KR200159379Y1 - Tube heating apparatus - Google Patents
Tube heating apparatus Download PDFInfo
- Publication number
- KR200159379Y1 KR200159379Y1 KR2019970007402U KR19970007402U KR200159379Y1 KR 200159379 Y1 KR200159379 Y1 KR 200159379Y1 KR 2019970007402 U KR2019970007402 U KR 2019970007402U KR 19970007402 U KR19970007402 U KR 19970007402U KR 200159379 Y1 KR200159379 Y1 KR 200159379Y1
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- South Korea
- Prior art keywords
- processing liquid
- tube
- heating apparatus
- rotating plate
- tube heating
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/048—Overflow-type cleaning, e.g. tanks in which the liquid flows over the tank in which the articles are placed
Abstract
본 고안은 튜브 내부에 흐르는 처리액의 온도를 일정하게 유지시키어 주는 튜브 가열장치에 관한 것으로, 상단과 하단이 튜브에 연결설치되어 내부에 처리액이 흐르며, 하부에 홈이 형성되는 몸체와, 몸체 내부에 설치되며, 하부에 형성된 돌기가 상기 홈에 삽입되어 처리액이 표면을 따라 흐르면서 회전되는 회전판과, 몸체 가장자리에 설치되어 처리액을 가열시키는 가열부로 구비되어서, 몸체 내로 유입된 처리액이 회전판 표면을 따라 흐르면서 회전판이 회전됨에 따라 처리액의 유속이 제어된 것이 특징이다.The present invention relates to a tube heating device that maintains a constant temperature of the processing liquid flowing in the tube, the upper and lower ends are connected to the tube and the processing liquid flows inside, the body is formed in the lower groove, the body It is installed inside, the projection formed in the lower portion is inserted into the groove is rotated while the processing liquid flows along the surface and the heating plate is installed on the body edge to heat the processing liquid, the processing liquid introduced into the body is rotating plate The flow rate of the processing liquid is controlled as the rotating plate rotates while flowing along the surface.
Description
본 고안은 반도체 제조 장비인 웨스테이션에 사용되는 튜브 가열장치에 관한 것으로, 특히 웨이퍼를 세정하는 처리조 내로 처리액 공급시에 처리액의 원활한 순환공급 및 적정온도유지에 적당한 튜브 가열장치에 관한 것이다.The present invention relates to a tube heating apparatus used in a wet station, a semiconductor manufacturing equipment, and more particularly, to a tube heating apparatus suitable for smooth circulation of a processing liquid and proper temperature maintenance when the processing liquid is supplied into a processing tank for cleaning a wafer. .
일반적으로, 웨스테이션은 처리조 내로 공급된 처리액이 적정온도로 유지되어 웨이퍼와 웨이퍼 사이로 공급되면서 세정공정이 진행을 진행시킨 후, 처리조 밖으로 배출되며, 배출된 처리액은 튜브를 통하여 처리조 내로 재공급된다.In general, the wet station is a process liquid supplied into the treatment tank is maintained at an appropriate temperature is supplied between the wafer and the wafer while the cleaning process proceeds, and then discharged out of the treatment tank, the discharged treatment liquid is discharged through the tube through the tube Resupply into.
이때, 튜브 내로 흐르는 처리액은 처리조 내에서 공정이 진행될 시 보다 그 온도가 크게 하강되므로 별도의 가열장치를 통하여 일정온도를 유지시켜 주어야 한다.At this time, the treatment liquid flowing into the tube has to be maintained at a constant temperature through a separate heating device because the temperature is significantly lower than when the process proceeds in the treatment tank.
제1a도는 일반적인 웨스테이션에서의 처리액의 순환흐름을 보인 도면이고, 제1b도는 종래기술에 따른 튜브 가열장치의 단면도다.Figure 1a is a view showing a circulating flow of the processing liquid in a conventional wet station, Figure 1b is a cross-sectional view of the tube heating apparatus according to the prior art.
이하, 첨부된 도면을 참조하여 설명하겠다.Hereinafter, with reference to the accompanying drawings will be described.
