JPS59145525A - Resist development - Google Patents

Resist development

Info

Publication number
JPS59145525A
JPS59145525A JP2005683A JP2005683A JPS59145525A JP S59145525 A JPS59145525 A JP S59145525A JP 2005683 A JP2005683 A JP 2005683A JP 2005683 A JP2005683 A JP 2005683A JP S59145525 A JPS59145525 A JP S59145525A
Authority
JP
Japan
Prior art keywords
development
sample
chamber
laminar flow
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005683A
Other languages
Japanese (ja)
Other versions
JPH0144011B2 (en
Inventor
Katsunobu Nakagawa
中川 勝信
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electronics Corp
Priority to JP2005683A priority Critical patent/JPS59145525A/en
Publication of JPS59145525A publication Critical patent/JPS59145525A/en
Publication of JPH0144011B2 publication Critical patent/JPH0144011B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means

Abstract

PURPOSE:To realize a continuous processing and perform resist development quickly by a method wherein development liquid, rinsing liquid and the like are let flow down in a thin laminar flow along the surface of a resist layer and the development of the resist layer and pattern formation are performed in the laminar flow. CONSTITUTION:A specimen 12 is transferred from a loading room 1 into a development chamber 2 and gradually covered by a laminar flow 13 and a required pattern is formed from a resist layer 16. The condition of the resist pattern is checked by a sensor 15 which detects the end point and controlled by changing the development time by changing the transfer speed of the belt. The specimen 12 is transferred through a barrier 7-2 into a rinsing chamber 3 and rinsed. After rinsing, the specimen 12 is exposed to a gas supplied from a nozzle 7-3 in a drying chamber 4. Then the specimen 12 is transferred through a baking chamber 5 into an unloading chamber 6 and packed in a cassette there.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は半導側・製造の写真食刻工程等に用いるレジス
ト現像方法に関する。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a resist developing method used in photolithographic processes in semiconductor manufacturing.

従来例のI’fl′f成とその問題点 う1〈心体装置ill゛製造におけるマスク製作、半導
体プロセスの写真食刻工程においては、シリコン、カラ
ス枯板及O−是板上の各抑制ね膜等を選択エノチンクす
る場合、基板上にマスクとなるレジスト層を形成するこ
とが行われている。
Conventional I'fl'f formation and its problems 1. In mask production in the manufacture of core device illumination and photolithographic process of semiconductor process, each suppression on silicon, glass dead board and O-black board When selectively etching a membrane or the like, a resist layer serving as a mask is formed on the substrate.

このレジメ1一層は、塗布、露光、現像等の工程を経て
パターンに形成される。中でも、近年半導体製造工程に
おいてポジ型し−ジヌトの使用が普及するにつれて、現
(象工程の良否はレシヌ1〜パターンの死命を制する程
になっている。
This single layer of regimen 1 is formed into a pattern through processes such as coating, exposure, and development. In particular, as the use of positive-type semiconductors has become widespread in the semiconductor manufacturing process in recent years, the quality of the current process has come to determine the fate of the patterns.

従来、現像を行う方法としては、レジス1−露光後のシ
リコン基板、マスクプレート等(以後単一試料と称す)
を現像液が満たされた桑液槽に浸漬する方法(以後ティ
ップ法を称す)、試桐をスピンナー上にのせて回転させ
ながら1.現像液をノスルから霧状に+12−1出させ
て行う方法(以グツ、プレー法と称す)とかある。
Conventionally, the developing method is as follows: resist 1 - silicon substrate after exposure, mask plate, etc. (hereinafter referred to as a single sample)
A method of immersing a sample in a mulberry liquor tank filled with a developer (hereinafter referred to as the tip method).1. There is a method (hereinafter referred to as the spray method) in which a developer is discharged in the form of a mist from a nozzle.

一般に、ティップ法では一度に多部のHA Jニー1ヲ
現像できる、現像i夜の描1度を一定に保持できる等の
利点があるか、現像後の其米I表面に汚れがつき易い、
現像の終点を?Ir!I御しにくい皆・の欠点かある。
In general, the tip method has advantages such as being able to develop many parts of the HAJ at one time and maintaining a constant density during development.
What is the end point of development? Ir! I think everyone's fault is that they are difficult to control.

スプレー法では、試料に汚れがつき(にくいという利点
があるか、一度に多回の試料を処理できない現像の終点
を制御しにくい等の欠点かある。更に電子ビームレジヌ
ト等において現像に長時間を要する場合、現像液を霧状
に噴出させるので、現像部11度が急激に低下し、現1
象が進行しなくなる、現像後のベーキング時間が長いた
め長大なべ)V l一式オープンを必・要とする等の問
題点がある。
The spray method has the advantage of being less likely to stain the sample, but it also has disadvantages, such as not being able to process multiple samples at once and making it difficult to control the end point of development.Furthermore, it takes a long time to develop using electron beam resins, etc. In this case, since the developer is ejected in a mist, the temperature of the developing area 11 degrees decreases rapidly.
There are problems such as the problem that the image does not progress and the baking time after development is long, so it is necessary to open the whole set (V1).

発明の目的 本発明はこれらの欠点を除去し、良好なレジストパター
ンを得ることがで、きるレジメl−現像方法を提供せん
とするものである。
OBJECTS OF THE INVENTION It is an object of the present invention to provide a method for developing a regimen which eliminates these drawbacks and allows a good resist pattern to be obtained.

発明のff/7成 本発明はレジスト層表面に沿ってN♂い層流となって流
下する現像液およびリンス液等の液体中でレジスト層ヲ
現像、パターン形成するレシスl−現嫁方法である。本
発明によれば、連続処理が可能であり、比較的簡単な装
置により、レシス[−現像を迅速に行々うことが可能で
ある。
FF/7 of the invention The present invention is a resist l-development method for developing and forming a pattern on a resist layer in a liquid such as a developer and a rinsing liquid that flows down in a laminar flow along the surface of the resist layer. . According to the present invention, continuous processing is possible, and development can be carried out quickly using a relatively simple device.

実施例の説明 本発明によるレジヌト現像方法では、連続的。Description of examples The resin development method according to the present invention is continuous.

又は所定間隔で断続的に試料を現像部に送り込む。Alternatively, the sample is sent to the developing section intermittently at predetermined intervals.

この現象部で、単数又は複数の孔をもつノズルより霧状
又はシャワー状に噴出した現像液を直接試料のレジスト
面に接触させることかしに試料面以外の場所で薄い層流
に変えた現像液中にさらす。
In this phenomenon area, the developer is sprayed in the form of a mist or shower from a nozzle with one or more holes, and the developer is brought into direct contact with the resist surface of the sample, and then turned into a thin laminar flow at a location other than the sample surface. Expose to liquid.

リンスも同じく層流に変えたリンス液中にさらす。For rinsing, expose the rinsing liquid to the same laminar flow.

リンス後ヒ乾燥用の気流中にさらして乾燥する。After rinsing, expose to a drying air stream to dry.

更に試料前面又は裏面より所定温度で加熱するという一
連の工程より々る。このような現象方法に試断lを常時
清浄な層流の中で現像するので、ティップ法において発
生するような試料の汚れが出ない、現像液温を一定に保
持できるので、現像条件の再現性がよい。現像液の層流
を透して現像の終点の検出ができる、スプレー法のよう
な一枚ずつヌピンナーから取りはずす作業が不要なので
、連続処理が可能であり、装置の機1;、l、;も[6
j素になる等の利点をもつ。
Furthermore, it involves a series of steps of heating the sample at a predetermined temperature from the front or back side. In this method, the sample is developed in a clean laminar flow at all times, so the sample does not become contaminated as in the tip method, and the developer temperature can be kept constant, making it possible to reproduce the development conditions. Good sex. The end point of development can be detected through the laminar flow of the developer, and there is no need to remove each sheet from the Nupinner as in the spray method, so continuous processing is possible. [6
It has the advantage of being a j-element.

次に、本発明によるレジスト現像方法を実施する為の装
置について図面を参照しながら詳細に髄1明する。
Next, an apparatus for implementing the resist developing method according to the present invention will be explained in detail with reference to the drawings.

第1図(2L)は本発明によるレシヌト現像方法を実施
する為の装置の正面図であり、第1図(b’)はそのA
−A/断面を示したものである。
Figure 1 (2L) is a front view of the apparatus for carrying out the resin development method according to the present invention, and Figure 1 (b') is the A
-A/A cross section is shown.

