JPH09133613A - Method and apparatus for manufacture of contamination evaluation substrate as well as contamination evaluation method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To manufacture an evaluation sample in which particles as contamination evaluation objects are stuck uniformly to a substrate for contamination evaluation and in which the adhesion distribution of the particles is identical and to evaluate a contamination with high accuracy. SOLUTION: A spin chuck 2 which turns and holds a wafer W for contamination evaluation is arranged and installed inside a treatment chamber 1 in which a prescribed temperature atmosphere is formed. A particle supply means 4 which supplies particles 3 as dried contamination objects is installed at the upper part of the treatment chamber 1. In this way, the dried particles 3 which are generated by the particle supply means 4 are supplied onto the wafer W being turned, and the particles 3 can be stuck (coated) uniformly to the surface of the wafer W.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a substrate for contamination evaluation, an apparatus therefor, and a contamination evaluation method.

[0002]

2. Description of the Related Art In the manufacture of semiconductor devices, the degree of integration is 16
M, 64M, 256M, 1G, etc. are in the stage of development of VLSI, and due to such miniaturization of integrated circuits and improvement of integration degree, particles of a size that has not been a problem until now become a problem. The probability of defects is increasing. Therefore, the generation of particles is suppressed and the removal of particles is an important issue in the manufacturing process.

As a device for removing particles, there are a cleaning device for immersing and cleaning the object to be cleaned and a scrubbing device for scrubbing the cleaning surface of the object to be cleaned with a brush. In order to evaluate the cleaning ability of these devices, a dummy object to be cleaned is used. Conventionally, in a cleaning process for removing particles, particles for evaluation corresponding to particles, for example, latex particles such as polystyrene are attached (coated) to the surface of a dummy semiconductor wafer as a substrate for a contamination evaluation sample. A contamination evaluation method is used in which a contamination evaluation substrate is prepared and the removal rate of particles adhering to the sample is measured.

A conventional method for producing a substrate for contamination evaluation sample is as follows:
The procedure is shown in FIG. That is, first, for example, one drop of latex particles is diluted with 500 ml (purity) of pure water to prepare latex particles,
About 5 ml is applied onto a rotating semiconductor wafer with a syringe and dried. The coated semiconductor wafer is measured, and a predetermined number of particles after coating, for example, 2000 to 350.
Whether or not it is within the range of 0 is measured. If the number of particles is not a predetermined number by measurement, the latex diluted solution is prepared by diluting again with pure water. When the number of particles is a predetermined number, latex particles are continuously coated on a plurality of semiconductor wafers, for example, 10 semiconductor wafers by the same method as described above, dried, and then measured again to obtain a predetermined number of particles after coating. The 3000 to 5000 semiconductor wafers are used as a contamination evaluation sample (evaluation sample). When the number of particles is not a predetermined number as measured by the continuous coating, the latex particles are coated again after megasonic cleaning.

[0005]

However, in the conventional method of manufacturing a contamination evaluation substrate of this kind, it is difficult to uniformly coat latex particles, that is, particles on the surface of a semiconductor wafer. It is the situation that one sheet can be used as an evaluation sample. Further, when latex particles are coated on a semiconductor wafer and then dried, impurities such as contamination contained in the latex move as crystals to move the attachment position during application, resulting in non-uniform particle attachment distribution. . Moreover, since the evaluation sample is manufactured by hand, it is difficult to manufacture a plurality of evaluation samples of the same quality. Furthermore, since the produced evaluation sample is non-uniform, there is a problem in that highly accurate contamination evaluation corresponding to actual contamination cannot be performed.

[0006] Therefore, it is important to uniformly attach particles for contamination evaluation to a substrate for contamination evaluation, to prepare a plurality of evaluation samples having the same particle distribution, and to achieve a highly accurate contamination evaluation method. Has become.

The present invention has been made in view of the above circumstances, and it is possible to produce a sample for evaluation which has a uniform adhesion of particles for contamination evaluation to a substrate for contamination evaluation and an evaluation sample having the same particle distribution. The present invention provides a method for manufacturing a substrate, an apparatus therefor, and a contamination evaluation method that enables highly accurate contamination evaluation.

[0008]

A method for producing a contamination evaluation substrate according to claim 1, wherein a contamination evaluation substrate is produced by adhering particles to be evaluated on the surface of a substrate for a contamination evaluation sample. Based on the manufacturing method, the dried particles are supplied to the surface of the substrate while rotating the substrate under a predetermined temperature atmosphere.

The method for producing a contamination evaluation substrate according to claim 2 is premised on a method for producing a contamination evaluation substrate in which particles for evaluation are attached to the surface of a substrate for a contamination evaluation sample to produce a contamination evaluation substrate. Using a heat-fusible polymer for the particles,
It is characterized in that the dried particles are supplied to the surface of the substrate while the substrate is rotated, and the particles are heated to melt and adhere to the substrate.

In the method for producing a contamination evaluation substrate of the present invention, the particles supplied to the surface of the substrate may be those which have been dried in advance, or particles and a predetermined liquid may be mixed. The suspension may be separated into gas and liquid and dried to be supplied onto the substrate (claim 3).
Further, it is preferable to supply the particles onto the substrate after subjecting the particles to an antistatic treatment (claim 4). In addition, when the dried particles are supplied to the surface of the substrate, the air flow around the substrate may be adjusted to adjust the particle adhesion distribution.

According to a fifth aspect of the present invention, there is provided a contamination evaluation substrate producing apparatus, which is premised on a contamination evaluation substrate producing apparatus in which particles to be evaluated are attached to the surface of a substrate for a contamination evaluation sample to produce a contamination evaluation substrate. A processing chamber for forming a predetermined temperature atmosphere,
A rotation holding unit that is disposed in the processing chamber and rotatably holds the substrate, and a particle supply unit that dries the particles and supplies the particles at a predetermined particle size and flow rate onto the substrate.
It is characterized by having.

According to a sixth aspect of the present invention, there is provided a contamination-evaluation substrate producing apparatus, which is premised on a contamination-evaluation substrate producing apparatus in which particles to be evaluated are attached to the surface of a substrate for a contamination-evaluation sample to produce a contamination-evaluation substrate. A processing chamber for forming a predetermined temperature atmosphere,
A rotation holding unit that is disposed in the processing chamber and rotatably holds the substrate, and a particle supply unit that dries the particles and supplies the particles at a predetermined particle size and flow rate onto the substrate.
And an antistatic means for preventing electrification of particles supplied from the particle supply means.

The contamination evaluation method according to claim 7 is the method according to claim 1.
A substrate manufactured by any one of the manufacturing methods described in 4 to 4 is prepared, and a resistor is brought into contact with the surface of the substrate at a predetermined pressure, and the substrate and the resistor are moved relatively to each other. It is characterized in that the residual ratio of the particles to be evaluated that adhere to the upper part is detected.

According to the first and fifth aspects of the invention, the substrate for contamination evaluation is rotated in an atmosphere of a predetermined temperature, and the dried particles for contamination are supplied to the surface of the substrate. The particles can be evenly deposited on the substrate.

According to the second aspect of the present invention, the heat-meltable polymer is used for the particles, and while the substrate is rotated, the dried particles are supplied to the surface of the substrate, and the particles are melted by heating to melt the substrate. By making the particles adhere to the top, the adhesion force and the adhesion area of the particles to the substrate can be increased, and more uniform adhesion can be achieved. Further, by changing the heating temperature, it is possible to manufacture the contamination evaluation substrates of different types having different adhesive forces or different particle sizes.

In this case, the particle size of the particles can be adjusted by separating the suspension of the particles and the predetermined liquid by gas-liquid separation, drying and supplying the suspension onto the substrate.
In addition, after the particles are subjected to the antistatic treatment, the particles are supplied onto the substrate, whereby it is possible to prevent particles from adhering to each other due to static electricity, and it is possible to make the particles evenly adhered ( Claims 4 and 6).

According to the invention of claim 7, the resistor is brought into contact with the surface of the substrate manufactured by the method of any one of claims 1 to 4 at a predetermined pressure, and the substrate and the resistor are separated from each other. By relatively moving and detecting the residual ratio of the particles to be evaluated adhered to the substrate, the residual ratio of the contaminants such as particles adhered to the substrate can be detected.

[0018]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below in detail with reference to the drawings.

