JP2015170609A - substrate processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of reducing an amount of mist generated by collision of process liquid even when a protrusion amount of a chuck pin from an upper surface of a substrate is large.SOLUTION: A spin chuck for rotating a substrate W while holding the same in a horizontal attitude includes a chuck pin 8 which is to be pressed to a peripheral part of the substrate W. The chuck pin 8 includes a slit 42 having an inlet 45 at least a part of which is disposed above the substrate W and which can be seen when viewing the chuck pin 8 from inside the chuck pin 8 in a radial direction R1 and an outlet 47 which is disposed outward from the inlet 45 in the radial direction R1.

Description

  The present invention relates to a substrate processing apparatus for processing a substrate. Examples of substrates to be processed include semiconductor wafers, liquid crystal display substrates, plasma display substrates, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, and photomasks. Substrate, ceramic substrate, solar cell substrate and the like.

In the manufacturing process of a semiconductor device or a liquid crystal display device, a substrate processing apparatus for processing a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display device is used.
The single-wafer type substrate processing apparatus described in Patent Document 1 includes a spin chuck that rotates while holding the substrate horizontally, and a nozzle that discharges the processing liquid toward the substrate held by the spin chuck. . The spin chuck includes a plurality of chuck pins arranged around the substrate. The spin chuck holds the substrate in a horizontal posture by pressing a plurality of chuck pins against the peripheral edge of the substrate.

JP 2013-182957 A

  The processing liquid supplied to the upper surface of the rotating substrate flows outward along the upper surface of the substrate. The upper end portion of the chuck pin protrudes above the upper surface of the substrate. Therefore, the processing liquid on the substrate collides with the upper end portion of the spin chuck, and a mist of the processing liquid is formed. The mist of the processing liquid may adhere to the substrate and contaminate the substrate. In addition, the mist of the processing liquid may adhere to a member such as a nozzle arm that holds the nozzle and generate particles that cause contamination of the substrate.

  It is considered that the amount of mist generated can be reduced by reducing the amount of protrusion of the chuck pins from the upper surface of the substrate. However, it is necessary to secure a certain amount of protrusion on the chuck pin in order to securely hold the substrate. Further, the amount of protrusion of the chuck pin may increase due to factors other than the reliable gripping of the substrate. For example, as described in Patent Document 1, when a liquid on a substrate is heated with an infrared heater, a cover may be attached to the chuck pin in order to protect the chuck pin from infrared rays. In this case, the protruding amount of the chuck pin increases.

  Accordingly, one of the objects of the present invention is to provide a substrate processing apparatus capable of reducing the amount of mist generated due to the collision of the processing liquid even when the amount of chuck pins protruding from the upper surface of the substrate is large.

  In order to achieve the above object, the invention according to claim 1 includes a chuck pin pressed against the peripheral edge of the substrate, and passes through the central portion of the substrate while holding the substrate in a horizontal posture using the chuck pin. A spin chuck that rotates the substrate about a vertical substrate rotation axis; and a processing liquid supply unit that supplies a processing liquid to the substrate held by the spin chuck, and at least a part thereof is disposed above the substrate. And a slit including an inlet that is visible when the chuck pin is viewed in the radial direction perpendicular to the substrate rotation axis from the inside of the chuck pin, and an outlet that is disposed radially outward from the inlet. The chuck pin, and the inlet is a circumference that is a direction around the substrate rotation axis when the chuck pin is viewed in a radial direction from the inside of the chuck pin. And extends in direction, a substrate processing apparatus.

  According to this structure, the slit which guides a process liquid is provided in the chuck pin. The entrance of the slit is disposed at a position where the chuck pin is visible when viewed from the inside in the radial direction. Furthermore, at least a portion of the inlet is disposed above the substrate. At least a part of the inlet extends in the circumferential direction. The processing liquid that flows outward on the substrate toward the chuck pins enters the slit from the inlet, and is discharged out of the slit from the outlet disposed radially outward from the inlet. That is, a part of the processing liquid splashed toward the chuck pin is guided around the chuck pin by the slit without splashing inward or upward. Thereby, since the quantity of the liquid which bounces from a chuck pin can be reduced, the generation amount of mist can be reduced.

According to a second aspect of the present invention, the inlet has a lateral opening that extends in a circumferential direction when the chuck pin is viewed in a radial direction from the inside of the chuck pin and is disposed above the upper surface of the substrate. The substrate processing apparatus according to claim 1, further comprising:
Considering that only the processing liquid on the substrate is efficiently collected at the entrance of the slit, it is preferable that the opening area of the entrance is larger. However, if the entrance of the slit is large, the rigidity of the chuck pin is lowered.

According to this configuration, a lateral opening that is long in the circumferential direction is provided at the entrance of the slit. Thereby, the entrance of the slit can be expanded in the direction along the upper surface of the substrate, that is, the direction in which the liquid on the substrate spreads, while suppressing the decrease in the rigidity of the chuck pin. Therefore, the processing liquid on the substrate can be efficiently collected at the entrance of the slit, and the amount of mist generated can be reduced.
A third aspect of the present invention is the substrate processing apparatus according to the first or second aspect, wherein the inlet includes a vertical opening extending in the vertical direction, at least part of which is disposed above the upper surface of the substrate. .

  According to this configuration, the vertical opening that is long in the vertical direction is provided at the entrance of the slit. Thereby, the entrance of the slit can be expanded in the vertical direction while suppressing a decrease in the rigidity of the chuck pin. Therefore, even when the width of the processing liquid scattered toward the chuck pins is wide up and down, the processing liquid on the substrate can be efficiently collected at the entrance of the slit, and the amount of mist generated can be reduced.

The entire vertical opening at the entrance of the slit may be disposed above the substrate, or only a part thereof may be disposed above the substrate. Specifically, as in the invention described in claim 4, the vertical opening may include an upper end disposed above the upper surface of the substrate and a lower end disposed below the lower surface of the substrate. Good.
According to this configuration, the vertical opening provided at the entrance of the slit extends in the vertical direction from a position above the substrate to a position below the substrate. Therefore, a part of the vertical opening extends upward from a height equal to the upper surface of the substrate. Therefore, the processing liquid flowing near the upper surface of the substrate can be reliably collected at the entrance of the slit. Thereby, since the amount of the processing liquid that rebounds from the chuck pin can be reduced, the amount of mist generated can be reduced.

The invention according to claim 5 is the substrate processing apparatus according to any one of claims 1 to 4, wherein at least a part of the outlet is aligned with the inlet in the radial direction.
According to this configuration, since the entrance of the slit and the exit of the slit are arranged in the radial direction, at least a part of the slit extends horizontally in the radial direction from the entrance to the exit. Therefore, the flow of the processing liquid from the inlet toward the outlet is not easily obstructed by the inner surface of the slit. Thereby, since the process liquid in a slit can be discharged | emitted efficiently, it can suppress or prevent that the approach of the process liquid into a slit is prevented by the process liquid in a slit.

