JP2004014869A - Developing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To reduce a development defect and to wash away a developer in a short time when performing developing processing by supplying the developer to a substrate. <P>SOLUTION: After the developer is supplied to the substrate formed with an exposed resist film on its surface, the substrate is cleaned by moving a washing liquid feed nozzle having a discharge port formed approximately equally with or longer than the width of an effective area on the substrate from one terminal side of the substrate to its other terminal side, while setting a distance to the surface of the substrate to ≤0.4mm so that the substrate is immersed in the developer in the discharge port of the washing liquid feed nozzle. In such a case, the developer containing a resist component on the surface of the substrate is discharged with a strong discharging force by the synergistic effect of operation of extrusion when the washing liquid collides with the surface of the substrate, and operation of extrusion by a side wall surface of the washing liquid feed nozzle. As a result, the developer or the resist component is suppressed from being residual on the surface of the substrate to obtain a pattern in which the development defect is reduced. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a developing device that applies a developing solution to a substrate that has been subjected to an exposure process after a resist has been applied to the surface of the substrate and performs a developing process.
[0002]
[Prior art]
A mask for forming a circuit pattern on the surface of a semiconductor wafer or an LCD substrate of a liquid crystal display is formed, for example, by applying a photoresist solution (hereinafter referred to as “resist”) to the surface of the wafer and irradiating with light or the like. For example, if the film is a negative type, the light-irradiated portion is cured, so that the non-cured portion, that is, the resist easily soluble portion is formed by dissolving with a developing solution. Further, for example, in the case of a positive resist, an exposed portion is dissolved by a developer.
[0003]
For example, the manner in which a negative resist is developed will be described. As shown in FIG. 16, a developing solution is first applied to the resist 10 on the surface of, for example, a semiconductor wafer (hereinafter, referred to as a wafer) W which has been exposed. Thereafter, when the state is maintained for a predetermined time, the portion 11 soluble in the developer is dissolved. Subsequently, a cleaning solution is supplied to the surface of the wafer W to wash away the developing solution on the wafer W, and is dried to obtain a resist pattern 12.
[0004]
In a developing process using a conventional developing device, as shown in FIG. 17A, a spin chuck 13 that holds an exposed wafer in a substantially horizontal posture and rotates a wafer W around a vertical axis is used. The developing process is performed with the wafer placed. First, the developing solution D is applied to the entire surface of the wafer W, and then static development is performed for a predetermined time, for example, about 60 seconds, so that the developing reaction proceeds. After a lapse of a predetermined time, as shown in FIG. 17B, a cleaning liquid R such as pure water is supplied from a cleaning liquid nozzle 14 set to face the center of the wafer surface, for example, and the wafer By rotating W at a peripheral speed of, for example, about 1000 rpm, the developer D containing the resist-dissolving component is washed away by the action of the centrifugal force, and finally, the wafer W is rotated at a high speed as shown in FIG. dry.
[0005]
[Problems to be solved by the invention]
However, in recent years, the size of the wafer W has increased, and the conventional method of washing the developing solution D using the action of the centrifugal force while rotating the wafer W requires the centrifugal force acting on the peripheral portion of the wafer W and The difference from the acting centrifugal force becomes large, and the washing may be insufficient at the center where the centrifugal force is weak. That is, for example, the dissolved components of the resist in the valleys of the resist pattern have a high concentration, and further include those in which the resist components once dissolved have been deposited or undissolved resist particles. May have become. When the centrifugal force is small, such a melted product has a stronger frictional force with, for example, the surface of the wafer W or the wall surface of the resist pattern than the centrifugal force. It may be left. Then, there is a concern that this dissolved product is dried while adhering to the pattern surface (resist surface, base surface) and becomes a development defect.
[0006]
On the other hand, a method of increasing the number of rotations of the wafer W to increase the centrifugal force at the center is being studied. In this case, however, the centrifugal force at the peripheral portion is too strong and the resist pattern is peeled off or falls down. There is a concern that it will.
[0007]
The present invention has been made under such circumstances, and it is an object of the present invention to provide a technique capable of reducing development defects and cleaning a developer in a short time.
[0008]
[Means for Solving the Problems]
The developing device of the present invention is a developing device in which a resist is applied to a surface of a substrate and the exposed substrate is developed.
