JP2010062403A - Manufacturing apparatus for semiconductor device - Google Patents

Manufacturing apparatus for semiconductor device Download PDF

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JP2010062403A
JP2010062403A JP2008227870A JP2008227870A JP2010062403A JP 2010062403 A JP2010062403 A JP 2010062403A JP 2008227870 A JP2008227870 A JP 2008227870A JP 2008227870 A JP2008227870 A JP 2008227870A JP 2010062403 A JP2010062403 A JP 2010062403A
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semiconductor substrate
outer peripheral
positioning pin
semiconductor device
front surface
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JP5073621B2 (en
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Toshifumi Kanbe
敏文 神戸
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Lapis Semiconductor Co Ltd
Lapis Semiconductor Miyazaki Co Ltd
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Oki Semiconductor Co Ltd
Oki Semiconductor Miyazaki Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a means for suppressing infiltration of etching liquid into a front surface side of a semiconductor substrate, with a simple structure. <P>SOLUTION: A manufacturing apparatus for a semiconductor device is equipped with: a rotating base stage which holds a semiconductor substrate in non-contact manner by the jetting gas jetted from a jetting opening toward the outside in radial direction of the semiconductor substrate; and a plurality of positioning pins which are provided to the rotating base stage to contact to the outer peripheral surface of the semiconductor substrate. A guide groove which guides the stream of the jetting gas to the outside in radial direction is provided on the outer peripheral surface of the positioning pin. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、半導体基板のおもて面を非接触で保持するベルヌーイチャック機構を有し、ベルヌーイチャック機構に保持された半導体基板の裏面をウェットエッチングにより加工する半導体装置の製造装置に関する。   The present invention relates to a semiconductor device manufacturing apparatus that has a Bernoulli chuck mechanism that holds a front surface of a semiconductor substrate in a non-contact manner, and that processes the back surface of the semiconductor substrate held by the Bernoulli chuck mechanism by wet etching.

一般に、現在のウェハプロセスにおいては、半導体基板の裏面に電極を形成する場合や半導体基板を薄板化する場合等における半導体基板の裏面加工は、グラインダによるバックグラインド時の損傷を防止するために、半導体基板の裏面をウェットエッチングにより加工している。
この場合のエッチングは、半導体基板のおもて面側に形成された配線パターン等の損傷を防止するために、ベルヌーイチャック機構により半導体基板のおもて面を非接触で保持して行われる。 In general, in the current wafer process, the back surface processing of a semiconductor substrate in the case of forming an electrode on the back surface of the semiconductor substrate or thinning the semiconductor substrate is performed by a semiconductor to prevent damage during back grinding by a grinder. The back surface of the substrate is processed by wet etching.
In this case, the etching is performed by holding the front surface of the semiconductor substrate in a non-contact manner by a Bernoulli chuck mechanism in order to prevent damage to the wiring pattern formed on the front surface side of the semiconductor substrate.

図３は従来のエッチング装置を示す断面図、図４は従来のエッチング装置を示す上面図、図５は図４の断面線Ａ−Ａに沿った断面を示す説明図である。
図３、図４において、１は半導体装置の製造装置としてのエッチング装置である。
２はバルク基板やＳＯＩ（Ｓｉｌｉｃｏｎ Ｏｎ Ｉｎｓｕｌａｔｏｒ）基板等の半導体基板であり、そのおもて面２ａには半導体装置３（図５参照）を構成する複数の半導体素子および配線パターン等が形成されている。 3 is a cross-sectional view showing a conventional etching apparatus, FIG. 4 is a top view showing the conventional etching apparatus, and FIG. 5 is an explanatory view showing a cross section taken along the cross-sectional line AA of FIG.
3 and 4, reference numeral 1 denotes an etching apparatus as a semiconductor device manufacturing apparatus.
Reference numeral 2 denotes a semiconductor substrate such as a bulk substrate or an SOI (Silicon On Insulator) substrate, and a plurality of semiconductor elements and wiring patterns constituting the semiconductor device 3 (see FIG. 5) are formed on the front surface 2a. Yes.

本説明で用いる半導体基板２の直径は、６インチである。
５は供給管であり、その供給口６が半導体基板２の裏面２ｂの中心部の上方に配置されており、半導体基板２の裏面２ｂをエッチングにより除去するための、流体としてのエッチング液を供給する。
１０はベルヌーイチャック機構の回転基台であり、流体としての窒素ガス（Ｎ２）等の噴出ガスを半導体基板２の半径方向外側に向かって、斜め上方に放射状に噴出させる円環状の噴出口１１が、半導体基板２の外周縁部の半径方向内側に設けられており、図示しないモータ等の駆動機構により矢印Ｂ方向に、３５０〜１０００ｒｐｍで回転する。 The diameter of the semiconductor substrate 2 used in this description is 6 inches.
Reference numeral 5 denotes a supply pipe, the supply port 6 of which is disposed above the central portion of the back surface 2b of the semiconductor substrate 2 and supplies an etching solution as a fluid for removing the back surface 2b of the semiconductor substrate 2 by etching. To do.
Reference numeral 10 denotes a rotating base of the Bernoulli chuck mechanism, and an annular jet port 11 for jetting a jet gas such as nitrogen gas (N 2 ) as a fluid radially outwardly in the radial direction of the semiconductor substrate 2. Is provided on the radially inner side of the outer peripheral edge of the semiconductor substrate 2 and is rotated at 350 to 1000 rpm in the arrow B direction by a driving mechanism such as a motor (not shown).

