JPH0225501B2 - - Google Patents
Info
- Publication number
- JPH0225501B2 JPH0225501B2 JP56115030A JP11503081A JPH0225501B2 JP H0225501 B2 JPH0225501 B2 JP H0225501B2 JP 56115030 A JP56115030 A JP 56115030A JP 11503081 A JP11503081 A JP 11503081A JP H0225501 B2 JPH0225501 B2 JP H0225501B2
- Authority
- JP
- Japan
- Prior art keywords
- vapor
- developer
- development
- supply nozzle
- developing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000007788 liquid Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- 239000007921 spray Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【発明の詳細な説明】
本発明はフオトレジスト現像方法および装置に
関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a photoresist developing method and apparatus.
従来、半導体製品の製造過程におけるフオトレ
ジスト現像方式としては、第１図ａに示すように
現像液１を収容した現像槽２の中にウエハ３を浸
漬するデイツプ現像方式、第１図ｂに示すように
ウエハ３を回転させながらスプレーノズル４によ
り現像液１をウエハ３上に供給するスプレー現像
方式等が提案されている。 Conventionally, photoresist development methods used in the manufacturing process of semiconductor products include a dip development method in which a wafer 3 is immersed in a developer tank 2 containing a developer 1 as shown in FIG. 1a, and a dip development method as shown in FIG. 1b. A spray developing method has been proposed in which the developing solution 1 is supplied onto the wafer 3 using the spray nozzle 4 while the wafer 3 is rotated.
しかしながら、特にポジ型レジストの現像にお
いては、前者は現像中のウエハに異物が付着する
という問題がある一方、後者はレジストのはがれ
が生じるという問題がある。 However, particularly when developing a positive resist, the former has a problem in that foreign matter adheres to the wafer during development, while the latter has a problem in that the resist peels off.
本発明の目的は、フオトレジストの現像におい
て、現像物質を気相でウエハ面に供給することに
よりウエハ全面での均一な現像を行なうことにあ
る。 An object of the present invention is to perform uniform development over the entire surface of a wafer by supplying a developing substance to the wafer surface in a vapor phase during photoresist development.
この目的を達成するために、本発明は水蒸気ま
たはキヤリア蒸気と現像剤の蒸気とを別々に供給
するノズルを持ち、チヤンバー内でこれらを混合
し、現像を行なうフオトレジスト現像方法および
装置よりなる。 To achieve this object, the present invention comprises a photoresist developing method and apparatus that has a nozzle that separately supplies water vapor or carrier vapor and developer vapor, and that mixes them in a chamber to perform development.
以下、本発明を図面に示す一実施例にしたがつ
てさらに詳細に説明する。 Hereinafter, the present invention will be explained in more detail according to an embodiment shown in the drawings.
第２図は本発明の一実施例によるフオトレジス
ト現像装置を示す概略断面図である。 FIG. 2 is a schematic cross-sectional view showing a photoresist developing apparatus according to an embodiment of the present invention.
本実施例の装置は水蒸気またはキヤリア蒸気５
を現像チヤンバ６の中に供給する水蒸気またはキ
ヤリア蒸気供給ノズル７と、現像剤の蒸気８を現
像チヤンバ６の中に供給する現像剤蒸気供給ノズ
ル９とを有している。また、両ノズル７と９とに
は、蒸気の供給流量を調整するための流量調整弁
１０と１１がそれぞれ設けられている。両ノズル
７と９との間には、現像を停止させるためにリン
ス液１３を供給するリンス液供給ノズル１２が設
けられている。 The device of this embodiment is water vapor or carrier vapor.
a water vapor or carrier vapor supply nozzle 7 for supplying developer vapor 8 into the developer chamber 6; and a developer vapor supply nozzle 9 for supplying developer vapor 8 into the developer chamber 6. Further, both nozzles 7 and 9 are provided with flow rate adjustment valves 10 and 11, respectively, for adjusting the supply flow rate of steam. A rinsing liquid supply nozzle 12 is provided between the nozzles 7 and 9 to supply a rinsing liquid 13 to stop development.
次に、本実施例の作用について説明する。 Next, the operation of this embodiment will be explained.
現像を行う場合、水蒸気またはキヤリア蒸気供
給ノズル７から水蒸気またはキヤリア蒸気、また
現像剤供給ノズル９から現像剤の蒸気をそれぞれ
現像チヤンバ６の中に供給する。これらの蒸気は
現像チヤンバ６内で互いに混合され、ウエハチヤ
ツク１４上に保持されたウエハ３上のレジスト表
面に均一に付着し、レジストの現像を行う。水蒸
気またはキヤリア蒸気と現像剤の蒸気との混合比
は流量調整弁１０と１１の調整により最適な現像
を得るよう調整可能である。 When developing, water vapor or carrier vapor is supplied from the water vapor or carrier vapor supply nozzle 7, and developer vapor is supplied from the developer supply nozzle 9 into the development chamber 6, respectively. These vapors are mixed with each other in the developing chamber 6 and uniformly adhere to the resist surface on the wafer 3 held on the wafer chuck 14, thereby developing the resist. The mixing ratio of water vapor or carrier vapor and developer vapor can be adjusted by adjusting flow rate regulating valves 10 and 11 to obtain optimum development.
