JP3090126B2 - Spin processing apparatus for glass substrate and spin processing method for glass substrate - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

TECHNICAL FIELD The present invention is related to <br/> to scan <br/> pins processing apparatus and spin-processing how the glass substrate for a glass substrate, in particular, to discharge the liquid medicine while rotating the substrate It is suitable for application to the above-described apparatus.

[0002]

2. Description of the Related Art In the field of so-called flat panel displays such as a liquid crystal display and a plasma display, the size of a glass substrate for manufacturing these panels is increasing in size for OA displays which are one of applied products. In keeping with the growing demand for, the size of the device has been steadily increasing, and it is now approaching the 1m square class.

[0003] With the increase in the size of the substrate, the size of the manufacturing apparatus is inevitably increased. In particular, in the case of wet processing equipment, the amount of so-called indirect materials, such as chemicals and water, continues to increase with the size of the equipment.
There is a need to reduce the amount of these chemicals and water used. In addition, there is also a demand for space-saving of one of the facilities that is increasing in size.

A so-called spin processing apparatus that performs processing while rotating a substrate in a single-wafer manner satisfies the above requirements. Such a spin processing apparatus has been used for applying a resist to a silicon (Si) wafer, developing the resist, or drying the resist in a semiconductor device manufacturing process. Furthermore, in the manufacturing process of a liquid crystal display, it is used for application of a resist or drying.

[0005] Among them, a spin processing apparatus used for wet processing is, as in a conventional wet processing apparatus, a method of sequentially transporting a substrate from a first processing tank to a second processing tank while immersing a substrate in a chemical solution. This solves the problem of the so-called in-line type flat-flow wet processing apparatus. That is, in the spin processing apparatus, since the number of chemical liquid ejection nozzles is small, the amount of chemical liquid used per substrate can be reduced, and the capacity of the chemical liquid tank for storing the chemical liquid can be reduced. Space can be saved. In addition, by using a plurality of cups for performing spin processing, that is, by making a so-called multi-cup, it is possible to reduce the tact time in the spin processing apparatus, and to operate one of the plurality of cups due to maintenance or the like. Even if it is in a stopped state, the other cups can be operated, so that the operation rate of the apparatus can be improved.

Further, when the spin processing apparatus is used for the drying process, there is an advantage that the amount of air used can be greatly reduced as compared with the conventional air knife drying.

However, when the spin processing apparatus having the above advantages is applied to wet processing of a large glass substrate, the following problem occurs.

That is, as shown in FIG. 6, when wet processing is performed using a conventional spin processing apparatus, a vacuum chuck is placed on a cup rotating table 102 provided at the center of a cup 101 whose upper part is opened. The substrate 103 is rotated while holding the substrate 103 by a mechanical chuck or the like, and a liquid is discharged onto the substrate 103 from a liquid discharge nozzle (not shown) to perform wet processing. In addition, in FIG.
Reference numeral 4 denotes a drain / exhaust line for exhausting the gas in the cup 101 and discharging the chemical solution and pure water removed from the substrate 103. The drain / exhaust line is a drain / drain line for draining the liquid in the middle. Exhaust line 10 for exhausting liquid line 104a
4b.

However, the rotation of the substrate 103 during such a wet process generates an air flow in the cup 101 and blows out in the circumferential direction. If the rotation speed of the substrate 103 is the same, the peripheral speed increases as the outer periphery of the substrate 103 increases, so that the speed of the airflow increases.

[0010] Then, such an air current in the cup 101 causes a chemical solution or moisture to scatter inside and outside the cup 101, and fine droplets such as a chemical solution, so-called mist, leak out of the cup 101. was there.

[0011] The chemical solution or moisture scattered inside the cup 101 collides against the side surface of the cup 101 and rebounds.
3 and causes stains and foreign matter on its surface. Further, the chemical liquid scattered outside the cup 101 may affect the human body as it is.

To solve such a problem, a method of providing a cover on the cup 101 for sealing, a method of strongly exhausting gas in the cup 101, and the like have been considered. However, the former method of sealing the cup 101 has a drawback that it is not possible to prevent splashing of a chemical solution or the like, and also has a drawback that washing and drying cannot be performed with the same cup. Further, the latter method of exhausting gas strongly has a disadvantage that the effect of preventing a chemical solution or the like from scattering outside the cup 101 is weak.

As a solution to these drawbacks, there has been devised a spin processing apparatus in which a dome-shaped windshield cover having an intake port on the ceiling is provided on the cup 101.

If wet processing is performed using such a spin processing apparatus, an airflow can be generated in the cup 101 downward from the air inlet at the ceiling of the windshield cover. Water rebound can be suppressed.

[0015]

However, as shown in FIG. 7, an arm (not shown) for taking in and out an arm (not shown) for discharging a chemical solution is further inserted into and out of a windshield cover 106 having an air inlet 105 on a ceiling portion. If the openings 107 and gaps (not shown) are present, when the number of rotations when rotating the substrate 103 is high, turbulence is generated at the arm openings 107, and airflow blows out therefrom. There was such a problem. In addition, the turbulent flow generated in the arm opening 107 causes foreign matter to adhere to the substrate 103.