종래의 튜브 가열장치(a)는 제1a도와 제1b도와 같이, 상단 및 하단에 각각의 튜브(11-1)(11-2)가 연결설치된 처리액공급구(15) 및 처리액배출구(13)를 가지며 내부에 처리액이 흐르는 몸체(10)와, 몸체(10) 내에 설치되어 처리액공급구(15)를 통해 공급되는 처리액이 표면을 따라 흐르도록 하는 흐름조절판(17)과, 몸체(10) 가장자리에 설치되어 처리액을 가열시키는 가열부(19)와, 몸체(10) 내의 처리액 온도를 감지하여 처리액이 적정온도로 유지되도록 가열부(19)를 제어하는 온도감지센서(21)로 구성된다.Conventional tube heating apparatus (a) is a processing liquid supply port 15 and the processing liquid discharge port 13, each tube 11-1, 11-2 is installed at the top and bottom, as shown in Figure 1a and 1b And a flow control plate 17 installed in the body 10 to allow the processing liquid supplied through the processing liquid supply port 15 to flow along the surface thereof. (10) a heating unit 19 installed at an edge to heat the processing liquid, and a temperature sensing sensor for controlling the heating unit 19 to sense the processing liquid temperature in the body 10 to maintain the processing liquid at an appropriate temperature ( 21).
상기에서, 흐름조절판(17)은 석영재질로 형성한다.In the above, the flow control plate 17 is formed of a quartz material.
제1a도를 참조하여 종래의 튜브 가열장치(a)를 갖는 웨스테이션 내에서 처리액이 가열 및 순환되는 과정을 살펴보면 다음과 같다.Referring to Figure 1a looks at the process of the process liquid is heated and circulated in the wet station having a conventional tube heater (a) as follows.
처리조(20)의 하부를 통해 공급되는 처리액, 즉, 순수(DeIonized Water)에 의해 희석된 H3PO4등의 세정용액을 150℃ 정도로 유지되도록 가열하면서 웨이퍼를 세정하는 공정이 진행된다. 이 때, 처리조(20) 상부에 설치된 순수공급관(도면에 도시되지 않음)을 통해 증발된 양만큼의 순수를 별도로 공급하여 준다.The process of cleaning the wafer while heating the treatment solution supplied through the lower portion of the treatment tank 20, that is, a cleaning solution such as H 3 PO 4 diluted with pure water (DeIonized Water) is maintained at about 150 ° C. is performed. At this time, through the pure water supply pipe (not shown in the figure) installed in the upper portion of the treatment tank 20 is supplied separately the amount of pure water.
이어서, 세정공정시 웨이퍼로부터 떨어진 반응 부산물 등의 이물질이 혼합된 처리액은 처리조(20)의 하부를 통해 연속해서 공급되는 처리액에 의해 오버플로워링 (overflowing)된다. 그리고, 오버플로워링된 이물질이 혼합된 처리액은 튜브(11)를 통해 일방향으로 흐르면서 펌프(23)에 의해 펌핑되고 필터(25)에서 이물질이 필터링된다.Subsequently, the processing liquid mixed with foreign substances such as reaction by-products separated from the wafer during the cleaning process is overflowed by the processing liquid continuously supplied through the lower portion of the processing tank 20. In addition, the treatment liquid mixed with the overflowed foreign matter is pumped by the pump 23 while flowing in one direction through the tube 11, and the foreign matter is filtered in the filter 25.
그리고, 튜브를 통해 흐르는 처리액의 손실된 열을 보상하기 위하여 처리액은 튜브 가열장치(a)에서 일정온도로 가열된 후 처리조(20) 내로 재순환된다.Then, in order to compensate for the lost heat of the processing liquid flowing through the tube, the processing liquid is heated to a predetermined temperature in the tube heating apparatus (a) and then recycled into the processing tank 20.
이때, 튜브 가열장치(a)는 웨스테이션 내에서 공간 확보를 위해 수직으로 설치된다.At this time, the tube heater (a) is installed vertically to secure space in the westation.
튜브 가열장치(a)는 처리액이 튜브(11-2)로부터 처리액공급구(15)를 통하여 몸체(10) 내부로 공급시키며, 몸체(10) 내부로 공급된 처리액은 흐름조절판(17) 표면을 따라 흐르면서 처리액배출구(13)를 통해 상단에 연결된 튜브(11-1)내로 배출되도록 한다.Tube heating apparatus (a) is a processing liquid is supplied from the tube (11-2) through the processing liquid supply port 15 into the body 10, the processing liquid supplied into the body 10 is the flow control plate (17) Flow along the surface to be discharged into the tube (11-1) connected to the top through the treatment liquid outlet (13).