FIG. 1 is a schematic sectional view showing an example of an apparatus for producing a contamination evaluation substrate of the present invention. As an example of this substrate, an evaluation substrate of a scrubber device will be described. Of course, it may be used for cleaning evaluation. This contamination evaluation substrate manufacturing apparatus is provided with a processing chamber 1 and a spin serving as a rotation holding unit which is disposed in the processing chamber 1 and rotatably holds a contamination evaluation substrate, for example, a dummy semiconductor wafer W (hereinafter referred to as a wafer). The chuck 2 and the particle supply means 4 for supplying the particles 3 for the contamination target onto the wafer W constitute a main part.

The processing chamber 1 is an airtight container 10 which is isolated from the outside air to form an atmosphere of a predetermined temperature, and is formed of a material such as PVC. An opening 11 for loading and unloading the wafer W is provided on a part of the side wall of the container 10,
The wafer W can be transferred to and from the spin chuck 2 by a transfer arm 13 that moves into the processing chamber 1 through the opening 11 that is opened and closed by the gate 12.

An exhaust port 14 is provided at the bottom of the processing chamber 1, and an exhaust device 15 is connected to the exhaust port 14 to form an air flow forming means. Therefore, the particles 3 attached (coated) to the wafer W by driving the exhaust device 15 of the air flow forming means to adjust the exhaust amount of the air in the processing chamber 1 within the exhaust pressure range of 0 to 50 mmH ₂ O. The distribution mode of can be adjusted. In order to make it easier to adjust the air flow in the processing chamber 1, as shown by the chain double-dashed line in FIG. 1, a fan 18 is provided to an air supply port 16 provided in the upper part of the processing chamber 1 via an air filter 17. May be connected, and two exhaust ports 14 may be provided facing the upper part of the processing chamber 1.

The spin chuck 2 is formed of a material such as Delrin (trade name), and is connected to a vacuum pump (not shown) such as a dry pump to hold the wafer W by vacuum suction. Further, the spin chuck 2 is rotated in a horizontal plane by a motor 20 such as a step motor provided on the bottom surface outside the processing chamber 1, and the wafer W can be moved up and down by an up-and-down means (not shown) such as up-and-down movement of three pins. Is configured.
In this case, a heat plate 30 through which the rotary shaft 22 of the spin chuck 2 is inserted is integrally provided on the back surface of the mounting table 21 of the spin chuck 2, and the temperature of the heat plate 30 is favorably maintained on the mounting table 21. It is configured to transfer heat. This hot plate 30
The wafer W held on the spin chuck 2 is heated by the heater 31 as a heating means incorporated therein, and the current of the heater 31 is controlled so that the inside of the processing chamber 1 is set to a predetermined temperature atmosphere. It is like this. A temperature sensor (not shown) is built in the mounting table 21 to automatically perform this control.

The particle supply means 4 is connected to a particle supply passage 19 provided on one side wall of the upper part of the processing chamber 1 and is formed by an aerosol generator. This particle supply means 4
As shown in FIG. 2, a supply unit 40 of latex particles {a suspension of polymer particles made of a heat-meltable synthetic resin such as polystyrene and a predetermined liquid such as IPA (isopropyl alcohol) or pure water}} A gas supply source 41 such as a gas for pressure-feeding particles, for example, air or nitrogen (N ₂ ) gas, and a particle generating section 42 for performing gas-liquid separation and drying of latex particles constitute a main part.

In this case, the particle generating section 42 is connected to the gas supply source 41 via the main filter 46 and the pump 43 to the main pipe line 44 in order from the gas supply source 41 side to the drying cylinder 45 and the first. Filter 46a, first flow meter 47
a, the second filter 46b and the drying pipe 48 are interposed, and the particle supply unit 40 is connected between the second filter 46b and the drying pipe 48. In addition, the first of the main pipeline 44
A branch pipe line 49 that branches from between the filter 46a and the first flow meter 47a is connected to the drying pipe 48.

In the particle supply means 4 thus constructed, the gas supplied from the gas supply source to the main pipe line 44, such as air or N ₂ gas, is pre-dried by the drying cylinder 45 and supplied from the supply section 40. Particle size of 0.1
When mixed with the latex particles having a particle size of ˜1.0 μm, droplets in which one particle is contained in one droplet are formed, and these droplets are pressure-fed to the drying tube 48. The latex particles pressure-fed to the drying tube 48 are gas-liquid separated by the dry air supplied from the branch pipe 49, that is, the liquid surrounding the particles 3 is volatilized and only the dried particles 3 are processed.
Supplied within.

