Publication of JPS5711812A publication Critical patent/JPS5711812A/en
Publication of JPS6322042B2 publication Critical patent/JPS6322042B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
    • H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0635—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Thermistors And Varistors (AREA)

Abstract

PURPOSE:To prepare a carbide film resistor having the same composition as the target material, by sputtering a carbide resistor material to an insulating substrate kept at a specific temperature, under the condition to increase the resistivity of the formed film by the reaction with a small amount of impurity gas added to rare gas. CONSTITUTION:The electrode 2 is formed on an insulating substrate 1 such as alumina, etc. by baking electrically conductive paste such as Ag, etc. The substrate is sputtered with the target material such as sintered silicon carbide for the carbide resistor material in a rare gas atmosphere (e.g. Ar gas) mixed with a small amount of impurity gas (e.g. N2 gas). The sputtering is carried out at a substrate temperature of 500-800 deg.C, in a vacuum chamber evacuated to 10<-6>Torr under the sputtering pressure of e.g. 10<-2>Torr. The amount of the impurity gas is about several %. Below this range, the resistivity or the resistance decreases with increasing amount of the impurity gas, and the produced film has the same composition as the target material which is free from reaction products.
JP8555080A 1980-06-23 1980-06-23 Preparation of carbide film resistor Granted JPS5711812A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8555080A JPS5711812A (en) 1980-06-23 1980-06-23 Preparation of carbide film resistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8555080A JPS5711812A (en) 1980-06-23 1980-06-23 Preparation of carbide film resistor

Publications (2)

Publication Number Publication Date
JPS5711812A true JPS5711812A (en) 1982-01-21
JPS6322042B2 JPS6322042B2 (en) 1988-05-10

Family

ID=13861940

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8555080A Granted JPS5711812A (en) 1980-06-23 1980-06-23 Preparation of carbide film resistor

Country Status (1)

Country Link
JP (1) JPS5711812A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5363553A (en) * 1976-11-18 1978-06-07 Matsushita Electric Ind Co Ltd Method of manufacturing thermistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5363553A (en) * 1976-11-18 1978-06-07 Matsushita Electric Ind Co Ltd Method of manufacturing thermistor

Also Published As

Publication number Publication date
JPS6322042B2 (en) 1988-05-10

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