JPS57104665A - Etching method - Google Patents
Etching methodInfo
- Publication number
- JPS57104665A JPS57104665A JP17976280A JP17976280A JPS57104665A JP S57104665 A JPS57104665 A JP S57104665A JP 17976280 A JP17976280 A JP 17976280A JP 17976280 A JP17976280 A JP 17976280A JP S57104665 A JPS57104665 A JP S57104665A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- etching
- photoresist
- film
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To improve the rate of etching transfer for a resist mask by heat- treating a photoresist pattern at above the softening temp. of the resist thereby making the contact angle acute and improving etching resistance.
CONSTITUTION: A thermal oxidation film 2, and a polycrystalline Si film 5 are formed on an Si substrate 1, after which, for example, photoresist is coated, and a photoresist pattern 4 is formed selectively by UV exposure and developing. Next, this is heat-treated at above the softening temp. of the photoresist to round the side surfaces of the photoresist pattern 4' with surface tension so that about 80W90° acute contact angles to the substrate 1 are obtained. Next, with the pattern 4' as a mask, the Si film 5 is etched by, for example, a reactive sputter etching method. As a result, the pattern 4" virtually the same as that before etching is obtained simply by slightly etching one side in the lateral direction of the pattern 4'. Therefore, the etching pattern 3' of the film 5 is made to the pattern approximately equal to the size of the above-described mask.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17976280A JPS57104665A (en) | 1980-12-18 | 1980-12-18 | Etching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17976280A JPS57104665A (en) | 1980-12-18 | 1980-12-18 | Etching method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57104665A true JPS57104665A (en) | 1982-06-29 |
Family
ID=16071433
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17976280A Pending JPS57104665A (en) | 1980-12-18 | 1980-12-18 | Etching method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57104665A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5219713A (en) * | 1990-12-17 | 1993-06-15 | Rockwell International Corporation | Multi-layer photoresist air bridge fabrication method |
-
1980
- 1980-12-18 JP JP17976280A patent/JPS57104665A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5219713A (en) * | 1990-12-17 | 1993-06-15 | Rockwell International Corporation | Multi-layer photoresist air bridge fabrication method |
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