Further, when the discharge of the chemical is performed with sufficient momentum, that is, when the discharge speed of the chemical is increased,
A large amount of splashes may occur and mist may leak to the outside of the device. Further, due to the re-adhesion of the mist to the substrate 103, even if the washing process of the substrate 103 is continuously performed after the treatment with the chemical solution, there remains a problem that the washing process is meaningless.

Accordingly, an object of the present invention is to perform spin processing while maintaining a high-quality state of a substrate, to ensure high safety, and to suppress the adhesion of foreign substances to the substrate. An object of the present invention is to provide a spin processing device that can perform the spin processing.

[0018]

[0019]

According to a first aspect of the present invention, there is provided a processing chamber having an open upper portion, a cover having an intake port provided on the processing chamber, and a processing chamber. Substrate rotation means for rotating a glass substrate provided in a room, at least one opening in the cover, and an airflow guide for directing airflow due to gas inside the cover toward the inside of the cover at an opening end of the opening. A spin processing apparatus for a glass substrate having a portion, wherein the exhaust amount of gas exhausted from the processing chamber is configured to be equal to or larger than the intake amount of gas exhausted from the intake port and the opening. Is what you do. According to a second aspect of the present invention, there is provided a spin processing method for a glass substrate, wherein the wet processing is performed while rotating the substrate in a processing chamber provided with a cover having an upper opening and at least one opening at an upper portion. At the opening end of the opening, the air flow due to the gas inside the cover
An airflow guide portion directed toward the inside of the cover is provided so that the amount of gas exhausted from the processing chamber is set to be equal to or more than the amount of gas intake from the intake port and the opening.

[0020] In inventions of this, typically, is provided with an exhaust amount control means for controlling the exhaust volume, the exhaust amount control means, the gas to be sucked from any opening provided in the cover The exhaust amount can be controlled according to the intake amount. Further, in the inventions of this, the opening is, for example a gap between the cover and the processing chamber is intended to include like.

[0021] In inventions of this, typically, such as the open end and the cover of the gap opening in the cover, the airflow guide portion for directing the air flow by the gas inside the cover to the inside of the cover is provided The airflow guide preferably has a flange-like portion facing the inside of the cover. The airflow guide preferably has a portion protruding toward the outside of the cover and a portion protruding toward the inside of the cover.

[0022] In inventions of this, typically, the cover first has an opening and a second opening is provided in the exhaust amount of the gas exhausted from the process chamber, is sucked from the first opening It is configured to be equal to or more than the sum of the intake amount of the gas and the intake amount of the gas sucked from the second opening. Further, in the inventions of this, preferably, has a plurality of liquid discharge means for discharging liquid to the substrate, a plurality of liquid discharge means is out capable constructed through the openings, respectively.

[0023] In inventions this typically has a liquid discharge means for discharging the liquid onto the substrate, the liquid discharge means is out capable constructed through one opening of the aperture. Further, in the inventions of this, if a second liquid discharge means for discharging a first liquid discharge means and pure water for discharging the chemical solution,
Typically, the cover is provided with an opening for taking in and out the first liquid discharging means and an opening for taking in and out the second liquid discharging means.

[0024] In inventions of this, the exhaust amount E in a spin processing apparatus (m ³ / min), since the reference velocity of the local exhaust is about 0.5 (m / s), preferably, from the opening The difference (EA) from the intake amount A (m ³ / min) of the gas to be inhaled is set so that EA ≧ 30S with respect to the total area S ( m ² ) of the opening including the gap. You.

[0025]

[0026]

[0027]

[0028]

[0029]

[0030] In the present invention, the spin processing equipment glass substrate, in order to improve the equipment operating rate, preferably, constitutes a process chamber a plurality mounted.

According to the spin processing apparatus for a glass substrate according to the first aspect of the present invention and the spin processing method for a glass substrate according to the second aspect of the present invention, the amount of gas exhausted from the processing chamber is as follows. However, since the air flow rate is set to be equal to or larger than the amount of gas suctioned from at least one opening provided in the cover on the processing chamber, a strong downward airflow can be generated in the processing chamber.

[0032]

[0033]

Embodiments of the present invention will be described below with reference to the drawings. In all the drawings of the following embodiments, the same or corresponding portions are denoted by the same reference numerals.

First, a spin processing device according to a first embodiment of the present invention will be described. FIG. 1 shows a spin processing apparatus according to the first embodiment.

As shown in FIG. 1, the spin processing apparatus according to the first embodiment comprises a spin cup 1, a rotary table 2 in a cup, an arm 3, and a windshield cover 4.

The spin cup 1 is for collecting and discarding a chemical solution or pure water discharged to the substrate 5 and removed from the substrate 5. The side wall surface of the spin cup 1 is composed of a cylindrical portion and a portion protruding inward at an upper portion thereof, and the upper portion is open. Here, the radius of the opening formed by the upper end of the protruding portion is, for example, 45 cm. The depth of the spin cup 1 is, for example, 40 cm. Further, an exhaust port 6 is provided in a peripheral portion of the bottom surface of the spin cup 1. The radius of the exhaust port 6 is, for example, 4 cm. The exhaust port 6 also serves as a drain for chemicals and pure water, and a drain / exhaust line 7 is connected to the exhaust port 6. The drain / exhaust line 7 branches into a drain line 7a and an exhaust line 7b on the way. The drain line 7a is connected to the substrate 5 in the spin cup 1.
The exhaust line 7b is for exhausting the gas in the spin cup 1 to the outside, for discarding the chemical solution or pure water removed from above. The exhaust line 7b is provided with a displacement controller (not shown), so that the displacement of gas exhausted through the exhaust line 7b can be adjusted.