また、回転基台１０の回転軸１２には、回転している回転軸１２に外部から窒素ガスを供給するための、回転系と静止系との間をシールするメカニカルシール等を用いた図示しないガス供給機構が設けられている。
１３は位置決めピンであり、樹脂材料で形成された、外径φ１．５ｍｍ〜φ２ｍｍ、高さ２〜３ｍｍの円柱状部材であって、半導体基板２の外周面２ｃに接触させて複数配置されており、回転基台１０上に、ベルヌーイチャック機構によりおもて面２ａを非接触で保持された半導体基板２の位置ずれを防止する機能を有している。 Further, the rotary shaft 12 of the rotary base 10 is not shown using a mechanical seal or the like that seals between the rotating system and the stationary system for supplying nitrogen gas to the rotating rotating shaft 12 from the outside. A gas supply mechanism is provided.
Reference numeral 13 denotes a positioning pin, which is a cylindrical member made of a resin material and having an outer diameter of φ1.5 mm to φ2 mm and a height of 2 to 3 mm, and a plurality of them are arranged in contact with the outer peripheral surface 2 c of the semiconductor substrate 2. In addition, the semiconductor substrate 2 having the front surface 2a held in a non-contact manner by the Bernoulli chuck mechanism on the rotating base 10 has a function of preventing the positional deviation.

上記のエッチング装置１を用いて、半導体基板２の裏面２ｂをエッチングする場合は、半導体基板２のおもて面２ａを回転基台１０の保持面に対向させ、その外周面２ｃを位置決めピン１３により位置決めして回転基台１０上に載置し、回転基台１０の円環状の噴出口１１から、回転基台１０の保持面と半導体基板２のおもて面２ａとの間に窒素ガスを噴出させると、ベルヌーイの定理に従って、半導体基板２の噴出口１１から半径方向内側の中央領域は負圧となり、半導体基板２の半径方向外側に噴出する窒素ガスは半径の増加に伴って減速し、その圧力（静圧力）が回復して正圧となり、おもて面２ａの中央領域の負圧と外周縁部の正圧と裏面２ｂの大気圧との力のバランスによって、半導体基板２のおもて面２ａが回転基台１０上に非接触で保持される。   When the back surface 2b of the semiconductor substrate 2 is etched using the etching apparatus 1 described above, the front surface 2a of the semiconductor substrate 2 is opposed to the holding surface of the rotary base 10, and the outer peripheral surface 2c thereof is positioned with the positioning pins 13. And is placed on the rotary base 10, and a nitrogen gas is provided between the holding surface of the rotary base 10 and the front surface 2 a of the semiconductor substrate 2 from the annular spout 11 of the rotary base 10. In accordance with Bernoulli's theorem, the central region radially inward from the ejection port 11 of the semiconductor substrate 2 has a negative pressure, and the nitrogen gas ejected radially outward of the semiconductor substrate 2 decelerates as the radius increases. The pressure (static pressure) recovers to become positive pressure, and the balance between the negative pressure in the central region of the front surface 2a, the positive pressure in the outer peripheral edge portion, and the atmospheric pressure in the back surface 2b causes the balance of the semiconductor substrate 2 The front surface 2a is not on the rotating base 10. It is touching the hold.

そして、回転基台１０を回転させながら、回転している半導体基板２の中心部に、供給口６からエッチング液を滴下させると、図４に示すように、そのエッチング液は半導体基板２の裏面２ｂをエッチングしながら、相対系（回転している半導体基板２上に乗った状態をいう。）から見ると、エッチング液が遠心力によって半径方向外側に向かって放射状に膜の状態で拡がり、半導体基板２の外周端から半径方向外側に流出する。   Then, when the etching solution is dropped from the supply port 6 onto the center of the rotating semiconductor substrate 2 while rotating the rotary base 10, the etching solution is applied to the back surface of the semiconductor substrate 2 as shown in FIG. 4. When viewed from a relative system (referring to a state on the rotating semiconductor substrate 2) while etching 2b, the etching solution spreads radially outward in a film state due to centrifugal force, and the semiconductor It flows out from the outer peripheral edge of the substrate 2 radially outward.

