JPS57105886A - Semiconductor memory - Google Patents

Semiconductor memory

Info

Publication number
JPS57105886A
JPS57105886A JP55183424A JP18342480A JPS57105886A JP S57105886 A JPS57105886 A JP S57105886A JP 55183424 A JP55183424 A JP 55183424A JP 18342480 A JP18342480 A JP 18342480A JP S57105886 A JPS57105886 A JP S57105886A
Authority
JP
Japan
Prior art keywords
frequency
control circuit
circuit
current control
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55183424A
Other languages
Japanese (ja)
Inventor
Katsuhisa Kubota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55183424A priority Critical patent/JPS57105886A/en
Publication of JPS57105886A publication Critical patent/JPS57105886A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To control a current flowing in a memory cell, by providing a frequency detection circuit between a signal input terminal and a current control circuit for a current flowing the memory cell, detecting the frequency of an input signal, and inputting the output to a current control circuit. CONSTITUTION:A frequency detection circuit having a buffer circuit BUF, differentiating circuit DIF and rectification and smoothing circuit SM is provided between a signal input terminal IN and a current control circuit CCT. A base potential of transistors Q30-Q3n constituting each constant current source of memory is supplied from a current control circuit CCT, and when the frequency of an input signal is high, i.e., the frequency of access is high, the output voltage of the current control circuit is high and the frequency of input signal is low. That is, when the frequency of access is low, the output voltage is low and the holding current in the memory is controlled with the frequency of access. Thus, the power can be used efficiently and the power consumption is decreased.
JP55183424A 1980-12-24 1980-12-24 Semiconductor memory Pending JPS57105886A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55183424A JPS57105886A (en) 1980-12-24 1980-12-24 Semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55183424A JPS57105886A (en) 1980-12-24 1980-12-24 Semiconductor memory

Publications (1)

Publication Number Publication Date
JPS57105886A true JPS57105886A (en) 1982-07-01

Family

ID=16135532

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55183424A Pending JPS57105886A (en) 1980-12-24 1980-12-24 Semiconductor memory

Country Status (1)

Country Link
JP (1) JPS57105886A (en)

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