The in-cup rotating table 2 is provided with its axis located substantially at the center of the spin cup 1, and is configured to be rotatable around the axis. Further, a chuck portion such as a vacuum chuck or a mechanical chuck is provided on the upper portion of the in-cup rotating table 2 so that the chuck portion can hold a substrate 5 such as a glass substrate or a semiconductor wafer. Has become. Thus, the in-cup rotating table 2 can be rotated around the normal direction of the center of the surface thereof while holding the substrate 5.

The arm 3 is provided with chemical liquid discharge nozzles 3a, 3b, 3c for discharging a chemical liquid onto the substrate 5, and a pure water discharge nozzle (not shown) for discharging pure water. Is provided. The arm 3 is provided through an arm opening provided in the windshield cover 4 described later.
The windshield cover 4 is configured to be able to be taken in and out.
Then, when the arm 3 is inserted into the windshield cover 4,
It can be located above the in-cup turntable 2 and the substrate 5. At this time, for example, the chemical liquid discharge nozzle 3a at the tip of the arm 3 is located substantially above the center of the substrate 5, and the chemical liquid discharge nozzle 3c is positioned above the inside of the outer peripheral portion of the substrate 5. The discharge nozzle 3b is provided at substantially the middle of the arm 3 at the position between the liquid discharge nozzle 3a and the liquid discharge nozzle 3c.

The windshield cover 4 has a dome shape and is provided so as to cover the spin cup 1. The windshield cover 4 is for preventing mist or the like from scattering to the outside. Here, the radius of curvature of the windshield cover 4 is, for example, about 50 cm. An intake port 8 is provided at the ceiling of the windshield cover 4 so that external gas can be taken in. The radius of the inlet 8 is, for example, about 2 cm. Further, an arm opening 9 for inserting and removing the arm 3 described above is provided in the inclined spherical surface portion of the windshield cover 4. Here, the arm opening 9 will be specifically described with reference to FIG.

That is, the arm opening 9 is provided on the inclined spherical surface of the windshield cover 4 as shown in FIG. 2A. The opening area of the arm opening 9 is, for example, 500.
cm ² . Also, at the opening end of the arm opening 9,
An airflow guide is provided. That is, as shown in FIG. 2B, the cross-sectional shape of the arm opening 9 along the vertical plane (BB line) of the airflow guide portion is such that the upper end and the lower end of the opening face the inside of the windshield cover 4, respectively. For example, it protrudes in a brim shape. Also, as shown in FIG. 2C,
Horizontal plane (CC line) of the airflow guide section of the arm opening 9
Is formed such that one open end protrudes toward the inside of the windshield cover 4 and the other open end protrudes toward the outside of the windshield cover 4.
In addition, when there is a gap 4a as shown in FIG. 2D at a connection portion between the spin cup 1 and the windshield cover 4, an airflow guide portion is also provided at the gap 4a.

If the air flow guide is not provided in the arm opening 9, the air flow around the arm opening 9 flows as if slightly bulging from the arm opening 9, and again the windshield cover 4. However, since it is not forcibly returned, there is a possibility that airflow is blown out. On the other hand, the opening end of the arm opening 9 is shown in FIG.
B and the airflow guide section having a cross-sectional shape as shown in FIG. 2C, when an airflow is generated in the windshield cover 4, the airflow around the arm opening 9 is forcibly reduced. (FIG. 2B, FIG. 2C, arrow direction). In addition, by providing the airflow guide portion also in the gap 4a, the airflow can be directed below the spin cup 1 (in the direction of the arrow in FIG. 2D). In addition, such an airflow guide section can be provided at the opening end of the intake port 8 as necessary.

Next, the steps of light etching using the spin processing apparatus configured as described above will be described.

First, the vertical and horizontal dimensions are, for example, 550 mm × 6.
An amorphous silicon (amorphous Si, a-Si) film (not shown) is formed on a substrate 5 made of a rectangular glass substrate having a thickness of 50 mm and a thickness of 0.7 mm, for example, by a plasma chemical vapor deposition method. Film. The thickness of the a-Si film is, for example, 50 nm. Thereafter, the substrate 5 is left for two days. Thus, a natural oxide film (not shown) is formed on the surface of the a-Si film.

Next, the setting of the exhaust amount E _out to be exhausted through the exhaust line 7b. That is, as shown in FIG. 1, the substrate 5 is placed on a rotary table 2 in a cup of a spin processing apparatus.
Place on top. Next, the in-cup rotating table 2 is rotated around its axis at a rotation speed of, for example, 1200 rpm, and the substrate 5 is rotated at a similar rotation speed. Due to the rotation of the substrate 5, an air current is generated in the spin cup 1, and the inside of the substrate 5 becomes a negative pressure, so that an external gas is sucked through the air inlet 8 and the arm opening 9. At this time, the sum (A ₁ + A ₂ ) of the intake air amount A ₁ through the intake port 8 and the intake air amount A ₂ through the arm opening 9 is 20 m ³ /
min. Therefore, in the first embodiment, based on the value of the intake air amount A ₁ + A ₂ , the exhaust amount E of the gas exhausted through the exhaust line 7b is determined.
_out is taken into the intake air amount A ₁ by a displacement controller (not shown).
+ A ₂ or more, for example, 25 m ³ / min.
Thereafter, the rotation of the in-cup turntable 2 and the substrate 5 is stopped. The measurement of the intake air amounts A ₁ and A ₂ and the setting of the exhaust air amount E _out may be performed using, for example, a dummy substrate.