このようにして、半導体基板２の裏面２ｂが、供給口６から供給される新たなエッチング液により連続的にエッチングされる。
この連続的なエッチングのときに、半導体基板２の外周端から外側に流出する膜状のエッチング液は、図５に示すように、位置決めピン１３に衝突して切り裂かれ、エッチング液の飛沫を発生させる。 In this way, the back surface 2b of the semiconductor substrate 2 is continuously etched by the new etching solution supplied from the supply port 6.
During this continuous etching, the film-like etching solution that flows out from the outer peripheral edge of the semiconductor substrate 2 collides with the positioning pins 13 and is cut as shown in FIG. Let

このとき発生した飛沫は、その慣性力により主には位置決めピン１３の外周面に沿って半導体基板２の半径方向外側に飛散し、窒素ガスの気流に乗って外部に導かれるが、位置決めピン１３への衝突により運動エネルギを失った飛沫は、一部は位置決めピン１３の外周面に付着した状態で、他は位置決めピン１３の近傍に浮遊した状態で滞留する。
一方、噴出口１１から噴出させた窒素ガスは、回転基台１０の保持面と半導体基板２のおもて面２ａとの間に導かれて半径方向外側に向かって放射状に流れ、半導体基板２の外周端を過ぎた後に、噴出口１１から斜め上方に噴出したときの上方に向かう速度成分により、大部分は半径方向外側に向かって斜め上方に流れていく。 Splashes generated at this time are mainly scattered to the outside of the semiconductor substrate 2 in the radial direction along the outer peripheral surface of the positioning pin 13 due to the inertial force, and are guided to the outside by riding on a nitrogen gas stream. Part of the droplets that have lost their kinetic energy due to the collision with them stays in a state of adhering to the outer peripheral surface of the positioning pin 13 and the other in the state of floating near the positioning pin 13.
On the other hand, the nitrogen gas ejected from the ejection port 11 is guided between the holding surface of the rotary base 10 and the front surface 2a of the semiconductor substrate 2, and flows radially outward in the radial direction. After passing the outer peripheral edge of the nozzle, most of the fluid flows obliquely upward toward the outside in the radial direction due to the upward velocity component when jetting obliquely upward from the jet outlet 11.

また、位置決めピン１３の近傍を通過する窒素ガスは、円柱状の位置決めピン１３の外周面に沿って回り込み、位置決めピン１３の外周面に付着したエッチング液を吹き飛ばしながら半導体基板２の半径方向外側に向かって斜め上方に流れていくが、位置決めピン１３に衝突して塞き止められた窒素ガスは、半径方向の速度成分を失った状態で、上方に向かう速度成分により位置決めピン１３に沿って上方へ向かい、半導体基板２の外周縁部に半径方向内側に向かう渦流を発生させる。   Further, the nitrogen gas passing near the positioning pin 13 wraps around the outer peripheral surface of the cylindrical positioning pin 13 and blows away the etching solution adhering to the outer peripheral surface of the positioning pin 13 to the outside in the radial direction of the semiconductor substrate 2. The nitrogen gas that has flowed obliquely upward is blocked by colliding with the positioning pin 13 and lost along with the positioning pin 13 due to the upward velocity component in a state where the velocity component in the radial direction has been lost. Then, a vortex flow is generated at the outer peripheral edge of the semiconductor substrate 2 inward in the radial direction.

この位置決めピン１３との衝突により生じた渦流に乗って、位置決めピン１３の近傍に浮遊した状態で滞留しているエッチング液の飛沫が、半導体基板２のおもて面２ａ側に巻き込まれ、主に半導体基板２のおもて面２ａの外周縁部の位置決めピン１３の近傍に付着し、半導体基板２の外周縁部を過剰にエッチングして、半導体基板２にクラックを発生させる要因になるという問題がある。   The droplets of the etchant staying in the state of floating in the vicinity of the positioning pin 13 riding on the vortex generated by the collision with the positioning pin 13 are wound on the front surface 2a side of the semiconductor substrate 2, It adheres to the vicinity of the positioning pins 13 on the outer peripheral edge of the front surface 2a of the semiconductor substrate 2 and causes excessive etching of the outer peripheral edge of the semiconductor substrate 2 to cause cracks in the semiconductor substrate 2. There's a problem.