A substrate holding unit for holding the substrate horizontally,
A developer supply nozzle for supplying a developer to the surface of the substrate held by the substrate holding unit;
A cleaning liquid supply nozzle for supplying a cleaning liquid to the surface of the substrate on which the developing liquid is applied, having a discharge port formed over a length substantially equal to or longer than the width of the effective area of the substrate; ,
The lower end of the discharge port is below the liquid level of the developing solution and the separation distance from the surface of the substrate is 0.4 mm or less.The cleaning liquid supply nozzle is positioned from one end of the substrate to the other end. And a moving mechanism for moving the moving mechanism.
[0009]
According to the developing device of the present invention, the action of the lateral extrusion generated when the cleaning liquid discharged from the discharge port of the cleaning liquid supply nozzle collides with the surface of the substrate, and the function of the extrusion by the side wall surface of the cleaning liquid supply nozzle. In combination, the developer containing the resist component on the substrate surface can be discharged. For this reason, it is possible to suppress a developer or a resist component from remaining on the surface of the substrate, so that a pattern with few development defects can be obtained.
[0010]
A developing device of another invention is a developing device in which a resist is applied to the surface of a substrate and the exposed substrate is developed.
A substrate holding unit for holding the substrate horizontally,
A developer supply nozzle for supplying a developer to the surface of the substrate held by the substrate holding unit;
A cleaning liquid supply nozzle for supplying a cleaning liquid to the surface of the substrate on which the developing liquid is applied, having a discharge port formed over a length substantially equal to or longer than the width of the effective area of the substrate; ,
A gas blowing port provided on a side surface portion on the traveling direction side of the cleaning liquid supply nozzle, and inclined forward.
A moving mechanism that moves the cleaning liquid supply nozzle from one end side to the other end side of the substrate at a height position where the lower end of the discharge port is lower than the liquid level of the developer. I do.
[0011]
The cleaning liquid supply nozzle may have, for example, a plurality of discharge ports arranged in the traveling direction, and each of these discharge ports may be provided with, for example, a flow rate adjusting unit. Further, for example, the cleaning liquid may be supplied after rotating the substrate on which the developing liquid is applied for a predetermined time. Furthermore, after the cleaning liquid is moved from one end side to the other end side of the substrate while discharging the cleaning liquid from the discharge port of the cleaning liquid supply nozzle, the substrate is cleaned while supplying the cleaning liquid to a central portion of the substrate, for example. Rotating cleaning may be performed.
[0012]
BEST MODE FOR CARRYING OUT THE INVENTION
A first embodiment of the developing device according to the present invention will be described. FIG. 1 is a schematic sectional view of the developing device, and FIG. 2 is a schematic plan view. In the drawing, reference numeral 2 denotes a spin chuck which holds the center of the back surface of, for example, an 8-inch wafer W, which is a substrate, in a vacuum and holds it substantially horizontally. The spin chuck 2 is configured to be able to rotate and move up and down by a drive unit 20. ing. An outer cup 30 and an inner cup 31 are provided so as to surround the side circumference of the wafer W in a state where the wafer W is suction-held by the spin chuck 2. The inner cup 31 is formed so that the upper side of the cylinder is inclined upward and inward, and the upper side opening is narrower than the lower side opening. Is configured to move up and down in conjunction with a part of the moving range of the. Further, below the spin chuck 2, there is provided a disk 33 surrounding the rotation axis of the spin chuck 2. Further, a concave portion is formed around the entire circumference of the disk 33, and a drain port 34 is formed on the bottom surface. And a liquid receiving portion 35 in which is formed. A ring 36 having a mountain-shaped cross section whose upper end approaches the back surface of the wafer W is provided at the peripheral edge of the disk 33.
[0013]
Next, the developer supply nozzle 4 serving as a developer supply unit for supplying (applying) the developer to the wafer W sucked and held by the spin chuck 2 will be described. As shown in FIGS. 1 and 3, for example, the developing solution supply nozzle 4 forms a developing solution discharge region over a length equal to or longer than the width of an effective region (device forming region) of the wafer W, for example. In order to be able to do so, for example, a slit-shaped discharge port 40 arranged in the longitudinal direction of the nozzle and a developer storage section 42 communicated with the discharge port 40 via a developer flow path 41 are provided. The developer storage section 42 is connected to a developer supply section 44 via a supply path 43, for example, a pipe, and an opening / closing valve V1 is provided in the middle thereof. In the drawing, reference numeral 45 denotes a buffer rod made of, for example, a quartz rod or a porous body disposed inside the discharge port 40. The discharge pressure of the developer from the flow path 41 is reduced by the buffer rod 45. Thus, the developer is prevented from leaking from the discharge port 40. As shown in FIG. 2, such a developer supply nozzle 4 can be moved up and down by a first moving mechanism 46, and further moves laterally along a guide rail G provided outside the outer cup 30. It is provided as possible. The developing solution supply nozzle 4 is not limited to the above-described configuration. For example, the developing solution supply nozzle 4 may simply be formed with a slit-shaped discharge port 40 and may not be provided with the buffer rod 45.
[0014]
Next, the cleaning liquid supply nozzle 5 serving as cleaning liquid supply means for supplying the cleaning liquid to the wafer W will be described. As shown in FIG. 4, the cleaning liquid supply nozzle 5 has a nozzle so as to form a discharge area of the cleaning liquid over a length equal to or longer than the width of an effective area (device formation area) of the wafer W, for example. The apparatus includes a slit-shaped discharge port 50 arranged in the longitudinal direction, for example, and a cleaning liquid reservoir 52 communicated with the discharge port 50 via a cleaning liquid flow path 51. The cleaning liquid storage section 52 is connected to a cleaning liquid supply section 54 via a supply path 53, for example, a pipe, and an opening / closing valve V2 is provided in the middle thereof. Reference numeral 55 denotes a buffer rod having the above-described function.
[0015]
The cleaning liquid supply nozzle 5 can be moved up and down by a second moving mechanism 56. Further, the cleaning liquid supply nozzle 5 passes through the upper side of the wafer W from a position at one end of the guide rail G, and faces the standby position with the wafer W interposed therebetween. It is provided so that it can move horizontally to the position where Here, the positions where the first moving mechanism 46 and the second moving mechanism 56 are shown in FIG. 2 are the standby positions of the developer supply nozzle 4 and the cleaning liquid supply nozzle 5 during the non-operation described above, respectively. Here, for example, standby portions 57 and 58 of a first moving mechanism 46 and a second moving mechanism 56 formed of a vertically movable plate-like body are provided. The outer cup 30, the inner cup 31, the elevating unit 32, the first moving mechanism 46 and the second moving mechanism 56 are formed as a unit surrounded by a box-shaped housing 59. The wafer W is loaded / unloaded by a transfer arm (not shown) through a transfer port (not shown).
[0016]
The driving unit 20, the elevating unit 32, the first moving mechanism 46 and the second moving mechanism 56, and the opening / closing valves V1 and V2 described above are connected to the control unit 6, respectively. Each part is opened and closed by opening and closing valves V1 and V2, moving the developer supply nozzle 4 by the first moving mechanism 46, and moving the cleaning liquid supply nozzle 5 by the second moving mechanism 56 in accordance with the elevation of the second moving mechanism 2. It is possible to control in conjunction with. At this time, the timing of the opening / closing operation of the opening / closing valves V1 and V2, the timing of starting and stopping the movement of the first moving mechanism 46 and the second moving mechanism 56, and the moving speed are set according to the processing recipe set in advance by the control unit 6. It is controlled on the basis of this.
[0017]
Next, a process of performing a developing process using the above-described developing device will be described with reference to FIG. First, the spin chuck 2 is raised to a position above the outer cup 30 in a state where both the outer cup 30 and the inner cup 31 are set at the lowered position. Is transferred from the transfer arm (not shown) to the spin chuck 2. Then, the spin chuck 2 is lowered so that the wafer W comes to a predetermined position indicated by a solid line in FIG. 1, for example.
[0018]
Subsequently, the developer supply nozzle 4 is guided by the first moving mechanism 46 to a discharge start position between the outer cup 30 and the peripheral edge of the wafer W, and then the discharge port 40 is positioned at a position higher than the surface level of the wafer W by, for example, about 1 mm. Is set to Here, while opening the opening / closing valve V1 and starting discharge of the developer D from the discharge port 40, as shown in FIG. The developing solution D is applied to the surface of the wafer W by moving at a scanning speed of, for example, about 65 mm / sec to form a developing solution film having a thickness of, for example, about 1 mm. Subsequently, as shown in FIG. 5B, static development is performed for maintaining this state for a predetermined time, for example, about 60 seconds, and the development reaction proceeds. On the other hand, after passing through the other end of the wafer W, the developer supply nozzle 4 closes the opening / closing valve V1 to stop the discharge of the developer D, and returns to the standby unit 57.
[0019]
Subsequently, the cleaning liquid supply nozzle 5 is guided to the discharge start position by the second moving mechanism 56, and then the cleaning liquid supply nozzle 5 descends to move the front end of the discharge port 50, which is the lower end of the nozzle, to the surface of the wafer W. The distance L is set to be 0.4 mm or less, for example, 0.3 mm. Here, the surface of the wafer W means the surface of the resist film. However, the thickness of the resist film in which a development defect which is a problem of the present invention occurs is usually about 0.5 μm, so that the thickness of the resist film is separated. It is sufficiently smaller than the distance L. Then, as shown in FIG. 5 (c), the opening / closing valve V2 is opened, and the cleaning liquid R, for example, pure water is supplied from the discharge port 50 at a flow rate of, for example, 2.0 liter / min (at a flow rate of 0.05 m / sec), for example, 1.7 kgf. / Cm ² The discharge is performed at a discharge pressure of (0.17 MPa), and the cleaning liquid supply nozzle 5 is moved from one end to the other end of the wafer W at a scan speed of, for example, about 120 mm / sec. If this operation is referred to as scan cleaning, scan cleaning is subsequently performed twice, for a total of three times. In this example, it takes about 1.7 seconds to scan from one end to the other end of the 8-inch size wafer W, so that the scan cleaning time is about 5.1 seconds. The cleaning liquid supply nozzle 5 closes the opening / closing valve V2 to stop discharging the cleaning liquid R, and is returned to the standby section 59.
[0020]
Here, how the surface of the wafer W is cleaned will be described in detail. As schematically shown in FIG. 6, when the cleaning liquid supply nozzle 5 is scanned, the developer D on the wafer W is pushed forward by the side wall surface of the cleaning liquid supply nozzle 5 so that the liquid flows. Is formed, and the surface layer of the dissolved product (developing paddle) of the resist in the valley of the pattern on the front side is swept out by the liquid flow. The cleaning liquid R discharged from the discharge port 50 of the cleaning liquid supply nozzle 5 that passes immediately thereafter sweeps out the remaining dissolved product, for example, the dissolved product attached to the bottom or the corner of the pattern by the discharge pressure. The dissolved product swept out from the valleys of the pattern in this manner is diluted by the cleaning liquid R supplied to the wafer W, and removed from the wafer W together with the cleaning liquid R in a later step. In the first scan cleaning, most of the dissolved products are removed and the wafer W is cleaned at the second and subsequent times while the wafer W is rotated at, for example, 10 to 1000 rpm. Of course, it may be performed while changing the number of revolutions.
[0021]
Referring back to FIG. 5, after the developing solution D on the surface of the wafer W is replaced with the cleaning solution R as described above, the outer cup 30 and the inner cup 31 are set to the ascending position by the elevating unit 32. As shown in (e), in order to dry the wafer W to some extent, spin drying in which the cleaning liquid R is shaken by rotating the wafer W at a rotation speed of, for example, about 4000 rpm is performed. Thereafter, the wafer W is carried out of the developing device by the transfer arm (not shown), and the developing process is completed.
[0022]
In the above-described embodiment, the action of pushing out the cleaning liquid R ejected from the ejection port 50 in the horizontal direction when the washing liquid R collides with the surface of the wafer W and the action of pushing out by the side wall surface of the washing liquid supply nozzle 5 are combined. Thus, the developing solution D containing the resist component on the wafer W can be discharged by the strong discharge force acting in the lateral direction. For this reason, an adhesive force (frictional force with the wafer W or the wall surface of the pattern) acts strongly, and a discharge force exceeding the adhesive force is exerted even on a dissolved product at a bottom or a corner of a valley of the pattern. Then you can get rid of them. Therefore, it is possible to suppress the developer and the resist component from remaining on the surface of the wafer W, and it is possible to obtain a resist pattern with few development defects.
