JPS5696860A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5696860A
JPS5696860A JP17174879A JP17174879A JPS5696860A JP S5696860 A JPS5696860 A JP S5696860A JP 17174879 A JP17174879 A JP 17174879A JP 17174879 A JP17174879 A JP 17174879A JP S5696860 A JPS5696860 A JP S5696860A
Authority
JP
Japan
Prior art keywords
layer
amorphous
monocrystal
emitter
injection efficiency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17174879A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6337509B2 (enrdf_load_stackoverflow
Inventor
Hisao Hayashi
Norikazu Ouchi
Hisayoshi Yamoto
Takeshi Matsushita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP17174879A priority Critical patent/JPS5696860A/ja
Publication of JPS5696860A publication Critical patent/JPS5696860A/ja
Publication of JPS6337509B2 publication Critical patent/JPS6337509B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures

Landscapes

  • Bipolar Transistors (AREA)
  • Recrystallisation Techniques (AREA)
JP17174879A 1979-12-29 1979-12-29 Semiconductor device Granted JPS5696860A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17174879A JPS5696860A (en) 1979-12-29 1979-12-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17174879A JPS5696860A (en) 1979-12-29 1979-12-29 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5696860A true JPS5696860A (en) 1981-08-05
JPS6337509B2 JPS6337509B2 (enrdf_load_stackoverflow) 1988-07-26

Family

ID=15928952

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17174879A Granted JPS5696860A (en) 1979-12-29 1979-12-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5696860A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61180480A (ja) * 1984-10-02 1986-08-13 イメツク（インタ−・ユニヴア−スイタリア・マイクロ−エレクトロニカ・セントラム）ヴイ・ズイ−・ダブリユ バイポ−ラ・ヘテロ接合トランジスタ−及びその製造方法
JPS6351673A (ja) * 1985-03-23 1988-03-04 エステイ−シ−　ピ−エルシ− バイポ−ラトランジスタの製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61180480A (ja) * 1984-10-02 1986-08-13 イメツク（インタ−・ユニヴア−スイタリア・マイクロ−エレクトロニカ・セントラム）ヴイ・ズイ−・ダブリユ バイポ−ラ・ヘテロ接合トランジスタ−及びその製造方法
JPS6351673A (ja) * 1985-03-23 1988-03-04 エステイ−シ−　ピ−エルシ− バイポ−ラトランジスタの製造方法

Also Published As

Publication number Publication date
JPS6337509B2 (enrdf_load_stackoverflow) 1988-07-26

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