Next, light etching of the natural oxide film on the surface of the a-Si film on the substrate 5 is performed. That is, while the substrate 5 is placed on the in-cup rotating table 2, the in-cup rotating table 2 and the substrate 5 are rotated at a rotation speed of, for example, 80 rpm. On the other hand, the arm 3 is inserted through the arm opening 9 so that the direction of the arm 3 faces the center of the spin cup 1. After the rotation of the substrate 5 is stabilized, dilute hydrofluoric acid (HF) having a concentration of 2% is discharged onto the substrate 5 from the chemical liquid discharge nozzles 3a, 3b, and 3c through the inside of the arm 3. The discharge of the diluted hydrofluoric acid is performed, for example, for 40 seconds. By the discharge of the diluted hydrofluoric acid, the diluted hydrofluoric acid reacts with the natural oxide film on the surface of the a-Si film, and the rotation of the substrate 5 removes the diluted hydrofluoric acid from above the substrate 5 to remove the natural oxide film. .

Subsequently, the substrate 5 is rinsed with pure water by discharging pure water from a pure water discharge nozzle (not shown) provided on the arm 3. This pure water rinse is for example about 60
Perform for seconds.

After the pure water rinsing is completed, the rotational speed of the rotary table 2 in the cup and the substrate 5 is set to, for example, 1000 rpm.
, And this state is maintained, for example, for 30 seconds. Thereby, the pure water is removed from the substrate 5 and dried.

Next, after the rotation table 2 in the cup and the substrate 5 are stopped, the substrate 5 is carried out of the spin processing apparatus by a predetermined carry-out device (not shown), and the natural oxidation of the surface of the a-Si film is performed. The step of removing the film is completed.

Before removing the natural oxide film as described above, a pH test paper is stuck on the windshield cover 4 around the opening 9 for the arm, and the inside of the spin cup 1 and the windshield cover 4 are removed during the process. When airflow is blown out through the arm opening 9, a reaction is made to be able to recognize that airflow has been blown out. After the step of removing the natural oxide film is completed,
When the test paper was inspected, no change was observed, and it was confirmed that no airflow was blown out. Needless to say, there was no balloon that could be detected by humans.

Before and after the above-described step of removing the natural oxide film, the number of particles on the substrate 5 was measured by a foreign matter inspection device.
0, and the number of particles after the process was about 260. That is, almost no increase in particles was observed. Therefore, when light etching is performed using the spin processing apparatus according to the first embodiment, it can be determined that there is almost no adhesion of foreign matter.

For comparison, the exhaust amount E _{out is set} to the intake amount (the substrate 5 is set to 1200 rpm) in the first embodiment.
10m less than 20m ³ / min) when rotated at m
^{At 3} / min, the surface of the substrate 5 dried and rinsed with pure water in the same manner as described above was inspected for foreign substances and the number of particles was measured. It was confirmed that the number increased by 160 pieces.

As described above, according to the first embodiment, the exhaust amount E _out of the gas exhausted from the inside of the spin cup 1 of the spin processing device is reduced by the intake port 8 and the arm provided on the windshield cover 4. By setting the air intake amount A ₁ + A ₂ or more to be taken in through the opening 9, it is possible to prevent the chemical solution from being scattered due to the air current generated by the rotation of the substrate 5, and to prevent the chemical odor from flowing out of the spin cup 1. Mist leakage can be prevented. In addition, since the air flow generated by the rotation of the substrate 5 can be directed to the exhaust port 6 without stagnation, the air flow is
It can be prevented from hitting and bouncing. Accordingly, reattachment of foreign matter to the substrate 5 can be suppressed, and a wet process, a drying process, or the like can be performed while maintaining the substrate 5 in a high quality state.

Next, the step of removing the resist pattern according to the second embodiment of the present invention will be described. In the step of removing the resist pattern according to the second embodiment, the same spin processing apparatus as in the first embodiment is used.

First, a resist pattern is formed on the substrate 5. After that, similarly to the first embodiment, the displacement E _out from the spin cup 1 in the spin processing device is
It is set to be equal to or more than the intake amount A ₁ + A _{2 of the} gas sucked through the intake port 8 and the arm opening 9. Thereafter, the arm 3 is inserted through the arm opening 9 and, for example, a thinner is discharged onto the substrate 5 from the chemical liquid discharge nozzles 3a, 3b, 3c. Thereby, the resist pattern is peeled off. Next, in the same manner as in the first embodiment, the substrate 5 is rinsed with pure water and dried, and then the substrate 5 is carried out of the spin processing apparatus to complete the step of removing the resist pattern.

During the process of stripping the resist pattern according to the second embodiment, no thinner smell was detected outside the spin processing apparatus, and no leakage was confirmed.

According to the second embodiment, the same effects as those of the first embodiment can be obtained.

Next, a wet processing apparatus according to a third embodiment of the present invention will be described. FIG. 3 shows a wet processing apparatus according to the third embodiment.

