JPS59132620A - Developing apparatus for semiconductor wafer - Google Patents

Abstract

PURPOSE:To permit development to be uniformly effected within a wafer with a reduced amount of a developer within a short period of time and with excellent reproducibility, by providing a disk-shaped plate having a bore capable of supplying, for example, a developer, such that the plate opposes against a rotatable chuck which horizontally suction-holds a semiconductor wafer. CONSTITUTION:A wafer 3 is suction-held by a rotatable chuck 4 such that the respective opposing surfaces of the wafer 3 and a developer supply part 10 are 0.2-2mm. apart in parallel to each other. A developer 2 is supplied from a developer supply bore 11 provided in the developer supply part 10 such as to completely fill up the space defined between the wafer 3 and the developer supply part 10. Thereafter, the wafer 3 is rotated at a speed between 10rpm and 200rpm, or the developer 2 is supplied while the wafer 3 is being rotated. If the wafer 3 is rotated at low speed during development, then it is possible to reduce the amount of the developer used to about 10CC per wafer. Further, since the wafer is rotated during development, the developer is stirred, so that the time required for development is reduced, and the development is uniformly effected within the wafer.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor wafer developing apparatus used in semiconductor manufacturing.

Conventionally, positive type pho) l/jis I1. In the ltl image device, immersion development, spray development, and meniscus development σ
The most common method is ■[! I was wondering.

First, immersion development will be explained.

As shown in FIG.
(not shown), soaked in milk for about 1 minute, and imaged with Li2.

In this method, (1) Development: Night reacts with carbon dioxide gas in the air (-1 The developing ability deteriorates over time.

■ If the same residue is developed multiple times, the developing ability will deteriorate as the number of times the developing process increases.

(4) In order to prevent the deterioration of the developing ability described in (1) and (2) above, it is necessary to replace the entire solution for each development, which consumes the entire amount of expensive developer.

Next, I will explain about the spray ring.

As shown in Fig. 2, the developer 2 is atomized and the rotating wafer 6 is
Spray on and develop. Note that 1 is a developer supply section and 4 is a wafer chuck. In this method, the temperature of the conical dust 1 solution is lower than that in the developer supply section 2 due to the pressure of N2, and the degree of strength of the solution is greatly influenced by the N2 pressure. For this reason, it becomes difficult to keep the temperature of the developing solution on the wafer 6 constant, and as a result, the developing ability changes to large IA.

Furthermore, meniscus development will be explained.

As shown in FIG. 3, the wafer 5 is completely stopped, the developer 2 is retained on the surface of the wafer 3 by surface tension, and development is performed. Note that 1 is a developer supply section and 4 is a wafer chuck. In this method, (1) the flow of developer is small in the periphery of the wafer, resulting in development defects;

■ If the peripheral area is optimally developed, the center area will be overdeveloped.

■ In order to prevent the above (■) and (■), if the developer 'gfi' is supplied while rotating the wafer chuck 4, a developer that is 3 to 10 times the amount of developer required for the original meniscus development will be required. . , As mentioned above, conventional positive photoresist developing equipment suffers from deterioration of the developer, large consumption of the developer,
There are problems such as large variations in line width between batches and large variations in line width within a wafer.

The present invention aims to solve all such conventional problems.

Next, embodiments of the present invention will be explained in detail with reference to the drawings.

As shown in FIG. 4, when the wafer 3 is sucked into the rotatable chuck 4, the surface of the wafer 6 and the opposing surface of the liquid supply unit 1 are separated from each other by 0.21WL~2 parallel to the fins. (Make it a brush. Next, the developer 2 is supplied from the developer supply hole 11 provided in the developer supply hole, and the developer 2 is applied to the wafer 3 and the developer supply part 1.
Completely fill the narrow space with 0. After that, wafer 3 is transferred from 1OR,P,M to 2LIOR,P,M
(or the developer 2 may be supplied while rotating the wafer 3).

When developing in this way, a new developing solution can be used for each sea urchin.
There is no deterioration in the developing ability due to the reaction between the developer and carbon dioxide gas in the air.

■ By keeping the temperature of the developer supply section 10 constant (
(or by keeping the room temperature constant), the temperature of the developer can be easily kept constant, and changes in developing ability due to temperature can be prevented.

■ If the wafer rotation speed during development is set to low speed (for example, 2oR)
, :p, pA, ), the area where the developer is used is 100
It can be kept at C8 degrees and only requires a small amount of expensive developer. A rough representation of the wafer 3 and the developer supply section 10
The volume surrounded by is fine.

- Since the wafer is rotated during the development process, the developer is stirred, the development time is short, and the development within the wafer is uniform.

As described above, by using the semiconductor wafer developing apparatus of the present invention, all the drawbacks of the conventional positive type developing apparatus can be solved, and the inside of the wafer can be uniformly processed in a short time using a small amount of developer. It also exhibits great effects such as being able to develop with good reproducibility.

Also, as is clear, the semiconductor wafer developing apparatus of the present invention can be applied not only to positive type resists but also to negative type resists, and has similar great effects.

In FIG. 4, reference numeral 1 has one hole for supplying the developer, but it is also possible to provide a plurality of holes to further improve the uniformity of development within the wafer.

[Brief explanation of the drawing]

Figures 1 to 3 show conventional semiconductor processing equipment.5- Evaporation developing device! FIG. 4 is a diagram showing the main parts of a semiconductor wafer developing apparatus according to an embodiment of the present invention. t, 10...Developer supply section 11...
...Developer supply hole 2 ...Developer 3 ...Wafer 4 ...Wafer chuck and above Applicant Corporation Daini Kozue Kosha Agent Patent Attorney Tsutomu Mogami 6- Figure 1 Figure 3 4-2 Figure 4

Claims (1)

[Claims] The semiconductor wafer is attached to a rotatable chuck that horizontally attracts the semiconductor wafer, and the entire structure is equipped with a circular hole with a hole for supplying developer, etc., at a position 0.2 to 2 holes away from the grown wafer. A semiconductor wafer developing device characterized by: