JP2001228625A - Chemical solution treatment method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a chemical solution treatment method by which the uniformity of processing with a chemical solution is enhanced by moving the chemical solution on a substrate to be treated without direct contact with the chemical solution. SOLUTION: The chemical solution treatment method includes at least a step S102 for supplying a chemical solution for processing a film to be processed on a substrate to be treated to the top of the substrate to form a chemical solution film on the substrate and a step S104 for forming a flow of the chemical solution in the surface of the chemical solution film while holding the chemical solution film on the substrate by forming an airflow in such a way that it comes in contact with the surface of the chemical solution film after the step S102.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical processing method for processing a substrate using a chemical. In particular, the present invention processes various substrates such as a semiconductor substrate in a semiconductor device manufacturing process, a reticle (photomask) in a lithography process which is one of the semiconductor device manufacturing processes, and a flat panel in a liquid crystal display manufacturing process using a chemical solution. To a chemical treatment method.

[0002]

2. Description of the Related Art In a semiconductor manufacturing process, for example, a process of paddle forming a chemical solution on a substrate on which a film to be processed is formed and processing (etching) the film to be processed into a desired shape is repeatedly performed. Specifically, there are a development process in a photolithography process, a wet etching process performed subsequent to the photolithography process, and the like.

Conventionally, in the process of applying a chemical solution on a substrate to be processed on which a film to be processed is formed and stopping the etching to etch the film to be processed, the following problems have occurred. That is, there is a problem that the supply of a new etchant is not promoted due to the stay of the etching product around the etching region, and as a result, the etching rate is reduced. In particular, this problem was remarkable around a wide etching region.

In order to solve this problem, there has been proposed a substrate processing method and a substrate processing apparatus in which a chemical solution is moved on a film to be processed at the time of etching (JP-A-11-32996).
No. 0). In the substrate processing method and the substrate processing apparatus, a predetermined plate material is brought into contact with the surface of a chemical solution on a film to be processed, and the chemical material is moved on the film to be processed by moving the plate material. The movement of the chemical causes a flow in the chemical, and the chemical is agitated. Thereby, supply of a new etchant to the periphery of the etching region is promoted, and it is possible to suppress a decrease in the etching rate around the etching region.

However, after the chemical solution is agitated, the plate material needs to be washed, and the washing may cause dust adhering to the plate material to fall and adhere to the surface of the substrate to be processed. Then, a defect may occur on the substrate to be processed due to the adhesion of dust.

Further, as another proposal, there is a developing device and a developing method for intermittently rotating a substrate to be processed to move a chemical solution on a film to be processed (Japanese Patent Application No. 11-3074).
No. 33). In the developing device and the developing method, the movement of the chemical solution is realized by holding the substrate to be processed by the predetermined substrate holding unit and repeating the rotation of the substrate to be processed and the stationary state of the substrate to be processed.

However, according to the study of the present inventor, when the substrate to be processed is rotated, the chemical liquid rotates integrally with the substrate to be processed due to its viscosity. When the rotation of the substrate to be processed is stopped, only a slight fluctuation occurs in the chemical solution due to the inertial force.

[0008]

SUMMARY OF THE INVENTION The present invention solves such a problem and improves uniformity of processing of a chemical solution by moving the chemical solution on a substrate to be processed without directly contacting the chemical solution. It is an object of the present invention to provide a chemical treatment method.

[0009]

In order to solve the above-mentioned problems, the present invention provides a method for manufacturing a semiconductor device, comprising the steps of:
By supplying a chemical solution for processing the film to be processed, and forming a chemical solution film on the substrate to be processed, and after the chemical solution film forming step, by forming an airflow so as to contact the surface of the chemical solution film, Forming a flow of a chemical solution on the surface of the chemical film while holding the chemical film on the substrate to be processed.