Further, an antistatic means such as an ion irradiator 50 is provided on the particle ejection port side of the particle supply means 4 configured as described above. Therefore, by irradiating the particles 3 supplied to the processing chamber 1 from the particle supply means 4 with ions generated by the ion irradiator 50, for example, ions having a polarity opposite to the positive and negative polarities with which the particles 3 are to be charged. Therefore, the static electricity charged on the particles 3 can be removed, and the particles 3 can be prevented from adhering to each other.

Next, the procedure of the method of manufacturing the contamination evaluation substrate of the present invention will be described with reference to the flow chart shown in FIG. First, a predetermined particle size, for example, 0.1 to 1.0 μm
The polymer particles and IPA are mixed to prepare latex particles (step). The mixing ratio at this time is 20 ml of IPA for 1 drop of latex particles. The latex particles thus prepared are supplied to the particle supplying means 4
To generate the particles 3 dried as described above, and the particles 3 are supplied into the processing chamber 1 (step). At this time, the static electricity that charges the particles 3 is removed by the ion irradiation from the ion irradiation device 50.

On the other hand, the wafer W held by the spin chuck 2 in the processing chamber 1 has a predetermined rotation speed, for example, 0 to 1.
The particles 3 are evenly adhered (applied) to the surface of the wafer W by being horizontally rotated at 000 rpm for a predetermined time, for example, 1 to 5 minutes (step). At this time, at room temperature where the heater 31 is not driven, the particles 3 adhere to the wafer W in a spherical state as shown in FIG. 3A, and the heater 31 is driven to heat to a temperature of, for example, 50 to 200 ° C. Then, Fig. 3
As shown in (b), the particles 3 are melted and the adhesive force to the wafer W can be increased. Therefore, it is possible to obtain an evaluation sample corresponding to the contamination of the semiconductor wafer as the object to be processed in the actual processing step.

When the particles 3 are attached to the wafer W, the exhaust pressure from the exhaust port 14 is 20 to 30 mmH.
By adjusting to ₂ O, for example, the exhaust is made uniform over the entire circumference of the wafer W, so that the particles 3 can be made to have a uniform distribution as shown in FIG. In addition, as the exhaust volume is increased to 40 to 50 mmH ₂ O, as shown in FIG.
Can be attached, and conversely the exhaust volume is small and 0-10
By using mmH ₂ O, as shown in FIG. 4C, the density of the particles 3 in the central portion can be increased. Furthermore, after forming a uniform distribution in advance, the rotation is stopped to make the exhaust non-uniform and partially increase the exhaust, so that the particles 3 are formed only at a predetermined deviation as shown in FIG. 4 (d). It is possible to obtain a distribution mode with an increased density.
In addition, the same exhaust mode enables mass production of the same distribution mode. By producing the wafer W to which the particles 3 of various distribution modes are attached, an evaluation sample corresponding to the contamination state of the wafer in the actual processing step can be obtained.

Further, if the supplied polymer particles have the same particle size, the distribution mode as shown in FIGS. 4 (a) and 5 (a) can be obtained, but the particle size of the polymer particles is 2 By mixing and supplying types 3 and 3a (3 <3a), a distribution mode in which particles 3a are scattered as shown in FIG. 5B can be obtained. Furthermore, polymer particles having three particle sizes 3, 3a, 3b (3 <3a <3
5 (c) by mixing and supplying those of b).
A distribution mode in which the particles 3a and 3b are mixed and interspersed with each other can be obtained, and the characteristics of the evaluation sample can be further simulated.

The 10 wafers W continuously coated as described above are measured (step), and it is selected whether or not the number of the coated particles 3 is a predetermined number, for example, 3000 to 5000 (step). As a result, the coated particles 3 having a predetermined number are used as an evaluation sample (step 6). If the number of particles 3 after coating is other than the predetermined number, after performing megasonic cleaning (step), the particles 3 are coated again and repeated until the number of particles 3 reaches the predetermined number.