A sixth aspect of the present invention is the substrate processing apparatus according to any one of the first to fifth aspects, wherein at least a part of the inlet is disposed above the substrate so as to overlap the substrate in a plan view. is there.
According to this configuration, at least a part of the entrance of the slit is disposed above the substrate and overlaps the substrate in plan view. In other words, at least a part of the inlet is disposed inward of the peripheral end surface of the substrate. Since the entrance of the slit can be brought close to the processing liquid on the substrate, the processing liquid on the substrate can be efficiently collected at the entrance of the slit. Thereby, since the amount of the processing liquid that rebounds from the chuck pin can be reduced, the amount of mist generated can be reduced.

According to a seventh aspect of the present invention, the chuck pin includes a conductive portion that contacts the substrate, and the conductive portion is formed of a conductive material having conductivity. The substrate processing apparatus according to the item.
According to this structure, the electroconductive part which has electroconductivity is provided in the chuck pin, and this electroconductive part contacts a board | substrate at least in one of a support position and a holding position. Therefore, charging of the substrate can be suppressed or prevented.

The invention according to claim 8 is the substrate processing apparatus according to claim 7, wherein the conductive portion is covered with the substrate or the chuck pins in a plan view.
The conductive part is formed of a conductive material containing carbon. When infrared rays for heating the liquid on the substrate are irradiated on the upper surface of the substrate, the black conductive portion easily absorbs infrared rays, and thus the temperature rises. Therefore, the conductive portion can be protected from the heat source by covering the conductive portion with the substrate or the chuck pin. Thereby, the temperature rise of an electroconductive part can be suppressed.

The invention according to claim 9 is characterized in that the chuck pin includes a contact portion that is softer than the substrate pressed against the peripheral portion of the substrate, and a core portion that is harder than the contact portion disposed radially outward of the contact portion. The substrate processing apparatus according to claim 1, wherein each of the contact portion and the core portion is formed of a conductive material having conductivity.
According to this structure, since the contact part which contacts a board | substrate is softer than a board | substrate, it can suppress or prevent that a board | substrate is damaged by the contact of a board | substrate and a contact part. In addition, since the core portion that supports the contact portion from the outside in the radial direction has higher rigidity than the contact portion, deformation of the contact portion when the chuck pin holds the substrate can be effectively suppressed. Furthermore, since both the contact portion and the core portion have conductivity, the electricity of the substrate can be released from the contact portion to the core portion.

It is the schematic diagram which looked at the inside of the chamber with which the substrate processing apparatus concerning 1st Embodiment of this invention was equipped horizontally. It is a typical top view which shows a spin base and the structure relevant to this. It is a schematic diagram which shows the vertical cross section of the chuck pin which follows the III-III line | wire shown in FIG. It is a schematic diagram which shows a chuck pin. FIG. 4A is a plan view of the grip portion of the chuck pin. FIG. 4B is a front view of the gripping portion of the chuck pin as viewed from the inside in the radial direction. FIG. 4C is a left side view of the grip portion of the chuck pin. It is a figure for demonstrating the flow of the process liquid supplied to the upper surface of the board | substrate. It is process drawing for demonstrating an example of the process of the board | substrate performed by the process unit. It is the schematic diagram which looked at the chuck pin which concerns on 2nd Embodiment of this invention horizontally. It is a schematic diagram which shows the horizontal cross section of a chuck pin. It is a schematic diagram which shows the vertical cross section of the chuck pin which concerns on 3rd Embodiment of this invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a schematic view of the inside of a chamber 4 provided in the substrate processing apparatus 1 according to the first embodiment of the present invention viewed horizontally. FIG. 2 is a schematic plan view showing the spin base 9 and the configuration related thereto. FIG. 3 is a schematic diagram showing a vertical cross section of the chuck pin 8 along the line III-III shown in FIG.

The substrate processing apparatus 1 is a single-wafer type apparatus that processes a disk-shaped substrate W such as a silicon wafer one by one. As shown in FIG. 1, the substrate processing apparatus 1 controls the processing unit 2 that processes a substrate W with a processing liquid, a transfer robot (not shown) that transfers the substrate W to the processing unit 2, and the substrate processing apparatus 1. And a control device 3 that performs the control.
As shown in FIG. 1, each processing unit 2 is a single-wafer type unit. Each processing unit 2 has a box-shaped chamber 4 having an internal space, and a vertical substrate rotation axis A1 passing through the central portion of the substrate W while holding one substrate W in a horizontal posture in the chamber 4. A spin chuck 5 that rotates the substrate W, and a plurality of nozzles (a first chemical liquid nozzle 13, a second chemical liquid nozzle 18, and a rinsing liquid nozzle 23) that supply a processing liquid to the substrate W held on the spin chuck 5. A heating device 6 for heating the substrate W held on the spin chuck 5 from above the substrate W and a cylindrical cup 7 surrounding the spin chuck 5 around the substrate rotation axis A1 are included.

  As shown in FIG. 1, the spin chuck 5 includes a disc-shaped spin base 9 that is held in a horizontal posture, a plurality of chuck pins 8 that protrude upward from the peripheral edge of the upper surface of the spin base 9, and a plurality of chucks. And a chuck opening / closing mechanism 10 for holding the substrate W on the pin 8. The spin chuck 5 further rotates the spin shaft 11 and the chuck pin 8 around the substrate rotation axis A1 by rotating the spin shaft 11 from the center of the spin base 9 and extending downward along the substrate rotation axis A1. And a spin motor 12 that rotates the motor.

  As shown in FIG. 2, the plurality of chuck pins 8 are arranged in the circumferential direction (direction around the substrate rotation axis A1) at intervals. The chuck pin 8 includes a base 33 that is driven around the vertical pin rotation axis A2 by the chuck opening / closing mechanism 10, a support 34 that supports the lower peripheral edge of the substrate W, and a grip that is pressed against the peripheral edge of the substrate W. Part 35. The base portion 33 is disposed above the spin base 9, and the grip portion 35 and the support portion 34 are disposed above the base portion 33. The support portion 34 is disposed inward of the grip portion 35 (in a direction approaching the substrate rotation axis A1). The upper surface of the support portion 34 is an inclined surface that extends inwardly downward from the grip portion 35.

  The chuck pin 8 has a pin rotation axis between a closed position (position shown in FIG. 2) where the grip 35 is pressed against the peripheral edge of the substrate W and an open position where the grip 35 is separated from the peripheral edge of the substrate W. It can be rotated with respect to the spin base 9 around A2. As shown in FIG. 2, the grip part 35 and the support part 34 are arranged around the pin rotation axis A2. When the chuck pin 8 rotates around the pin rotation axis A2, the gripping portion 35 and the support portion 34 move horizontally. In FIG. 3, for convenience, the substrate W is illustrated as moving horizontally. .

  The control device 3 controls the chuck opening / closing mechanism 10 so that a plurality of chuck pins 8 are in a closed state where the plurality of chuck pins 8 grip the substrate W, and an open state where the gripping of the substrate W by the plurality of chuck pins 8 is released. The state of the plurality of chuck pins 8 is switched. When the substrate W is transported to the spin chuck 5, the control device 3 retracts the chuck pins 8 to the open position. In this state, the control device 3 controls the transport robot so that the substrate W is placed on the plurality of chuck pins 8. As a result, as indicated by a one-dot chain line in FIG. 3, the upper surface of the support portion 34 is in contact with the peripheral edge of the lower surface of the substrate W, and the substrate W is separated from the upper surface of the spin base 9 at a support position ( It is supported in a horizontal posture at a position indicated by a chain line).

  After the substrate W is placed on the plurality of chuck pins 8, the control device 3 moves the chuck pins 8 from the open position to the closed position. As shown in FIG. 3, since the upper surface of the support portion 34 extends obliquely upward toward the grip portion 35, the substrate W is moved by the plurality of support portions 34 in the process of moving the chuck pin 8 toward the closed position. Be lifted gradually. Further, the grip portion 35 approaches the peripheral end surface of the substrate W in the process in which the chuck pin 8 moves toward the closed position. As a result, the grip portion 35 is pressed against the peripheral edge of the substrate W, and the substrate W is gripped in a horizontal posture at a grip position (a position indicated by a two-dot chain line in FIG. 3) above the support position.

  As shown in FIG. 1, the processing unit 2 includes a first chemical liquid nozzle 13 that discharges the first chemical liquid downward, a first chemical liquid pipe 14 connected to the first chemical liquid nozzle 13, and a first chemical liquid pipe 14. The first chemical liquid valve 15 mounted, the first chemical liquid arm 16 having the first chemical liquid nozzle 13 attached to the tip thereof, and the first chemical liquid arm 16 are moved, so that the position where the first chemical liquid is deposited is changed to the substrate W. And a first nozzle moving device 17 that moves within the upper surface of the first nozzle moving device 17. An example of the first chemical solution is SPM (mixed solution of sulfuric acid and hydrogen peroxide solution).

  As shown in FIG. 1, the processing unit 2 includes a second chemical liquid nozzle 18 that discharges the second chemical liquid downward, a second chemical liquid pipe 19 connected to the second chemical liquid nozzle 18, and a second chemical liquid pipe 19. The second chemical liquid valve 20 mounted, the second chemical liquid arm 21 having the second chemical liquid nozzle 18 attached to the tip thereof, and the second chemical liquid arm 21 are moved, so that the landing position of the second chemical liquid is set on the substrate W. And a second nozzle moving device 22 that moves within the upper surface of the second nozzle moving device 22. An example of the second chemical solution is SC1 (mixed solution of ammonia water, hydrogen peroxide solution, and water).

  As shown in FIG. 1, the processing unit 2 includes a rinse liquid nozzle 23 that discharges a rinse liquid downward, a rinse liquid pipe 24 connected to the rinse liquid nozzle 23, and a rinse liquid interposed in the rinse liquid pipe 24. A valve 25, a rinsing liquid arm 26 having a rinsing liquid nozzle 23 attached to the tip thereof, and a nozzle moving device 27 for moving the rinsing liquid landing position within the upper surface of the substrate W by moving the rinsing liquid arm 26. Including. An example of the rinsing liquid is pure water (Deionzied water).

  As shown in FIG. 1, the cup 7 is disposed outside the substrate W held by the spin chuck 5 (in a direction away from the substrate rotation axis A1). The cup 7 surrounds the spin base 9. When the processing liquid is supplied to the substrate W while the spin chuck 5 is rotating the substrate W, the processing liquid is scattered from the substrate W to the periphery thereof. When the processing liquid is supplied to the substrate W, the upper end portion 7 a of the cup 7 that opens upward is disposed above the spin base 9. Therefore, the treatment liquid such as the chemical liquid and the rinse liquid discharged around the substrate W is received by the cup 7. Then, the processing liquid collected in the cup 7 is sent to a collecting device or a draining device (not shown).

As shown in FIG. 1, the heating device 6 includes an infrared heater 28 disposed above the substrate W held by the spin chuck 5, a heater arm 31 having the infrared heater 28 attached to the tip, and a heater arm. And a heater moving device 32 for moving 31.
As shown in FIG. 1, the infrared heater 28 includes an infrared lamp 29 that emits light including infrared rays, and a lamp housing 30 that houses the infrared lamp 29. As shown in FIG. 2, the infrared heater 28 is smaller than the substrate W in plan view. The infrared lamp 29 and the lamp housing 30 are attached to the heater arm 31. The infrared lamp 29 and the lamp housing 30 move together with the heater arm 31.

  The infrared lamp 29 is a halogen lamp. The infrared lamp 29 includes a filament and a quartz tube that accommodates the filament. The infrared lamp 29 may be a carbon heater or a heating element other than the halogen lamp and the carbon heater. At least a part of the lamp housing 30 is formed of a material having optical transparency and heat resistance such as quartz. When the infrared lamp 29 emits light, the light from the infrared lamp 29 passes through the lamp housing 30 and is emitted from the outer surface of the lamp housing 30.

  As shown in FIG. 1, the lamp housing 30 has a bottom wall parallel to the upper surface of the substrate W. The infrared lamp 29 is disposed above the bottom wall. The lower surface of the bottom wall includes an irradiation surface 30a that is parallel to and flat with the upper surface of the substrate W. In a state where the infrared heater 28 is disposed above the substrate W, the irradiation surface 30a of the lamp housing 30 faces the upper surface of the substrate W in the vertical direction with a space therebetween. When the infrared lamp 29 emits light in this state, light including infrared light is irradiated from the irradiation surface 30 a of the lamp housing 30 toward the upper surface of the substrate W and is irradiated onto the upper surface of the substrate W. The irradiation surface 30a is, for example, a circle whose diameter is smaller than the radius of the substrate W. Irradiation surface 30a is not limited to a circle, and may have a rectangular shape whose length in the longitudinal direction is equal to or greater than the radius of substrate W, or may have a shape other than a circle and a rectangle.

  As shown in FIG. 1, the heater moving device 32 moves the infrared heater 28 horizontally by rotating the heater arm 31 around the heater rotation axis A <b> 3 extending in the vertical direction around the spin chuck 5. As shown in FIG. 2, the heater moving device 32 moves the infrared heater 28 horizontally along an arcuate locus passing through the central portion of the substrate W in plan view. Therefore, the infrared heater 28 moves in a horizontal plane including the upper side of the spin chuck 5. The heater moving device 32 changes the distance between the irradiation surface 30a and the substrate W by moving the infrared heater 28 in the vertical direction.