이때, 흐름조절판(17)은 처리액공급구(15)를 통해 유입되는 처리액이 처리액배출구(13)를 통해 보다 원활하게 배출되도록 처리액에 미치는 저항을 감소시키어 흐름속도 즉, 유속을 빠르게 한다.At this time, the flow control plate 17 reduces the resistance to the processing liquid so that the processing liquid introduced through the processing liquid supply port 15 is discharged more smoothly through the processing liquid discharge port 13, so that the flow rate, that is, the flow rate is increased. do.
그리고 몸체(10) 외부에는 가열부(19)가 설치되어져서 몸체(10) 내에 흐르는 처리액의 온도를 일정온도로 가열시키는 데, 이 가열부(19)는 온도감지센서(21)에 의해 제어되면서 처리액을 적정온도 범위까지만 상승시킨다.In addition, a heating unit 19 is installed outside the body 10 to heat the temperature of the processing liquid flowing in the body 10 to a predetermined temperature, which is controlled by the temperature sensor 21. While raising the treatment liquid only to the optimum temperature range.
이어서 처리액배출구(13)를 통해 상단의 튜브(11-1)로 유출된 처리액은 처리조(20) 내로 재순환된다.Subsequently, the processing liquid flowing out of the upper tube 11-1 through the processing liquid discharge port 13 is recycled into the processing tank 20.
그러나, 종래의 튜브 가열장치에서는 처리액을 처리조 내로 재순환 공급할 시, 단지 펌프의 펌핑력에만 영향을 의존하기 때문에 펌프 자체에 많은 무리가 따른다.However, in the conventional tube heating apparatus, when recirculating and supplying the treatment liquid into the treatment tank, the pump itself is heavily loaded because only the pumping force of the pump is affected.
따라서 이를 보완하기 위해 처리조 밖으로 유출된 처리액을 흐름조절판 표면을 따라 흘려주지만 처리액 유속에 그다지 도움이 되지 못한다.Therefore, in order to compensate for this, the treatment liquid flowing out of the treatment tank flows along the surface of the flow control plate, but it does not help the treatment liquid flow rate very much.
또한, 공정 특성 상, 처리조 내의 처리액은 150℃ 이상의 온도를 유지하여야 하지만, 처리조 내로 공급되기 전에 처리액의 온도가 하강되어 그에 따른 열손실 및 처리액의 적정온도를 유지하기가 어려운 문제점이 발생된다.In addition, due to the process characteristics, the treatment liquid in the treatment tank must maintain a temperature of 150 ℃ or more, but the temperature of the treatment liquid is lowered before being supplied into the treatment tank, it is difficult to maintain the heat loss and the proper temperature of the treatment liquid accordingly. Is generated.
본 고안은 이러한 문제점을 해결하고자 안출된 것으로, 펌프에 무리를 주지 않으면서도 처리액의 유속을 빠르게 하여 열손실을 보상함으로써 처리액이 원활한 순환공급 및 처리액의 적정온도가 유지가능한 튜브 가열장치를 목적으로 한다.The present invention was devised to solve such a problem, and a tube heating device capable of smoothly supplying a circulating fluid and maintaining a proper temperature of the treating liquid by compensating for heat loss by accelerating the flow rate of the treating liquid without causing a pump. The purpose.
상기의 목적을 달성하고자, 본 고안은 튜브 내부에 흐르는 처리액의 온도를 이정하게 유지시키어 주는 튜브 가열장치에 관한 것으로, 상단과 하단이 튜브에 연결설치되어 내부에 처리액이 흐르며, 하부에 홈이 형성되는 몸체와, 몸체 내부에 설치되며, 하부에 형성된 돌기가 상기 홈에 삽입되어 처리액이 표면을 따라 흐르면서 회전되는 회전판과, 몸체 가장자리에 설치되어 처리액을 가열시키는 가열부로 구비되어서, 몸체 내로 유입된 처리액이 회전판 표면을 따라 흐르면서 회전판이 회전됨에 따라 처리액의 유속이 제어된 것이 특징이다.In order to achieve the above object, the present invention relates to a tube heating device that maintains the temperature of the processing liquid flowing inside the tube in a stable manner, the upper and lower ends are connected to the tube, the processing liquid flows inside, the groove at the bottom The body is formed, and the inside of the body, the projection formed in the lower portion is inserted into the groove is provided with a rotating plate rotated while the processing liquid flows along the surface, and the heating portion is installed on the body edge to heat the processing liquid, The flow rate of the processing liquid is controlled as the rotating plate rotates while the processing liquid introduced into the plate flows along the surface of the rotating plate.