The wet processing apparatus according to the third embodiment comprises a new liquid tank 11, a circulating liquid tank 12, and a wet processing section 13, as shown in FIG.
The new liquid tank 11 is for storing a chemical liquid that has never been used in wet processing, that is, a so-called unused chemical liquid. The circulating liquid tank 12 is for storing a chemical used at least once in the wet processing in the wet processing apparatus, that is, a so-called circulating chemical. The wet processing unit 13 includes:
This is for performing a wet process such as stripping of a resist pattern on the substrate 14.

One end of a new liquid line 15 is connected to the new liquid tank 11, and a pump 16 is provided in the middle of the new liquid line 15. The other end of the new liquid line 15 is connected to a new liquid line (not shown) in the chemical liquid line 17, whereby the new liquid tank 11 is connected to the wet processing section 1 through the new liquid line 15 and the chemical liquid line 17.
3 is connected to a chemical solution discharge section described later. The pump 16 supplies the unused chemical liquid stored in the new liquid tank 11 to the chemical liquid discharge unit in the wet processing unit 13 through the new liquid line 15 and the chemical liquid line 17 sequentially.

The circulating fluid tank 12 has a circulating fluid line 18
One end of the circulating fluid line 18 is provided with a pump 19. The other end of the circulating fluid line 18 is connected to a circulating chemical solution line (not shown) in the chemical solution line 17, whereby the circulating fluid tank 12 passes through the circulating fluid line 18 and the chemical solution line 17 in order, and is wet-type. It is connected to the chemical solution discharge unit in the processing unit 13. The pump 19 passes the circulating chemical in the circulating liquid tank 12 through the circulating liquid line 18 and the chemical liquid line 17 sequentially,
This is for supplying to the chemical solution discharge section 23. Further, a collection line 20 is connected to the circulating liquid tank 12,
The chemical liquid collected in the wet processing unit 13 is supplied to the circulating liquid tank 12 through the collection line 20 and stored therein.

The wet processing section 13 includes a spin cup 21, a windshield cover 22, a chemical solution discharge section 23, a rotary table 24 in the cup, and a pure water discharge section (not shown).

The spin cup 21 is for collecting or discarding the chemical solution discharged onto the substrate 14 and removed from the substrate 14. The bottom surface of the spin cup 21 is higher at the center and lower at the periphery than at the center. As a result, the chemical liquid that has dropped onto the bottom surface of the spin cup 21 flows radially from the central part toward the peripheral part.

The side wall surface of the spin cup 21 is composed of a cylindrical portion and a portion protruding toward the inside of the upper portion, and the upper portion is open. Here, the radius of the opening formed by the upper end of the protruding portion is, for example, 50 cm. In addition, spin cup 2
Further, a cylindrical side wall 25 is provided on the inner peripheral portion of the side wall surface of the spin cup 1. The outer peripheral surface of the side wall 25 and the inner peripheral surface of the side wall surface of the spin cup 1 constitute a chemical solution collecting section 26. Have been.

In the chemical liquid collecting section 26, a separation hole 27 is formed by the upper end of the side wall surface of the spin cup 21 and the upper end of the side wall 25. The recovery line 20 is connected to the bottom surface of the chemical liquid recovery unit 26, and is configured so that the chemical liquid that has entered the chemical liquid recovery unit 26 through the separation hole 27 can be supplied to the circulating liquid tank 12.

Further, the side wall 2 is formed around the spin cup 21.
A drain / exhaust line 28 is connected to the bottom surface inside 5. Here, the radius of the opening at the connection between the bottom surface of the spin cup 21 and the drain / exhaust line 28 is, for example, 3 cm. The drain / exhaust line 28 is for discarding the chemical solution that has fallen inside the side wall 25 without entering the chemical solution recovery unit 26 and for exhausting the gas in the spin cup 21. And a drain line and an exhaust line (both not shown). Of these, the exhaust line is provided with a displacement controller (not shown) so that the displacement through the exhaust line can be regulated. In addition, it is desirable that the exhaust amount is set to be equal to or more than the intake amount of the gas that is sucked from all the openings provided in the windshield cover 22, and is set to, for example, 25 m ³ / min in the ^third embodiment. .

The windshield cover 22 has a dome shape and is provided so as to cover the spin cup 1. The windshield cover 22 is for preventing mist from scattering outside the apparatus. Here, the windshield cover 22
Has a radius of curvature of, for example, 60 cm. An intake port 29 is provided on the ceiling of the windshield cover 22 so that external gas can be taken in. Here, the radius of the intake port 29 is, for example, 2 cm. In addition, the liquid ejection section 2 is provided on the inclined spherical surface of the windshield cover 4.
3, an opening 30 (not shown) for a pure water arm is provided for opening and closing a chemical solution arm for inserting and removing an arm to be described later. ing.

The chemical solution discharging section 23 is for discharging a chemical solution onto the substrate 14. The chemical solution discharge section 23 is provided with a roof-shaped bulk 31. Here, the chemical solution discharge unit 23 provided with the bulk 31 will be described with reference to FIG.

That is, as shown in FIG. 4, the chemical solution discharging section 23 includes an arm 32, chemical solution discharging nozzles 33a and 33b,
33c and 33d.