  The light from the infrared heater 28 is irradiated to the irradiation position in the upper surface of the substrate W. The control device 3 rotates the infrared heater 28 around the heater rotation axis A <b> 3 by the heater moving device 32 while rotating the substrate W by the spin chuck 5 while the infrared heater 28 is emitting infrared rays. Thereby, the upper surface of the substrate W is scanned by the irradiation position as the heating position. Therefore, when the infrared lamp 29 emits infrared light while the liquid such as the processing liquid is held on the substrate W, the infrared light is absorbed by the liquid on the substrate W, and the temperature of the liquid on the substrate W rises.

FIG. 4 is a schematic diagram showing the chuck pin 8. FIG. 4A is a plan view of the grip portion 35 of the chuck pin 8. FIG. 4B is a front view of the grip portion 35 of the chuck pin 8 as viewed from the inside in the radial direction R1. FIG. 4C is a left side view of the grip portion 35 of the chuck pin 8.
As shown in FIG. 4C, the grip portion 35 of the spin chuck 5 includes an upper surface 37 parallel to the upper surface of the substrate W, an inner end surface 38 extending downward from the inner edge of the upper surface 37, and a lower edge from the outer edge of the upper surface 37. Two inclined surfaces (an upper inclined surface 39 and a lower inclined surface) that form an outer end surface 36 that extends and an accommodating groove 41 having a V-shaped vertical cross section that opens inwardly (on the left side in FIG. 4C). 40). The two inclined surfaces include an upper inclined surface 39 that extends obliquely upward and inward from the bottom 41a of the receiving groove 41, and a lower inclined surface 40 that extends obliquely downward and inward from the bottom 41a of the receiving groove 41. The upper surface 37 and the inner end surface 38 of the grip portion 35 are located above the grip position (the position of the substrate W indicated by a two-dot chain line in FIG. 4C).

  As shown in FIG. 3, the chuck pin 8 includes a slit 42 that penetrates the grip portion 35 in the radial direction R1 (direction orthogonal to the substrate rotation axis A1). As shown in FIG. 4B, when the chuck pin 8 is viewed from the inside in the radial direction R1, the slit 42 has a U-shape opened downward. The slit 42 includes a horizontal portion 43 that extends horizontally in the circumferential direction C <b> 1 and two vertical portions 44 that extend downward from both ends of the horizontal portion 43.

  As shown in FIG. 4B, the horizontal portion 43 of the slit 42 is disposed above the upper surface of the substrate W at the holding position. The vertical portion 44 of the slit 42 extends from the horizontal portion 43 to a position below the lower surface of the substrate W at the holding position. As shown in FIG. 4A, the inner end of the horizontal portion 43 opens at the inner end surface 38 of the grip portion 35, and the outer end of the horizontal portion 43 opens at the outer end surface 36 of the grip portion 35. Yes. 4C, the inner end of the vertical portion 44 is opened at the inner end surface 38, the upper inclined surface 39, and the lower inclined surface 40 of the grip portion 35, and the outer end of the vertical portion 44. Is open at the outer end surface 36 of the grip portion 35.

  As shown in FIG. 3, the vertical section of the horizontal portion 43 extends horizontally in the radial direction R1. Similarly, the horizontal section of the vertical portion 44 extends horizontally in the radial direction R1. The height of the horizontal portion 43 (the length in the vertical direction) is constant from the inner end of the horizontal portion 43 to the outer end of the horizontal portion 43, and the width of the horizontal portion 43 (the length in the circumferential direction C1) is the horizontal portion. It is constant from the inner end of 43 to the outer end of the horizontal portion 43. Similarly, the height of the vertical portion 44 is constant from the inner end of the vertical portion 44 to the outer end of the vertical portion 44, and the width of the vertical portion 44 is from the inner end of the vertical portion 44 to the outer end of the vertical portion 44. It is constant.

  As shown in FIG. 4C, the slit 42 includes an inlet 45 formed by the inner ends of the horizontal portion 43 and the vertical portion 44, and an outlet 47 formed by the outer ends of the horizontal portion 43 and the vertical portion 44. And a passage 46 extending in the radial direction R1 from the inlet 45 to the outlet 47 through the inside of the grip portion 35. As shown in FIG. 4B, when the chuck pin 8 is viewed from the inside in the radial direction R1, the inlet 45 of the slit 42 is surrounded by a common member (chuck pin 8). The entrance 45 of the slit 42 includes a lateral opening 45a extending in the circumferential direction C1, and a longitudinal opening 45b extending downward from both ends of the lateral opening 45a. The height of the horizontal opening 45a is equal to the width of the vertical opening 45b. The height of the lateral opening 45a is not more than half of the height from the upper surface of the substrate W located at the gripping position to the upper surface 37 of the gripping portion 35. The height of the lateral opening 45a is, for example, greater than 0 and less than 0.5 mm.

  The chuck pin 8 corresponds to a conductive portion made of a conductive material. The chuck pin 8 is made of a composite material that is softer than the substrate W and has chemical resistance and conductivity. A specific example of the composite material is a material containing a resin and carbon. The chuck pin 8 may be a laminate in which a resin material containing resin and a carbon material containing carbon are alternately laminated, or a resin member in which a powdery or particulate carbon material is dispersed inside. Also good.

  The carbon contained in the chuck pin 8 may be carbon fiber (carbon fiber), or may be carbon powder or particles. Specific examples of the resin contained in the chuck pin 8 are PFA (tetrafluoroethylene-perfluoroalkylvinyl ether copolymer), PCTFE (Poly Chloro Tri Furuoro Ethylene), PTFE (polytetrafluoroethylene), and PEEK (polyetheretherketone). Each of these resins is softer than the substrate W and has chemical resistance.

FIG. 5 is a diagram for explaining the flow of the processing liquid supplied to the upper surface of the substrate W.
The processing liquid supplied to the upper surface of the rotating substrate W flows outward along the upper surface of the substrate W while flowing downstream in the rotation direction with respect to the substrate W. Since the upper end portion of the grip portion 35 of the chuck pin 8 is disposed above the upper surface of the substrate W located at the grip position, the processing liquid on the substrate W is outwardly directed toward the upper end portion of the grip portion 35. Flowing into. A part of the processing liquid enters the chuck pin 8 from the inlet 45 of the slit 42 opened on the outer surface of the grip portion 35 and is discharged out of the chuck pin 8 from the outlet 47 of the slit 42. Therefore, the amount of mist generated when the processing liquid collides with the chuck pin 8 is reduced as compared with the case where the slit 42 is not provided.