In the present invention, the airflow is, for example,
It can be formed by arranging a gas supply unit around the outer peripheral portion of the substrate to be processed and supplying an airflow forming gas from above the gas supply unit to above the substrate to be processed. As the airflow forming gas, an inert gas is desirable. This is because there is no chemical reaction with the film to be processed. For example, nitrogen, helium, argon and the like. Also, if ozone, oxygen, hydrogen, etc. are mixed into the gas for forming an airflow, the surface of the film to be processed is
For example, it can be modified or oxidized to a small amount.

Further, the air flow can be formed, for example, by rotating a rotating body disposed above the substrate to be processed at a high speed. Examples of the shape of the rotating body include a disk, a ring shape, and a wing shape. When an airflow is formed by rotation of the rotating body, it may be performed in a decarbonated atmosphere. This is because carbon dioxide can be prevented from being mixed.

When a chemical film is formed on a substrate to be processed, it is desirable that the substrate to be processed itself is also rotated. This is because the movement of the chemical solution is made easier. At this time, the rotation of the substrate to be processed may be continuous or intermittent. However, it should be set so as to be in the mellow direction with respect to the direction of the air flow.

According to the present invention, a gas flow is formed above the chemical liquid film, and the gas flow is brought into contact with the surface of the chemical liquid, thereby causing the chemical liquid to move. For this reason, the chemical solution is agitated, and the uniformity of processing the film to be processed with the chemical solution is improved.

[0014]

Embodiments of the present invention will be described below in detail with reference to the drawings. In the following description of the drawings, the same or similar parts are denoted by the same or similar reference numerals.

(First Embodiment) FIG. 1 is a flowchart showing a processing procedure of a chemical solution processing method according to a first embodiment of the present invention. FIGS. 2 to 4 are cross-sectional views of a main part of a chemical processing apparatus for realizing the chemical processing method according to the first embodiment of the present invention. The chemical solution processing method according to the first embodiment of the present invention will be described with reference to FIGS.

(1) As shown in FIG. 2A, the substrate 10 to be processed after the previous process is transferred to an upper portion of the substrate holding unit 12 by a transfer robot (not shown). Then, the target substrate 10 is separated from the transfer robot and transferred to the substrate holding unit 12. The substrate to be processed 10 is fixed to the substrate holding unit 12 by suction (Step S10).
1).

(2) Next, as shown in FIG. 2B, a chemical solution 16 for processing a film to be processed on the substrate 10 is formed on the substrate 10. For example, the chemical solution is the substrate 1
The liquid is supplied from the chemical liquid discharge nozzle 14 disposed above the zero. The chemical solution discharge nozzle 14 scans the substrate 10 from one end to the other end of the substrate 10 while supplying the chemical solution 16. Thereby, the chemical liquid film 1 is formed on the substrate 10 to be processed.
6 is formed (step S102).

(3) Next, as shown in FIG. 3A, a gas supply unit 18 arranged around the outer peripheral portion of the substrate 10 to be processed.
To form a gas flow above the chemical solution 16 on the substrate 10 to be processed. Here, at the time of forming the airflow, the substrate holding unit 1
It is effective to rotate the substrate to be processed 10 by the rotation of 2. At this time, the rotation direction of the substrate to be processed 10 is preferably set to be along the direction of the air flow (step S103).

(4) Next, as shown in FIG. 3B, a rinsing liquid (for example, pure water) 22 is supplied from a rinsing liquid supply port 20 disposed above the substrate 10 to be processed, and is rotated. The substrate to be processed 10 is cleaned (step S104).

(5) Finally, as shown in FIG. 4, the substrate 10 is rotated at a high speed to shake off the pure water 22 from the substrate 10 and dry the substrate 10 (step S105). .

In the first embodiment of the present invention, the gas supply section 18 may be arranged, for example, as follows. FIG. 5 shows an example of the arrangement of the gas supply unit 18. FIG. 5 (a)
One gas supply unit 18a is provided around the outer peripheral portion of the substrate 10 to be processed.
Is an example in which. The direction of the airflow and the direction of rotation of the substrate match. FIG. 5B shows an example in which two gas supply units 18a and 18b are arranged to face each other around the outer peripheral portion of the substrate 10 to be processed. The direction of the airflow in each of the gas supply units 18a and 18b matches the substrate rotation direction. FIG.
(C) is an example in which two gas supply units 18c and 18d are arranged side by side around the outer peripheral portion of the substrate 10 to be processed. Further, the gas supply unit 18c on the outer peripheral side (outer peripheral area) with respect to the gas supply unit 18d on the central part side (inner peripheral area) of the substrate 10 to be processed.
Is set so that the gas flow velocity becomes faster. The direction of airflow of any of the gas supply units 18c and 18d is
It matches the substrate rotation direction. FIG. 5D shows two gas supply units 18c and 1 around the outer peripheral portion of the substrate 10 to be processed.
8d are arranged side by side, and the gas supply units 18c and 1
8d, gas supply units 18e and 18f
Are arranged side by side. Further, the gas supply units 18c and 18f on the outer peripheral side are set to have a higher gas flow rate than the gas supply units 18d and 18e on the central part side of the substrate 10 to be processed. Gas supply units 18c, 18d, 1
The direction of the airflow in each of 8e and 18f matches the substrate rotation direction.

The gas supply port of the gas supply section 18 may be as follows. FIG. 6 shows a cross-sectional view of the gas supply port of the gas supply unit 18. FIG. 6 (a) shows a flat mouth structure in which the flow velocity is constant in both the inner and outer peripheral regions, and FIG. 6 (b) shows a flat mouth structure in which the flow velocity is small in the inner peripheral region and the flow speed in the outer peripheral region. FIG. 6 (c) shows a case where the mouth width is narrow in the inner peripheral region and wider in the outer peripheral region.

In the first embodiment of the present invention, the supply of the chemical solution 16 is not limited to the one performed by scanning the chemical solution discharge nozzle 14 from one end to the other end. For example, you may perform using the following nozzles. 7A and 7B are views showing the rod-shaped nozzle, in which FIG. 7A is a cross-sectional view when the chemical 16 is supplied, and FIG. 7B is a plan view when the chemical 16 is supplied. 8A and 8B are views showing a straight nozzle, in which FIG. 8A is a cross-sectional view when the chemical 16 is supplied, and FIG. 8B is a plan view when the chemical 16 is supplied.

Next, the chemical solution processing method according to the first embodiment of the present invention will be described using the results of experiments conducted by the present inventors. First, a 6 nm antireflection film, a 400 nm resist film,
Were sequentially formed. Further, after a latent image was selectively formed on the resist film using an exposure device, baking was performed at 130 ° C. for 60 seconds.

Next, a developing solution, which is a chemical solution 16, was supplied onto the semiconductor substrate 10, and a developing solution film 16 was paddle-formed on the semiconductor substrate 10. Further, a nitrogen gas was supplied from the gas supply unit 18 onto the semiconductor substrate 10, and a gas flow of the nitrogen gas was formed so as to contact the surface of the developer 16. The flow rate of the nitrogen gas is 150 to 150 μm on the surface of the developer film 16.
400 mm / sec and the semiconductor substrate 1
The developing solution 16 was adjusted so that the developing solution 16 did not flow around the area other than 0 and the back surface. Also, as shown in FIG.
The gas supply port 18 was provided, and the outer peripheral portion of the semiconductor substrate 10 was set to have a higher nitrogen gas flow rate than the inner peripheral portion. At the time of gas supply, the semiconductor substrate 10 was rotated, and the direction of rotation was made to coincide with the direction of airflow. At this time, the rotation speed of the semiconductor substrate 10 was 5 rpm, and the surface rotation speed of the developer 16 was 35 rpm. That is, the surface rotation speed (relative rotation speed) of the developer 16 with respect to the rotation speed of the semiconductor substrate 10 was 30 rpm.

Here, I is placed on a separately prepared semiconductor substrate.
A linear resist film was formed and sparsely exposed. Then, the above relative rotation speed was reproduced, and the flow of the melt was observed. From this observation, it was found that the dissolved substance
It was confirmed that the particles moved at μm / sec. When the semiconductor substrate was simply intermittently rotated at 25 rpm as in the conventional example, the moving speed of the melt was about 5 μm / sec, and it was also confirmed that almost no liquid flow occurred on the surface of the semiconductor substrate. .

