JPH10135127A - Substrate developing apparatus - Google Patents

Substrate developing apparatus

Info

Publication number
JPH10135127A
JPH10135127A JP30586396A JP30586396A JPH10135127A JP H10135127 A JPH10135127 A JP H10135127A JP 30586396 A JP30586396 A JP 30586396A JP 30586396 A JP30586396 A JP 30586396A JP H10135127 A JPH10135127 A JP H10135127A
Authority
JP
Japan
Prior art keywords
substrate
processing liquid
processing
temperature
space
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP30586396A
Other languages
Japanese (ja)
Inventor
Manabu Matsuo
学 松尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Canon Marketing Japan Inc
Original Assignee
Canon Inc
Canon Marketing Japan Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc, Canon Marketing Japan Inc filed Critical Canon Inc
Priority to JP30586396A priority Critical patent/JPH10135127A/en
Publication of JPH10135127A publication Critical patent/JPH10135127A/en
Withdrawn legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide a substrate developing apparatus which can uniformly supply a processing solution onto a processing surface of a substrate and also can control the processing solution to have an optimum temperature. SOLUTION: A substrate W1 is converted with a processing solution supply device 10, so as to be sealed by a seal ring 12 and to define a sealed space A. A processing solution is introduced from a processing solution supply port 11b into the sealed space A, a central part of the space A is vacuumed by a suction line connected to a suction port 11d to cause the solution to forcibly move toward the central part and to form a uniform solution layer, and the temperature of the space A is controlled by a temperature-adjusted fluid flowing through a fluid passage 11e.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、ウエハ等基板に塗
布されたレジスト等の感光性材料を露光後、現像処理を
施すための基板現像装置に関するものである。
[0001] 1. Field of the Invention [0002] The present invention relates to a substrate developing apparatus for performing a developing process after exposing a photosensitive material such as a resist applied to a substrate such as a wafer.

【0002】[0002]

【従来の技術】半導体製造プロセス等においては、ウエ
ハ等基板に塗布されたレジスト等の感光性材料を露光
後、現像処理する工程が必要である。図4は、従来から
基板の現像処理に用いられている装置を示すもので、基
板W0 を吸着保持する保持具121と、これを回転させ
る回転駆動部122と、保持具121上の基板W0 の中
心部に処理液を供給するノズル123を有する。回転駆
動部122によって基板W0 を回転させながら、その中
心部にノズル123から処理液を吐出し、遠心力によっ
て基板W0 の表面全体に処理液を供給し、回転駆動部1
22による基板W0の回転を停止して、現像処理が終る
まで所定時間静止状態を保つものである。
2. Description of the Related Art In a semiconductor manufacturing process or the like, a step of developing a photosensitive material such as a resist applied to a substrate such as a wafer after exposing it to light is required. FIG. 4 shows an apparatus conventionally used for developing a substrate. A holder 121 for sucking and holding the substrate W 0 , a rotation driving unit 122 for rotating the same, and a substrate W on the holder 121 are provided. having a nozzle 123 for supplying a processing liquid to the center of 0. While rotating the substrate W 0 by the rotation driving unit 122, the processing liquid is discharged from the nozzle 123 to the center of the substrate W 0 , and the processing liquid is supplied to the entire surface of the substrate W 0 by centrifugal force.
22 to stop the rotation of the substrate W 0 by, but to maintain the predetermined time quiescent state until the development process is completed.