FIG. 6 is a process diagram for explaining an example of the processing of the substrate W performed by the processing unit 2. In the following, reference is made to FIG. Reference is made appropriately to FIG.
When the substrate W is processed by the processing unit 2, a carry-in process (step S1 in FIG. 6) for carrying the substrate W into the chamber 4 is performed.
Specifically, the control device 3 causes the hand of the transfer robot holding the substrate W to enter the chamber 4 with all the nozzles retracted from above the spin chuck 5. Then, the control device 3 controls the transport robot so that the substrate W on the hand is placed on the plurality of chuck pins 8. Thereafter, the control device 3 retracts the hand of the transfer robot from the chamber 4. Further, after the substrate W is placed on the plurality of chuck pins 8, the control device 3 moves the chuck pins 8 from the open position to the closed position so that the plurality of chuck pins 8 grip the substrate W. Thereafter, the control device 3 causes the spin motor 12 to start rotating the substrate W.

Next, a first chemical solution supply step (step S2 in FIG. 6) for supplying SPM, which is an example of the first chemical solution, to the substrate W is performed.
Specifically, the control device 3 controls the first nozzle moving device 17 to move the first chemical liquid nozzle 13 from the retracted position to the processing position. Thereby, the first chemical liquid nozzle 13 is disposed above the substrate W. Thereafter, the control device 3 opens the first chemical liquid valve 15 and causes the first chemical liquid nozzle 13 to discharge SPM having a temperature higher than room temperature (for example, 140 ° C.) toward the upper surface of the rotating substrate W. In this state, the control device 3 controls the first nozzle moving device 17 to move the SPM landing position with respect to the upper surface of the substrate W between the central portion and the peripheral portion.

  The SPM discharged from the first chemical liquid nozzle 13 lands on the upper surface of the substrate W and then flows outward along the upper surface of the substrate W by centrifugal force. Therefore, SPM is supplied to the entire upper surface of the substrate W, and a liquid film of SPM that covers the entire upper surface of the substrate W is formed on the substrate W. Thereby, foreign substances such as a resist film are removed from the substrate W by SPM. Further, since the controller 3 moves the SPM landing position with respect to the upper surface of the substrate W between the central portion and the peripheral portion while the substrate W is rotating, the SPM landing position is determined by the substrate W It passes through the entire upper surface of. Therefore, the upper surface of the substrate W is processed uniformly.

  Next, the control device 3 controls the spin motor 12 to rotate the substrate W up to a low rotation speed (for example, 1 to 30 rpm) in a state where the entire upper surface of the substrate W is covered with the liquid film of SPM. Reduce. For this reason, the centrifugal force acting on the SPM on the substrate W is weakened, and the amount of SPM discharged from the substrate W is reduced. The control device 3 closes the first chemical liquid valve 15 and stops the discharge of the SPM from the first chemical liquid nozzle 13 while the substrate W is rotating at a low rotation speed. Thus, the SPM liquid film covering the entire upper surface of the substrate W is held on the substrate W in a state where the supply of the SPM to the substrate W is stopped. After stopping the supply of SPM to the substrate W, the control device 3 controls the first nozzle moving device 17 to retract the first chemical solution nozzle 13 from above the spin chuck 5.

Next, a heating process (step S3 in FIG. 6) for heating the SPM on the substrate W is performed.
Specifically, the control device 3 moves the infrared heater 28 from the retracted position to the processing position by controlling the heater moving device 32. Further, the control device 3 causes the infrared heater 28 to start light emission after or before the infrared heater 28 reaches above the substrate W. Thereby, the temperature (heating temperature) of the infrared heater 28 rises to a temperature higher than the boiling point of the first chemical (in this process example, SPM) and is maintained at that temperature. The control device 3 causes the heater moving device 32 to move the infrared heater 28 horizontally so that the infrared irradiation position on the upper surface of the substrate W moves from one of the central portion and the peripheral portion to the other. The controller 3 retracts the infrared heater 28 from above the substrate W after the SPM is heated by the infrared heater 28 for a predetermined time. Thereafter, the control device 3 stops the light emission of the infrared heater 28.

  Next, the control device 3 controls the spin motor 12 to rotate the substrate W at a rotation speed larger than the low rotation speed described above in a state where the supply of the liquid to the substrate W is stopped. As a result, the centrifugal force applied to the SPM on the substrate W increases, and the SPM on the substrate W is shaken off around the substrate W. Therefore, almost all SPM is discharged from the substrate W. The SPM scattered around the substrate W is received by the cup 7 and guided to the recovery device or the drainage device via the cup 7.

  As described above, the control device 3 moves the infrared irradiation position on the upper surface of the substrate W from one of the central portion and the peripheral portion to the other while rotating the substrate W, and thus covers the entire upper surface of the substrate W. The liquid film of SPM is heated uniformly. The heating temperature of the substrate W by the infrared heater 28 is set to a temperature equal to or higher than the boiling point at the concentration of SPM. Therefore, the SPM on the substrate W is heated to the boiling point at that concentration. In particular, when the heating temperature of the substrate W by the infrared heater 28 is set to be higher than the boiling point at the concentration of SPM, the temperature at the interface between the substrate W and SPM is maintained higher than the boiling point, Removal of foreign matter from the substrate W is promoted.

Next, a first rinsing liquid supply step (step S4 in FIG. 6) for supplying pure water, which is an example of a rinsing liquid, to the substrate W is performed.
Specifically, the control device 3 controls the nozzle moving device 27 to move the rinse liquid nozzle 23 from the retracted position to the processing position. Thereafter, the control device 3 opens the rinse liquid valve 25 and causes the rinse liquid nozzle 23 to discharge pure water toward the upper surface of the rotating substrate W. As a result, the SPM remaining on the substrate W is washed away with pure water, and a liquid film of pure water covering the entire upper surface of the substrate W is formed. And when predetermined time passes since the rinse liquid valve | bulb 25 was opened, the control apparatus 3 will close the rinse liquid valve | bulb 25, and will stop discharge of pure water. Thereafter, the control device 3 controls the nozzle moving device 27 to retract the rinse liquid nozzle 23 from above the substrate W. The liquid discharged from the rinsing liquid nozzle 23 may be not only pure water but also functional water to which warm water or a very small amount of chemical liquid is added.

Next, a second chemical liquid supply step (step S5 in FIG. 6) for supplying SC1 as an example of the second chemical liquid to the substrate W is performed.
Specifically, the control device 3 controls the second nozzle moving device 22 to move the second chemical solution nozzle 18 from the retracted position to the processing position. Thereafter, the control device 3 opens the second chemical liquid valve 20 and discharges the SC1 to the second chemical liquid nozzle 18 toward the upper surface of the rotating substrate W. In this state, the control device 3 controls the second nozzle moving device 22 to move the SC1 liquid landing position relative to the upper surface of the substrate W between the central portion and the peripheral portion. And if predetermined time passes after the 2nd chemical | medical solution valve | bulb 20 opens, the control apparatus 3 will close the 2nd chemical | medical solution valve | bulb 20, and will stop discharge of SC1. Thereafter, the control device 3 retracts the second chemical solution nozzle 18 from above the substrate W by controlling the second nozzle moving device 22.