また、半導体基板２のおもて面２ａ側に巻き込まれたエッチング液の飛沫の一部は、半導体基板２のおもて面２ａの他の部位にも付着し、エッチング液が付着した部位に形成された配線パターン等がエッチングされ、外観異常や配線パターン不良による半導体装置３の歩留りの低下や信頼性の低下を生じさせるという問題がある。
上記のような、ベルヌーイチャック機構を用いたエッチング装置における、エッチング液の半導体基板のおもて面への付着を防止するために、従来のベルヌーイチャック機構を用いたエッチング装置は、上記と同様のベルヌーイチャック機構の回転基台の円環状の噴出口と、回転基台に立設された複数の円柱状の位置決めピンとの間に、位置決めピンに向けてエアジェットを吹き付けるノズルを設け、このノズルから吹き付けられるエアジェットにより、半導体基板に裏面の端部から半導体基板のおもて面と回転基台との間に流れ込もうとするエッチング液を吹き飛ばして、半導体基板のおもて面の位置決めピンの近傍に形成されるピンマークの発生を防止している（例えば、特許文献１参照。）。 In addition, some of the droplets of the etching solution caught on the front surface 2a side of the semiconductor substrate 2 also adhere to other parts of the front surface 2a of the semiconductor substrate 2, and the etching solution adheres to the part. There is a problem that the formed wiring pattern or the like is etched to cause a decrease in yield or reliability of the semiconductor device 3 due to an appearance abnormality or a wiring pattern defect.
In order to prevent the etching liquid from adhering to the front surface of the semiconductor substrate in the etching apparatus using the Bernoulli chuck mechanism as described above, the conventional etching apparatus using the Bernoulli chuck mechanism is similar to the above. A nozzle that blows an air jet toward the positioning pin is provided between the annular outlet of the rotating base of the Bernoulli chuck mechanism and a plurality of columnar positioning pins standing on the rotating base. An air jet blown blows away the etching solution that flows between the front surface of the semiconductor substrate and the rotating base from the end of the back surface of the semiconductor substrate, and positioning pins on the front surface of the semiconductor substrate. The generation of pin marks formed in the vicinity of is prevented (see, for example, Patent Document 1).

また、同様の構成のベルヌーイチャックの回転基台の外周縁部に、半導体基板の外周縁部に対向する段差部を設け、半導体基板に裏面の端部から半導体基板のおもて面と回転基台との間に流れ込むエッチング液を、半導体基板のおもて面の外周縁部に制限して、半導体基板のおもて面に生ずるエッチングむらを低減しているものもある（例えば、特許文献２参照。）。   In addition, a stepped portion facing the outer peripheral edge of the semiconductor substrate is provided on the outer peripheral edge of the rotating base of the Bernoulli chuck having the same configuration, and the front surface of the semiconductor substrate and the rotating base are formed on the semiconductor substrate from the end on the back surface. The etching liquid flowing between the base and the semiconductor substrate is limited to the outer peripheral edge of the front surface of the semiconductor substrate to reduce the etching unevenness generated on the front surface of the semiconductor substrate (for example, Patent Documents). 2).

更に、円盤状の回転ステージに設けられた支持ピンにより半導体基板の裏面を支持させ、規制ピンにより外周面を位置決めした半導体基板を回転させながら、そのおもて面にレジスト液を塗布してレジスト膜を形成した後に、不要となった外周縁部のレジスト膜を溶剤からなるリンス液により除去するときに、リンス液を供給するリンスノズルに設けた、リンス液の飛沫を遮る遮蔽部材により、規制ピンに衝突したリンス液のレジスト膜上への跳ね返りを防止しているものもある（例えば、特許文献３参照。）。   Further, the back surface of the semiconductor substrate is supported by a support pin provided on a disk-shaped rotary stage, and a resist solution is applied to the front surface while rotating the semiconductor substrate with the outer peripheral surface positioned by a regulation pin. After the film is formed, when the resist film on the outer peripheral edge that is no longer needed is removed with a rinsing liquid made of a solvent, a restriction is provided by a shielding member provided on the rinsing nozzle that supplies the rinsing liquid to block the spray of the rinsing liquid There is also one that prevents the rinse liquid colliding with the pins from rebounding onto the resist film (see, for example, Patent Document 3).

更に、回転ステージ上の半導体基板を回転させながらレジスト液を塗布するスピン方式塗膜装置において、ステージ上面からアウターカップの内縁開口部までの高さをｈとし、その開口部の直径をｗとしたときに、これらの比率ｈ／ｗを０．０１以上、０．０２以下として、レジスト液のミストの半導体基板上への再付着、およびアウターカップの外部への飛散を防止しているものもある（例えば、特許文献４参照。）。
特開２０００-２０８４７７号公報（段落０００２−００２４、第１図） 特開平９−１８１０２６号公報（主に段落００２３−００２９、第１図） 特開平１１−１８６１３８号公報（主に段落００２４−００３０、第３図） 特開平９−９４５１３号公報（主に段落００３１−００３４、第１図） Furthermore, in the spin coating film apparatus that applies the resist solution while rotating the semiconductor substrate on the rotary stage, the height from the stage upper surface to the inner edge opening of the outer cup is h, and the diameter of the opening is w. In some cases, the ratio h / w is set to 0.01 or more and 0.02 or less to prevent the mist of the resist solution from re-adhering on the semiconductor substrate and scattering of the outer cup to the outside. (For example, refer to Patent Document 4).
JP 2000-208477 (paragraphs 0002-0024, FIG. 1) JP-A-9-181026 (mainly paragraphs 0023-0029, FIG. 1) JP-A-11-186138 (mainly paragraphs 0024-0030, FIG. 3) Japanese Patent Laid-Open No. 9-94513 (mainly paragraphs 0031-0034, FIG. 1)

