JPH04171917A - Photo resist developing method - Google Patents

Abstract

PURPOSE:To prevent foreign matters from attaching on a wafer at the time of developing, and eliminate foreign matters contained in resist, by a method wherein, after development is performed by repeating a process wherein developer is eliminated by rotating a wafer coated with the developer, the wafer surface is coated with rinsing liquid, and said rinsing liquid is eliminated by rotating the wafer. CONSTITUTION:From a nozzle 4, developer 1 in the liquid phase is supplied on the surface of a wafer 3, which is coated with the developer. After the state is maintained for a while, the developer 1 spreaded on the wafer 3 surface is rotated and eliminated by rotating a wafer chuck 14. Development is performed by repeating this process several times. From the nozzle 4, rinsing liquid 15 in the liquid phase is supplied on the wafer 3 surface. After the state is maintained for a while, the rinsing liquid 15 spread on the wafer 3 surface is rotated and eliminated. This process is repeated several times, and the development is stopped.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] This invention relates to a photoresist developing method.

[Conventional technology]

Figure 2 is described in, for example, Japanese Patent Publication No. 2-25501.
1 is a cross-sectional view showing an apparatus used in a conventional photoresist developing method.

The conventional device includes a water vapor or carrier vapor supply nozzle (7) that supplies water vapor or carrier vapor (5) into the development chamber (6) and a developer vapor (8) into the development chamber (6). The developer vapor supply nozzle (9) is provided with a developer vapor supply nozzle (9).
Flow rate adjustment valves α0 and αυ to adjust the steam supply flow rate
There are entrances on every side. A rinsing liquid supply nozzle for supplying a rinsing liquid to stop the development is provided between the two nozzles (7 and 9).

Next, the operation will be explained.

When performing development, water vapor or carrier vapor is supplied from the water vapor or carrier vapor supply nozzle (7), and developer vapor is supplied from the developer supply nozzle (9) into the development chamber (6). These vapors enter the development chamber (
6) are mixed with each other and uniformly adhered to the resist surface on the wafer (3) held on the wafer chuck α,
Develop the resist. The mixing ratio of water vapor or carrier vapor and developer vapor can be adjusted to obtain optimum development by adjusting the flow rate adjustment mechanism and (b).

If you want to stop the development, simply supply the rinse liquid □□□ from the rinse liquid supply nozzle.

[Problem to be solved by the invention]

Since the conventional photoresist development method involves forming the photoresist as described above, there are problems such as the inability to remove foreign matter contained in the resist and attached to the wafer during development.

This invention was made in order to solve the above-mentioned problems, and is a photoresist that does not allow foreign matter to adhere to the wafer during development and can also remove foreign matter contained in the resist. The purpose is to obtain a developing method.

[Means to solve the problem]

This photoresist developing method according to the present invention performs development by repeating the steps of applying a developer to the wafer surface and removing the developer by rotating the wafer coated with the developer. Then, the development is stopped by repeating the steps of applying a rinsing liquid to the wafer surface and rotating the wafer coated with the rinsing liquid to remove the rinsing liquid.

[Effect]

In this invention, the process of applying a developer to the wafer surface and the process of rotating the wafer coated with the developer to remove the developer are repeated.
To remove foreign substances contained in a resist during development without causing the foreign substances to adhere to a wafer.

〔Example〕

An embodiment of the present invention will be described below with reference to the drawings. 1st
FIGS. 1A to 1D are process cross-sectional views showing a photoresist developing method according to an embodiment of the present invention.

The developing device used in this example is a wafer (3) fixed on a wafer chuck (141) in which a liquid-phase developer (11 or rinsing solution) is installed in a developing chamber (2). The wafer chuck α~ can be rotated.

Next, the operation will be explained. First, a liquid phase developer (1) is supplied and coated onto the surface of a wafer (3) from a nozzle (4) (FIG. 1(a)). After holding the wafer for a while, rotate the wafer chuck Q4 in FIG.
) The developing solution (υ) applied to the surface is removed by rotation. Development is then carried out by repeating the steps shown in FIGS. 1(a) and 1(b) several times.

Next, a liquid rinsing liquid μs is applied to the surface of the wafer (3) from the nozzle (4) (Fig. 1(C)), and after being held for a while, the wafer is chucked α as shown in Fig. 1(d). Rotate the wafer and apply the rinsing liquid (
) is rotated and removed. Then, Fig. 1(C), Fig. 1(
Development is stopped by repeating the step shown in d) several times.

In the above embodiment, the developer (1) and the rinsing wave curve are supplied by one nozzle (4), but they may be supplied by separate nozzles.

〔Effect of the invention〕

As described above, according to the present invention, development is performed by repeating the steps of applying a developer to the wafer surface and removing the developer by rotating the wafer coated with the developer. Development is stopped by repeating the process of applying a rinsing liquid to the wafer surface and rotating the wafer coated with this rinsing liquid to remove the rinsing liquid, which prevents foreign matter from adhering to the wafer during development. There is an advantage in that a photoresist developing method is provided which can remove foreign substances contained in the resist without causing any damage.

[Brief explanation of drawings]

FIG. 1(a) to FIG. 1(d) are cross-sectional views showing each step of a photoresist developing method according to an embodiment of the present invention;
FIG. 2 is a sectional view showing an apparatus used in a conventional photoresist development method. In the figure, (1) is the liquid, (3) is the wafer, and (4) is the liquid.
indicates the nozzle, and 4 indicates the rinse liquid. In addition, in FIG. 1, the same reference numerals indicate the same or equivalent parts.

Claims (1)

[Claims] Development is carried out by repeating the steps of applying a developer to the wafer surface and removing the developer by rotating the wafer coated with the developer, followed by a step of applying a rinsing solution to the wafer surface. . A photoresist developing method characterized in that development is stopped by repeating the steps of rotating the wafer coated with the rinsing liquid and removing the rinsing liquid.