【0003】[0003]

【発明が解決しようとする課題】しかしながら上記従来
の技術によれば、ノズルから吐出された処理液を基板表
面全体に供給したのちは、基板の回転を停止して所定時
間放置するだけであるから、その間に基板や処理液に温
度むらが発生する。また、基板上の感光性材料の露光部
分と非露光部分の間で処理液に対する濡れ性が異なるた
めに、処理液を供給する過程で液層の厚さが不均一にな
ったり、あるいは、基板に処理液を供給する工程で基板
の外周縁から落下する処理液が無駄になる等のトラブル
もある。
However, according to the above prior art, after the processing liquid discharged from the nozzle is supplied to the entire surface of the substrate, the rotation of the substrate is stopped and left for a predetermined time. In the meantime, temperature unevenness occurs in the substrate and the processing liquid. Further, since the wettability to the processing liquid is different between the exposed part and the non-exposed part of the photosensitive material on the substrate, the thickness of the liquid layer becomes uneven in the process of supplying the processing liquid, or There is also a problem that the processing liquid dropped from the outer peripheral edge of the substrate in the process of supplying the processing liquid is wasted.

【0004】現像処理中の基板や処理液の温度むらは、
現像後の製品基板の品質を著しく損なうものであり、原
因は以下のように推察される。
[0004] Temperature unevenness of the substrate and the processing solution during the developing process is as follows.
The quality of the product substrate after development is significantly impaired, and the cause is presumed as follows.

【0005】まず、現像処理中に処理液が蒸発すると、
蒸発潜熱によって処理液の温度が変化する。
First, when the processing liquid evaporates during the developing process,
The temperature of the processing liquid changes due to the latent heat of evaporation.

【0006】基板を裏面側から保持する保持具の接触部
と非接触部との間に伝熱による温度差が発生する。
[0006] A temperature difference occurs due to heat transfer between the contact portion and the non-contact portion of the holder for holding the substrate from the back side.

【0007】処理液を最適温度状態で供給しても、現像
処理が進行するにつれて放熱して周囲の雰囲気の温度に
近づいてゆくのを回避できない。
[0007] Even if the processing liquid is supplied at the optimum temperature, it is impossible to prevent the heat from radiating as the development processing proceeds and approaching the temperature of the surrounding atmosphere.

【0008】また、基板に対する処理液の供給量を増や
すことで、基板の露光部分と非露光部分の間の濡れ性の
差等のために液層が不均一になるのを防ぐ方法もある
が、処理液の消費量が著しく増大して、半導体製品の高
価格化を招く結果となる。
There is also a method of preventing the liquid layer from becoming non-uniform due to a difference in wettability between an exposed portion and a non-exposed portion of the substrate by increasing the supply amount of the processing liquid to the substrate. As a result, the consumption amount of the processing liquid is remarkably increased, resulting in an increase in the price of the semiconductor product.

【0009】本発明は上記従来の技術の有する未解決の
課題に鑑みてなされたものであり、基板の現像処理を最
適温度で均一に行なうことができるうえに、処理液の消
費量も少なくてすむ基板現像装置を提供することを目的
とするものである。
SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned unsolved problems of the prior art, and enables uniform development of a substrate at an optimum temperature, as well as low consumption of a processing solution. It is an object of the present invention to provide a substrate developing device that can be used.

【0010】[0010]

【課題を解決するための手段】上記目的を達成するた
め、本発明の基板現像装置は、基板の処理表面に面した
所定の空間部を覆うカバー部材と、前記所定の空間部に
処理液を供給する供給手段と、前記所定の空間部に負圧
を発生させる吸引手段と、前記所定の空間部の温度を制
御する温度制御手段を有することを特徴とする。
In order to achieve the above object, a substrate developing apparatus according to the present invention comprises a cover member for covering a predetermined space facing a processing surface of a substrate, and a processing liquid filled in the predetermined space. It is characterized by comprising supply means for supplying, suction means for generating a negative pressure in the predetermined space, and temperature control means for controlling the temperature of the predetermined space.

【0011】所定の空間部の圧力を計測する計測手段が
設けられているとよい。
It is preferable that a measuring means for measuring the pressure in the predetermined space is provided.

【0012】また、所定の空間部を密封する密封手段が
設けられているとよい。
Preferably, a sealing means for sealing a predetermined space is provided.