이하, 첨부된 도면을 참조하여 본 고안의 튜브 가열장치를 설명하겠다.Hereinafter, with reference to the accompanying drawings will be described a tube heating apparatus of the present invention.
제1a도는 일반적인 스테이션에서의 처리액의 순환흐름도이고,1a is a circulating flow chart of the processing liquid in a general station,
제1b도는 종래기술에 따른 튜브 가열장치의 단면도이다.1b is a sectional view of a tube heating apparatus according to the prior art.
제2a도는 본 고안의 튜브 가열장치를 갖는 웨스테이션에서의 처리액의 순환흐름도이고,Figure 2a is a flow chart of the processing liquid in the wet station having the tube heating apparatus of the present invention,
제2b도는 본 고안에 따른 튜브 가열장치의 단면도이고,Figure 2b is a cross-sectional view of the tube heating apparatus according to the present invention,
제2c도는 제2b도의 부분확대도이다.FIG. 2C is a partially enlarged view of FIG. 2B.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
10, 110 : 몸체 11, 11-1, 11-2, 111, 111-1, 111-2 : 튜브10, 110: body 11, 11-1, 11-2, 111, 111-1, 111-2: tube
20, 120 : 처리조 13, 113 : 처리액공급구20, 120: treatment tank 13, 113: treatment liquid supply port
15, 115 : 처리액배출구 17 : 흐름조절판15, 115: treatment liquid outlet 17: flow control plate
117 : 회전판 23, 123 : 펌프117: rotating plate 23, 123: pump
25, 125 : 필터 130 : 순수공급관25, 125: filter 130: pure water supply pipe
132 : 돌기 134 : 홈132: projection 134: groove
제2a도는 일반적인 웨스테이션에서의 처리액의 순환흐름도이고, 제2b도는 종래기술에 따른 튜브 가열장치의 단면도이고, 제2c도는 제2b도의 부분확대도이다.FIG. 2A is a circulating flow chart of a processing liquid in a general wet station, FIG. 2B is a sectional view of a tube heating apparatus according to the prior art, and FIG. 2C is a partially enlarged view of FIG. 2B.
본 고안의 튜브 가열장치는, 제2a도 내지 제2c도에 도시된 바와 같이, 상단 및 하단에 각각의 튜브(111-1)(111-2)에 연결설치된 처리액공급구(115) 및 처리액배출구(113)를 갖고, 하부에 홈(134)이 형성되는 몸체(110)와, 몸체(110) 내부에 설치되며, 하부에 형성된 돌기(132)가 홈(134)에 삽입되어 처리액공급구(115)를 통해 처리액이 표면을 따라 흐르면서 회전되는 회전판(117)과, 몸체(110) 가장자리에 설치되어 처리액을 가열시키는 가열부(119)와, 몸체(110) 내의 처리액 온도를 감지하여 적정온도를 유지시키도록 가열부(119)를 제어하는 온도감지센서(121)로 구성된다.Tube heating apparatus of the present invention, as shown in Figures 2a to 2c, the processing liquid supply port 115 and the processing is installed on the upper and lower ends of each tube (111-1) (111-2) Body 110 having a liquid discharge port 113, the groove 134 is formed at the bottom, and the body 110 is installed inside, the projection 132 formed at the bottom is inserted into the groove 134 to supply the treatment liquid The rotating plate 117 is rotated while the processing liquid flows along the surface through the sphere 115, the heating unit 119 is installed at the edge of the body 110 to heat the processing liquid, and the temperature of the processing liquid in the body 110. It consists of a temperature sensor 121 to detect and control the heating unit 119 to maintain the proper temperature.
이와 같이 구성된 본 고안의 튜브 가열장치를 이용하여 웨스테이션 내에서 처리액이 가열 및 순환되는 과정을 살펴보면 다음과 같다.Looking at the process of heating and circulating the treatment liquid in the wet station using the tube heating apparatus of the present invention configured as described above are as follows.