The roof-shaped bulk 31 is provided so as to cover at least the upper part of the chemical solution discharge nozzles 33 a to 33 d and to cover the arm 32. The bulk 31 is inclined on both sides of the arm 32 as a boundary. The surface of the bulk 31 is coated with a resin having at least a property of repelling a chemical solution. Here, as an example of the dimensions of the bulk 31, the nozzle arrangement length L is 50 cm, the tilt length l ₁ is 10 cm, and the tilt angle θ ₁ is 45 °.

The arm 32 is fixed to the drive unit 34 and is configured to be movable at least up, down, up and down.
The chemical liquid line 17 is provided inside the arm 32 and the drive unit 34.

The chemical liquid discharge nozzles 33 a to 33 d are for discharging, for example, a circulating chemical liquid supplied through the drive section 34 and the inside of the arm 32 toward the substrate 14, and are provided sequentially along the longitudinal direction of the arm 32. Have been. The arm 32 is further provided with a chemical discharge nozzle (not shown) for discharging an unused chemical liquid, similarly to the above-described chemical discharge nozzles 33a to 33d.

Further, the pure water discharge section not shown has the same structure as the above-mentioned chemical liquid discharge section 23.

Further, as shown in FIG. 3, the in-cup rotary table 24 is the same as in the first embodiment, and a description thereof will be omitted.

Next, a description will be given of a process of stripping a resist pattern using the wet processing apparatus configured as described above.

First, the vertical and horizontal dimensions are, for example, 550 mm × 6.
A resist pattern (not shown) having a predetermined shape is formed on a substrate 14 having a thickness of 50 mm and a thickness of, for example, 0.7 mm. The thickness of this resist pattern is, for example, 1.4 μm.
Thereafter, for testing the peeling ability, a surface hardened layer is formed on the substrate 14 by performing ion doping on the substrate 14 using a phosphine (PH ₃ ) gas. In addition,
The chemical used for stripping the resist pattern in the third embodiment is a stripper having a use temperature of, for example, 40 ° C. and a viscosity of, for example, 6 cp.

Next, as shown in FIG. 3, the substrate 14 is placed on the rotary table 24 in the cup. Thereafter, the in-cup rotating table 24 is moved around its axis by, for example, 80 r.
The substrate 14 is rotated at a similar rotation speed by rotating the substrate 14 at a rotation speed of pm. On the other hand, after the arm 32 is inserted through the arm opening 30 so that the tip thereof is located substantially above the center of the substrate 14, the lower end of the roof-shaped bulk 31 is set to, for example, 2 cm from the surface of the substrate 14. Lower until height.

Next, after the rotation of the in-cup rotating table 24 is stabilized, the pump 19 is operated to remove the stripping liquid stored in the circulating liquid tank 12 and used at least once in the step of stripping the resist pattern. (Hereinafter referred to as “circulating stripping solution”) to a circulating solution line 18 and a chemical solution line 17.
Are sequentially supplied to the chemical liquid discharge unit 23 and discharged toward the substrate 14. Here, the pressure at the time of discharging the circulating stripping liquid is, for example, about 7.8 × 10 ⁴ Pa (0.8 kgw / cm ² ), and the discharging time is, for example, 80 seconds.

Subsequently, by operating the pump 16, a stripping solution (hereinafter, referred to as a stripping solution) which has never been used in the step of stripping the resist pattern stored in the new solution tank 11.
Unused stripping solution) is replaced with a new solution line 15 and a chemical solution line 1.
7 are sequentially supplied to the chemical liquid discharge section 23 and discharged toward the substrate 14. Here, the pressure at the time of discharging the unused stripper is, for example, about 2.9 × 10 ⁴ Pa (0.3 kgw / c).
m ² ), and the ejection time is, for example, 20 seconds.

After the discharge of the unused stripping liquid is completed, the arm 32 is pulled out of the windshield cover 22 through the arm opening 30 and an arm for discharging pure water (not shown).
Is inserted so that its tip is located substantially above the center of the substrate 14. Next, pure water is supplied to the pure water discharge unit and discharged toward the substrate 14 to rinse the substrate 14 with pure water. This pure water rinsing is performed, for example, for about 60 seconds.

After the pure water rinsing is completed, the rotational speed of the rotary table 24 in the cup and the substrate 14 is increased to, for example, 1000 rpm.
pm, and this state is maintained, for example, for about 30 seconds. Thereby, the pure water is removed from the substrate 14 and dried. Thereafter, the rotary table 24 in the cup and the substrate 1
4 is stopped.

Thereafter, the substrate 14 is carried out of the wet processing apparatus by a predetermined carry-out device (not shown), and the step of stripping the resist pattern is completed.

Here, for comparison, the discharge pressure of the circulating stripping solution was set to 7.8 × 10 ⁴ Pa (0.8 kgw / c).
m ² ) to 2.9 × 10 ⁴ Pa (0.3 kgw
/ Cm ² ), and the other conditions are the same as in the above-described resist pattern stripping process.
The resist pattern on No. 4 was peeled off. Then, the substrate 14 subjected to the peeling at a low discharge pressure and the substrate 14 subjected to the peeling at a high pressure were respectively inspected by a microscope. Although the remaining resist was seen at the pattern edge, the substrate 14 was peeled off at a high discharge pressure.
No resist residue was found on the top.