  SC1 discharged from the second chemical liquid nozzle 18 lands on the upper surface of the substrate W, and then flows outward along the upper surface of the substrate W by centrifugal force. Therefore, the pure water on the substrate W is swept away by the SC 1 and discharged around the substrate W. As a result, the pure water liquid film on the substrate W is replaced with the SC1 liquid film covering the entire upper surface of the substrate W. Further, since the controller 3 moves the SC1 liquid landing position with respect to the upper surface of the substrate W between the central portion and the peripheral portion while the substrate W is rotating, the SC1 liquid landing position is the substrate W The entire upper surface of the substrate W is scanned. Therefore, SC1 discharged from the second chemical liquid nozzle 18 is directly sprayed over the entire upper surface of the substrate W, and the entire upper surface of the substrate W is processed uniformly.

Next, a second rinse liquid supply step (step S6 in FIG. 6) for supplying pure water, which is an example of a rinse liquid, to the substrate W is performed.
Specifically, the control device 3 controls the nozzle moving device 27 to move the rinse liquid nozzle 23 from the retracted position to the processing position. After the rinsing liquid nozzle 23 is disposed above the substrate W, the control device 3 opens the rinsing liquid valve 25 and causes the rinsing liquid nozzle 23 to discharge pure water toward the upper surface of the rotating substrate W. As a result, the SC1 on the substrate W is washed away by the pure water and discharged around the substrate W. Therefore, the liquid film of SC1 on the substrate W is replaced with a liquid film of pure water that covers the entire upper surface of the substrate W. And when predetermined time passes since the rinse liquid valve | bulb 25 was opened, the control apparatus 3 will close the rinse liquid valve | bulb 25, and will stop discharge of pure water. Thereafter, the control device 3 controls the nozzle moving device 27 to retract the rinse liquid nozzle 23 from above the substrate W.

Next, a drying process (step S7 in FIG. 6) for drying the substrate W is performed by rotating the substrate W at a high speed.
Specifically, the control device 3 accelerates the rotation of the substrate W by the spin motor 12, and has a high rotation speed (for example, several thousand rpm) higher than the rotation speed from the first chemical liquid supply process to the second rinse liquid supply process. ) To rotate the substrate W. Thereby, a large centrifugal force is applied to the liquid on the substrate W, and the liquid adhering to the substrate W is shaken off around the substrate W. In this way, the liquid is removed from the substrate W, and the substrate W is dried. When a predetermined time elapses after the high-speed rotation of the substrate W is started, the control device 3 controls the spin motor 12 to stop the rotation of the substrate W by the spin chuck 5.

Next, an unloading step (Step S8 in FIG. 6) for unloading the substrate W from the chamber 4 is performed.
Specifically, the control device 3 moves the chuck pin 8 from the closed position to the open position, and releases the grip of the substrate W by the spin chuck 5. Thereafter, the control device 3 causes the hand of the transfer robot to enter the chamber 4 with all the nozzles retracted from above the spin chuck 5. Then, the control device 3 holds the substrate W on the spin chuck 5 on the hand of the transfer robot. Thereafter, the control device 3 retracts the hand of the transfer robot from the chamber 4. Thereby, the processed substrate W is unloaded from the chamber 4.

  As described above, in the first embodiment, the slit 42 for guiding the processing liquid is provided in the chuck pin 8. The entrance 45 of the slit 42 is disposed at a position that is visible when the chuck pin 8 is viewed from the inside in the radial direction R1. Further, at least a part of the inlet 45 is disposed above the substrate W. The processing liquid that flows outward on the substrate W toward the chuck pins 8 enters the slit 42 from the inlet 45, and exits the slit 42 from the outlet 47 disposed outward in the radial direction R <b> 1 from the inlet 45. To be discharged. That is, a part of the processing liquid scattered toward the chuck pin 8 is guided around the chuck pin 8 through the inside of the chuck pin 8 without splashing inward or upward. Thereby, since the quantity of the liquid which bounces off from the chuck pin 8 can be reduced, the generation amount of mist can be reduced.

Considering that only the processing liquid on the substrate W is efficiently collected at the inlet 45 of the slit 42, the opening area of the inlet 45 is preferably as large as possible. However, if the entrance 45 of the slit 42 is large, the rigidity of the chuck pin 8 is lowered.
In the first embodiment, since the lateral opening 45a that is long in the circumferential direction C1 is provided at the entrance 45 of the slit 42, the entrance 45 of the slit 42 is connected to the upper surface of the substrate W while suppressing a decrease in rigidity of the chuck pin 8. In the direction along which the liquid on the substrate W spreads. Therefore, the processing liquid on the substrate W can be efficiently collected at the entrance 45 of the slit 42, and the amount of mist generated can be reduced.

  In the first embodiment, since the vertical opening 45b that is long in the vertical direction is provided at the inlet 45 of the slit 42, the inlet 45 of the slit 42 is expanded in the vertical direction while suppressing a decrease in rigidity of the chuck pin 8. can do. Therefore, even when the width of the processing liquid scattered toward the chuck pins 8 is wide in the vertical direction, the processing liquid on the substrate W can be efficiently collected at the inlet 45 of the slit 42, and the amount of mist generated can be reduced.

  Further, the vertical opening 45 b of the entrance 45 of the slit 42 extends in the vertical direction from a position above the substrate W to a position below the substrate W. Accordingly, a part of the vertical opening 45b extends upward from a height equal to the upper surface of the substrate W. Therefore, the processing liquid flowing near the upper surface of the substrate W can be reliably collected at the inlet 45 of the slit 42. Thereby, since the amount of the processing liquid that rebounds from the chuck pin 8 can be reduced, the amount of mist generated can be reduced.

  In the first embodiment, since the inlet 45 of the slit 42 and the outlet 47 of the slit 42 are arranged in the radial direction R1, the passage 46 of the slit 42 extends horizontally from the inlet 45 to the outlet 47 in the radial direction R1. Yes. Accordingly, the flow of the processing liquid from the inlet 45 toward the outlet 47 is not easily obstructed by the inner surface of the slit 42. Thereby, since the processing liquid in the slit 42 can be efficiently discharged, it is possible to suppress or prevent the processing liquid from entering the slit 42 from being hindered by the processing liquid in the slit 42.

In the first embodiment, a part of the entrance 45 of the slit 42 is disposed above the substrate W and overlaps the substrate W in plan view. In other words, a part of the entrance 45 is disposed inward of the peripheral end surface of the substrate W. Since the inlet 45 of the slit 42 can be brought close to the processing liquid on the substrate W, the processing liquid on the substrate W can be efficiently collected at the inlet 45 of the slit 42. Thereby, since the amount of the processing liquid that rebounds from the chuck pin 8 can be reduced, the amount of mist generated can be reduced.
Second Embodiment
Next, a second embodiment of the present invention will be described. In 2nd Embodiment, the holding part pressed against the peripheral part of a board | substrate and the support part which contacts the lower surface of a board | substrate are provided in the separate member.