As a result of preparing the evaluation sample as described above, 8 out of 10 particles have a predetermined number of particles 3 after coating, for example, 3000 to 5000 particles, which is larger than the conventional manufacturing method shown in FIG. The number of steps can be reduced and the yield can be improved.

All of the above-mentioned selection means can be arbitrarily selected on the panel and programmed as a series of steps.

Next, the contamination evaluation method of the present invention will be described. Here, a case where the contamination evaluation is used as an evaluation sample for brush cleaning will be described.

First, the evaluation sample manufactured as described above, that is, the wafer W to which the polymer particles 3 are uniformly attached is set in a mounting device (not shown) so that the surface of the wafer W faces upward. Next, as shown in FIG. 6A, the wafer W
A resistor, for example, a cleaning brush 60, is brought into contact with the surface of the. In this state, as shown in FIG. 6B, a predetermined load P is applied to the cleaning brush 60 to move the wafer W and the cleaning brush 60 relatively horizontally. At this time, the load P and the moving speed are appropriately changed. Then, after relatively moving the wafer W and the cleaning brush 60 for a predetermined period of time, the contact between the wafer W and the cleaning brush 60 is released, and the number of particles 3 remaining on the surface of the wafer W is measured, for example, surface-adhered particle measurement. Particles 3 corresponding to load P and moving speed, etc.
Data of decontamination can be obtained by detecting the residual ratio of.

In the above evaluation method, the case where the evaluation sample is a semiconductor wafer has been described, but the contamination evaluation can be similarly performed on the LCD substrate. That is,
An evaluation sample prepared by the same method as described above, that is, the LCD substrate G, that is, the rectangular glass substrate to which the polymer particles 3 are evenly attached, is set in a mounting device (not shown) so that the surface thereof faces upward. Next, as shown in FIG. 7A, a resistor such as a roll brush 6 is formed on the surface of the LCD substrate G.
1 is brought into contact. In this state, as shown in FIG.
A predetermined load P is applied to the roll brush 61, and the LCD substrate G
And the roll brush 61 are relatively moved horizontally. At this time, similarly to the case of the wafer W, the load P, the moving speed, and the like are appropriately changed. Then, after relatively moving the LCD substrate G and the roll brush 61 for a predetermined time, the contact between the wafer W and the roll brush 61 is released and L
Data of decontamination is obtained by measuring the number of particles 3 remaining on the surface of the CD substrate G by, for example, a surface-adhesion particle measuring machine and detecting the residual ratio of the particles 3 corresponding to the load P, the moving speed, and the like. be able to.

In the above embodiment, the case where the contamination evaluation is the cleaning process has been described. However, the contamination evaluation is not limited to the cleaning process, and the contamination evaluation is not limited to the cleaning process such as the etching process. Is also applicable.

[0038]

【Example】

Example 1 A comparative experiment was performed between the above-described manufacturing method of the present invention and the conventional manufacturing method shown in FIG. 9, and the following results were obtained.

The present invention: Polymer particles having a particle diameter of 0.3 μm and a number of 2635 particles were dried by the particle supply means 4 and supplied onto the wafer W for coating, and the number of particles was measured. The result as shown in 1 was obtained.

Comparative Example Polymer particles having a particle size of 0.3 μm and a number of 5433 were applied to a wafer by the manufacturing method shown in FIG. 9, and the number of particles was measured. The results shown in Table 2 were obtained. Was obtained.

[0041]

[Table 1]

[0042]

[Table 2]

As a result of the above experiment, in the production method of the present invention, most of the polymer particles had a particle size of around 0.3 μm, but in the comparative example, the polymer particles had a particle size of 0. Many other than 3 μm were detected. As a result, according to the production method of the present invention, the number of coated particles is stable, the reproducibility of the evaluation sample is high, and the coating uniformity is good. Further, in the conventional manufacturing method, a large amount of impurities such as contamination other than the polymer particles was detected, but according to the manufacturing method of the present invention, the adhesion other than the polymer particles was small.

Example 2 Next, another example of the contamination evaluation method of the present invention will be described. Here, a case where the contamination evaluation is used as an evaluation sample for brush cleaning will be described.

