JPS5710240A - Forming method of insulating film - Google Patents
Forming method of insulating filmInfo
- Publication number
- JPS5710240A JPS5710240A JP8443180A JP8443180A JPS5710240A JP S5710240 A JPS5710240 A JP S5710240A JP 8443180 A JP8443180 A JP 8443180A JP 8443180 A JP8443180 A JP 8443180A JP S5710240 A JPS5710240 A JP S5710240A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- substrates
- tube
- specimens
- infrared rays
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- 230000004913 activation Effects 0.000 abstract 1
- 238000000137 annealing Methods 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000012159 carrier gas Substances 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8443180A JPS5710240A (en) | 1980-06-20 | 1980-06-20 | Forming method of insulating film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8443180A JPS5710240A (en) | 1980-06-20 | 1980-06-20 | Forming method of insulating film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5710240A true JPS5710240A (en) | 1982-01-19 |
| JPH0345534B2 JPH0345534B2 (enrdf_load_stackoverflow) | 1991-07-11 |
Family
ID=13830389
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8443180A Granted JPS5710240A (en) | 1980-06-20 | 1980-06-20 | Forming method of insulating film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5710240A (enrdf_load_stackoverflow) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS586137A (ja) * | 1981-07-03 | 1983-01-13 | Nec Corp | 化合物半導体上に絶縁膜を形成する方法 |
| JPS60258915A (ja) * | 1984-03-07 | 1985-12-20 | ゼネラル シグナル コ−ポレ−シヨン | レ−ザ−化学気相沈積方法および装置 |
| JPS6279627A (ja) * | 1985-09-30 | 1987-04-13 | ジエ−ムス エフ キバンズ | 半導体材料の表面を高温で反応させる方法 |
| JPS62222631A (ja) * | 1986-03-24 | 1987-09-30 | Nec Corp | 気相成長装置 |
| FR2605647A1 (fr) * | 1986-10-27 | 1988-04-29 | Nissim Yves | Procede de depot en phase vapeur par flash thermique d'une couche isolante sur un substrat en materiau iii-v, application a la fabrication d'une structure mis |
| JPH0645322A (ja) * | 1992-07-22 | 1994-02-18 | Nec Corp | 窒化シリコン膜の製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS508473A (enrdf_load_stackoverflow) * | 1972-11-29 | 1975-01-28 |
-
1980
- 1980-06-20 JP JP8443180A patent/JPS5710240A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS508473A (enrdf_load_stackoverflow) * | 1972-11-29 | 1975-01-28 |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS586137A (ja) * | 1981-07-03 | 1983-01-13 | Nec Corp | 化合物半導体上に絶縁膜を形成する方法 |
| JPS60258915A (ja) * | 1984-03-07 | 1985-12-20 | ゼネラル シグナル コ−ポレ−シヨン | レ−ザ−化学気相沈積方法および装置 |
| JPS6279627A (ja) * | 1985-09-30 | 1987-04-13 | ジエ−ムス エフ キバンズ | 半導体材料の表面を高温で反応させる方法 |
| JPS62222631A (ja) * | 1986-03-24 | 1987-09-30 | Nec Corp | 気相成長装置 |
| FR2605647A1 (fr) * | 1986-10-27 | 1988-04-29 | Nissim Yves | Procede de depot en phase vapeur par flash thermique d'une couche isolante sur un substrat en materiau iii-v, application a la fabrication d'une structure mis |
| JPH0645322A (ja) * | 1992-07-22 | 1994-02-18 | Nec Corp | 窒化シリコン膜の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0345534B2 (enrdf_load_stackoverflow) | 1991-07-11 |
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