【0013】[0013]

【作用】基板の表面をカバー部材によって覆い、その内
側の空間部に現像処理のための処理液を供給するととも
に、前記空間部に負圧を発生させることで処理液を強制
流動させて、基板の処理表面に均一な液層を形成させ
る。また、カバー部材に設けられた温調流体流動路ある
いはペルチェ素子等の温度制御手段によって前記空間部
の温度を制御することで、現像処理中の基板や処理液の
温度を均一な最適温度に保つことができる。
The surface of the substrate is covered with a cover member, and a processing liquid for development processing is supplied to a space inside the substrate, and a negative pressure is generated in the space to force the processing liquid to flow. To form a uniform liquid layer on the treated surface. Further, by controlling the temperature of the space by a temperature control means such as a temperature control fluid flow path or a Peltier element provided in the cover member, the temperature of the substrate and the processing liquid during the development processing is maintained at a uniform optimum temperature. be able to.

【0014】このように、基板表面に均一な液層を形成
させて最適温度で現像処理を行ない、極めて高品質の基
板製品を量産することができる。
As described above, a uniform liquid layer is formed on the surface of the substrate, and the developing process is performed at an optimum temperature, so that a very high-quality substrate product can be mass-produced.

【0015】現像処理終了後は、吸引手段によって処理
液を回収したうえで、カバー部材を除去する。処理液が
基板の外周縁から落下して無駄になるおそれがないた
め、処理液の消費量を低減し、基板製品の低価格化に大
きく貢献できる。
After the completion of the developing process, the processing liquid is collected by the suction means, and then the cover member is removed. Since there is no possibility that the processing liquid drops from the outer peripheral edge of the substrate and is wasted, the consumption of the processing liquid can be reduced, which can greatly contribute to a reduction in the cost of the substrate product.

【0016】[0016]

【発明の実施の形態】本発明の実施の形態を図面に基づ
いて説明する。
Embodiments of the present invention will be described with reference to the drawings.

【0017】図1は一実施例による基板現像装置を示す
もので、これは、露光された基板W1 の処理表面全体を
覆うように構成された処理液供給装置10を有する。処
理液供給装置10は、下面に凹所11aを有するカバー
部材である円盤状の本体11と、該本体11の凹所11
aの外側に配設された密封手段であるシールリング12
を有し、シールリング12は、処理液供給装置10を基
板W1 (破線で示す)上に当てがったときに基板W1
外周部に接触し、本体11の凹所11aと基板W1 の処
理表面の間の所定の空間部を密封して密封空間Aを形成
する。
[0017] Figure 1 shows a substrate developing apparatus according to an embodiment, which has the configured processing liquid supply unit 10 so as to cover the entire processing surface of the exposed substrate W 1. The processing liquid supply device 10 includes a disc-shaped main body 11 which is a cover member having a recess 11 a on a lower surface, and a recess 11 of the main body 11.
a sealing ring 12 which is sealing means disposed outside
The seal ring 12 comes into contact with the outer periphery of the substrate W 1 when the processing liquid supply device 10 is applied on the substrate W 1 (indicated by a broken line), and the recess 11 a of the main body 11 and the substrate W 1 It seals the predetermined space between the first processing surface to form a sealed space a.

【0018】本体11の凹所11aの外周縁には、前記
密封空間Aに現像液等の処理液を供給するための複数の
供給手段である処理液供給口11bが開口している。各
処理液供給口11bは、内部配管11cおよび供給管1
3aを経て処理液供給源13に接続される。
At the outer peripheral edge of the recess 11a of the main body 11, there are opened processing liquid supply ports 11b as a plurality of supply means for supplying a processing liquid such as a developer to the sealed space A. Each processing liquid supply port 11b is connected to the internal pipe 11c and the supply pipe 1
It is connected to the processing liquid supply source 13 via 3a.