しかしながら、上述した特許文献１の技術においては、ベルヌーイチャック機構を構成する回転基台に、円環状の噴出口とは別に、位置決めピンにエアジェットを吹き付けるノズルを設けているため、回転基台にエアジェット用の新たなノズルを設け、新たに設けたノズルに外部からエアを供給するエア供給機構を新たに追加する必要があり、エッチング装置の構造が複雑になると共に、現行のエッチング装置の改造に時間を要するという問題がある。   However, in the technique of Patent Document 1 described above, a nozzle that blows an air jet on a positioning pin is provided on the rotating base that constitutes the Bernoulli chuck mechanism, in addition to the annular spout. It is necessary to add a new nozzle for air jet, and to add a new air supply mechanism that supplies air from the outside to the newly installed nozzle, making the structure of the etching apparatus complicated and remodeling the current etching apparatus There is a problem that it takes time.

本発明は、上記の問題点を解決するためになされたもので、簡素な構造で、半導体基板のおもて面側へのエッチング液の巻き込みを抑制する手段を提供することを目的とする。   The present invention has been made to solve the above-described problems, and an object of the present invention is to provide means for suppressing the entrainment of an etching solution on the front surface side of a semiconductor substrate with a simple structure.

本発明は、上記課題を解決するために、半導体基板を、噴出口から前記半導体基板の半径方向外側に向けて噴出させた噴出ガスにより非接触で保持する回転基台と、前記回転基台に設けられ、前記半導体基板の外周面に接触する複数の位置決めピンとを備えた半導体装置の製造装置において、前記位置決めピンの外周面に、前記噴出ガスの流れを半径方向外側に案内する案内溝を設けたことを特徴とする。   In order to solve the above-described problem, the present invention provides a rotary base that holds a semiconductor substrate in a non-contact manner by a jet gas jetted from a jet port toward the radially outer side of the semiconductor substrate, and the rotary base. In a semiconductor device manufacturing apparatus provided with a plurality of positioning pins that are in contact with the outer peripheral surface of the semiconductor substrate, a guide groove for guiding the flow of the ejected gas radially outward is provided on the outer peripheral surface of the positioning pin. It is characterized by that.

これにより、本発明は、案内溝で半導体基板のおもて面を非接触で保持するための噴出ガスを案内して、半導体基板の外周縁部の位置決めピンの近傍に生ずる半径方向内側に向かう渦流の発生を簡素な構造で抑制することができ、半導体基板のおもて面側へ巻き込まれるエッチング液の量を大幅に低減して、半導体基板の外周縁部の過剰エッチングによるクラックの発生を抑制することができると共に、半導体基板に形成した半導体装置の外観異常や配線パターン不良による歩留りの低下や信頼性の低下を防止することができるという効果が得られる。   As a result, the present invention guides the ejected gas for holding the front surface of the semiconductor substrate in a non-contact manner by the guide groove, and goes inward in the radial direction generated in the vicinity of the positioning pin at the outer peripheral edge of the semiconductor substrate. The generation of eddy currents can be suppressed with a simple structure, and the amount of etching solution that is trapped on the front side of the semiconductor substrate can be greatly reduced, resulting in the occurrence of cracks due to excessive etching of the outer peripheral edge of the semiconductor substrate. In addition to being able to be suppressed, it is possible to obtain an effect that it is possible to prevent a decrease in yield and a decrease in reliability due to an appearance abnormality of a semiconductor device formed on a semiconductor substrate or a wiring pattern defect.

以下に、図面を参照して本発明による半導体装置の製造装置の実施例について説明する。   Embodiments of a semiconductor device manufacturing apparatus according to the present invention will be described below with reference to the drawings.

図１は実施例のエッチング装置の部分断面を示す説明図である。
なお、上記図３ないし図５と同様の部分は、同一の符号を付してその説明を省略する。また図１は図５と同様の断面で示してある。
図１において、２０は位置決めピンであり、その外周面には、三角状の断面形状を有する円環溝である案内溝２１が、その溝筋を半導体基板２の裏面２ｂと平行にして複数形成されており、上記した円柱状の位置決めピン１３と同様の材料および外形寸法（外径および高さ）で形成されている。 FIG. 1 is an explanatory view showing a partial cross section of an etching apparatus according to an embodiment.
The parts similar to those in FIGS. 3 to 5 are given the same reference numerals and the description thereof is omitted. 1 is shown in the same cross section as FIG.
In FIG. 1, reference numeral 20 denotes a positioning pin, and a plurality of guide grooves 21, which are annular grooves having a triangular cross-sectional shape, are formed on the outer peripheral surface thereof so that the groove lines are parallel to the back surface 2 b of the semiconductor substrate 2. It is made of the same material and outer dimensions (outer diameter and height) as the above-described columnar positioning pin 13.