[0023]
A second embodiment of the present invention will be described. This embodiment is an embodiment in which gas supply means is added to the cleaning liquid supply nozzle 5 shown in FIG. 4, but the discharge port 50 is set longer than the above-described nozzle. As shown in FIG. 7, the gas supply means 7 supplies gas such as air provided on the side wall surface of the cleaning liquid supply nozzle 5 above the liquid level of the developer D to the wafer W, for example. An outlet 70 for jetting toward the surface is provided. The outlet 70 is set to be inclined at an angle θ, for example, 0 ° to 60 ° with respect to the axis (discharge direction) of the discharge port 50, for example. The outlet 70 is formed of a plurality of air supply holes having a diameter of, for example, 0.4 mm, and is arranged at intervals in the length direction of the cleaning liquid supply nozzle 5, for example. Further, the outlet 70 is connected to an external air supply path 72, for example, one end of a pipe via a gas storage section 71 inside the cleaning liquid supply nozzle 5, and the other end of the air supply path 72 is connected to the gas supply section. 73, and an opening / closing valve V3 is provided in the middle thereof. In this case, the cleaning liquid R is supplied by the cleaning liquid supply nozzle 5 to the wafer W on which the static development has been performed through the steps shown in FIGS. Air is ejected from the port 70 toward the wafer W at a flow rate of, for example, 2.0 liter / minute. Note that the outlet 70 may be below the liquid level of the developing solution D. However, in this case, the outlet 50 of the cleaning liquid supply nozzle 5 is contaminated. Therefore, it is advisable to set the outlet 70 above the liquid level of the developer D.
[0024]
In the above-described second embodiment, when the supply nozzle 5 is scanned, the gas ejected from the outlet 70 on the scanning direction toward the developer D on the front side causes the development on the wafer W to be performed. A liquid flow occurs in the liquid D, and the dissolved product of the resist is wound up, and the cleaning effect is improved in combination with the sweeping action by the cleaning liquid R discharged from the discharge port 50 that passes thereafter. For this reason, it is possible to prevent the dissolved product from remaining on the surface of the wafer W, and it is possible to obtain the same effect as in the above-described case.
[0025]
Further, the outlet 70 is not limited to the configuration provided obliquely as described above, and as shown in FIG. 8A, the outlet 70 is directed directly downward so as to spray the cleaning liquid R at a position immediately before the outlet 50. Alternatively, as shown in FIG. 8 (b), it may be provided directly below and diagonally. Further, as shown in FIG. 8 (c), for example, a diagonally inclined outlet shown in FIG. The air blown out from 70 may be blown from above to a position (point P in the figure) where the air reaches the liquid level of the developer D. Even with such a configuration, by blowing air, the dissolved product of the resist is wound up, and the same effect as in the above case can be obtained.
[0026]
In the present invention, the cleaning liquid supply nozzle 5 is not limited to the configuration having one slit-shaped discharge port. For example, as shown in FIG. 9 showing an example of the cleaning liquid supply nozzle 5, a plurality of cleaning liquid supply nozzles 5 are arranged along the traveling direction. A configuration in which three slit-shaped outlets 50a, 50b, and 50c may be provided, and a flow rate adjusting unit such as a flow rate adjusting valve V2a may be used to adjust the flow rate of each of the outlets 50a, 50b, and 50c. , V2b, and V2c. In this case, the flow rate of each discharge port may be set to be the same. For example, in order to sweep out insoluble matter having a small particle diameter first, and then sweep out an insoluble matter having a large particle diameter, for example, 0.5 to 4 In the flow rate range of 0.0 liter / min, for example, it is preferable that the flow rate of the discharge port 50a on the front side is set to be the smallest and the flow rate is increased in the order of the discharge port 50b and the discharge port 50c. Even with such a configuration, the same effect as in the above-described case can be obtained, and by increasing the supply amount of the cleaning liquid R, cleaning can be performed in a short cleaning time.
[0027]
Further, in the present invention, after the cleaning described in FIG. 5C is performed, a spin-type cleaning may be subsequently performed as illustrated in FIG. That is, after the cleaning is performed by the cleaning liquid supply nozzle 5 under the same conditions as described above and the cleaning liquid supply nozzle 5 is retracted, another cleaning liquid supply nozzle 8 for supplying the cleaning liquid R to the central portion of the wafer W is used. Is set at a height position of, for example, about 2 mm so as to face the center of the wafer W, and then the wafer W is rotated at a rotation speed of, for example, about 100 to 1000 rpm, and the cleaning liquid R is supplied at a flow rate of, for example, 1 liter / minute. To the surface. After a lapse of a predetermined time, for example, 5 seconds, the supply of the cleaning liquid R is stopped and spin drying is performed. In this case, the effect of the cleaning by the scanning method described above and the effect of the cleaning by the spin method using the centrifugal force are combined, whereby the effect of the cleaning is improved, and the same effect as the above case can be obtained. it can.
