JP2002124508A - Spin treating apparatus for substrates - Google Patents

Abstract

PROBLEM TO BE SOLVED: To accelerate water drops from moving at the peripheral edge of a substrate to reliably remove the remaining waterdrops from the peripheral edge of the substrate. SOLUTION: Gas is blow on the peripheral edge 5c of a square substrate 5 from a waterdrop scatterer S1, thereby scattering off the waterdrops from the peripheral edge 5c of the substrate 5 due to its gas pressure high enough against the adhesion of the waterdrops remaining on the peripheral edge 5c of the substrate 5.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus, and more particularly to a substrate spin processing apparatus for removing a liquid adhering to a substrate surface by centrifugal force and drying the substrate surface.

[0002]

2. Description of the Related Art For example, in a situation where a liquid crystal panel is becoming higher in definition and a low-temperature polysilicon TFT is being developed, a liquid crystal panel substrate cleaning technique is very important for ensuring product reliability and yield. It has become.

In cleaning a liquid crystal panel substrate, for example,
Ammonia peroxide (NH_FourOH + H_TwoO_Two+ H_TwoO) Chemical solution
Organic substances, for example, hydrochloric acid / hydrogen peroxide (HCl + H_TwoO_Two
+ H _TwoCleaning of metal contamination by the chemical solution of O), for example, buff
Oxidation of light hydrofluoric acid by light etching with chemical solution
The film is removed, and a rinsing treatment (chemical
Liquid washing) is generally performed.

Further, the mainstream of the cleaning apparatus is a batch type in which a substrate is immersed in a processing tank, and a flat-flow system is also mainstream when a single-wafer type is adopted.

However, recently, there is a problem that the size of the cleaning device is increased (increase in footprint) due to the enlargement of the substrate, and there is a problem such as contamination from the back surface of the substrate to the surface of the substrate. .

FIG. 4 shows a conventional single-wafer spin cleaning apparatus taking a rectangular substrate as an example. Single wafer spin cleaning apparatus 1 shown in FIG.
Is equipped with an alkali-based chemical solution chamber 2, an acid-based chemical solution chamber 3, and a rinsing / spin drying chamber 4 for performing pure water rinsing and spin drying.

The rectangular substrate 5 includes chambers 2, 3 and 4
The peripheral end is held by chuck pins 18 of the substrate chuck 7 installed therein, and the substrate chuck 7 is rotated about a shaft 47 to apply a centrifugal force.

In the alkaline chemical solution chamber 2,
For example, a chemical liquid nozzle 8 capable of discharging a chemical liquid of ammonia peroxide
And a rinse nozzle 9 capable of discharging pure water are installed so as to face the front and back surfaces of the rectangular substrate 5.

In the acid-based chemical solution chamber 3, a chemical solution nozzle 11 capable of discharging a chemical solution of, for example, hydrochloric acid-hydrogen peroxide, and a chemical solution nozzle 1 capable of discharging a chemical solution of, for example, buffered hydrofluoric acid are provided.
2 and a rinse nozzle 13 capable of discharging pure water are installed so as to face the front and back surfaces of the rectangular substrate 5.

The rinsing / spin drying chamber 4
Inside, a rinse nozzle 14 capable of discharging pure water for performing a final rinse is installed so as to face the front and back surfaces of the rectangular substrate 5.

In FIG. 4, to clean the substrate 5, the rectangular substrate 5 is sequentially transported into each of the alkali-based, acid-based, and rinsing-drying chambers 2, 3, and 4 for cleaning. In the alkali-based and acid-based chambers 2 and 3, the peripheral edge of the rectangular substrate 5 is held by the chuck pins 18 of the substrate chuck 7, and is rotated at, for example, about 200 rpm toward the front and back surfaces of the rectangular substrate 5. Cleaning is performed by discharging the chemical solution, and in the rinse / spin drying system chamber 4, the substrate is finally dried by rinsing with pure water and spinning off.