Next, after the development for 60 seconds, the supply of nitrogen gas was stopped, the number of revolutions of the semiconductor substrate was increased to 500 rpm, and pure water was poured from above the semiconductor substrate to perform rinsing. After rinsing, the supply of pure water is stopped, the semiconductor substrate is rotated at high speed, and the pure water is shaken off from the surface of the semiconductor substrate.
Let dry. Lastly, after stopping the rotation of the semiconductor substrate, the semiconductor substrate was moved using a transfer robot, and the chemical solution treatment was completed.

After completion of the chemical treatment, the distribution of the 130 nm isolated resist pattern in the semiconductor substrate surface (3σ
Value) was 4.5 nm, and the processing uniformity was significantly improved as compared with 10 nm when no airflow was formed.

In the first embodiment of the present invention, the relative rotation speed of the chemical 16 is not limited to 30 rpm.
It is applicable in the range of 10 rpm to 60 rpm. More preferably, it is in the range of 30 to 40 rpm. If the chemical solution 16 is not discharged out of the substrate to be processed 10, the relative rotation speed may be 60 rpm or more. further,
It does not need to be continuous rotation, for example, 9
The rotation may be intermittent rotation of 0 degrees.

The gas supplied from the gas supply unit 18 is desirably an inert gas that has a poor chemical reaction. For example, in addition to nitrogen gas, helium and argon are used.

The first embodiment of the present invention is applicable to not only the developing process but also a process (etching) by forming a paddle of a chemical solution.

Although the first embodiment of the present invention has been described using a circular substrate to be processed, the present invention can be applied to, for example, a mask substrate for exposure or a rectangular substrate such as a liquid crystal substrate.

Second Embodiment Next, a second embodiment of the present invention will be described.
An embodiment will be described. 9 to 11 are cross-sectional views of a main part of a chemical processing apparatus for realizing a chemical processing method according to the second embodiment of the present invention.
The same or similar parts are denoted by the same or similar reference numerals. According to the second embodiment of the present invention, in the first embodiment, the gas is supplied from the gas supply unit 18 disposed around the outer peripheral portion of the substrate 10 to be processed.
Although the airflow is formed above the chemical 16, the second embodiment is an example in which an airflow is formed by rotation of a rotating body disposed above the chemical 16. Hereinafter, a second embodiment of the present invention will be described with reference to FIGS. 1 and 9 to 11.

(1) As shown in FIG. 9A, the substrate to be processed 10 in which the pre-process has been completed is transferred to an upper portion of the substrate holding section 12 by a transfer robot (not shown). Then, the target substrate 10 is separated from the transfer robot and transferred to the substrate holding unit 12. The substrate to be processed 10 is fixed to the substrate holding unit 12 by suction (Step S10).
1).

(2) Next, as shown in FIG. 9B, a chemical solution 16 for processing a film to be processed on the substrate 10 is formed on the substrate 10. For example, the chemical solution is the substrate 1
The liquid is supplied from the chemical liquid discharge nozzle 14 disposed above the zero. The chemical solution discharge nozzle 14 scans the substrate 10 from one end to the other end of the substrate 10 while supplying the chemical solution 16. Thereby, the chemical liquid film 1 is formed on the substrate 10 to be processed.
6 is formed (step S102).

(3) Next, as shown in FIG.
By rotating the disk-shaped rotator 28 disposed above the substrate 10 to be processed, an airflow is formed above the chemical liquid film 16 on the substrate 20 to be processed. The disk-shaped rotator 28 is a disk larger than the substrate 10 to be processed, and is arranged close to the substrate 10 so as not to contact the surface of the chemical film 16. The central part of the disc-shaped rotating body 28 is hollow and can be opened and closed by an on-off valve (not shown). Here, it is also effective to rotate the processing target substrate 10 by rotating the substrate holding unit 12 during the formation of the airflow. At this time, it is preferable that the rotation direction of the processing target substrate 10 be along the direction of the airflow (step S).
103).