[0028]
Furthermore, in the present invention, after the developer D is supplied to the surface of the wafer W and the static development is completed, and before the cleaning liquid R is supplied, the spin chuck 2 is rotated to rotate the wafer W to, for example, 100 rpm to 1000 rpm. The rotation may be performed for a predetermined time, for example, 0.5 to 3 seconds at about the number of rotations. In this case, the developer D on the wafer W can be shaken off to some extent by the action of the centrifugal force before the supply of the cleaning liquid R. And the same effect as in the above case can be obtained.
[0029]
Further, in the present invention, the discharge port 50 is not limited to the slit shape, and may have a configuration in which discharge holes having a diameter of, for example, about 0.4 mm are arranged at intervals on the lower surface side of the nozzle along the longitudinal direction. Furthermore, the present invention is not limited to the configuration in which the supply nozzle 5 and the cleaning liquid supply nozzle 6 are separate nozzles. For example, as shown in FIG. May be provided with a common nozzle 7 having a common discharge port 70 connected thereto, and the developer D or the cleaning liquid R may be supplied by switching between the valves V1 and V2.
[0030]
Next, an example of a coating / developing apparatus in which the above-described developing apparatus is incorporated in a developing unit will be described with reference to FIGS. In the drawing, reference numeral B1 denotes a cassette mounting portion for loading and unloading a cassette C in which, for example, 13 wafers W as substrates are hermetically stored, and a mounting table provided with a mounting portion 91a on which a plurality of cassettes C can be mounted. 91, an opening / closing section 92 provided on a wall surface in front of the mounting table 91, and a transfer means 93 for taking out the wafer W from the cassette C via the opening / closing section 92 are provided.
[0031]
A processing unit B2 surrounded by a casing 100 is connected to the back side of the cassette mounting unit B1, and the processing unit B2 is a shelf unit in which heating and cooling system units are multi-tiered in order from the near side. U1, U2, and U3 and main transfer units 101A and 101B that transfer a wafer W between processing units including a coating / developing unit described later are arranged alternately. That is, the shelf units U1, U2, U3 and the main transfer means 101A, 101B are arranged in a line in front and rear as viewed from the cassette mounting portion B1, and an opening (not shown) for wafer transfer is formed at each connection site. The wafer W can freely move in the processing section B1 from the shelf unit U1 on one end to the shelf unit U2 on the other end. The main transport units 101A and 101B are provided on one side of the shelf units U1, U2, and U3 arranged in the front-rear direction when viewed from the cassette mounting portion B1, and on one side of, for example, the right liquid processing units U4 and U5 described later. It is placed in a space surrounded by a partition wall 102 composed of a portion and a rear portion forming one surface on the left side. In the drawings, reference numerals 103 and 104 denote temperature and humidity control units provided with a temperature control device for the processing solution used in each unit, a duct for temperature and humidity control, and the like.
[0032]
For example, as shown in FIG. 13, the liquid processing units U4 and U5 are provided with a coating unit COT and a coating unit COT shown in FIGS. The developing unit DEV incorporating the developing device, the anti-reflection film forming unit BARC, and the like are stacked in a plurality of stages, for example, five stages. The above-described shelf units U1, U2, and U3 have a configuration in which various units for performing pre-processing and post-processing of the processing performed in the liquid processing units U4 and U5 are stacked in a plurality of levels, for example, in ten levels. .
[0033]
An exposure unit B4 is connected to the back side of the shelf unit U3 in the processing unit B2 via, for example, an interface unit B3 including a first transfer chamber 106 and a second transfer chamber 107. Inside the interface section B3, a shelf unit U6 and a buffer cassette C0 are provided in addition to two transfer means 108 and 109 for transferring the wafer W between the processing section B2 and the exposure section B4.