As shown in FIG. 5, the substrate chuck 7 has a chuck pin 18 for holding a peripheral end of the rectangular substrate 5 at a tip end of each arm 17 extending radially from the chuck base 16.
Is provided. A plurality of chuck pins 18 are provided, and in the example shown in FIG. 5, the chuck pins 18 are provided at six positions.

As shown in FIG. 6, the chuck pin 18 has a horizontal surface 20 for receiving the back surface of the substrate on the portion holding the rectangular substrate 5.
And a vertical surface 21 for receiving an end surface of the substrate. The horizontal surface 20 is provided with a projection 22 on the horizontal surface 20 so as to support the back surface of the rectangular substrate 5 at points.

As for the spin drying, as shown in FIG.
The rectangular substrate 5 is rotated to about 1500 rpm, and water droplets are scattered and dried by centrifugal force.

[0015]

In the spin drying method using the single-wafer spin cleaning apparatus 1 shown in FIG. 5, water droplets are generated by centrifugal force generated during rotation while the rectangular substrate 5 is held by the chuck pins 18. To scatter and dry
The dry state changes greatly depending on whether the substrate surface is hydrophilic or hydrophobic. For example, if an insulating film such as an oxide film is formed on the substrate surface, the surface becomes a hydrophilic surface, and if silicon is formed, the surface becomes a hydrophobic surface.

The centrifugal force acting on the water droplet at the center of the substrate is weak, and it is necessary to remove the water droplet at the center of the substrate by taking in the water droplet flying from the vicinity of the center of the substrate to the periphery of the substrate. If it is a hydrophobic surface, it is easy to repel water droplets, and depending on the rotation speed of the substrate, it is difficult for the water droplets at the center of the substrate to be captured by the water droplets flying around the substrate, leaving water droplets at the center of the substrate and poor drying. Becomes

Therefore, with respect to the substrate surface, the rotation speed of the substrate is reduced to a low rotation speed (70 rpm) at the start of spin drying.
pm), and by lowering the rotation speed of the substrate, or by lowering the rotational acceleration of the substrate, the water droplets at the center of the substrate can be easily taken in by the water droplets flying to the periphery of the substrate so that the water droplets at the center of the substrate fly. This prevents poor drying.

However, as for the peripheral edge of the substrate, as shown in FIG. 5, escape of water droplets adhering to the peripheral edge of the substrate 5 becomes poor, and water droplets remain 24. In particular, in the case of a rectangular substrate, the centrifugal force at the center of each side 5a, 5b is weak, and water droplets are likely to remain.

[0019] Since this drying defect eventually remains as particles, it is increased in the case of depositing a CVD film or the like in the next step, resulting in large particles or a source of contamination, which affects the reliability and yield of product panels. May give.

To solve this problem, Japanese Patent Laid-Open No.
In the technique disclosed in JP-A-15081, a groove or a through hole is provided at the center of the chuck pin, and water droplets are eliminated through the groove or the through hole.

Also in this technique, in consideration of the case where the substrate surface is a hydrophobic surface, the rotation speed of the substrate is set to a low rotation speed (about 70 rpm) at the start of spin drying and the substrate is rotated at a low speed. The centrifugal force at the center of each side of each side of the substrate 5 is weak, and it is difficult to remove the water droplets attached to the peripheral edge of the substrate 5 by moving the centrifugal force to the through-hole side of the chuck pin. However, there is a problem that it is insufficient to efficiently remove water droplets in a configuration provided only with.

Further, the technique disclosed in Japanese Patent Application Laid-Open No. 7-15081 is directed to a large disk-shaped substrate, and a centrifugal force at the center of each side of the substrate, which is a problem inherent to a large square substrate. However, the technique described above cannot be used for treating a rectangular substrate as it is.

It is an object of the present invention to provide a spin processing apparatus for a substrate which promotes the movement of water droplets and reliably removes water droplets remaining at the peripheral edge of the substrate.