(4) Next, as shown in FIG.
Rinsing liquid supply port 20 arranged above substrate 10 to be processed
A rinsing liquid (eg, pure water) 22 is supplied from the substrate and the substrate to be processed 10 is washed while rotating (Step S10)
4).

(5) Finally, as shown in FIG. 11, the substrate 10 is rotated at a high speed to shake off the pure water 22 from the substrate 10 and dry the substrate 10 (step S105). .

Next, a chemical solution processing method according to a second embodiment of the present invention will be described using the results of experiments conducted by the present inventors. First, a 6 nm antireflection film, a 400 nm resist film,
Were sequentially formed. Further, after a latent image was selectively formed on the resist film using an exposure device, baking was performed at 130 ° C. for 60 seconds.

Next, a developing solution as the chemical solution 16 was supplied onto the semiconductor substrate 10, and a developing solution film 16 was paddle-formed on the semiconductor substrate 10. Further, the disc-shaped rotator 28 is placed on the semiconductor substrate 10 so as not to contact the surface of the developer film 16 on the semiconductor substrate 10, specifically, so that the distance from the surface of the developer solution 16 is 15 mm. Rotated closer. Then, the surface rotation speed of the developer film 16 on the semiconductor substrate 10 is set to 40 rpm.
The rotation speed of the disk-shaped rotating body 28 was adjusted so as to be m. During this adjustment, the open / close valve of the rotating body 28 was opened. In addition, the semiconductor substrate 10 was rotated as needed at 10 rpm. At this time, the rotation speed of the disc-shaped rotating body 28 is 4000r
pm.

Next, after the development for 60 seconds, the supply of the nitrogen gas was stopped, the number of revolutions of the semiconductor substrate was increased to 500 rpm, and pure water was poured from above the semiconductor substrate to perform rinsing. After rinsing, the supply of pure water is stopped, the semiconductor substrate is rotated at high speed, and the pure water is shaken off from the surface of the semiconductor substrate.
Let dry. Lastly, after stopping the rotation of the semiconductor substrate, the semiconductor substrate was moved using a transfer robot, and the chemical solution treatment was completed.

After the completion of the chemical solution treatment, the distribution (3σ) of the 130 nm isolated resist pattern in the semiconductor substrate surface.
Value) was 4.5 nm, and the processing uniformity was significantly improved as compared with 10 nm when no airflow was formed.

In the second embodiment of the present invention, the disk-shaped rotator 28 that forms an air flow above the chemical liquid film 16 may be, for example, a ring-shaped rotator 30 shown in FIG. Further, the wing-shaped rotating body 32 shown in FIG. 13 may be used.

In the above experiment, the surface rotation speed of the developer film 16 was set to 40 rpm, but the rotation speed of the present invention is not limited to this value. According to our experiments,
It was applicable in the range of 10 to 60 rpm. Further, the distance between the disc-shaped rotator 28 and the semiconductor substrate 10 is not limited to 15 mm. Furthermore, each rotating body 28, 3
0, 32 and the surface of the chemical liquid film 16,
The number of rotations of 0 and 32 may be any value as long as the predetermined number of rotations of the surface of the chemical film 16 is obtained, and the chemical liquid 16 is not discharged out of the substrate to be processed 10 or spills on the back surface of the substrate to be processed 10. May be set to. More preferably, the distance between each of the rotating bodies 28, 30, 32 and the surface of the chemical liquid film 16 is 10 to 30 mm, and the number of rotations of each of the rotating bodies 28, 30, 32 is preferably about 2000 to 6000 rpm.

(Third Embodiment) Next, a third embodiment of the present invention will be described.
An embodiment will be described. In the first embodiment, the gas supplied by the gas supply unit 18 above the chemical liquid film 16 is only an inert gas such as nitrogen gas.
The third embodiment is an example in which a gas such as ozone is further added. Hereinafter, a third embodiment of the present invention will be described using the results of experiments performed by the present inventors.