【0019】本体11の中央には、凹所11aに開口す
る吸引手段である吸引口11dが設けられ、該吸引口1
1dは、計測手段である計測部14aを経て吸引ポンプ
等を有する吸引ライン14に連通しており、密封空間A
の中央に負圧を発生させることで、各処理液供給口11
bから密封空間Aに供給された処理液を密封空間Aの中
央に向かって強制流動させる。計測部14aは、吸引ラ
イン14に吸引される吸気の圧力や温度を測定して、密
封空間Aの処理液の供給量と温度を検出する。
At the center of the main body 11, there is provided a suction port 11d which is a suction means which opens into the recess 11a.
1d communicates with a suction line 14 having a suction pump or the like via a measuring unit 14a as a measuring means, and a sealed space A
By generating a negative pressure in the center of each processing liquid supply port 11
b, the processing liquid supplied to the sealed space A is forced to flow toward the center of the sealed space A. The measuring unit 14a measures the pressure and temperature of the intake air sucked into the suction line 14, and detects the supply amount and the temperature of the processing liquid in the sealed space A.

【0020】本体11の温度は、本体11に設けられた
温度制御手段である温調流体流動路11eを流動する温
調流体によって制御される。温調流体流動路11eは、
本体11の凹所11aに沿って配設され、基板W1 の処
理表面に面した密封空間Aに供給された処理液の温度
を、給液口15aから供給され、排液口15bから排出
される温調流体によって高精度で制御できるように構成
されている。
The temperature of the main body 11 is controlled by a temperature control fluid flowing through a temperature control fluid flow path 11e as temperature control means provided in the main body 11. The temperature control fluid flow path 11e is
Disposed along the recess 11a of the main body 11, the temperature of the processing liquid supplied to the sealed space A facing the processing surface substrate W 1, is supplied from the liquid supply ports 15a, it is discharged from the liquid discharge port 15b It is configured so that it can be controlled with high accuracy by a temperature-controlled fluid.

【0021】基板W1 の現像処理は以下のように行なわ
れる。図2に示す保持具21に基板W1 の裏面を吸着保
持し、その上に処理液供給装置10を載せて、シールリ
ング12によって本体11の凹所11aと基板W1 の処
理表面との間を密封する(図3参照)。このようにして
形成された密封空間Aを、まず吸引ライン14によって
排気して所定の負圧に減圧したうえで、処理液供給源1
3の処理液を供給する。この間、吸引ライン14による
吸引を継続し、密封空間A内の処理液を基板W1 の処理
表面の中央に向かって流動させる。
The development processing of the substrate W 1 is carried out as follows. Figure 2 backside of the substrate W 1 to the holder 21 shown in adsorbed and retained, it puts the processing liquid supply unit 10 thereon, between the recess 11a and the substrate W 1 of the treated surface of the main body 11 by a seal ring 12 (See FIG. 3). The sealed space A thus formed is first evacuated by the suction line 14 to reduce the pressure to a predetermined negative pressure.
3 is supplied. During this time, it continued suction by the suction line 14, flowing the process liquid in the sealed space A toward the center of the treated surface substrate W 1.

【0022】このようにして基板W1 の処理表面に均一
な厚さの液層を形成し、密封空間A内に充分な処理液が
供給されたのを吸引ライン14の計測部14aによって
確認したのちに、処理液の供給を停止し、現像処理が終
わるまで待機する。
In this manner, a liquid layer having a uniform thickness was formed on the processing surface of the substrate W 1 , and it was confirmed by the measuring unit 14 a of the suction line 14 that a sufficient processing liquid was supplied into the sealed space A. After that, the supply of the processing liquid is stopped, and the process waits until the development processing is completed.