[0024]

In order to achieve the above object, a spin processing apparatus for a substrate according to the present invention removes an adhering liquid on a substrate surface by centrifugal force and dries the substrate surface. Wherein the substrate is rotated while the peripheral end portion is gripped by the substrate holding portion, and the substrate holding portion shakes off water droplets remaining on the peripheral end portion of the substrate from the substrate using gas pressure. It has a water drop shaker.

Further, the spin processing apparatus for a substrate according to the present invention is a spin processing apparatus for a substrate for removing an adhering liquid on a substrate surface by centrifugal force and drying the substrate surface. The substrate holding unit is rotated by being held by a holding unit, and the substrate holding unit shakes off water droplets remaining at a peripheral end of the substrate from the substrate using gas pressure,
A water droplet removing unit that captures the water droplets shaken off by the water droplet shaking unit, guides the water droplets away from the substrate, and discharges them.

The water drop shake-off section is a nozzle that blows gas to the peripheral edge of the substrate to shake off water droplets remaining at the peripheral edge of the substrate.

The water drop shaker is a nozzle that blows water droplets from the peripheral edge of the substrate by sucking gas remaining in the vicinity of the peripheral edge of the substrate.

The water drop shake-off section is provided on the left and right sides of the water drop removing section.

The water droplet removing unit is a slit for guiding the water droplets shaken by the water droplet shaking unit away from the substrate and discharging the water droplets.
It has a streak-like groove for guiding by a surface tension in a direction in which the water droplet shaken off by the water droplet shaking section is separated from the substrate.

[0030]

Embodiments of the present invention will be described below in detail with reference to the drawings.

As shown in FIG. 1, the substrate processing apparatus of the present invention is a single wafer spin cleaning apparatus, and the substrate processing apparatus 31 of the present invention.
Is equipped with an alkali-based chemical solution chamber 32, an acid-based chemical solution chamber 33, and a rinse / spin drying chamber 34 for performing pure water rinsing and spin drying. The case where the square substrate 5 is used as the substrate will be described as an example.

The peripheral edge of the rectangular substrate 5 is held by chuck pins 45 of a substrate chuck (substrate holder) 46 installed in each of the chambers 32, 33 and 34, and the substrate chuck 46 rotates around an axis 47. Then, a centrifugal force is applied.

In the alkaline chemical liquid chamber 32, a chemical liquid nozzle 36 capable of discharging a chemical liquid necessary for removing organic substances, for example, a chemical liquid of ammonia peroxide, and a rinse nozzle 37 capable of discharging pure water are square. It is installed so as to face the front and back surfaces of the substrate 5.

In the acid-based chemical solution chamber 33,
A chemical solution nozzle 38 capable of discharging a chemical solution necessary for removing metal contamination, for example, a chemical solution of hydrochloric acid / hydrogen peroxide, and a chemical solution required for removing a natural oxide film, for example, a chemical solution of buffered hydrofluoric acid can be discharged. A chemical nozzle 39 and a rinse nozzle 40 capable of discharging pure water are installed so as to face the front and back surfaces of the rectangular substrate 5.

The rinsing / spin drying chamber 3
A rinsing nozzle 41 capable of discharging pure water for performing a final rinsing is provided inside the rectangular substrate 5 so as to face the front and back surfaces of the rectangular substrate 5.

The case of cleaning the substrate 5 will be described with reference to FIG. Square substrate 5 unloaded from loader unit 51
Is introduced into the chemical solution chamber 32, and is subjected to an organic substance and particle cleaning treatment with ammonia peroxide from the chemical solution nozzle 36 while rotating at about 200 rpm. Thereafter, the coarse rinsing with pure water from the rinse nozzle 37 is performed in the same chamber 32. Is performed.

Next, the rectangular substrate 5 is introduced into the chemical solution chamber 33, and while rotating at about 200 rpm, cleaning treatment of metal contamination with hydrochloric acid and hydrogen peroxide from the chemical solution nozzle 38 and subsequent buffered hydrofluoric acid from the chemical solution nozzle 40. The natural oxide film is removed. Then, the same chamber 33
In the inside, coarse rinsing with pure water from the rinsing nozzle 40 is performed.