第11図において、1は試料ロープインク室、2il−
IX現像室、3はリンス室、4は乾燥室、5はベーキン
ク?:イ、6は試ねIアンローデオング室である。
In FIG. 11, 1 is a sample rope ink chamber, 2il-
IX developing room, 3 is rinsing room, 4 is drying room, 5 is baking room? :I, 6 is the unloading room.

各室は隔t、H,Yニア −1〜7−4でわけられてお
り、そして各隔壁7−1〜7−4には試着1が移動する
ために必要な最低限の大きさの窓様の明り込み8−1〜
8−5が設けられている。現像室2、リンス室3には各
々ノズルa−1,a”−2が設けられており、乾燥室4
にはガス吹き出し用ノズ)V9−3が設けられている。
Each room is divided into partitions t, H, and Y near -1 to 7-4, and each partition wall 7-1 to 7-4 has a minimum size window necessary for moving the fittings 1. Sunlight 8-1~
8-5 is provided. The developing chamber 2 and the rinsing chamber 3 are provided with nozzles a-1 and a"-2, respectively, and the drying chamber 4 is provided with nozzles a-1 and a''-2, respectively.
is equipped with a gas blowing nozzle (V9-3).

1oは試料搬送用のベルトである。勺しト10には試料
保持枠部11が設けられており、試料の形状、大きさ、
Rさにあゎぜて前記枠部11の形状は凹状又は凸状に形
成される。
1o is a belt for transporting the sample. A sample holding frame 11 is provided on the picket 10, and the sample holding frame 11 can hold the shape, size,
Depending on the radius, the frame portion 11 is formed into a concave or convex shape.

全体として試才゛1はローディング室1がら乾燥室4へ
向って試λ31搬送用ベル1−10の移動と共に、連続
的又は断続的に移動していく。又12は試米」であり、
13は現像液の層流であり、試料、保持部11又は試1
112の表面を流下する。14はノズ/L’9−1から
出た現像液が層流13に変換するための層流発生部であ
る。15は現像の終点を検出するだめのセンサーである
。16はt弐粘112に塗布されたレシヌ1一層である
。17は現像液、リンス液回収用の槌部であら濾過機(
図示せず)へつながっている。
As a whole, the sample 1 moves continuously or intermittently from the loading chamber 1 toward the drying chamber 4 along with the movement of the sample λ31 conveying bell 1-10. Also, 12 is the trial rice.
13 is a laminar flow of the developer, and the sample, the holding part 11 or the sample 1
It flows down the surface of 112. Reference numeral 14 denotes a laminar flow generating section for converting the developer coming out from the nozzle/L'9-1 into a laminar flow 13. 15 is a sensor for detecting the end point of development. 16 is a single layer of resin 1 applied to the t2 adhesive 112. 17 is a hammer part for collecting developer and rinsing liquid; it is a filter (
(not shown).

第1図(C)は第1図(b)における試料、保持枠部1
1の構造を説明するものであり、18は駆動用のチェー
ン、19は駆動用の歯車、20はモータである。試料保
持枠部11が設けられたヘル1−10は駆動用チェーン
18と密着している。駆動用歯車19を介してモータ2
0の回転がべ/l/ l−10に伝えられると、試才」
保持枠部11は連続的又は所定の間隔で断続的に移動し
、その移!vJ速度は現像の終点を検出するセンサー1
5からの移動停止信号によって決定される。
FIG. 1(C) shows the sample in FIG. 1(b), holding frame part 1.
1, in which 18 is a driving chain, 19 is a driving gear, and 20 is a motor. The health 1-10 provided with the sample holding frame 11 is in close contact with the drive chain 18. Motor 2 via drive gear 19
When the rotation of 0 is conveyed to Be/l/l-10, it is a test.”
The holding frame 11 moves continuously or intermittently at predetermined intervals, and the movement! vJ speed is sensor 1 that detects the end point of development.
It is determined by the movement stop signal from 5.