【0023】密封空間Aに充填された処理液は、前述の
ように基板W1 の処理表面に均一な液層を形成するた
め、例えば、基板W1 の露光部分と非露光部分の間で処
理液に対する濡れ性等が異なっていても、現像処理が不
均一になるおそれはない。また、本体11の温調流体流
動路11eを流動する温調流体によって密封空間A内の
処理液が最適温度に制御されるため、基板に処理液を塗
布したままで放置した場合のような温度むらによるトラ
ブルはない。
The processing solution filled in the sealed space A in order to form a uniform liquid layer on the treated surface substrate W 1 as described above, for example, processing between exposed and unexposed parts of the substrate W 1 Even if the wettability with the liquid is different, there is no possibility that the development processing becomes uneven. In addition, since the processing liquid in the sealed space A is controlled to the optimum temperature by the temperature-controlling fluid flowing through the temperature-controlling fluid flow path 11e of the main body 11, the temperature is the same as when the processing liquid is left applied to the substrate. There is no trouble due to unevenness.

【0024】計測部14aによって密封空間Aの処理液
の温度を検知することで現像処理の終了を確認して、吸
引ライン14によって密封空間Aの処理液を回収し、続
いて、基板W1 から処理液供給装置10を後退させる。
さらに、回転駆動部22によって基板W1 を回転させな
がら、洗浄等の後処理を行なう。なお、処理液を回収す
る工程中に、処理液供給口11bから密封空間Aに加圧
空気を供給してもよい。
[0024] Check the completion of the development process by detecting the temperature of the treatment liquid sealing space A by the measurement unit 14a, to collect the treatment liquid sealing space A by the suction line 14, then, the substrate W 1 The processing liquid supply device 10 is retracted.
Moreover, while rotating the substrate W 1 by the rotary drive unit 22, performs post-processing such as washing. In addition, pressurized air may be supplied to the sealed space A from the processing liquid supply port 11b during the process of collecting the processing liquid.

【0025】遠心力によって処理液を基板の処理表面に
供給する場合のように、基板の外周縁から処理液が落下
して無駄になるおそれがなく、密封空間A内の処理液を
すべて回収することができる。従って、処理液の消費量
が少なくてすむ。
As in the case where the processing liquid is supplied to the processing surface of the substrate by centrifugal force, there is no possibility that the processing liquid falls from the outer peripheral edge of the substrate and is wasted, and all the processing liquid in the sealed space A is recovered. be able to. Therefore, the consumption of the processing liquid is small.

【0026】本実施例によれば、基板に対する処理液の
供給と温度制御を極めて安定して高精度で行なうことが
できるため、現像処理後の基板製品の品質が高く、しか
も製品ごとのバラつきも少ない。
According to the present embodiment, the supply of the processing liquid to the substrate and the temperature control can be performed extremely stably and with high precision, so that the quality of the substrate product after the development processing is high, and the variation among the products is small. Few.

【0027】また、現像処理中の処理液の温度を任意に
制御できるため、現像処理のための最適温度と周囲の雰
囲気の温度との間に大きな温度差があっても、安定した
現像処理を行なうことができるという特筆すべき長所が
ある。
Further, since the temperature of the processing solution during the developing process can be arbitrarily controlled, even if there is a large temperature difference between the optimum temperature for the developing process and the temperature of the surrounding atmosphere, stable developing process can be performed. There is a remarkable advantage that it can be done.

【0028】加えて、前述のように処理液の消費量が少
ないため、半導体製品等の低価格化を大きく促進でき
る。
In addition, since the consumption of the processing solution is small as described above, the cost reduction of semiconductor products can be greatly promoted.

【0029】なお、処理液供給装置の各処理液供給口の
形状は、図1に示すように円形に限らず、楕円形や方形
あるいは特殊な異形でもよい。また、本体内に温調流体
を流動させる替わりに、ペルチェ素子等の他の温調手段
を用いてもよい、さらに、本体の凹所の形状は、基板に
対向する底面が基板に平行でフラットな円形空間でもよ
いし、処理液の気泡が溜るのを防ぐために上記底面を湾
曲させて曲面空間を形成するように構成してもよい。
The shape of each processing liquid supply port of the processing liquid supply device is not limited to a circle as shown in FIG. 1, but may be an ellipse, a square, or a special irregular shape. Instead of flowing the temperature control fluid into the main body, other temperature control means such as a Peltier element may be used.Furthermore, the shape of the recess of the main body is such that the bottom surface facing the substrate is parallel to the substrate and flat. The bottom surface may be curved to form a curved space in order to prevent accumulation of bubbles of the processing liquid.