Then, the rectangular substrate 5 is introduced into a rinsing / spin drying chamber 34 and subjected to final rinsing with pure water from a rinsing nozzle 41 to sufficiently remove the chemical solution adhering to the front and back surfaces of the rectangular substrate 5. After washing off, the square substrate 5 is
By rotating to about 500 rpm, the water is shaken off and dried. Finally, the dried rectangular substrate 5 is carried into the unloader section 52, and one cycle is completed.

As shown in FIG. 2, the peripheral edge 5c of the rectangular substrate 5 is rotated by being gripped by a substrate chuck (substrate holding portion) 46. In this case, each side 5a of the rectangular substrate 5 is rotated. , 5
The centrifugal force at the center of b is weaker than the centrifugal force at the corners of the substrate, which hinders the water droplets from being shaken off at the center of each side 5a, 5b of the rectangular substrate 5.

Accordingly, in the present invention, as shown in FIG. 2, the water drop shaker S1 is provided on the substrate chuck 46 and is located near the center of each of the sides 5a and 5b of the rectangular substrate 5 (including the center; the same applies hereinafter).
Has been placed. In the example shown in FIG.
Are provided in the vicinity of the center of the short side 5a of the rectangular substrate 5, respectively, and are provided separately in the vicinity of the center of the long side 5 b of the rectangular substrate 5. It is not limited.

The water drop shake-off section S1 is a nozzle that shakes off water drops remaining at the peripheral end of the rectangular substrate 5 from the substrate 5 by using gas pressure, and blows a gas to the peripheral end 5c of the rectangular substrate 5. Alternatively, the gas remaining in the vicinity of the peripheral edge of the rectangular substrate 5 is sucked, and the gas pressure causes the peripheral edge 5 of the substrate 5 to be absorbed.
Water droplets are shaken off the peripheral edge 5c of the substrate 5 by overcoming the adhesive force of the water droplets remaining on the substrate c.

The gas pressure generated at the water drop shake-off section S1 is sufficient to overcome the adhesive strength of the water drops adhering to the peripheral end 5c of the substrate 5, and the flow rate is sufficient to overcome the adhesive strength of the water drops. The gas is blown or sucked from the water drop shaking unit S1 while controlling the pressure to be equal to the air pressure.

Therefore, according to the present invention, when the water droplets 24 remain at the peripheral edges (5a, 5b) of the rectangular substrate 5 as shown in FIG. While rotating, gas is blown from the water drop shaving section S1 toward the peripheral edge of the rectangular substrate 5, or the gas near the peripheral edge of the rectangular substrate 5 is sucked to remove water droplets from the peripheral edge 5c of the substrate 5. Since the substrate 5 is shaken off, water droplets including the water droplets remaining on the peripheral end portion 5c of the substrate 5 can be reliably removed from the substrate 5.

Further, in the present invention, as shown in FIGS. 2 and 3, a water drop removing section S2 is provided in addition to the water drop shaking section S1, and the water drops shaken off by the water drop shaking section S1 are sent to the water drop removing section S2. Alternatively, it may be configured to capture and guide in a direction to separate from the substrate 5 and discharge the same.

The water drop shaker S1 is provided on the left and right sides of the water drop remover S2.
Numeral 2 is provided on a substrate chuck 46 as a substrate holding part and is disposed near the center of each side 5a, 5b of the rectangular substrate.
The water droplet removing unit S2 sandwiched between the two water droplet shaving units S1 captures the water droplets shaken off by the water droplet shaking unit S1, and
It is constituted by a slit 57 which is guided in a direction of being separated from the sheet and discharged. Further, the slit 27 has a streak-like groove 27a for guiding by a surface tension in a direction in which the water droplet shaken off by the water droplet shaking unit S1 is separated from the substrate.
As shown in FIG. 3, the streak-like groove 27a is provided on the inner wall facing the slit 27 in a lateral direction away from the substrate, and the streak-like groove 27a extends along the outer circumferential surface of the chuck pin 45 along the circumferential direction. It is provided to induce water droplets by surface tension. In the example shown in FIG. 2, one set of the water drop shaker S1 and the water drop shaker S2 is provided near the center of the short side 5a of the rectangular substrate 5, respectively. Side 5
Although two sets are provided near the center of b, the number is not limited to this number.