また、本実施例の位置決めピン２０は、互いに隣接する２つの案内溝２１で形成される山部の外周部に、半導体基板２の外周面２ｃを接触させて配置されており、半導体基板２を回転基台１０上に位置決めすると共に、外周面に形成された案内溝２１により、流体であるエッチング液および窒素ガスの流れを半導体基板２の半径方向外側へ案内する機能を有している。   Further, the positioning pin 20 of the present embodiment is disposed with the outer peripheral surface 2c of the semiconductor substrate 2 in contact with the outer peripheral portion of the crest formed by the two guide grooves 21 adjacent to each other. In addition to positioning on the rotary base 10, the guide groove 21 formed on the outer peripheral surface has a function of guiding the flow of etching liquid and nitrogen gas, which are fluids, to the outside in the radial direction of the semiconductor substrate 2.

このような外周面に案内溝２１を形成した位置決めピン２０の作用について、図２を用いて説明する。
なお、以下に示す流れの状態は、上記と同様に相対系から見た場合の流れの状態を用いて説明する。
上記した連続的なエッチングのときに、半導体基板２の外周端から外側に流出する膜状のエッチング液は、図２に示すように、位置決めピン２０に衝突して切り裂かれ、エッチング液の飛沫を発生させる。 The operation of the positioning pin 20 having the guide groove 21 formed on the outer peripheral surface will be described with reference to FIG.
In addition, the flow state shown below is demonstrated using the flow state at the time of seeing from a relative system similarly to the above.
During the above-described continuous etching, the film-like etching solution that flows out from the outer peripheral edge of the semiconductor substrate 2 collides with the positioning pins 20 and is cut as shown in FIG. generate.

このとき発生した飛沫は、その慣性力により主には位置決めピン２０の案内溝２１に導かれて半導体基板２の半径方向外側に飛散し、窒素ガスの気流に乗って外部に導かれる。
また、位置決めピン２０への衝突により運動エネルギを失った飛沫は、一部は位置決めピン２０の案内溝２１に付着した状態で、他は位置決めピン２０の近傍に浮遊した状態で滞留する。 The droplets generated at this time are mainly guided to the guide groove 21 of the positioning pin 20 due to the inertial force, scattered to the outside in the radial direction of the semiconductor substrate 2, and are guided to the outside by riding on a nitrogen gas flow.
Further, the droplets that have lost their kinetic energy due to the collision with the positioning pins 20 are partly attached to the guide grooves 21 of the positioning pins 20 and the others remain in the state of floating near the positioning pins 20.

一方、噴出口１１から噴出させた窒素ガスは、回転基台１０の保持面と半導体基板２のおもて面２ａとの間に導かれて半径方向外側に向かって放射状に流れ、半導体基板２の外周端を過ぎた後に、噴出口１１から斜め上方に噴出したときの上方に向かう速度成分により、大部分は半径方向外側に向かって斜め上方に流れていく。
また、位置決めピン２０の近傍を通過する窒素ガスは、位置決めピン２０の外周面に形成された案内溝２１に沿って、位置決めピン２０の案内溝２１に付着したエッチング液を吹き飛ばしながら更に半径方向外側に導かれ、位置決めピン２０を回り込んだ後に、半導体基板２の半径方向外側に向かって斜め上方に流れていく。 On the other hand, the nitrogen gas ejected from the ejection port 11 is guided between the holding surface of the rotary base 10 and the front surface 2a of the semiconductor substrate 2, and flows radially outward in the radial direction. After passing through the outer peripheral edge of the nozzle, most of the fluid flows diagonally upward toward the outside in the radial direction due to the upward velocity component when jetting obliquely upward from the jet outlet 11.
Further, the nitrogen gas passing in the vicinity of the positioning pin 20 blows away the etching solution adhering to the guide groove 21 of the positioning pin 20 along the guide groove 21 formed on the outer peripheral surface of the positioning pin 20, and further radially outward. Then, after wrapping around the positioning pin 20, it flows obliquely upward toward the outside in the radial direction of the semiconductor substrate 2.

位置決めピン２０に衝突して塞き止められた窒素ガスは、本実施例の位置決めピン２０の外周面に形成された円環状の案内溝２１によって上方への移動が妨げられるため、半導体基板２の外周縁部の位置決めピン２０の近傍に生ずる半径方向内側に向かう渦流の発生が抑制され、位置決めピン２０の近傍に浮遊した状態で滞留しているエッチング液の飛沫は、半導体基板２のおもて面２ａ側に巻き込まれ難くなり、上記した位置決めピン２０周りの窒素ガスの流れに乗って半導体基板２の半径方向外側に向かって斜め上方に流れていく。   The nitrogen gas that has been blocked by colliding with the positioning pin 20 is prevented from moving upward by the annular guide groove 21 formed on the outer peripheral surface of the positioning pin 20 of this embodiment. Generation of a vortex flowing inward in the radial direction generated in the vicinity of the positioning pin 20 in the outer peripheral edge portion is suppressed, and the droplets of the etching solution staying in the vicinity of the positioning pin 20 are scattered on the surface of the semiconductor substrate 2. It becomes difficult to be caught on the surface 2a side, and flows obliquely upward toward the outer side in the radial direction of the semiconductor substrate 2 along the flow of the nitrogen gas around the positioning pin 20 described above.