After applying the same polymer particles as described above to the wafer, the wafer is subjected to a predetermined time / predetermined temperature, for example, 13
0 ℃, 140 ℃, 150 ℃, 160 ℃, 170 ℃ and 1
After heating at 80 ° C., the removal rate was examined, and the results shown in FIG. 10 were obtained. As a result, it was found that by increasing the heating temperature, the adhesive force of the polymer particles to the contamination-evaluating substrate, for example, the wafer, was increased, and the removal rate was lowered, that is, the residual ratio of the particles was increased. Also, by changing the heating temperature, it is possible to prepare evaluation samples of different types having different adhesive forces.

Further, when the same polymer particles as described above were heated (for example, heated to 160 ° C.) and adhered and when they were adhered without heating, the brush pressing amount was changed and the removal rate was examined. The results shown in are obtained. As a result, when adhered without heating, the removal rate is about 85% when the brush pressing amount is 0.5 mm, and when the brush pressing amount is changed within the range of 1 to 2.5 mm, the removal ratio is about 85%. Almost no change was seen at 92.5 to 97.5%, but when adhered by heating at a temperature of 160 ° C., the brush pressing amount is 0.5 mm.
The removal rate is 17.5%, and when the brush pressing amount is changed within the range of 1 to 2.5 mm, the removal rate is 32.
It was found that the change greatly changed to 5 to 90%.

As a result of the above-mentioned experiment, it was found that it is suitable as an evaluation sample for brush cleaning because it is possible to distinguish the appropriate brush pressing amount according to the adhesion of the particles to be evaluated adhered to the contamination evaluation substrate. . Therefore, the brush cleaning can be efficiently performed by adjusting the pressing amount of the brush based on the data obtained from this experiment.

In the above-mentioned embodiment, the removal rate of particles, that is, the residual ratio was examined by changing the pressure by changing the pressing amount of the brush as the resistor. However, the evaluation sample of cleaning other than brush cleaning, for example, megasonic cleaning was used. In that case, the optimum cleaning conditions can be found by changing the amount of pressing of the brush and changing the amount of cleaning liquid such as pure water or the water pressure.

[0049]

【The invention's effect】

1) According to the invention described in claims 1 and 5, the substrate for contamination evaluation is rotated under an atmosphere of a predetermined temperature, and the dried particles for contamination are supplied to the surface of the substrate, thereby Since the particles can be evenly adhered (coated) on the top surface, it is possible to easily prepare a contamination evaluation sample in the same state with a stable number of coated particles. Therefore, the processing capacity evaluation of the cleaning device can be made uniform.

2) According to the second aspect of the present invention, a heat-meltable polymer is used for the particles, the dried particles are supplied to the surface of the substrate while rotating the substrate, and the particles are melted by heating. Since it adheres to the substrate by using the
Further, it is possible to obtain uniform adhesion. Further, by changing the heating temperature, it is possible to manufacture the contamination evaluation substrates of different types having different adhesive forces or different particle sizes.
Therefore, a contamination evaluation sample corresponding to the actual contamination of the object to be processed can be obtained.

3) According to the third aspect of the invention, the particle size of the particles can be adjusted by separating the suspension of the particles and the predetermined liquid by gas-liquid separation and drying and supplying the suspension onto the substrate. Therefore, it is possible to adhere (coat) particles having different particle diameters according to the actual contamination state to the substrate.

4) According to the invention described in claims 4 and 6,
By supplying the particles to the substrate after the particles have been subjected to the antistatic treatment, it is possible to prevent the particles from adhering to each other due to static electricity, so that the particles can be more uniformly adhered (coated). it can.

5) According to the invention described in claim 7, the resistor is brought into contact with the surface of the substrate manufactured by the manufacturing method according to any one of claims 1 to 4 at a predetermined pressure, and the substrate and the resistor are contacted with each other. Since the residual ratio of the particles for the evaluation target attached to the substrate is detected by relatively moving the and, it is possible to accurately detect the residual ratio of the contamination target such as the particle attached to the substrate, which is highly accurate. You can get the pollution evaluation of.

[Brief description of the drawings]

FIG. 1 is a schematic cross-sectional view showing an example of a contamination evaluation substrate manufacturing apparatus according to the present invention.

FIG. 2 is a schematic configuration diagram of a particle supply means in the present invention.