As shown in FIG. 3, a water drop removing section S2 is provided in addition to the water drop removing section S1, so that the water drop removing section S1 is provided.
Using the water drop removing unit S2, not only the water droplets shaken off by the water drop shaving unit S1 but also the water droplets shaken off by the centrifugal force around the substrate 5 can be eliminated using the water droplet removing unit S2. Things.

Next, a specific example will be described. As shown in FIG. 2, a substrate chuck 46 as a substrate holding unit includes a chuck pin 45 for holding a peripheral end of the rectangular substrate 5 at a distal end of each arm 44 extending radially from the chuck base 43.
Is provided. A plurality of chuck pins 45 are provided, and in the example shown in FIG. 2, the chuck pins 45 are provided at six positions, but the number of the installation is not limited.

As shown in FIG. 3, the chuck pin 45 has an L-shaped cross section in which a horizontal surface 54 for receiving the back surface of the substrate 5 and a vertical surface 55 for receiving the peripheral end surface of the substrate 5 are combined at a portion for holding the rectangular substrate 5. The projection 54 is provided on the horizontal surface 54 so as to support the back surface of the rectangular substrate 5 at points.

Further, a slit-shaped airflow adjusting groove 58 acting as a nozzle (water drop shaking section S1) is provided on a vertical surface 55 facing the substrate peripheral end 5c of the chuck pin 45 from the height of the horizontal surface 54 to the substrate 5 The opening 58 of the airflow adjusting groove 58 is provided so as to extend to a height exceeding the height position of the airflow adjusting groove 58.
a is open toward the peripheral edge 5c of the substrate. In the example shown in FIG. 2, one airflow adjusting groove 58 is provided near the center of the short side 5 a of the rectangular substrate 5.
Near the center of the long side 5b.
It is not limited to this number of installations.

In the example shown in FIG. 3, the airflow adjusting groove 58 is
Two chuck pins 45 are provided in parallel on the vertical surface 55 facing the peripheral edge 5c of the substrate, but the number is not limited to this. Further, in the example shown in FIG.
Reference numerals 8 denote 1 each near the center of the short side 5a of the rectangular substrate 5.
Each of the rectangular substrates 5 is provided separately in the vicinity of the central portion of the long side 5b of the rectangular substrate 5, but is not limited to this number. The height of the airflow adjusting groove 58 along the vertical surface 55 is extended beyond the height of the substrate 5 so that the airflow from the airflow adjusting groove 58 does not hinder the swinging of water droplets from the substrate 5. However, the height is not limited to that shown in the figure, and may be adjusted as appropriate.

The slit-shaped airflow adjusting groove 58 has one end connected to a gas supply path formed over the arm 44, the chuck base 43, and the shaft 47, and is connected to a gas supply source via a gas supply path (not shown). Gas is supplied, or gas is sucked by a vacuum source via a gas supply path (not shown).

The gas pressure generated in the water drop shake-off section S1 is sufficient to overcome the adhesive strength of the water drops adhering to the peripheral end 5c of the substrate 5, and the flow rate is sufficient to overcome the adhesive strength of the water drops. The gas is blown out or sucked in from the water drop shake-off section S1 by controlling the pressure, pressure and the like.

When a gas is blown from the slit-shaped airflow adjusting groove 58 serving as the water drop shaking portion S1 to the peripheral end 5c of the substrate 5, or the gas near the peripheral end of the rectangular substrate 5 is sucked, the gas pressure is increased. However, the water droplets are shaken off from the peripheral edge 5c of the substrate 5 by overcoming the adhesive force of the water droplet remaining on the peripheral edge 5c of the substrate 5.

