JPS57117246A - Treatment of semiconductor wafer - Google Patents

Treatment of semiconductor wafer

Info

Publication number
JPS57117246A
JPS57117246A JP344081A JP344081A JPS57117246A JP S57117246 A JPS57117246 A JP S57117246A JP 344081 A JP344081 A JP 344081A JP 344081 A JP344081 A JP 344081A JP S57117246 A JPS57117246 A JP S57117246A
Authority
JP
Japan
Prior art keywords
treatment
semiconductor wafer
rays
sides
ion implanted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP344081A
Other languages
Japanese (ja)
Inventor
Kazuo Nishiyama
Michio Arai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP344081A priority Critical patent/JPS57117246A/en
Publication of JPS57117246A publication Critical patent/JPS57117246A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Abstract

PURPOSE:To perform necessary treatment suppressing dispersion of impurity, by a high speed treatment, irradiating semiconductor wafer on both sides suspended inside a heating furnace with high power rays. CONSTITUTION:A semiconductor wafer 1 to be heat treated is suspended exposing both main surfaces A and B via a susceptor 6 in a quartz tube 2 to which N2 gas is supplied at the time of the heat treatment. The wafer 1 is irradiated on the both sides 1A, 1B with rays from a tungsten lamp or a halogen lamp 4. Supporting members 3 of lamps are movable in relation to each other. Ion implanted region is electrically activated in a short time without redistributing the ion implanted impurity.
JP344081A 1981-01-13 1981-01-13 Treatment of semiconductor wafer Pending JPS57117246A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP344081A JPS57117246A (en) 1981-01-13 1981-01-13 Treatment of semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP344081A JPS57117246A (en) 1981-01-13 1981-01-13 Treatment of semiconductor wafer

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP764887A Division JPS62271420A (en) 1987-01-16 1987-01-16 Treatment equipment for semiconductor substrate

Publications (1)

Publication Number Publication Date
JPS57117246A true JPS57117246A (en) 1982-07-21

Family

ID=11557406

Family Applications (1)

Application Number Title Priority Date Filing Date
JP344081A Pending JPS57117246A (en) 1981-01-13 1981-01-13 Treatment of semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS57117246A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6132420A (en) * 1984-07-12 1986-02-15 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of annealing gallium arsenide substrate
JPS6294925A (en) * 1985-10-21 1987-05-01 Nec Corp Heat treatment device
JPH0232535A (en) * 1988-07-21 1990-02-02 Kyushu Electron Metal Co Ltd Manufacture of silicon substrate for semiconductor device
JP2010003801A (en) * 2008-06-19 2010-01-07 Dainippon Screen Mfg Co Ltd Heat treatment device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JAPANESE JOURNAL OF APPLIED PHYSICS=1980 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6132420A (en) * 1984-07-12 1986-02-15 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of annealing gallium arsenide substrate
JPS6294925A (en) * 1985-10-21 1987-05-01 Nec Corp Heat treatment device
JPH0232535A (en) * 1988-07-21 1990-02-02 Kyushu Electron Metal Co Ltd Manufacture of silicon substrate for semiconductor device
JP2010003801A (en) * 2008-06-19 2010-01-07 Dainippon Screen Mfg Co Ltd Heat treatment device

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