【0030】本実施例においては、処理液の供給を開始
する前に密封空間を負圧に制御する方法を採用している
が、処理液の性質上その発泡性等を考慮しなければなら
ないときは、逆に密封空間を加圧してもよい。
In this embodiment, a method is employed in which the sealed space is controlled to a negative pressure before the supply of the processing liquid is started. However, when the foaming property of the processing liquid must be taken into consideration due to the properties of the processing liquid. On the contrary, the sealed space may be pressurized.

【0031】[0031]

【発明の効果】本発明は上述のように構成されているの
で、以下に記載するような効果を奏する。
Since the present invention is configured as described above, it has the following effects.

【0032】基板の現像処理を最適温度で均一に行なう
ことができるうえに、処理液の消費量も少なくてすむ。
これによって現像処理後の基板製品の品質向上と低価格
化に大きく貢献できる。
The development processing of the substrate can be performed uniformly at the optimum temperature, and the consumption of the processing liquid can be reduced.
This can greatly contribute to quality improvement and cost reduction of the substrate product after the development processing.

【図面の簡単な説明】[Brief description of the drawings]

【図1】一実施例による基板現像装置の主要部を示すも
ので、(a)はその断面図、(b)は(a)の一部分を
底面側からみた部分平面図である。
1A and 1B show a main part of a substrate developing apparatus according to one embodiment, in which FIG. 1A is a cross-sectional view, and FIG. 1B is a partial plan view of a part of FIG.

【図2】基板現像装置の主要部を基板に載せる前の状態
で示す斜視図である。
FIG. 2 is a perspective view showing a state before a main part of the substrate developing device is mounted on a substrate.

【図3】基板に現像処理を施す工程中の基板現像装置を
示す斜視図である。
FIG. 3 is a perspective view showing the substrate developing apparatus during a step of performing a developing process on the substrate.

【図4】一従来例を示す斜視図である。FIG. 4 is a perspective view showing a conventional example.

【符号の説明】[Explanation of symbols]

10 処理液供給装置 11 本体 11a 凹所 11b 処理液供給口 11e 温調流体流動路 12 シールリング 13 処理液供給源 14 吸引ライン 14a 計測部 21 保持具 22 回転駆動部 DESCRIPTION OF SYMBOLS 10 Processing liquid supply apparatus 11 Main body 11a Recess 11b Processing liquid supply port 11e Temperature control fluid flow path 12 Seal ring 13 Processing liquid supply source 14 Suction line 14a Measuring part 21 Holder 22 Rotation drive part

