JPS57100720A - Manufacture of amorphous semiconductor film - Google Patents

Manufacture of amorphous semiconductor film

Info

Publication number
JPS57100720A
JPS57100720A JP55177891A JP17789180A JPS57100720A JP S57100720 A JPS57100720 A JP S57100720A JP 55177891 A JP55177891 A JP 55177891A JP 17789180 A JP17789180 A JP 17789180A JP S57100720 A JPS57100720 A JP S57100720A
Authority
JP
Japan
Prior art keywords
gas flow
exit
control plate
film
vicinity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55177891A
Other languages
English (en)
Inventor
Kuniharu Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP55177891A priority Critical patent/JPS57100720A/ja
Publication of JPS57100720A publication Critical patent/JPS57100720A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
JP55177891A 1980-12-16 1980-12-16 Manufacture of amorphous semiconductor film Pending JPS57100720A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55177891A JPS57100720A (en) 1980-12-16 1980-12-16 Manufacture of amorphous semiconductor film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55177891A JPS57100720A (en) 1980-12-16 1980-12-16 Manufacture of amorphous semiconductor film

Publications (1)

Publication Number Publication Date
JPS57100720A true JPS57100720A (en) 1982-06-23

Family

ID=16038861

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55177891A Pending JPS57100720A (en) 1980-12-16 1980-12-16 Manufacture of amorphous semiconductor film

Country Status (1)

Country Link
JP (1) JPS57100720A (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59104117A (ja) * 1982-12-06 1984-06-15 Agency Of Ind Science & Technol 減圧堆積装置
JPS59110701U (ja) * 1983-01-18 1984-07-26 株式会社富士技研 自在車輪付走行体
JPS612319A (ja) * 1984-06-14 1986-01-08 Semiconductor Energy Lab Co Ltd Ｃｖｄ装置
JPH02224231A (ja) * 1988-11-30 1990-09-06 Tokyo Electron Ltd プラズマ処理装置
US6167834B1 (en) 1986-12-19 2001-01-02 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
KR100364091B1 (ko) * 2000-06-27 2002-12-11 주식회사 아펙스 다채널 플레이트를 구비한 증착장치

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59104117A (ja) * 1982-12-06 1984-06-15 Agency Of Ind Science & Technol 減圧堆積装置
JPS59110701U (ja) * 1983-01-18 1984-07-26 株式会社富士技研 自在車輪付走行体
JPS647041Y2 (ja) * 1983-01-18 1989-02-23
JPS612319A (ja) * 1984-06-14 1986-01-08 Semiconductor Energy Lab Co Ltd Ｃｖｄ装置
US6167834B1 (en) 1986-12-19 2001-01-02 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
JPH02224231A (ja) * 1988-11-30 1990-09-06 Tokyo Electron Ltd プラズマ処理装置
KR100364091B1 (ko) * 2000-06-27 2002-12-11 주식회사 아펙스 다채널 플레이트를 구비한 증착장치

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