JPS57100746A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS57100746A
JPS57100746A JP55176824A JP17682480A JPS57100746A JP S57100746 A JPS57100746 A JP S57100746A JP 55176824 A JP55176824 A JP 55176824A JP 17682480 A JP17682480 A JP 17682480A JP S57100746 A JPS57100746 A JP S57100746A
Authority
JP
Japan
Prior art keywords
mos
channel mos
basic cell
integrated circuit
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55176824A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0475664B2 (enrdf_load_stackoverflow
Inventor
Teruo Kobayashi
Haruyuki Tago
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55176824A priority Critical patent/JPS57100746A/ja
Publication of JPS57100746A publication Critical patent/JPS57100746A/ja
Publication of JPH0475664B2 publication Critical patent/JPH0475664B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP55176824A 1980-12-15 1980-12-15 Semiconductor integrated circuit device Granted JPS57100746A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55176824A JPS57100746A (en) 1980-12-15 1980-12-15 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55176824A JPS57100746A (en) 1980-12-15 1980-12-15 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS57100746A true JPS57100746A (en) 1982-06-23
JPH0475664B2 JPH0475664B2 (enrdf_load_stackoverflow) 1992-12-01

Family

ID=16020477

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55176824A Granted JPS57100746A (en) 1980-12-15 1980-12-15 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS57100746A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6139549A (ja) * 1984-07-30 1986-02-25 Hitachi Ltd 半導体集積回路装置
US4668972A (en) * 1983-08-26 1987-05-26 Fujitsu Limited Masterslice semiconductor device
JPS62200756A (ja) * 1986-02-28 1987-09-04 Nec Ic Microcomput Syst Ltd 半導体集積回路
US5136356A (en) * 1989-04-19 1992-08-04 Seiko Epson Corporation Semiconductor device
US5436485A (en) * 1991-07-18 1995-07-25 Fujitsu Limited Transistor arrangement for forming basic cell of master-slice type semiconductor integrated circuit device and master-slice type semiconductor integrated circuit device
JPH08124857A (ja) * 1994-10-20 1996-05-17 Nec Corp スパッタ装置とその装置を用いた半導体装置の製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4668972A (en) * 1983-08-26 1987-05-26 Fujitsu Limited Masterslice semiconductor device
JPS6139549A (ja) * 1984-07-30 1986-02-25 Hitachi Ltd 半導体集積回路装置
JPS62200756A (ja) * 1986-02-28 1987-09-04 Nec Ic Microcomput Syst Ltd 半導体集積回路
US5136356A (en) * 1989-04-19 1992-08-04 Seiko Epson Corporation Semiconductor device
US5436485A (en) * 1991-07-18 1995-07-25 Fujitsu Limited Transistor arrangement for forming basic cell of master-slice type semiconductor integrated circuit device and master-slice type semiconductor integrated circuit device
JPH08124857A (ja) * 1994-10-20 1996-05-17 Nec Corp スパッタ装置とその装置を用いた半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0475664B2 (enrdf_load_stackoverflow) 1992-12-01

Similar Documents

Publication Publication Date Title
EP1533901A3 (en) CMOS circuits with protection for a single event upset
JPS5591162A (en) Semiconductor device
DE69131399D1 (de) Basiszelle für bicmos-gatterfeld
JPS5333076A (en) Production of mos type integrated circuit
KR870011616A (ko) 센스 앰프
KR980006407A (ko) 에스램 및 그의 제조방법
ATE50885T1 (de) Verfahren zum herstellen von kreuzkopplungen zwischen n- und p-kanal-cmos-feldeffekttransistoren von statischen schreib-lesespeichern, insbesondere bei 6-transistorspeicherzellen-anordnungen.
JPS57100746A (en) Semiconductor integrated circuit device
JPS5661088A (en) Semiconductor memory device
ATE73580T1 (de) Gate array anordnung in cmos-technik.
JPS56162860A (en) Semiconductor device
JPS5542332A (en) Memory circuit
DE3865432D1 (de) Gatterschaltung mit mos-transistoren.
US4115796A (en) Complementary-MOS integrated semiconductor device
JPS5485662A (en) Semiconductor device
JPS55120171A (en) Semiconductor integrated circuit
JPS5749253A (en) Semiconductor integrated circuit
JPS55121666A (en) Mos transistor circuit
JPS54151380A (en) Mos transistor
JPS57105890A (en) Semiconductor storage device
JPS6441924A (en) Logic circuit
HK70587A (en) Semiconductor memory device
JPS54153539A (en) Semiconductor integrated circuit device
KR910017424A (ko) 반도체 집적회로 장치의 메모리셀 회로
JPS6428862A (en) Cmos semiconductor device