[0034]
One example of the flow of wafers in this apparatus is as follows. First, when the cassette C containing the wafer W is placed on the mounting table 91 from the outside, the lid of the cassette C is removed together with the opening / closing section 92 and the transfer means 93 The wafer W is taken out. The wafer W is transferred to the main transfer means 101A via a transfer unit (not shown) forming one stage of the shelf unit U1. For example, a hydrophobizing treatment and a cooling treatment are performed, and thereafter, a resist liquid is applied in the coating unit COT. When the resist film is formed on the surface in this manner, the wafer W is heated by a heating unit forming one shelf of the shelf units U1 to U3, further cooled, and then transferred to the interface unit B3 via the transfer unit of the shelf unit U3. Is carried in. In the interface section B3, the wafer W is conveyed to the exposure section B4 via, for example, the transfer means 108 → the shelf unit U6 → the transfer means 109, and is exposed. After the exposure, the wafer W is transferred to the main transfer unit 101A by the reverse route, and is developed by the developing unit DEV, thereby forming a resist mask. Thereafter, the wafer W is returned to the original cassette C on the mounting table 91.
[0035]
Further, the present invention can be applied to processing of a substrate other than a semiconductor wafer as a substrate to be processed, for example, an LCD substrate and a reticle substrate for a photomask.
[0036]
【Example】
Next, an example in which the effect of the present invention is confirmed by using the above-described developing device will be described.
(Example 1)
This example is Example 1 using the developing device according to the first embodiment of the present invention. In the first embodiment, the substrate subjected to the resist application and the exposure processing in the previous step is subjected to the development processing based on the step shown in FIG. The separation distance L and the cleaning time T were set to various set values. Then, a surface defect inspection (an inspection device manufactured by KLA-tencor) was performed on the surface of the substrate after the development processing, and the number of development defects was measured. In the inspection, development defects having a size of 0.08 μm or more were counted. The specific test conditions are shown below.
・ Substrate: 8-inch size semiconductor wafer
・ Film thickness of developer D: 1.5 mm
-Still development time: 60 seconds
Scanning speed of the cleaning liquid supply nozzle 5: 120 mm / sec
・ Flow rate of cleaning liquid R: 2.0 liter / second
-Separation distance L: 0.3 mm, 0.4 mm, (0.6 mm), (1.0 mm), 1.5 mm, 5 mm, and those in parentheses were performed with a cleaning time of 5 seconds.
・ Number of times of scan cleaning (cleaning time): 3 times (5 seconds), 6 times (10 seconds) (for each separation distance L)
[0037]
(Results and consideration of Example 1)
The result of Example 1 is shown in FIG. First, when cleaning is performed for 5 seconds, when the separation distance L is set to be larger than 1.5 mm, the number of defects is counted 65,000 (detection upper limit value). Begins to decrease and sharply decreases below 0.6 mm. The number of defects is about 20 at 0.3 mm and 0.4 mm. Further, when the cleaning time T is set to 10 seconds, the number of defects is about 50 when the separation distance L is 0.3 mm and 0.4 mm, and about 50 when the separation distance L is 1.5 mm. Although not seen, the number of defects increases when set to be larger than 1.5 mm. That is, it was confirmed that the tip of the discharge port 50 of the cleaning liquid supply nozzle 5 was immersed in the developer D, and the number of defects could be reduced by setting the separation distance L to 0.4 mm or less.
[0038]
(Example 2)
This example is Example 2 using the developing device according to the second embodiment of the present invention. In the second embodiment, the development processing is performed on the substrate on which the resist has been applied and exposed in the previous step in the same manner as in the first embodiment, based on the step shown in FIG. At this time, the cleaning liquid R was supplied using the cleaning liquid supply nozzle 5 shown in FIG. The measurement of the development defect is the same as in Example 1. The specific test conditions are shown below.
・ Substrate: 8-inch size semiconductor wafer
-Film thickness of developer D: 1.5 mm
-Still development time: 60 seconds
Scanning speed of the cleaning liquid supply nozzle 5: 120 mm / sec
・ Flow rate of cleaning liquid R: 2.0 liter / second
-Separation distance L: 0.4 mm, 1.5 mm
・ Air flow rate: 2.0 liter / sec
・ Inclination angle θ: 60 °
・ Number of times of scan cleaning (cleaning time): 9 times (15 seconds)
[0039]
(Comparative Example 1)
This example is Comparative Example 2 performed under the same conditions as in Example 2 except that no gas was supplied.
[0040]
(Results and consideration of Example 2 and Comparative Example 1)
The results of Example 2 and Comparative Example 1 are also shown in FIG. The result of Comparative Example 1 in which gas was not supplied was about 40 development defects, whereas the number of development defects in Example 2 in which gas was supplied was suppressed to about 10. That is, it is confirmed that the supply of the gas causes a liquid flow in the developer D, and the liquid flow sweeps out the dissolved product, and the cleaning effect is improved in combination with the action of the cleaning liquid R. Was.