これにより、半導体基板２のおもて面２ａの外周縁部の位置決めピン２０の近傍に付着するエッチング液の飛沫の量を大幅に低減して、半導体基板２の外周縁部の過剰エッチングによるクラックの発生を抑制することができると共に、半導体基板２のおもて面２ａの他の部位に付着するエッチング液の飛沫の量を大幅に低減して、外観異常や配線パターン不良による半導体装置３の歩留りの低下や信頼性の低下を防止することができる。   As a result, the amount of droplets of the etching solution adhering to the vicinity of the positioning pins 20 on the outer peripheral edge of the front surface 2a of the semiconductor substrate 2 is greatly reduced, and cracks due to excessive etching of the outer peripheral edge of the semiconductor substrate 2 are achieved. Of the semiconductor device 3 due to abnormal appearance or defective wiring pattern, by significantly reducing the amount of droplets of the etching solution adhering to other parts of the front surface 2a of the semiconductor substrate 2. A decrease in yield and a decrease in reliability can be prevented.

また、本実施例の案内溝２１を形成した位置決めピン２０は、従来の位置決めピン１３と同様の外形形状に形成されているので、新たな機構を追加することなく、簡素な構造で半導体基板２のおもて面２ａ側へのエッチング液の巻き込みを防止することができ、現行のエッチング装置の改造を容易にして、半導体装置３の歩留りや信頼性を向上させたエッチング装置を早期に立ち上げることができる。   Further, since the positioning pin 20 having the guide groove 21 of the present embodiment is formed in the same outer shape as the conventional positioning pin 13, the semiconductor substrate 2 has a simple structure without adding a new mechanism. Etching liquid can be prevented from getting into the front surface 2a side, the existing etching apparatus can be easily remodeled, and an etching apparatus that improves the yield and reliability of the semiconductor device 3 can be started at an early stage. be able to.

更に、本実施例の案内溝２１は、三角状の断面形状を有しているので、案内溝２１に付着したエッチング液を、自重により回転基台１０の方向に容易に流下させることができ、案内溝２１に沿って、半径方向外側に導かれながら位置決めピン２０周りの窒素ガスの流れの方向に、エッチング液を容易に導くことができる。
なお、本実施例では、案内溝２１は、溝筋を半導体基板２の裏面２ｂと平行に形成した三角状の断面形状を有する円環溝であるとして説明したが、溝筋を螺旋状に形成した三角状の断面形状を有する螺旋溝、つまりねじ形状の溝であってもよい。 Furthermore, since the guide groove 21 of the present embodiment has a triangular cross-sectional shape, the etching solution adhering to the guide groove 21 can easily flow down in the direction of the rotating base 10 by its own weight. The etching solution can be easily guided in the direction of the flow of nitrogen gas around the positioning pin 20 while being guided radially outward along the guide groove 21.
In this embodiment, the guide groove 21 has been described as an annular groove having a triangular cross-sectional shape in which the groove is formed in parallel with the back surface 2b of the semiconductor substrate 2, but the groove is formed in a spiral shape. A spiral groove having a triangular cross-sectional shape, that is, a screw-shaped groove may be used.

この場合に、螺旋溝のリード角（＝ｔａｎ−１（螺旋溝のピッチ／（π×位置決めピンの外径）））が、２度〜４度の範囲となるように形成するとよい。
このようにすれば、円環溝の場合と同様の効果に加えて、案内溝２１に付着したエッチング液を、回転基台１０の方向に更に容易に流下させることができる。
以上説明したように、本実施例では、半導体基板のおもて面を非接触で保持するベルヌーイチャック機構の回転基台に設けられた位置決めピンの外周面に、流体の流れを案内する案内溝を設けたことによって、案内溝で半導体基板のおもて面を非接触で保持するための噴出ガス（本実施例では、窒素ガス）を案内して、半導体基板の外周縁部の位置決めピンの近傍に生ずる半径方向内側に向かう渦流の発生を簡素な構造で抑制することができ、半導体基板のおもて面側へ巻き込まれるエッチング液の量を大幅に低減して、半導体基板の外周縁部の過剰エッチングによるクラックの発生を抑制することができると共に、半導体基板に形成した半導体装置の外観異常や配線パターン不良による歩留りの低下や信頼性の低下を防止することができる。 In this case, the lead angle of the spiral groove (= tan −1 (pitch of the spiral groove / (π × outer diameter of the positioning pin))) may be formed to be in the range of 2 degrees to 4 degrees.
In this way, in addition to the same effect as in the case of the annular groove, the etching solution adhering to the guide groove 21 can flow down more easily in the direction of the rotating base 10.
As described above, in this embodiment, the guide groove that guides the fluid flow to the outer peripheral surface of the positioning pin provided on the rotating base of the Bernoulli chuck mechanism that holds the front surface of the semiconductor substrate in a non-contact manner. By providing the guide gas, a guide gas (nitrogen gas in the present embodiment) for holding the front surface of the semiconductor substrate in a non-contact manner is guided, and the positioning pins on the outer peripheral edge of the semiconductor substrate are guided. It is possible to suppress the generation of a vortex flowing inward in the vicinity in the radial direction with a simple structure, greatly reducing the amount of the etching solution entrapped on the front surface side of the semiconductor substrate, and the outer peripheral edge portion of the semiconductor substrate. It is possible to suppress the occurrence of cracks due to excessive etching of the semiconductor, and to prevent a decrease in yield and a decrease in reliability due to abnormal appearance of the semiconductor device formed on the semiconductor substrate or a defective wiring pattern.