FIG. 7 is a schematic view of the chuck pin 208 according to the second embodiment of the present invention viewed horizontally. FIG. 8 is a schematic diagram showing a horizontal cross section of the chuck pin 208. 7 and 8, the same components as those shown in FIGS. 1 to 6 described above are denoted by the same reference numerals as those in FIG. 1 and the description thereof is omitted.
In the second embodiment, a plurality of holding pins including support pins 234 and chuck pins 208 are provided on the spin chuck 5 (only one holding pin is shown in FIG. 7). The plurality of support pins 234 support the substrate W in a horizontal posture by point contact between each support pin 234 and the lower surface peripheral portion of the substrate W. The plurality of chuck pins 208 are pressed against the peripheral edge of the substrate W supported by the plurality of support pins 234.

  As in the case of the plurality of chuck pins 8 shown in FIG. 2, the holding pins are arranged in the circumferential direction (direction around the substrate rotation axis A <b> 1) at an interval around the peripheral edge of the spin chuck 5. By providing a plurality (at least three or more) of the above-described holding pins in the circumferential direction, the substrate W is held in a horizontal posture. Note that there is no correlation between the number of chuck pins 208 and the number of support pins 234, and it is only necessary that three or more of them are distributed almost uniformly in the circumferential direction.

  As shown in FIG. 7, the chuck pin 208 includes a base portion 33 that can rotate around the pin rotation axis A <b> 2 and a columnar grip portion 235 that extends upward from the base portion 33. The vertical center line L1 of the grip portion 235 is eccentric with respect to the pin rotation axis A2. The chuck pin 208 is moved around the pin rotation axis A2 between a closed position (the position shown in FIG. 7) where the grip portion 235 is pressed against the peripheral edge of the substrate W and an open position where the grip portion 235 is separated from the substrate W. It can be rotated with respect to the spin base 9. The chuck pin 208 is made of the above-described composite material that is softer than the substrate W and has chemical resistance and conductivity.

  As shown in FIG. 7, the spin chuck 5 includes a slit 242 that penetrates the grip portion 235 in the radial direction R1. When the chuck pin 208 is viewed from the inside in the radial direction R1, the slit 242 has a linear shape extending in a direction parallel to the substrate W. As shown in FIG. 8, the slit 242 has an annular horizontal cross section that surrounds the center portion 235 a of the grip portion 235. The slit 242 includes an annular opening that opens at the outer peripheral surface of the grip portion 235. The annular opening of the slit 242 is formed with an inlet 245 of the slit 242 located inward of the center line L1 of the grip portion 235 and an outlet 247 of the slit 242 positioned outward of the center line L1 of the grip portion 235. ing. The slit 242 includes an inlet 245 and an outlet 247 formed by the annular opening of the slit 242, and a passage 246 extending in the radial direction R <b> 1 from the inlet 245 to the outlet 247 through the inside of the grip portion 235.

As shown by a thick arrow in FIG. 8, a part of the processing liquid flowing outward on the substrate W enters the chuck pin 208 through the annular opening of the slit 242. The processing liquid that has entered the chuck pin 208 flows outward through the slit 242 and is discharged out of the chuck pin 208 through the annular opening of the slit 242. Further, the processing liquid that has entered the chuck pin 208 is blocked by the central portion 235a of the grip portion 235 and branches into two. As described above, a part of the processing liquid flowing on the substrate W toward the chuck pin 208 is guided to the outside of the chuck pin 208 by the slit 242 of the chuck pin 208, so that the case where the slit 242 is not provided. Also, the amount of mist is reduced.
<Third Embodiment>
Next, a third embodiment of the present invention will be described. In the third embodiment, a member that contacts the substrate and a member that holds the member are provided on the chuck pin.

FIG. 9 is a schematic view showing a vertical cross section of the chuck pin 308 according to the third embodiment of the present invention. In the following FIG. 9, the same components as those shown in FIGS. 1 to 8 are given the same reference numerals as those in FIG. 1 and the description thereof is omitted.
As shown in FIG. 9, the chuck pin 308 according to the third embodiment includes a contact member 349 that contacts the substrate W, a holding member 350 that holds the contact member 349, and a pin cover that covers the contact member 349 and the holding member 350. 348.

  As shown in FIG. 9, the contact member 349 includes a support portion 34 and a lower inclined surface 40. The pin cover 348 includes an upper inclined surface 39, an inner end surface 38, an upper surface 37, and an outer end surface 36. The holding member 350 includes a base portion 33 and a core portion 351 extending upward from the base portion 33. The core portion 351 is disposed outside the upper inclined surface 39 and the lower inclined surface 40. The pin cover 348 is disposed above the core part 351. The slit 42 is provided in the pin cover 348.

The contact member 349 is made of the above-described composite material that is softer than the substrate W and has chemical resistance and conductivity. The holding member 350 is made of a material harder than the contact member 349 and having chemical resistance and conductivity. When contact member 349 is formed of a composite material containing carbon and PFA, holding member 350 is formed of a conductive ceramic such as SiC (silicon carbide). The holding member 350 may be a carbon sintered body, or may be formed of a conductive ceramic other than SiC, such as zirconia (ZrO ₂ ).

  The pin cover 348 is made of a resin material that is softer than the substrate W and has chemical resistance. Specific examples of the resin included in the pin cover 348 are PTFE, ETFE (ethylene tetrafluoroethylene), and PEEK. Each of these resins is softer than the substrate W and has chemical resistance. The pin cover 348 is formed of white (including pure white and milky white) PTFE, and has a white outer surface. The outer surface of the contact member 349 is black because black carbon is contained in the contact member 349.

  As described above, in the third embodiment, since the contact member 349 and the pin cover 348 that are in contact with the substrate W are softer than the substrate W, it is possible to suppress or prevent the substrate W from being damaged. Moreover, since the core portion 351 of the holding member 350 that supports the contact member 349 and the pin cover 348 from the outside in the radial direction R1 is higher in rigidity than the contact member 349, the chuck pin 308 is gripping the substrate W. Deformation of the contact member 349 and the pin cover 348 can be effectively suppressed. Furthermore, since both the contact member 349 and the holding member 350 have conductivity, the electricity of the substrate W can be released from the contact member 349 to the holding member 350.

The contact member 349 and the holding member 350 correspond to a conductive portion formed of a conductive material. Since the conductive material contains carbon, the outer surfaces of the contact member 349 and the holding member 350 are blackish. The black contact member 349 and the holding member 350 easily absorb infrared rays from the infrared heater 28 (see FIG. 1). When the substrate W is gripped by the plurality of chuck pins 308, the contact member 349 and the holding member 350 are covered with the substrate W or the chuck pins 308 and cannot be seen in a plan view (in other words, the substrate W and the pin cover 348). Only visible). Therefore, the contact member 349 and the holding member 350 can be protected from the infrared heater 28. Thereby, the temperature rise of the contact member 349 and the holding member 350 can be suppressed.
<Other embodiments>
Although the description of the first to third embodiments of the present invention has been described above, the present invention is not limited to the contents of the above-described embodiments, and various modifications can be made within the scope of the present invention.