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】 基板の処理表面に面した所定の空間部を
覆うカバー部材と、前記所定の空間部に処理液を供給す
る供給手段と、前記所定の空間部に負圧を発生させる吸
引手段と、前記所定の空間部の温度を制御する温度制御
手段を有する基板現像装置。
1. A cover member for covering a predetermined space facing a processing surface of a substrate, a supply unit for supplying a processing liquid to the predetermined space, and a suction unit for generating a negative pressure in the predetermined space. And a temperature control means for controlling the temperature of the predetermined space.
【請求項2】 所定の空間部の圧力を計測する計測手段
が設けられていることを特徴とする請求項1記載の基板
現像装置。
2. The substrate developing apparatus according to claim 1, further comprising a measuring unit for measuring a pressure in a predetermined space.
【請求項3】 所定の空間部を密封する密封手段が設け
られていることを特徴とする請求項1または2記載の基
板現像装置。
3. The substrate developing apparatus according to claim 1, further comprising sealing means for sealing a predetermined space.
【請求項4】 カバー部材が、基板の処理表面に平行な
底面を備えた凹所を有することを特徴とする請求項1な
いし3いずれか1項記載の基板現像装置。
4. The substrate developing apparatus according to claim 1, wherein the cover member has a recess having a bottom surface parallel to the processing surface of the substrate.
【請求項5】 カバー部材の凹所の底面が、湾曲してい
ることを特徴とする請求項4記載の基板現像装置。
5. The substrate developing device according to claim 4, wherein the bottom surface of the concave portion of the cover member is curved.
【請求項6】 温度制御手段が、カバー部材の内部に設
けられた温調流体流動路を有することを特徴とする請求
項1ないし5いずれか1項記載の基板現像装置。
6. The substrate developing apparatus according to claim 1, wherein the temperature control means has a temperature control fluid flow path provided inside the cover member.
【請求項7】 温度制御手段が、カバー部材に配設され
たペルチェ素子を有することを特徴とする請求項1ない
し5いずれか1項記載の基板現像装置。
7. The substrate developing device according to claim 1, wherein the temperature control means has a Peltier element provided on the cover member.
JP30586396A 1996-10-31 1996-10-31 Substrate developing apparatus Withdrawn JPH10135127A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP30586396A JPH10135127A (en) 1996-10-31 1996-10-31 Substrate developing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30586396A JPH10135127A (en) 1996-10-31 1996-10-31 Substrate developing apparatus

Publications (1)

Publication Number Publication Date
JPH10135127A true JPH10135127A (en) 1998-05-22

Family

ID=17950273

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30586396A Withdrawn JPH10135127A (en) 1996-10-31 1996-10-31 Substrate developing apparatus

Country Status (1)

Country Link
JP (1) JPH10135127A (en)

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JP2008085150A (en) * 2006-09-28 2008-04-10 Kurita Water Ind Ltd Cleaning method
WO2011090141A1 (en) * 2010-01-22 2011-07-28 芝浦メカトロニクス株式会社 Substrate treatment device and substrate treatment method
JP2011233902A (en) * 2010-04-29 2011-11-17 Ev Group Gmbh Device and method for delaminating polymer layer from surface of substrate
JP2021057596A (en) * 2015-11-30 2021-04-08 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated Methods and apparatus for post-exposure processes of photoresist wafers

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008085150A (en) * 2006-09-28 2008-04-10 Kurita Water Ind Ltd Cleaning method
WO2011090141A1 (en) * 2010-01-22 2011-07-28 芝浦メカトロニクス株式会社 Substrate treatment device and substrate treatment method
CN102782807A (en) * 2010-01-22 2012-11-14 芝浦机械电子装置股份有限公司 Substrate treatment device and substrate treatment method
TWI451524B (en) * 2010-01-22 2014-09-01 Shibaura Mechatronics Corp A substrate processing apparatus and a substrate processing method
KR20150013342A (en) * 2010-01-22 2015-02-04 시바우라 메카트로닉스 가부시끼가이샤 Substrate treatment device and substrate treatment method
JP2015159331A (en) * 2010-01-22 2015-09-03 芝浦メカトロニクス株式会社 substrate processing apparatus and substrate processing method
JP5841431B2 (en) * 2010-01-22 2016-01-13 芝浦メカトロニクス株式会社 Substrate processing apparatus and substrate processing method
US9240314B2 (en) 2010-01-22 2016-01-19 Shibaura Mechatronics Corporation Substrate treatment device and substrate treatment method
JP2011233902A (en) * 2010-04-29 2011-11-17 Ev Group Gmbh Device and method for delaminating polymer layer from surface of substrate
JP2021057596A (en) * 2015-11-30 2021-04-08 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated Methods and apparatus for post-exposure processes of photoresist wafers
US11899366B2 (en) 2015-11-30 2024-02-13 Applied Materials, Inc. Method and apparatus for post exposure processing of photoresist wafers

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