Further, when a foreign substance inspection was performed on the substrate 14 which was peeled at a high discharge pressure, there were about 150 foreign substances having a size of 1 μm or more, and no increase in foreign substances due to reattachment of mist was observed. Was. Also, when the inside of the roof-shaped bulk 31 provided on the arm 32 was observed, almost no peeling liquid remained. Further, it was confirmed that the mist was not leaked to the outside of the wet processing apparatus and the wet processing was performed safely.

Therefore, when the resist pattern is stripped using the wet processing apparatus according to the third embodiment, even if the discharge pressure of the stripping liquid is increased, foreign substances due to mist re-adhesion to the surface of the substrate 14 increase. It was confirmed that the resist pattern could be effectively removed without performing the above.

As described above, according to the third embodiment, since the roof 32 is provided on the arm 32 of the chemical solution discharge section 23, the circulating stripping solution in which the resist is dissolved can be used. By increasing the discharge pressure, the substrate 1
4, the roof-shaped bulk 31 receives and absorbs the circulating peeling liquid rebounding from the substrate 14.
The mist can be prevented from re-adhering to the surface 4 and foreign substances from adhering. In this way, the discharge pressure of the stripper is increased,
Even if the discharge speed is increased, generation of mist can be suppressed, so that mist of the stripping liquid does not leak outside the wet processing apparatus, and safety during operation of the apparatus is improved. Can be. In addition, roof-like bulk 3
Since at least the surface of 1 is coated with a material that repels the stripping liquid, the stripping liquid does not drop as droplets when the arm 32 is moved or vibrated, so that it is not stained on the surface of the substrate 14. Can be prevented from occurring, and the substrate 14 can be kept in a high quality state. Further, after the circulating stripping solution is discharged at a high pressure, the unused stripping solution is continuously discharged, and the pure water rinsing is performed, so that the resist dissolved in the portion of the substrate 14 where the stripping solution has been cut is solidified. Can be prevented, and generation of a stain on the surface of the substrate 14 can be prevented, so that the substrate 14 can be kept in a higher quality state.

Next, a fourth embodiment of the present invention will be described. In the wet processing apparatus according to the fourth embodiment, unlike the third embodiment, as shown in FIG.
Conical bulges 35a, 35b, 35c, 35d are individually provided to the chemical liquid discharge nozzles 33a to 33d of the arm 32, respectively.
Is provided. Each of these conical bulks 35a to 35d is, for example, Teflon (polytetrafluoroethylene).
Consists of Here, as an example of the dimensions of the bulks 35a to 35d, the inclination angle θ ₂ is 45 ° and the inclination length l ₂ is 10c.
m and thickness 1 mm. For other things,
Since the third embodiment is the same as the first embodiment, the description is omitted.

When the resist pattern on the substrate 14 was peeled off using the wet processing apparatus according to the fourth embodiment in the same manner as in the third embodiment, no resist residue on the substrate 14 was confirmed. No increase in foreign matter due to mist re-adhesion was observed.

According to the fourth embodiment, the same effects as in the third embodiment can be obtained.

Although the embodiments of the present invention have been specifically described above, the present invention is not limited to the above embodiments, and various modifications based on the technical concept of the present invention are possible.

For example, the numerical values and materials described in the above embodiments are merely examples, and different numerical values and materials may be used as needed.

Further, for example, in the first embodiment described above, the vertical cross-sectional shape of the airflow guide portion of the arm opening 9 is formed into a brim shape facing the inside of the windshield cover 4. The shape is not necessarily limited to the above-mentioned shape as long as the inside airflow is directed to the inside. For example, the vertical cross-sectional shape of the airflow guide portion may be a curved shape without corners.

Further, for example, in the third embodiment described above, the discharge of the stripping liquid may be so-called bubble jet injection using high-pressure air. Further, for example, in the third embodiment, the wet processing apparatus according to the present invention is applied to the stripping of the resist pattern. However, the wet processing apparatus can be applied to the development processing of a color resist or the like.

Further, for example, in the above-described first to fourth embodiments, the rotary tables 2 and 24 in the cup are further provided.
A chemical solution line is provided in the axis of
A chemical solution discharge nozzle may be provided on the side, and a chemical solution such as a stripping solution may be discharged from the chemical solution discharge nozzle to the back surfaces of the substrates 5 and 14. Further, the rotary table 2 in the cup,
A pure water line is provided inside the shaft of 24, a pure water discharge nozzle is provided on the substrate 5 and 14 side of the pure water line, and pure water is discharged from the pure water discharge nozzle to the back surface of the substrates 5 and 14 to form a back surface. May be performed.

[0094]

As described above, according to the present invention, moths due to the inventions
Spin processing apparatus for glass substrate and spin processing of glass substrate
According to the method , the amount of exhaust from the processing chamber is set to be equal to or more than the amount of intake air from the opening provided in at least one of the covers, so that high safety is ensured when performing the spin processing of the substrate. In addition, spin processing can be performed while maintaining the substrate in a high-quality state, and adhesion of foreign substances to the substrate can be suppressed.

[0095]

[Brief description of the drawings]

FIG. 1 is a schematic diagram illustrating a spin processing device according to a first embodiment of the present invention.

FIG. 2 is a perspective view and a sectional view showing a windshield cover according to the first embodiment of the present invention.

FIG. 3 is a schematic diagram illustrating a wet processing apparatus according to a third embodiment of the present invention.

FIG. 4 is a perspective view showing a chemical solution ejection section provided with a cage according to a third embodiment of the present invention.