次に本装置の動作を説明する。ローディング室1より現
像室2へ搬入された試料12は、搬入されるにしたがっ
て、層流13′Lよっておおわれ、レジスト層16は所
要パターンが形成される。レジストパターンの状態に終
点検出するセンサ−15によって検査され、ベルト移動
速度の変化による現像時間の変更でもって制御される。
Next, the operation of this device will be explained. The sample 12 carried into the developing chamber 2 from the loading chamber 1 is covered with a laminar flow 13'L as it is carried in, and a desired pattern is formed on the resist layer 16. The state of the resist pattern is inspected by a sensor 15 that detects the end point, and is controlled by changing the developing time depending on the change in belt movement speed.

隔壁7−2を超過した1滅料12はリンス室3へ入り、
リンスがなされる。リンス終了後の試料は乾燥室4にて
ノズル7−3から出たカスにさらされる。
The waste material 12 that has exceeded the partition wall 7-2 enters the rinsing chamber 3,
Rinsing is done. After rinsing, the sample is exposed to the residue coming out of the nozzle 7-3 in the drying chamber 4.

四にベーキング室5をとおり、アシロープインク室6に
てカセy+−に収納される。
4, it passes through the baking chamber 5 and is stored in the receptacle Y+- in the Asilope ink chamber 6.

以」二のようなji、ji成をとると現像液溜、が一定
にできるので、現象条件の再現性がよくなる。
If the following ji and ji configurations are adopted, the developer reservoir can be kept constant, and the reproducibility of the phenomenon conditions will be improved.

第2図(a)fは電子ビームレジストを用いた場合にお
ける適−11」4光■1)−と現1象湿度の関係を示し
た図であり現像の一1限温度を下せわるとレジスI一層
16が現像除去されている試料面に粒状の残存物が発生
する。そして高すきると膜ベリが、舅る。第2図(b)
はスプレー法で現像をおこ々った場合Aの試料の7品度
分布と、本発明による現像をおこなった場合Bの試料の
7品度分布をIU11定した例であり、スプレー法によ
る現像で(は温11分布の幅が広いが本発明による方法
では狭いことがわかる。尚、スプレー法による現像の場
合、レジヌl−1i16がリンク状に現象されたり、粒
状の残存物が発生したりする。第1表はディップ法とス
プレー法と本発明による方法rよる現像前間をそれ、そ
れ比較した一例であり、本発明による方法でdニスプレ
ー法にくらべて、現像fVJ’ l’iJが短縮される
ことがわかる。そして一定の枚数を処理するのに必要な
時間が短いこともわかる。更にディップ法に比べて欠陥
の数が少いこともわかる。
Figures 2(a) and 2(f) show the relationship between the optimum temperature and the humidity when using an electron beam resist. A granular residue is generated on the sample surface where the resist I layer 16 has been removed by development. And when it gets too high, the membrane will die. Figure 2(b)
This is an example in which the 7-grade distribution of sample A when developed by the spray method and the 7-grade distribution of sample B when developed according to the present invention are determined to be IU11. (It can be seen that the width of the temperature 11 distribution is wide, but it is narrow in the method according to the present invention.In addition, in the case of development by the spray method, resin l-1i16 may appear in a link shape or granular residues may occur.) Table 1 is an example of a comparison between the dip method, the spray method, and the method r according to the present invention. It can also be seen that the time required to process a certain number of sheets is short.It can also be seen that the number of defects is smaller compared to the dip method.

第1表  現1象法の比1tx 尚、以上のように本発明における実施例ては、現砥液、
リンヌ(夜はそれぞれノズルから噴出させるようになっ
ているが、層流発生部に密接して)1女が湧出する(苗
造にしてもよい。乾燥はスピンナーによって行ってもよ
い。ベーキングは抵抗加熱式ホ7+−プレー1一式の他
、赤外線ヒーターを用いてもよい。現像用ノズルはスプ
レー現像と併用又は切りかえができるように試料表面に
沿って移動しうるIf/f造になっていてよいことはい
う寸でもない。
Expression 1 Ratio 1tx of 1st representation As mentioned above, in the embodiments of the present invention, the current abrasive liquid,
Linnu (at night, each nozzle is designed to spray, but close to the laminar flow generation part) 1 girl gushes out (can be used for seedling production. Drying can be done with a spinner. Baking is done with resistance) In addition to the heating type H7+-Pray 1 set, an infrared heater may be used.The developing nozzle may be of an If/f structure that can move along the sample surface so that it can be used in combination with spray development or can be switched. That's not even a big deal.