For example, in the above-described embodiment, the case where the horizontal opening 45a and the vertical opening 45b are provided at the entrance 45 of the slit 42 has been described, but the horizontal opening 45a or the vertical opening 45b may be omitted. Good.
In the above-described embodiment, the case where only a part of the vertical opening 45b is disposed above the gripping position has been described. However, the entire vertical opening 45b is disposed above the gripping position. It may be.

  In the above-described embodiment, the case where the height and width of the horizontal portion 43 of the slit 42 are constant from the inner end of the horizontal portion 43 to the outer end of the horizontal portion 43 has been described. At least one of the width and the width may increase or decrease stepwise or continuously as the outer end of the horizontal portion 43 is approached. The same applies to the height and width of the vertical portion 44 of the slit 42. That is, the opening area of the inlet 45 of the slit 42 may be equal to the opening area of the outlet 47 of the slit 42, or may be smaller or larger than the opening area of the outlet 47 of the slit 42.

In the above-described embodiment, the case where the entrance 45 of the slit 42 extends in the vertical direction or the horizontal direction has been described. However, at least a part of the entrance 45 of the slit 42 is inclined obliquely with respect to the vertical direction. May be.
In the above-described embodiment, the case where the inlet 45 of the slit 42 and the outlet 47 of the slit 42 are aligned in the radial direction R1 has been described. However, when the chuck pin 8 is viewed from the inside in the radial direction R1. All or part of the outlet 47 of the slit 42 may be shifted with respect to the inlet 45 of the slit 42.

In the above-described embodiment, the case where the upper surface of the grip portion 35 of the chuck pin 8 is horizontal has been described. However, the upper surface of the grip portion 35 may be inclined obliquely with respect to the horizontal plane, or may be stepped. There may be.
In the above-described embodiment, the case where the heat source for heating the processing liquid on the substrate W is the infrared heater 28 including the infrared lamp 29 has been described. However, a resistance heater including a heating wire that generates heat when energized, Alternatively, a blower that blows out hot hot air may be used as a heat source. In addition, the heat source may be omitted from the processing unit 2.

Moreover, although the above-mentioned embodiment demonstrated the case where the 1st chemical | medical solution nozzle 13, the 2nd chemical | medical solution nozzle 18, and the rinse liquid nozzle 23 were attached to the separate arm, the 1st chemical | medical solution nozzle 13, the 2nd chemical | medical solution Two or more of the nozzle 18 and the rinsing liquid nozzle 23 may be attached to a common arm.
In the above-described embodiment, the case where the infrared heater 28 is attached to the heater arm 31 has been described. However, the infrared heater 28 includes at least one of the first chemical liquid nozzle 13, the second chemical liquid nozzle 18, and the rinse liquid nozzle 23. It may be attached to an arm that holds one.

  In the above-described embodiment, the case where the chemical liquid is SPM and SC1 has been described. However, the chemical liquid may be a liquid other than SPM and SC1. For example, chemicals include sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, aqueous ammonia, hydrogen peroxide, organic acids (eg, citric acid, oxalic acid, etc.), organic alkalis (eg, TMAH: tetramethylammonium hydroxide, etc.) The liquid may contain at least one of a surfactant and a corrosion inhibitor.

In the above-described embodiment, the case where the rinse liquid is pure water has been described. However, the rinse liquid may be a liquid other than pure water. For example, the rinsing liquid may be carbonated water, electrolytic ion water, hydrogen water, ozone water, IPA (isopropyl alcohol), or hydrochloric acid water having a diluted concentration (for example, about 10 to 100 ppm).
In the above-described embodiment, the case where the substrate processing apparatus is an apparatus that processes a disk-shaped substrate has been described. However, the substrate processing apparatus may be an apparatus that processes a polygonal substrate.

  Further, two or more of all the embodiments described above may be combined.

1: substrate processing apparatus 5: spin chuck 8: chuck pin 12: spin motor 13: first chemical liquid nozzle (processing liquid supply means)
18: Second chemical liquid nozzle (processing liquid supply means)
23: Rinse liquid nozzle (treatment liquid supply means)
35: gripping part 42: slit 43: horizontal part 44: vertical part 45: inlet 45a: lateral opening 45b: vertical opening 46: passage 47: outlet 208: chuck pin 234: support pin 235: gripping part 242: slit 308 : Chuck pin 348: pin cover 349: contact member 350: holding member 351: core part A1: substrate rotation axis C1: circumferential direction R1: radial direction W: substrate

Claims (9)

A spin chuck that includes a chuck pin pressed against the peripheral edge of the substrate, and rotates the substrate around a vertical substrate rotation axis passing through a central portion of the substrate while holding the substrate in a horizontal posture using the chuck pin. ,
A processing liquid supply means for supplying a processing liquid to the substrate held by the spin chuck,
An inlet that is at least partially disposed above the upper surface of the substrate and that is visible when the chuck pins are viewed from the inside of the chuck pins in a radial direction perpendicular to the substrate rotation axis; A slit including an outlet disposed outward is provided in the chuck pin, and the inlet is formed in a direction around the substrate rotation axis when the chuck pin is viewed in a radial direction from the inside of the chuck pin. A substrate processing apparatus extending in a certain circumferential direction.   The substrate according to claim 1, wherein the inlet includes a lateral opening that extends in a circumferential direction when the chuck pin is viewed in a radial direction from the inside of the chuck pin and is disposed above the upper surface of the substrate. Processing equipment.   The substrate processing apparatus according to claim 1, wherein the inlet includes a vertical opening extending in a vertical direction, at least a portion of which is disposed above the upper surface of the substrate.   The substrate processing apparatus according to claim 3, wherein the vertical opening includes an upper end disposed above the upper surface of the substrate and a lower end disposed below the lower surface of the substrate.   The substrate processing apparatus according to claim 1, wherein at least a part of the outlet is aligned with the inlet in a radial direction.   The substrate processing apparatus according to claim 1, wherein at least a part of the inlet is disposed above the substrate so as to overlap the substrate in a plan view.   The substrate processing apparatus according to claim 1, wherein the chuck pin includes a conductive portion that contacts the substrate, and the conductive portion is formed of a conductive material having conductivity.   The substrate processing apparatus according to claim 7, wherein the conductive portion is covered with the substrate or the chuck pins in a plan view. The chuck pin includes a contact portion that is softer than the substrate pressed against the peripheral portion of the substrate, and a core portion that is harder than the contact portion disposed radially outward of the contact portion,
Each of the said contact part and a core part is a substrate processing apparatus as described in any one of Claims 1-8 currently formed with the electroconductive material which has electroconductivity.

Images