JPS5683059A - Horizontal bipolar transistor - Google Patents
Horizontal bipolar transistorInfo
- Publication number
- JPS5683059A JPS5683059A JP16012779A JP16012779A JPS5683059A JP S5683059 A JPS5683059 A JP S5683059A JP 16012779 A JP16012779 A JP 16012779A JP 16012779 A JP16012779 A JP 16012779A JP S5683059 A JPS5683059 A JP S5683059A
- Authority
- JP
- Japan
- Prior art keywords
- concentration
- impurities
- section
- digging
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012535 impurity Substances 0.000 abstract 9
- 239000000758 substrate Substances 0.000 abstract 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229920006395 saturated elastomer Polymers 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/735—Lateral transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain a low saturated voltage characteristic by a method wherein a digging-in section is formed to a low impurity concentration epitaxial growth layer, and horizontal transistors are made up at a bottom section of the digging-in section, the concentration of impurities thereof is increased by means of auto-doping from a high impurity concentration substrate. CONSTITUTION:An epitaxial layer 2 having the concentration of impurities such as 3X10<13>atom/cm<3> is grown on an N<+> type semiconductor substrate 1 having the concentration of impurities such as 5X10<18>atom/cm<3>. A surface of the silicon substrate is etched to form a digging-in section 11. In the distribution of the concentration of impurities in the epitaxial layer 2 at that time, the nearer the impurities approach to an epitaxial interface the higher the concentration of the impurities becomes by auto-doping and out-diffusion from the N<+> type substrate 1 in case of growth. Horizontal transistors are formed at a bottom section of the digging-in section in the substrate treated in this manner so that the concentration of the impurities of the epitaxial layer forming junctions with an emitter 6 and one section of a collector 7 reaches 1X10<15>atom/cm<3> or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16012779A JPS5683059A (en) | 1979-12-10 | 1979-12-10 | Horizontal bipolar transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16012779A JPS5683059A (en) | 1979-12-10 | 1979-12-10 | Horizontal bipolar transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5683059A true JPS5683059A (en) | 1981-07-07 |
Family
ID=15708445
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16012779A Pending JPS5683059A (en) | 1979-12-10 | 1979-12-10 | Horizontal bipolar transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5683059A (en) |
-
1979
- 1979-12-10 JP JP16012779A patent/JPS5683059A/en active Pending
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