제2a도와 같이, 순수에 의해 희석된 H3PO4등의 세정용액인 처리액을 처리조 (120) 하부를 통해 공급시키며, 이때 처리액을 150℃ 정도의 일정온도를 유지하여 웨이퍼 세정공정을 진행시킨다.As shown in Fig claim 2a, sikimyeo supplying a processing liquid cleaning solution such as H 3 PO 4 is diluted by the pure water through a lower part of the processing tank (120), wherein the processing solution maintained a constant temperature of about 150 ℃ to the wafer cleaning step Proceed.
그리고 공정 진행 중에 증발된 순수 양 만큼 H3PO4용액을 별도의 순수공급관을 통해(도면에 도시되지 않음) 보충하여 준다.The H 3 PO 4 solution is replenished through a separate pure water supply pipe (not shown) by the amount of pure water evaporated during the process.
이어서 세정공정시 웨이퍼로부터 떨어진 반응 부산물 등의 이물질이 혼합된 처리액은 처리조(120)의 하부를 통해 연속해서 공급되는 처리액에 의해 오버플로워링된다. 그리고, 오버플로워링된 이물질이 혼합된 처리액은 튜브(111)를 통해 일방향으로 흐르면서 펌프(123)에 의해 펌핑되고 필터(125)에서 이물질이 필터링된다.Subsequently, the processing liquid mixed with foreign substances such as reaction by-products separated from the wafer during the cleaning process is overflowed by the processing liquid continuously supplied through the lower part of the processing tank 120. In addition, the treatment liquid in which the overflowed foreign matter is mixed is pumped by the pump 123 while flowing in one direction through the tube 111, and the foreign matter is filtered in the filter 125.
그리고, 튜브를 통해 흐르는 처리액의 손실된 열을 보상하기 위하여 처리액은 튜브 가열장치(b)에서 일정온도로 가열된 후 처리조(120) 내로 재순환된다.Then, in order to compensate for the lost heat of the processing liquid flowing through the tube, the processing liquid is heated to a predetermined temperature in the tube heating apparatus (b) and then recycled into the processing tank 120.
이 때, 튜브 가열장치(b)는 웨스테이션 내에서 공간 확보를 위해 수직으로 설치된다.At this time, the tube heater (b) is installed vertically to secure space in the westation.
튜브 가열장치(b)는 처리액이 튜브(111-2)로부터 처리액공급구(115)를 통하여 몸체(110) 내부로 공급시키며, 몸체(110) 내부로 공급된 처리액은 회전판(117) 표면을 따라 흐르면서 처리액배출구(113)를 통해 상단에 연결된 튜브(111-1)내로 배출되도록 한다. 그리고 회전판(117)은 제2b도를 참조하면, 꽈배출형상으로 형성한다.Tube heating apparatus (b) is a processing liquid is supplied into the body 110 through the processing liquid supply port 115 from the tube 111-2, the processing liquid supplied into the body 110 is the rotating plate 117 While flowing along the surface to be discharged into the tube (111-1) connected to the top through the treatment liquid discharge port 113. And referring to Fig. 2b, the rotating plate 117 is formed in the shape of discharge.
이때, 회전판(117)은 석영재질로, 처리액공급구(115)를 통해 유입되는 일정압력을 갖는 처리액과의 마찰력으로 인하여 회전되며, 회전판(117)이 회전됨에 따라 돌기(132)가 홈(134) 내에서 회전된다.At this time, the rotating plate 117 is made of quartz, and is rotated due to the frictional force with the processing liquid having a predetermined pressure flowing through the processing liquid supply port 115, and the protrusion 132 is grooved as the rotating plate 117 is rotated. It is rotated within 134.
이때, 돌기(132)와 홈(134)을 테프론재질로 형성한다.At this time, the protrusion 132 and the groove 134 is formed of a Teflon material.
따라서 회전되는 회전판(117) 표면을 따라 흐르는 처리액이 여러 갈래로 갈라지면서 회전되면서 상방향인 처리액배출구(113)를 통해 보다 원활하게 배출되며, 여기에서 회전판(117)은 처리액의 흐름속도 즉, 유속을 빠르게 하는 역할을 한다.Therefore, the processing liquid flowing along the surface of the rotating plate 117 is divided into several branches and is rotated more smoothly through the processing liquid discharge port 113 upward, where the rotating plate 117 is a flow rate of the processing liquid. That is, it plays a role of speeding up the flow rate.