発明の効果 以」二説明したごとく、本発明によれば、現像条件の(
1」現性がよい、試料の処理]11が増加する。試料の
汚れが減少する。現像の終点検出、現象の自動化が容易
である等多大の利点がある。
Effects of the Invention As explained above, according to the present invention, the development conditions (
1" Processing of samples with good reproducibility] 11 increases. Sample contamination is reduced. It has many advantages such as easy detection of the end point of development and automation of the phenomenon.

第1図W) 、 (t)) 、 (C)は本発明実施例
現像装ドなの正面図、断面図、要部機(イー(説明図、
第2図(2L)、(b)は本発明の効果を示す特性図で
ある。
Figures 1W), (t)), and (C) show a front view, a sectional view, and a main part of a developing device according to an embodiment of the present invention.
FIGS. 2(2L) and 2(b) are characteristic diagrams showing the effects of the present invention.

1・・ 試料ローティング室、2・・・・・現像室、3
・・・・リンス室、4・・・・・乾燥室、5・・・ベー
キング室、6・・・・・・試料アンロープインク室、7
−1〜7−4・・・隔9,9−1〜9−3・・・・・ノ
ズル、11・・・・・試料保持枠部、12・・・・試料
、13・・・・層流、14・・・・・・層流発生部。
1... Sample loading chamber, 2... Development chamber, 3
... Rinse chamber, 4 ... Drying room, 5 ... Baking room, 6 ... Sample unloading ink room, 7
-1 to 7-4... Interval 9, 9-1 to 9-3... Nozzle, 11... Sample holding frame, 12... Sample, 13... Layer Flow, 14...Laminar flow generation part.

第1図 おける適−11」4光fji−と現1象湿度の関係を示
した図であり現像の一1沢流度を下まわるとレジヌl−
i716が現像除去されている試料面に粒状の残存物が
発生する。そして高すきると膜ベリが、舅る。第2図(
b)はスプレー法で現像をおこ々った場合Aの試料の7
品度分布と、本発明による現像をおこなった場合Bの試
料の7品度分布をIU11定した例であり、スプレー法
による現像で(は温11分布の幅が広いが本発明による
方法では狭いことがわかる。尚、スプレー法による現像
の場合、レジヌl−1i16がリンク状に現象されたり
、粒状の残存物が発生したりす尚、以上のように本発明
における実施例では、現1象液、リンヌイ夜ばそれぞれ
ノズルから噴出させるようになっているが、層流発生部
に密接して)1女が湧出する(苗造にしてもよい。乾燥
はスピンナーによって行ってもよい。ベーキングは抵抗
加熱式ホ、I−プレー1一式の他、赤外線ヒーターを用
いてもよい。現像用ノズルはスプレー現像と併用又は切
りかえができるように試料表面に沿って移動しうるIf
/f造になっていてよいととはいう寸でもない。
This is a diagram showing the relationship between the 4-light fji- and the humidity in Figure 1.
A granular residue is generated on the sample surface where i716 has been removed by development. And when it gets too high, the membrane will die. Figure 2 (
b) shows sample 7 of sample A when development is done by spray method.
This is an example of the IU11 quality distribution of sample B when developed according to the present invention. In addition, in the case of development by the spray method, resin l-1i16 may be formed into links or granular residues may be generated. , Rinnui is designed to be ejected from each nozzle at night, but in close proximity to the laminar flow generation part) 1 girl gushes out (it can also be used for seedling production. Drying can be done with a spinner. In addition to the heating type E and I-Pray 1 set, an infrared heater may also be used.
It is not enough to say that it is okay to have a /f construction.