Therefore, according to the present invention, even when the water droplets 24 remain at the peripheral end 5c of the rectangular substrate 5 as shown in FIG. 5, the air current is generated while the rectangular substrate 5 is rotating as shown in FIG. In order to blow gas from the adjusting groove 58 toward the peripheral end 5c of the rectangular substrate 5 or to suck gas near the peripheral end of the rectangular substrate 5 to shake off water droplets from the peripheral end 5c of the substrate 5, Water droplets can be reliably removed from the substrate 5 including the peripheral end 5c of the substrate 5.

Further, as shown in FIG. 3, since the back surface of the substrate 5 is supported by the projections 56 so as to float from the horizontal surface 54, the opening 58a of the airflow adjusting groove 58 is also opened to the back surface of the substrate. When the gas is blown from the airflow adjusting groove 58 to the peripheral edge 5c of the rectangular substrate 5 or the gas near the peripheral edge of the rectangular substrate 5 is sucked, water droplets adhering to the peripheral edge 5c of the substrate are removed. In addition to shaking off, it is possible to prevent liquids (including water droplets, cleaning liquids, etc.) from flowing from the back side of the substrate to the front side or from the front side of the substrate to the back side.

Further, in the present invention, the water drop shaker S1
In addition to the slit-shaped airflow adjusting groove 58 as a slit, a slit 57 as a water droplet removing unit S2 is provided, and water droplets shaken off from the substrate by the blowing of gas from the airflow adjusting groove 58 during rotation are captured by the slit 57. Alternatively, it may be guided through the slit 57 in the direction of being separated from the substrate 5 and discharged. When the slits 57 and the grooves 58 are provided on the chuck pins 45 of the substrate chuck 46, as shown in FIG. 3, the slits 57 are provided at the center, the air flow adjusting grooves 58 are provided on the left and right sides thereof, and the air flow adjusting grooves 58 and the slits are provided. 57
Are arranged near the center of each side 5a, 5b of the rectangular substrate. In the example shown in FIG. 2, the airflow adjusting groove 58 and the slit 5
The set 7 is provided in the vicinity of the center of the short side 5a of the rectangular substrate 5 in one set, and is provided in two sets in the vicinity of the center of the long side 5b of the rectangular substrate 5, It is not limited to this number of installations.

Therefore, as shown in FIG. 3, the water droplets shaken off by blowing the gas from the airflow adjusting groove 58 can be captured and eliminated by the slits 57, and the water droplets remaining on the peripheral end 5 c of the substrate 5 can be removed. Can be reliably eliminated.

Further, when a slit 57 as a water droplet removing portion S2 is provided in addition to the slit-shaped air flow adjusting groove 58 as the water droplet shaking portion S1, only water droplets shaken off by blowing gas from the air flow adjusting groove 58 are removed. Instead, it is possible to exclude water droplets moved to the peripheral portion of the substrate 5 by centrifugal force.

As shown in FIG. 2, the peripheral edge (5a, 5b) of the rectangular substrate 5 is gripped by the substrate holding portion and rotated. In this case, each side 5a, The centrifugal force at the center of the substrate 5b is weaker than the centrifugal force at the corners of the substrate, which hinders the water droplets from being shaken off at the center of the sides 5a, 5b of the rectangular substrate 5.

Therefore, according to the present invention, as shown in FIG. 2, the air flow adjusting grooves 58 and 58 as the water drop shake-off section S1 and the slit 57 as the water drop removing section S2 are provided on the chuck pin 45 of the substrate chuck 46 so as to be square. It is arranged near the center of each side 5a, 5b of the mold substrate 5 (including the center, the same applies hereinafter).
In the example shown in FIG. 2, the airflow adjusting groove 58 and the slit 57
Are provided in the vicinity of the center of the short side 5a of the rectangular substrate 5, respectively, and are provided separately in the vicinity of the center of the long side 5 b of the rectangular substrate 5. It is not limited.