[0041]
【The invention's effect】
As described above, according to the present invention, development defects can be reduced, and the developer can be washed in a short time.
[Brief description of the drawings]
FIG. 1 is a longitudinal sectional view showing a developing device according to a first embodiment of the present invention.
FIG. 2 is a plan view illustrating the developing device according to the first exemplary embodiment of the present invention.
FIG. 3 is a longitudinal sectional view showing a developer supply nozzle used in the developing device.
FIG. 4 is a vertical sectional view showing a cleaning liquid supply nozzle used in the developing device.
FIG. 5 is an explanatory diagram showing a process of a developing process using the developing device.
FIG. 6 is an explanatory view showing a state of a cleaning step of the developing device.
FIG. 7 is a longitudinal sectional view showing a cleaning liquid supply nozzle used in a developing device according to a second embodiment of the present invention.
FIG. 8 is a longitudinal sectional view showing another cleaning liquid nozzle used in the developing device according to the second embodiment.
FIG. 9 is a longitudinal sectional view showing another cleaning liquid nozzle used in the developing device of the present invention.
FIG. 10 is an explanatory view showing another cleaning method of the developing device of the present invention.
FIG. 11 is a longitudinal sectional view showing another cleaning liquid nozzle used in the developing device of the present invention.
FIG. 12 is a perspective view showing an example of a coating apparatus incorporating the developing device according to the present invention.
FIG. 13 is a plan view illustrating an example of a coating apparatus incorporating the developing device according to the present invention.
FIG. 14 is a characteristic diagram showing an example performed to confirm the effect of the present invention.
FIG. 15 is a characteristic diagram illustrating an example performed to confirm the effects of the present invention.
FIG. 16 is an explanatory diagram showing a flow of a developing process.
FIG.
FIG. 8 is an explanatory diagram illustrating a process of a developing process when a conventional developing device is used.
[Explanation of symbols]
W wafer
2 Spin chuck
30 outer cup
31 Inner cup
4 Developer supply nozzle
40 outlet
44 Cleaning liquid supply unit
5 Cleaning liquid supply nozzle
50 outlet
54 Cleaning liquid supply section
6 control unit
70 air inlet
73 gas supply section
V1, V2, V3 valves

Claims (6)

In a developing device that applies a resist to the surface of the substrate and develops the exposed substrate,
A substrate holding unit for holding the substrate horizontally,
A developer supply nozzle for supplying a developer to the surface of the substrate held by the substrate holding unit;
A cleaning liquid supply nozzle for supplying a cleaning liquid to the surface of the substrate on which the developing liquid is applied, having a discharge port formed over a length substantially equal to or longer than the width of the effective area of the substrate; ,
The lower end of the discharge port is below the liquid level of the developing solution and the separation distance from the surface of the substrate is 0.4 mm or less.The cleaning liquid supply nozzle is positioned from one end of the substrate to the other end. And a moving mechanism for moving the developing device. In a developing device that applies a resist to the surface of the substrate and develops the exposed substrate,
A substrate holding unit for holding the substrate horizontally,
A developer supply nozzle for supplying a developer to the surface of the substrate held by the substrate holding unit;
A cleaning liquid supply nozzle for supplying a cleaning liquid to the surface of the substrate on which the developing liquid is applied, having a discharge port formed over a length substantially equal to or longer than the width of the effective area of the substrate; ,
A gas blowing port provided on a side surface portion on the traveling direction side of the cleaning liquid supply nozzle, and inclined forward.
A moving mechanism that moves the cleaning liquid supply nozzle from one end side to the other end side of the substrate at a height position where the lower end of the discharge port is lower than the liquid level of the developer. Developing device. The developing device according to claim 1, wherein the cleaning liquid supply nozzle has a plurality of discharge ports arranged in a traveling direction thereof. 4. The developing device according to claim 3, wherein each discharge port is provided with a flow rate adjusting unit. 5. The developing device according to claim 1, wherein the cleaning liquid is supplied after rotating the substrate coated with the developing liquid for a predetermined time. After cleaning is performed by moving the substrate from one end to the other end while discharging the cleaning liquid from the discharge port of the cleaning liquid supply nozzle, cleaning is performed by rotating the substrate while supplying the cleaning liquid to the center of the substrate. The developing device according to claim 1, wherein the developing is performed.

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