JPS57117237A - Manufacturing device for semiconductor device - Google Patents

Manufacturing device for semiconductor device

Info

Publication number
JPS57117237A
JPS57117237A JP274481A JP274481A JPS57117237A JP S57117237 A JPS57117237 A JP S57117237A JP 274481 A JP274481 A JP 274481A JP 274481 A JP274481 A JP 274481A JP S57117237 A JPS57117237 A JP S57117237A
Authority
JP
Japan
Prior art keywords
wafer
bottom plate
solution
temperature
treating solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP274481A
Other languages
Japanese (ja)
Inventor
Tatsumi Suganuma
Terumi Rokushiya
Kensho Kyoto
Masatoshi Matsushita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP274481A priority Critical patent/JPS57117237A/en
Publication of JPS57117237A publication Critical patent/JPS57117237A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck

Abstract

PURPOSE:To treat a wafer with chemicals excellently and efficiently by using a small amount of a treating solution by heating and agitating the chemicals supplied to the wafer. CONSTITUTION:A heating and diffusing means 10 is positioned at the upper section of a wafer chuck 8, and a bottom plate 12 is heated by means of a heater 11. When a proper amount of the developing solution is fed to a nozzle 14 from a temperature regulating section while turning the wafer 9, the solution flows between the bottom plate 12 and the wafer 9 from the lower end of the nozzle 14, and the wafer 9 is developed. In this case, the developing solution held by surface tension is temperature-regulated by the bottom plate 12 heated, and agitated by a groove formed to the bottom plate 12. Accordingly, the temperature drop of the treating solution can be corrected. The temperature of the treating solution supplied to the wafer can be also be held. The treating solution is substituted excellently.
JP274481A 1981-01-13 1981-01-13 Manufacturing device for semiconductor device Pending JPS57117237A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP274481A JPS57117237A (en) 1981-01-13 1981-01-13 Manufacturing device for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP274481A JPS57117237A (en) 1981-01-13 1981-01-13 Manufacturing device for semiconductor device

Publications (1)

Publication Number Publication Date
JPS57117237A true JPS57117237A (en) 1982-07-21

Family

ID=11537853

Family Applications (1)

Application Number Title Priority Date Filing Date
JP274481A Pending JPS57117237A (en) 1981-01-13 1981-01-13 Manufacturing device for semiconductor device

Country Status (1)

Country Link
JP (1) JPS57117237A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132620A (en) * 1983-01-20 1984-07-30 Seiko Instr & Electronics Ltd Developing apparatus for semiconductor wafer
JPS59145525A (en) * 1983-02-09 1984-08-21 Matsushita Electronics Corp Resist development
JPS63269533A (en) * 1987-04-27 1988-11-07 Nec Corp Developing device of semiconductor substrate
JPH01122125A (en) * 1987-11-05 1989-05-15 Seiko Epson Corp Method and apparatus for wet treating semiconductor substrate
US6265323B1 (en) 1998-02-23 2001-07-24 Kabushiki Kaisha Toshiba Substrate processing method and apparatus

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132620A (en) * 1983-01-20 1984-07-30 Seiko Instr & Electronics Ltd Developing apparatus for semiconductor wafer
JPS59145525A (en) * 1983-02-09 1984-08-21 Matsushita Electronics Corp Resist development
JPH0144011B2 (en) * 1983-02-09 1989-09-25 Matsushita Electronics Corp
JPS63269533A (en) * 1987-04-27 1988-11-07 Nec Corp Developing device of semiconductor substrate
JPH01122125A (en) * 1987-11-05 1989-05-15 Seiko Epson Corp Method and apparatus for wet treating semiconductor substrate
US6265323B1 (en) 1998-02-23 2001-07-24 Kabushiki Kaisha Toshiba Substrate processing method and apparatus

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