FIG. 3 is an explanatory diagram showing an adhesion state (a) of particles before heating and an adhesion state (b) of particles after heating.

FIG. 4 is an explanatory diagram showing an adhesion (coating) distribution of different particles.

FIG. 5 is an explanatory diagram showing an adhesion (coating) distribution when the particle diameters are the same (a), two kinds (b) and three kinds (c).

FIG. 6 is a perspective view (a) and a side view of a main part (b) showing an example of the contamination evaluation method of the present invention.

FIG. 7 is a perspective view (a) and a side view of a main part (b) showing another example of the contamination evaluation method of the present invention.

FIG. 8 is a flowchart showing a procedure of a method of manufacturing a contamination evaluation substrate of the present invention.

FIG. 9 is a flowchart showing a procedure of a conventional method for manufacturing a contamination evaluation substrate.

FIG. 10 is a graph showing the relationship between heating temperature and particle removal rate.

FIG. 11 is a graph showing the relationship between the removal rate of particles adhered by heating, the particles adhered by non-heating, and the brush pressing amount.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 processing chamber 2 spin chuck (rotation holding means) 3,3a, 3b particles 4 particle supply means 14 exhaust port (air flow forming means) 15 exhaust device (air flow forming means) 16 air supply port (air flow forming means) 18 fan (air flow) Forming means) 31 Heater (heating means) 50 Ion irradiator (antistatic means) 60 Cleaning brush (resistor) 61 Roll brush (resistor) W Semiconductor wafer (contamination evaluation substrate) G LCD substrate (contamination evaluation substrate)

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification number Reference number within the agency FI Technical indication location H01L 21/66 G01N 1/28 R (72) Inventor Kazuyuki Goto 2655 Tsukyu, Kikuyo-cho, Kikuchi-gun, Kumamoto Prefecture Address Tokyo Electron Kyushu Co., Ltd. Kumamoto Office

Claims (7)

[Claims] 1. A method for producing a contamination evaluation substrate in which particles to be evaluated are attached to the surface of a substrate for contamination evaluation sample to produce a contamination evaluation substrate, wherein the substrate is rotated in a predetermined temperature atmosphere, A method for producing a contamination evaluation substrate, which comprises supplying the dried particles to the surface of the substrate. 2. A method for producing a contamination evaluation substrate, comprising producing particles for evaluation by adhering particles to be evaluated on the surface of a substrate for contamination evaluation sample, wherein a heat-meltable polymer is used for the particles, A method for producing a contamination evaluation substrate, characterized in that the dried particles are supplied to the surface of the substrate while rotating, and the particles are melted by heating and adhered onto the substrate. 3. The method for producing a contamination evaluation substrate according to claim 1 or 2, wherein a suspension of particles and a predetermined liquid is separated into gas and liquid, dried, and supplied onto the substrate. Method of manufacturing evaluation board. 4. The method for producing a contamination evaluation substrate according to claim 1, wherein the particles are subjected to an antistatic treatment and then the particles are supplied onto the substrate. 5. A contamination evaluation substrate production apparatus for producing particles for evaluation by adhering particles to be evaluated on the surface of a substrate for contamination evaluation sample, and a treatment chamber for forming an atmosphere of a predetermined temperature; It is provided with: a rotation holding means which is disposed in a chamber and holds the substrate rotatably; and a particle supply means which dries the particles and supplies the particles onto the substrate at a predetermined particle size and flow rate. An apparatus for producing a contamination evaluation substrate. 6. A contamination-evaluating substrate producing apparatus for producing a contamination-evaluating substrate by adhering particles to be evaluated on the surface of a substrate for contamination-evaluating sample, and a treatment chamber for forming an atmosphere at a predetermined temperature; A rotation holding means which is disposed in a chamber and holds the substrate rotatably, a particle supply means for drying the particles and supplying the particles onto the substrate at a predetermined particle size and flow rate, and a supply from the particle supply means. And an antistatic means for preventing electrification of the generated particles. 7. A substrate manufactured by the manufacturing method according to any one of claims 1 to 4 is prepared, and a resistor is brought into contact with the surface of the substrate at a predetermined pressure, and the substrate and the resistor are made to face each other. The method for evaluating contamination is characterized in that the residual ratio of particles for evaluation adhered on the substrate is detected by moving the particles.