First, an antireflection film of 6 nm and a resist film of 400 nm were sequentially formed on a semiconductor substrate as the substrate 10 to be processed. Further, after a latent image was selectively formed on the resist film using an exposure device, baking was performed at 130 ° C. for 60 seconds.

Next, a developing solution as a chemical solution 16 was supplied onto the semiconductor substrate 10, and a developing solution film 16 was formed on the semiconductor substrate 10 by paddle formation. Further, a nitrogen gas was supplied from the gas supply unit 18 onto the semiconductor substrate 10, and a gas flow of the nitrogen gas was formed so as to contact the surface of the developer 16. The flow rate of the nitrogen gas is 150 to 150 μm on the surface of the developer film 16.
400 mm / sec and the semiconductor substrate 1
The developing solution 16 was adjusted so that the developing solution 16 did not flow around the area other than 0 and the back surface. Also, as shown in FIG.
The gas supply port 18 was provided, and the outer peripheral portion of the semiconductor substrate 10 was set to have a higher nitrogen gas flow rate than the inner peripheral portion. At the time of gas supply, the semiconductor substrate 10 was rotated, and the direction of rotation was made to coincide with the direction of airflow. At this time, the rotation speed of the semiconductor substrate 10 was 5 rpm, and the surface rotation speed of the developer 16 was 35 rpm. That is, the surface rotation speed (relative rotation speed) of the developer 16 with respect to the rotation speed of the semiconductor substrate 10 was 30 rpm.

Here, I was placed on a separately prepared semiconductor substrate.
A linear resist film was formed and sparsely exposed. Then, the above relative rotation speed was reproduced, and the flow of the melt was observed. From this observation, it was found that the dissolved substance
It was confirmed that the particles moved at μm / sec. When the semiconductor substrate was simply intermittently rotated at 25 rpm as in the conventional example, the moving speed of the melt was about 5 μm / sec, and it was also confirmed that almost no liquid flow occurred on the surface of the semiconductor substrate. .

Next, after a lapse of 40 seconds from the start of development, 20 pp of ozone was introduced into the nitrogen gas supplied from the gas supply unit 18.
m was added. By adding the ozone, the dissolution product generated by the development is subdivided. Then, 20 seconds after the addition of ozone, the supply of the nitrogen gas to which ozone was added was stopped, the rotation speed of the semiconductor substrate was increased to 500 rpm, pure water was poured from above the semiconductor substrate, and rinsing was performed. After rinsing, the supply of pure water was stopped, the semiconductor substrate was rotated at high speed, the pure water was shaken off from the surface of the semiconductor substrate, and dried. Lastly, after stopping the rotation of the semiconductor substrate, the semiconductor substrate was moved using a transfer robot, and the chemical solution treatment was completed.

After the completion of the chemical solution treatment, the distribution of the 130 nm isolated resist pattern in the semiconductor substrate surface (3σ)
Value) was 4.5 nm, and the processing uniformity was significantly improved as compared with 10 nm when no airflow was formed.
Further, the number of defects could be reduced to one tenth as compared with the conventional case.

In the above experiment, the concentration of ozone added to the nitrogen gas was set to 20 ppm, but the present invention is not limited to this. Any value may be used as long as the concentration does not cause a large dimensional change or a shape abnormality in the film to be processed (resist film). As a gas to be added, oxygen, hydrogen, or the like can be used in addition to ozone.

(Other Embodiments) The invention made by the present inventors has been described in the above embodiment. However, it should be understood that the description and drawings constituting a part of this disclosure limit the invention. should not do. From this disclosure, various alternative embodiments, examples, and operation techniques will be apparent to those skilled in the art.

For example, in the first to third embodiments, pure water or a dilute developer is applied to the semiconductor substrate 10 before padding the developer 16 on the semiconductor substrate 10.
It is sufficient that the surface of the semiconductor substrate 10 is dropped and the surface of the semiconductor substrate 10 is modified. This is because the surface (resist surface) of the semiconductor substrate 10 becomes compatible with the developer 16 and the paddle is easily formed.

Further, the formation of the airflow according to the second embodiment may be performed in a decarbonated atmosphere. CO in the airflow
₂ can be prevented from being mixed.