FIG. 5 is a perspective view showing a chemical solution ejection section provided with a cage according to a fourth embodiment of the present invention.

FIG. 6 is a schematic diagram for explaining a problem of a conventional spin processing device.

FIG. 7 is a schematic diagram for explaining a problem of a conventional spin processing device.

[Explanation of symbols]

1, 21: Spin cup, 2, 24: Rotating table in cup, 4, 22: Windshield cover, 4a ...
Gap 5, 14, ... substrate, 7, 28 ... drain / exhaust line, 7a ... drain line, 7b ... exhaust line, 8, 29 ... intake port, 31, 35a, 35b, 3
5c, 35d ... bulk

────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-1-151197 (JP, A) JP-A-3-249997 (JP, A) JP-A-63-141314 (JP, A) JP-A-5 146736 (JP, A) JP-A-8-71484 (JP, A) JP-A-63-72373 (JP, A) JP-A-64-39023 (JP, A) JP-A-61-156231 (JP, U) Hira 4-130429 (JP, U) (58) Field surveyed (Int. Cl. ⁷ , DB name) H01L 21/027 B05C 11/08 G02F 1/13 101 G02F 1/1333 500

Claims (17)

(57) [Claims] A processing chamber having an upper opening, a cover having an air inlet provided on the processing chamber, and a substrate rotating means provided in the processing chamber for rotating a glass substrate; A spin processing apparatus for a glass substrate, wherein at least one opening is provided in the cover, and an air flow guide portion that directs an air flow due to gas inside the cover toward the inside of the cover at an opening end of the opening. A spin processing apparatus for a glass substrate, wherein an amount of gas exhausted from a chamber is equal to or greater than an amount of gas intake from the inlet and the opening. 2. An exhaust amount control means for controlling the exhaust amount, wherein the exhaust amount control means is configured to control the exhaust amount according to the intake amount. 2. The spin processing apparatus for glass substrates according to 1. 3. The spin processing apparatus for a glass substrate according to claim 1, wherein the airflow guide section has a brim-shaped portion facing the inside of the cover. 4. The spin processing for a glass substrate according to claim 1, wherein the airflow guide portion has a portion protruding toward the outside of the cover and a portion protruding toward the inside of the cover. apparatus. 5. The liquid discharging apparatus according to claim 1, further comprising liquid discharging means for discharging a liquid to said substrate, wherein said liquid discharging means is configured to be able to be taken in and out through one of said openings. Spin processing equipment for glass substrates. 6. A first opening and a second opening are provided in the cover, and the amount of gas exhausted from the processing chamber is equal to the amount of gas intake from the first opening. The spin processing apparatus for a glass substrate according to claim 1, wherein the suction amount is equal to or more than a total suction amount of the gas suctioned from the second opening. 7. The glass substrate according to claim 1, further comprising a plurality of liquid discharging means for discharging liquid to the substrate, wherein each of the plurality of liquid discharging means can be put in and out through the opening. For spin processing equipment. 8. The spin processing apparatus for a glass substrate according to claim 1, wherein the glass substrate is a large glass substrate. 9. The upper part is open, and at least one part is formed on the upper part.
In a processing chamber provided with a cover having an opening,
Glass substrate that performs wet processing while rotating the substrate
In the method of spinning a plate,At the opening end of the opening, the air due to the gas inside the cover
An airflow guide portion for directing the flow toward the inside of the cover is provided,  The amount of gas exhausted from the processing chamber is determined by the
And the amount of gas suctioned from the opening
Of spinning glass substrates characterized by the following:
Law. 10. The spin processing method for a glass substrate according to claim 9, wherein the exhaust amount is controlled according to the intake amount. 11. The air flow guide portion has a flange-shaped portion facing the inside of the cover, and the air flow is directed to the inside of the cover by the flange-shaped portion. 10. The method for spin treatment of a glass substrate according to item 9. 12. The airflow guide portion has a portion protruding toward the outside of the cover and a portion protruding toward the inside of the cover, and the airflow guide portion directs the airflow to the inside of the cover. The method for spin processing a glass substrate according to claim 9, wherein: 13. Discharging the liquid to the substrate using liquid discharging means configured to be able to be taken in and out through one of the openings and configured to be capable of discharging the liquid to the substrate. 10. The spin processing method for a glass substrate according to claim 9, wherein the wet processing is performed by: 14. At least first, the first chemical liquid used at least once in the wet processing is discharged to the substrate by using the liquid discharging means to perform the wet processing, and at least lastly, the liquid discharging means is used. 14. The spin processing method for a glass substrate according to claim 13, wherein the second chemical solution that has never been used in the wet processing is discharged to the substrate to perform the wet processing. 15. A first opening and a second opening are provided in the cover, and an amount of gas exhausted from the processing chamber is determined by an amount of gas intake from the first opening. 10. The spin processing method for a glass substrate according to claim 9, wherein the suction amount is equal to or more than a total suction amount of the gas suctioned from the second opening. 16. The wet processing is performed by discharging the liquid to the substrate by using a plurality of liquid discharging means, each of which is configured to be able to be taken in and out through the opening and capable of discharging the liquid to the substrate. The spin processing method for a glass substrate according to claim 9, wherein the method is performed. 17. The method according to claim 9, wherein the glass substrate is a large-sized glass substrate.