The gas blown out from the airflow adjusting groove 58 may be not only dry air but also an inert gas such as nitrogen, argon or helium. Further, the groove 58 is provided as the water drop shaking section S1, and the slit 57 is provided as the water drop removing section S2.
As long as the structure can exhibit the above function, a hole or the like may be used in addition to the groove and the slit.

In the above description, a rectangular substrate is used as the substrate. However, the present invention is not limited to this, and a circular or other irregular substrate may be used.

[0063]

As described above, according to the present invention, not only the substrate surface but also water droplets remaining on the peripheral end surface of the substrate can be removed when removing the processing solution during the spin processing of the substrate, and therefore the reliability can be improved. It is possible to manufacture a highly product panel with high yield.

[Brief description of the drawings]

FIG. 1 is a configuration diagram showing a substrate spin processing apparatus according to an embodiment of the present invention.

FIG. 2 is a plan view showing a substrate chuck used in the substrate spin processing apparatus according to one embodiment of the present invention.

3A is a front view showing a chuck pin used in the present invention, FIG. 3B is a side view showing the chuck pin used in the present invention, and FIG. 3C is a cross-sectional view taken along line AA in FIG. It is.

FIG. 4 is a configuration diagram showing a single-wafer spin processing apparatus according to a conventional example.

FIG. 5 is a plan view showing a substrate chuck used in a conventional example.

6A is a front view showing a chuck pin according to a conventional example, FIG. 6B is a side view showing a chuck pin according to a conventional example,
FIG. 7C is a sectional view taken along line BB of FIG.

[Explanation of symbols]

 31 substrate spin processing device 32, 33, 34 chamber pentagonal substrate 46 substrate chuck 36, 38, 39 chemical liquid nozzle 37, 40, 42 rinse nozzle 43 chuck base 44 arm 45 chuck pin 56 protrusion 47 shaft 57 slit 58 groove

Claims (7)

[Claims] 1. A method for removing adhering liquid on a substrate surface by centrifugal force,
A substrate spin processing apparatus for drying the substrate surface, wherein the substrate is rotated while a peripheral edge portion is gripped by a substrate retaining portion, and the substrate retaining portion remains at a peripheral edge portion of the substrate. A spin processing apparatus for a substrate, comprising: a water drop shake-off section that shakes off water drops from a substrate using gas pressure. 2. The method according to claim 1, wherein the adhering liquid on the substrate surface is removed by centrifugal force.
A substrate spin processing apparatus for drying the substrate surface, wherein the substrate is rotated while a peripheral edge portion is gripped by a substrate retaining portion, and the substrate retaining portion remains at a peripheral edge portion of the substrate. A water drop shaking section for shaking off water drops from the substrate using gas pressure, and a water drop removing section for catching water drops shaken off by the water drop shaking section, guiding the water drops away from the substrate, and discharging the water drops. A spin processing apparatus for a substrate. 3. The substrate according to claim 1, wherein the water droplet shake-off portion is a nozzle that blows a gas to a peripheral edge of the substrate to shake off water droplets remaining at the peripheral edge of the substrate. Spin processing device. 4. The water drop shaker according to claim 1, wherein the water drop shaker is a nozzle that shakes water droplets from the peripheral edge of the substrate by sucking gas remaining in the vicinity of the peripheral edge of the substrate. Spin processing equipment for substrates. 5. The spin processing apparatus for a substrate according to claim 2, wherein the water drop shake-off section is provided on the left and right sides of the water drop removing section. 6. The water drop removing section is a slit for guiding and discharging a water drop shaken by the water drop shaking section in a direction in which the water drop is separated from the substrate.
4. The spin processing apparatus for a substrate according to claim 1. 7. The substrate according to claim 5, wherein the slit has a streak-like groove for guiding a water droplet shaken off by the water droplet shaking portion by a surface tension in a direction of separating the water droplet from the substrate. Spin processing device.