現像を停止させたい場合、リンス液供給ノズル
１２からリンス液１３を供給すればよい。 If it is desired to stop the development, the rinsing liquid 13 may be supplied from the rinsing liquid supply nozzle 12.
なお、必要であれば、ウエハチヤツク１４の回
転により、ウエハ３を現像中に回転させてもよ
い。また、現像の均一性をより良好にするために
ノズル７，９を複数本ずつ配置してもよい。 Note that, if necessary, the wafer 3 may be rotated during development by rotating the wafer chuck 14. Further, in order to improve the uniformity of development, a plurality of nozzles 7 and 9 may be arranged.
以上説明したように、本発明によれば、現像物
質を気相で供給するので、現像時にレジストに異
物が付着したり、レジストのはがれを起こすこと
がなく、歩留りの向上が可能になり、また均一な
現像が得られ、寸法精度も向上する。 As explained above, according to the present invention, since the developing substance is supplied in the gas phase, there is no possibility of foreign matter adhering to the resist or peeling off of the resist during development, and it is possible to improve the yield. Uniform development is obtained and dimensional accuracy is also improved.
第１図ａは従来のデイツプ現像方式を示す断面
図、第１図ｂは従来のスプレー現像方式の斜視
図、第２図は本発明によるレジスト現像装置の一
実施例を示す概略断面図である。
３……ウエハ、５……水蒸気またはキヤリア蒸
気、６……現像槽、７……水蒸気またはキヤリア
蒸気供給ノズル、８……現像剤蒸気、９……現像
剤蒸気供給ノズル、１０，１１……流量調整弁、
１２……リンス液供給ノズル、１３……リンス
液、１４……ウエハチヤツク。
FIG. 1a is a sectional view showing a conventional dip developing method, FIG. 1b is a perspective view of a conventional spray developing method, and FIG. 2 is a schematic sectional view showing an embodiment of a resist developing apparatus according to the present invention. . 3...Wafer, 5...Steam or carrier vapor, 6...Developer tank, 7...Steam or carrier vapor supply nozzle, 8...Developer vapor, 9...Developer vapor supply nozzle, 10, 11... flow control valve,
12... Rinse liquid supply nozzle, 13... Rinse liquid, 14... Wafer chuck.
Claims (1)
別々に現像チヤンバ内に供給し、これらの蒸気を
前記現像チヤンバ内で混合して現像を行い、その
後前記現像チヤンバ内にリンス液を供給して現像
を停止させるフオトレジスト現像方法。 ２ 現像剤の蒸気を供給する現像剤蒸気供給ノズ
ルと、水蒸気またはキヤリア蒸気を供給する水蒸
気またはキヤリア蒸気供給ノズルと、リンス液を
供給するリンス液供給ノズルとを現像チヤンバ内
に別々に設けたことを特徴とするフオトレジスト
現像装置。[Scope of Claims] 1 Developer vapor and water vapor or carrier vapor are separately supplied into a developing chamber, these vapors are mixed in the developing chamber to perform development, and then a rinsing liquid is supplied into the developing chamber. A photoresist development method in which development is stopped by supplying 2. A developer vapor supply nozzle for supplying developer vapor, a water vapor or carrier vapor supply nozzle for supplying water vapor or carrier vapor, and a rinsing liquid supply nozzle for supplying a rinse liquid are provided separately in the developing chamber. A photoresist developing device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11503081A JPS5817443A (en) | 1981-07-24 | 1981-07-24 | Photoresist developing method and its device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11503081A JPS5817443A (en) | 1981-07-24 | 1981-07-24 | Photoresist developing method and its device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5817443A JPS5817443A (en) | 1983-02-01 |
| JPH0225501B2 true JPH0225501B2 (en) | 1990-06-04 |
Family
ID=14652474
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11503081A Granted JPS5817443A (en) | 1981-07-24 | 1981-07-24 | Photoresist developing method and its device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5817443A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3534414A1 (en) * | 1985-09-27 | 1987-04-02 | Standard Elektrik Lorenz Ag | METHOD AND DEVICE FOR PRODUCING A BLACK MATRIX LAYER |
| JPS63250125A (en) * | 1987-04-06 | 1988-10-18 | Nec Yamagata Ltd | Manufacture of semiconductor device |
| EP0443796A3 (en) * | 1990-02-19 | 1992-03-04 | Hitachi Chemical Co., Ltd. | Development process |
| JPH07105336B2 (en) * | 1992-08-27 | 1995-11-13 | 日本電気株式会社 | Resist development method |
| US6025118A (en) * | 1998-05-12 | 2000-02-15 | Sony Corporation | Glassmastering photoresist read after write method and system |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5067577A (en) * | 1973-10-15 | 1975-06-06 |
-
1981
- 1981-07-24 JP JP11503081A patent/JPS5817443A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5067577A (en) * | 1973-10-15 | 1975-06-06 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5817443A (en) | 1983-02-01 |
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