JPS57104665A - Etching method - Google Patents

Etching method

Info

Publication number
JPS57104665A
JPS57104665A JP17976280A JP17976280A JPS57104665A JP S57104665 A JPS57104665 A JP S57104665A JP 17976280 A JP17976280 A JP 17976280A JP 17976280 A JP17976280 A JP 17976280A JP S57104665 A JPS57104665 A JP S57104665A
Authority
JP
Japan
Prior art keywords
pattern
etching
photoresist
film
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17976280A
Other languages
Japanese (ja)
Inventor
Atsushi Ueno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP17976280A priority Critical patent/JPS57104665A/en
Publication of JPS57104665A publication Critical patent/JPS57104665A/en
Pending legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To improve the rate of etching transfer for a resist mask by heat- treating a photoresist pattern at above the softening temp. of the resist thereby making the contact angle acute and improving etching resistance.
CONSTITUTION: A thermal oxidation film 2, and a polycrystalline Si film 5 are formed on an Si substrate 1, after which, for example, photoresist is coated, and a photoresist pattern 4 is formed selectively by UV exposure and developing. Next, this is heat-treated at above the softening temp. of the photoresist to round the side surfaces of the photoresist pattern 4' with surface tension so that about 80W90° acute contact angles to the substrate 1 are obtained. Next, with the pattern 4' as a mask, the Si film 5 is etched by, for example, a reactive sputter etching method. As a result, the pattern 4" virtually the same as that before etching is obtained simply by slightly etching one side in the lateral direction of the pattern 4'. Therefore, the etching pattern 3' of the film 5 is made to the pattern approximately equal to the size of the above-described mask.
COPYRIGHT: (C)1982,JPO&Japio
JP17976280A 1980-12-18 1980-12-18 Etching method Pending JPS57104665A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17976280A JPS57104665A (en) 1980-12-18 1980-12-18 Etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17976280A JPS57104665A (en) 1980-12-18 1980-12-18 Etching method

Publications (1)

Publication Number Publication Date
JPS57104665A true JPS57104665A (en) 1982-06-29

Family

ID=16071433

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17976280A Pending JPS57104665A (en) 1980-12-18 1980-12-18 Etching method

Country Status (1)

Country Link
JP (1) JPS57104665A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5219713A (en) * 1990-12-17 1993-06-15 Rockwell International Corporation Multi-layer photoresist air bridge fabrication method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5219713A (en) * 1990-12-17 1993-06-15 Rockwell International Corporation Multi-layer photoresist air bridge fabrication method

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