Thus, it should be understood that the present invention includes various embodiments and the like not described herein. Accordingly, the present invention is limited only by the matters specifying the invention according to the claims that are reasonable from this disclosure.

[0056]

According to the present invention, it is possible to realize a chemical processing method which improves the uniformity of processing of a chemical by moving the chemical on a substrate to be processed without directly contacting the chemical.

[Brief description of the drawings]

FIG. 1 is a flowchart showing a processing procedure of a chemical solution processing method according to a first embodiment of the present invention.

FIG. 2 is a sectional view of a main part of a chemical solution processing apparatus for realizing the chemical solution processing method according to the first embodiment of the present invention.

FIG. 3 is a sectional view of a main part of a chemical solution processing apparatus for realizing the chemical solution processing method according to the first embodiment of the present invention.

FIG. 4 is a sectional view of a main part of a chemical processing apparatus for realizing the chemical processing method according to the first embodiment of the present invention.

FIG. 5 is a diagram showing an example of an arrangement of a gas supply unit in FIG.

FIG. 6 is a sectional view of a gas supply port of the gas supply unit in FIG.

FIG. 7 is a sectional view of a main part of a chemical processing apparatus for realizing the chemical processing method according to the first embodiment of the present invention.

FIG. 8 is a sectional view of a main part of a chemical processing apparatus for realizing the chemical processing method according to the first embodiment of the present invention.

FIG. 9 is a sectional view of a main part of a chemical solution processing apparatus for realizing a chemical solution processing method according to a second embodiment of the present invention.

FIG. 10 is a sectional view of a main part of a chemical processing apparatus for realizing a chemical processing method according to a second embodiment of the present invention.

FIG. 11 is a sectional view of a main part of a chemical solution processing apparatus for realizing a chemical solution processing method according to a second embodiment of the present invention.

FIG. 12 is a sectional view of a main part of a chemical solution processing apparatus for realizing a chemical solution processing method according to a second embodiment of the present invention.

FIG. 13 is a sectional view of a main part of a chemical processing apparatus for realizing a chemical processing method according to a second embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Substrate to be processed (semiconductor substrate) 12 Substrate holding part 14 Chemical liquid discharge nozzle 16 Chemical liquid 18 Gas supply part 20 Rinse liquid supply port 22 Rinse liquid 24 Rod nozzle 26 Straight nozzle 28 Disc-shaped rotator 30 Ring-shaped rotator 32 Feather Rotating body

Claims (10)

[Claims] 1. A substrate to be processed on which a film to be processed is formed,
Supplying a chemical solution for processing the film to be processed, forming a chemical solution film on the substrate to be processed, and forming a gas flow so as to come into contact with the surface of the chemical solution film after the chemical solution film forming step. Forming a flow of a chemical solution on the surface of the chemical solution film while holding the chemical solution film on the substrate to be processed. 2. The method according to claim 1, wherein the gas flow is formed by supplying a gas for forming a gas flow from a gas supply unit disposed around an outer peripheral portion of the substrate to be processed, above the substrate to be processed. The chemical solution treatment method according to claim 1. 3. The method according to claim 2, wherein the gas for forming an airflow is an inert gas. 4. The chemical liquid processing method according to claim 3, wherein the gas for forming an airflow includes any one of ozone, oxygen, and hydrogen. 5. The chemical liquid processing method according to claim 1, wherein the airflow is formed by rotating a rotating body disposed above the substrate to be processed. 6. The chemical processing method according to claim 5, wherein the shape of the rotating body is any one of a disk shape, a ring shape, and a wing shape. 7. The chemical processing method according to claim 1, wherein the step of forming the flow of the chemical is performed in a decarbonated atmosphere. 8. The chemical processing method according to claim 1, wherein in the step of forming the flow of the chemical, the substrate to be processed is rotated. 9. The method according to claim 8, wherein the rotation of the substrate to be processed is continuous or intermittent. 10. The chemical processing method according to claim 9, wherein a rotation direction of the substrate to be processed is a forward direction with respect to a direction of the airflow.