実施例のエッチング装置の部分断面を示す説明図Explanatory drawing which shows the partial cross section of the etching apparatus of an Example 実施例のエッチング装置の作用を示す説明図Explanatory drawing which shows the effect | action of the etching apparatus of an Example 従来のエッチング装置の断面を示す説明図Explanatory drawing which shows the cross section of the conventional etching apparatus 従来のエッチング装置の上面を示す説明図Explanatory drawing showing the top surface of a conventional etching apparatus 図４の断面線Ａ−Ａに沿った断面を示す説明図Explanatory drawing which shows the cross section along sectional line AA of FIG.

符号の説明Explanation of symbols

１ エッチング装置
２ 半導体基板
２ａ おもて面
２ｂ 裏面
２ｃ 外周面
３ 半導体装置
５ 供給管
６ 供給口
１０ 回転基台
１１ 噴出口
１２ 回転軸
１３、２０ 位置決めピン
２１ 案内溝 DESCRIPTION OF SYMBOLS 1 Etching device 2 Semiconductor substrate 2a Front surface 2b Back surface 2c Outer peripheral surface 3 Semiconductor device 5 Supply pipe 6 Supply port 10 Rotating base 11 Jet port 12 Rotating shaft 13, 20 Positioning pin 21 Guide groove 21

Claims (4)

半導体基板を、噴出口から前記半導体基板の半径方向外側に向けて噴出させた噴出ガスにより非接触で保持する回転基台と、前記回転基台に設けられ、前記半導体基板の外周面に接触する複数の位置決めピンとを備えた半導体装置の製造装置において、
前記位置決めピンの外周面に、前記噴出ガスの流れを半径方向外側に案内する案内溝を設けたことを特徴とする半導体装置の製造装置。 A rotary base that holds the semiconductor substrate in a non-contact manner by a jet gas jetted from a jet port toward the outside in the radial direction of the semiconductor substrate, and a rotary base that is provided on the rotary base and that contacts the outer peripheral surface of the semiconductor substrate In a semiconductor device manufacturing apparatus including a plurality of positioning pins,
An apparatus for manufacturing a semiconductor device, characterized in that a guide groove for guiding the flow of the ejected gas radially outward is provided on an outer peripheral surface of the positioning pin. 請求項１において、
前記回転基台は、前記半導体基板のおもて面を保持することを特徴とする半導体装置の製造装置。 In claim 1,
The apparatus for manufacturing a semiconductor device, wherein the rotating base holds a front surface of the semiconductor substrate. 請求項１または請求項２において、
前記案内溝が、三角状の断面形状を有する円環溝であることを特徴とする半導体装置の製造装置。 In claim 1 or claim 2,
The semiconductor device manufacturing apparatus, wherein the guide groove is an annular groove having a triangular cross-sectional shape. 請求項１または請求項２において、
前記案内溝が、三角状の断面形状を有する螺旋溝であることを特徴とする半導体装置の製造装置。 In claim 1 or claim 2,
The semiconductor device manufacturing apparatus, wherein the guide groove is a spiral groove having a triangular cross-sectional shape.
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KR101994423B1 (en) * 2016-12-27 2019-07-01 세메스 주식회사 Substrate treating apparatus
KR20180076072A (en) * 2016-12-27 2018-07-05 세메스 주식회사 Substrate treating apparatus
KR102716279B1 (en) * 2017-02-22 2024-10-14 주식회사 케이씨텍 Rinsing and drying device
KR20190060741A (en) * 2019-05-24 2019-06-03 세메스 주식회사 Substrate treating apparatus
KR102099883B1 (en) * 2019-05-24 2020-04-13 세메스 주식회사 Substrate treating apparatus
CN112289736A (en) * 2020-11-04 2021-01-29 华虹半导体(无锡)有限公司 Fixing device for cleaning back of wafer
CN113108715A (en) * 2021-04-13 2021-07-13 南京中安半导体设备有限责任公司 Suspended matter measuring device and air floatation chuck
CN113108715B (en) * 2021-04-13 2024-01-23 南京中安半导体设备有限责任公司 Suspension measuring device and air floating chuck

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