発明の効果 以」二説明したごとく、本発明によれば、現像条件の(
I」現性がよい、試料の処理J11が増加する。試料の
汚れが減少する。現像の終点検出、現象の自動化が容易
である等多大の利点がある。
Effects of the Invention As explained above, according to the present invention, the development conditions (
I” Sample processing J11 with good reproducibility increases. Sample contamination is reduced. It has many advantages such as easy detection of the end point of development and automation of the phenomenon.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図(al) 、 (t)) 、 (c)は本発明実
施例現像装ドなの正面図、断面図、要部機(イー(説明
図、第2図<L)、 (b)は本発明の効果を示す特性
図である。 1・・ 試料ローティング室、2・・・・・現像室、3
・・・・リンス室、4・・・・・乾燥室、5・・・ベー
キング室、6・パ・・・試料アンロープインク室、7−
1〜7−4・・・隔9,9−1〜9−3・・・・・ノズ
ル、11・・・・・試料保持枠部、12・・・・試料、
13・・・・層流、14・・・・・・層流発生部。
Figures 1 (al), (t)) and (c) are a front view, sectional view, and main parts of a developing device according to an embodiment of the present invention (illustrative diagram, Figure 2 <L); (b) is It is a characteristic diagram showing the effect of the present invention. 1... Sample loading chamber, 2... Development chamber, 3
...Rinse chamber, 4...Drying room, 5...Baking room, 6...Sample unloading ink room, 7-
1 to 7-4... Interval 9, 9-1 to 9-3... Nozzle, 11... Sample holding frame, 12... Sample,
13... Laminar flow, 14... Laminar flow generation part.

Claims (2)

【特許請求の範囲】[Claims] (1)試料表面に沿って流下する現像処理用液体の層流
中でンジヌトパターンを前記試料表面に形成せしめるこ
とを特徴とするレジスト現像方法。
(1) A resist developing method characterized by forming a continuous pattern on the sample surface in a laminar flow of a developing liquid flowing down along the sample surface.
(2)流下する現像処理用液体の層流の幅がその層流の
埋みより人とする特許請求の範囲第1項に記載のレジス
ト現像方法。
(2) The resist developing method according to claim 1, wherein the width of the laminar flow of the developing liquid flowing down is greater than the depth of the laminar flow.
JP2005683A 1983-02-09 1983-02-09 Resist development Granted JPS59145525A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005683A JPS59145525A (en) 1983-02-09 1983-02-09 Resist development

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005683A JPS59145525A (en) 1983-02-09 1983-02-09 Resist development

Publications (2)

Publication Number Publication Date
JPS59145525A true JPS59145525A (en) 1984-08-21
JPH0144011B2 JPH0144011B2 (en) 1989-09-25

Family

ID=12016413

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005683A Granted JPS59145525A (en) 1983-02-09 1983-02-09 Resist development

Country Status (1)

Country Link
JP (1) JPS59145525A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62195118A (en) * 1986-02-21 1987-08-27 Hitachi Ltd Photoresist developing device
CN104714376B (en) * 2015-04-02 2018-09-18 合肥鑫晟光电科技有限公司 A kind of developing apparatus and developing method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104849968B (en) * 2015-05-28 2019-12-31 合肥京东方光电科技有限公司 Developing machine and developing method

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS513173A (en) * 1974-06-25 1976-01-12 Matsushita Electric Ind Co Ltd HAKUMAKU PATAANSEIZOSOCHI
JPS5575223A (en) * 1978-12-04 1980-06-06 Fujitsu Ltd Manufacturing semiconductor device
JPS565312U (en) * 1979-06-25 1981-01-17
JPS5727168A (en) * 1980-07-28 1982-02-13 Hitachi Ltd Equipment for wet treatment
JPS57117237A (en) * 1981-01-13 1982-07-21 Toshiba Corp Manufacturing device for semiconductor device
JPS57192955A (en) * 1981-05-25 1982-11-27 Toppan Printing Co Ltd Developing method

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS513173A (en) * 1974-06-25 1976-01-12 Matsushita Electric Ind Co Ltd HAKUMAKU PATAANSEIZOSOCHI
JPS5575223A (en) * 1978-12-04 1980-06-06 Fujitsu Ltd Manufacturing semiconductor device
JPS565312U (en) * 1979-06-25 1981-01-17
JPS5727168A (en) * 1980-07-28 1982-02-13 Hitachi Ltd Equipment for wet treatment
JPS57117237A (en) * 1981-01-13 1982-07-21 Toshiba Corp Manufacturing device for semiconductor device
JPS57192955A (en) * 1981-05-25 1982-11-27 Toppan Printing Co Ltd Developing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62195118A (en) * 1986-02-21 1987-08-27 Hitachi Ltd Photoresist developing device
CN104714376B (en) * 2015-04-02 2018-09-18 合肥鑫晟光电科技有限公司 A kind of developing apparatus and developing method

Also Published As

Publication number Publication date
JPH0144011B2 (en) 1989-09-25

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