또한, 홈(134)이 형성된 몸체(110) 하부 표면은 다수개의 홀(135)을 형성하여 처리액의 공급을 수월하게 한다.In addition, the lower surface of the body 110 in which the groove 134 is formed forms a plurality of holes 135 to facilitate the supply of the treatment liquid.
그리고 몸체(110) 외부에는 가열부(119)가 설치되어져서 몸체(110) 내에 흐르는 처리액의 온도를 일정온도로 가열시키는데, 이 가열부(119)는 온도감지센서 (121)에 의해 제어되면서 처리액을 적정온도 범위까지만 상승시킨다.And the heating unit 119 is installed outside the body 110 to heat the temperature of the processing liquid flowing in the body 110 to a predetermined temperature, the heating unit 119 is controlled by the temperature sensor 121 The treatment liquid is raised only to the optimum temperature range.
이어서 처리액배출구(113)를 통해 상단의 튜브(111-1)로 유출된 처리액은 처리조(120) 내로 재순환된다.Subsequently, the processing liquid flowing out to the upper tube 111-1 through the processing liquid discharge port 113 is recycled into the processing tank 120.
그리고 몸체(110) 일측에는 순수공급관(130)을 연결설치하여 필터링된 처리액을 본 고안의 가열장치 내에서 가열할 시, 증발된 순수 양 만큼 보충하여 준다.And one side of the body 110 is connected to the pure water supply pipe 130, when the filtered treatment liquid is heated in the heating apparatus of the present invention, it is replenished by the amount of evaporated pure water.
상기에서 살펴본 바와 같이, 단순히 펌프의 펌핑만으로 처리액을 이송시키기 때문에 펌프에 무리를 주고, 또한 원활한 순환이 어려워 처리조 내로 유입되는 처리액의 온도가 떨어지게 되어 열손실을 발생시키는 종래의 장치와는 달리, 본 고안의 튜브 가열장치에서는 회전판을 이용하여 처리액의 유속을 빠르게 하여 처리조 내로 처리액을 재순환시킴으로써 가열된 처리액의 온도 하강을 막아 적정온도 유지가 가능하다.As described above, it is difficult to smoothly circulate the pump because the treatment liquid is simply transferred by pumping the pump, and the temperature of the treatment liquid flowing into the treatment tank is lowered, which causes heat loss. Alternatively, in the tube heating apparatus of the present invention, it is possible to maintain the proper temperature by preventing the temperature drop of the heated treatment liquid by recycling the treatment liquid into the treatment tank by increasing the flow rate of the treatment liquid by using the rotating plate.
또한, 회전판을 이용하여 처리액의 유속을 빠르게 함으로써 장치에 무리를 주지 않게 되며, 처리액의 필터링되는 횟수를 증가시킬 수 있어 파티클을 최소화할 수 있다.In addition, by using a rotating plate to increase the flow rate of the processing liquid does not impose a burden on the device, it is possible to increase the number of times the processing liquid is filtered to minimize the particles.
그리고 본 고안의 가열장치에 순수공급관을 연결설치함으로써, 처리조 내로 균일한 농도의 처리액을 공급할 수 있다.And by connecting the pure water supply pipe to the heating apparatus of the present invention, it is possible to supply a treatment liquid of uniform concentration into the treatment tank.
Claims (6)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019970007402U KR200159379Y1 (en) | 1997-04-10 | 1997-04-10 | Tube heating apparatus |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019970007402U KR200159379Y1 (en) | 1997-04-10 | 1997-04-10 | Tube heating apparatus |
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| Publication Number | Publication Date |
|---|---|
| KR19980062975U KR19980062975U (en) | 1998-11-16 |
| KR200159379Y1 true KR200159379Y1 (en) | 1999-10-15 |
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| Application Number | Title | Priority Date | Filing Date |
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| KR2019970007402U KR200159379Y1 (en) | 1997-04-10 | 1997-04-10 | Tube heating apparatus |
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| KR (1) | KR200159379Y1 (en) |
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