JPS5694792A - Visible light semiconductor laser element - Google Patents

Visible light semiconductor laser element

Info

Publication number
JPS5694792A
JPS5694792A JP17155279A JP17155279A JPS5694792A JP S5694792 A JPS5694792 A JP S5694792A JP 17155279 A JP17155279 A JP 17155279A JP 17155279 A JP17155279 A JP 17155279A JP S5694792 A JPS5694792 A JP S5694792A
Authority
JP
Japan
Prior art keywords
mixed crystal
visible light
active layer
crystal ratio
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17155279A
Other languages
English (en)
Inventor
Toshiro Hayakawa
Toshikimi Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP17155279A priority Critical patent/JPS5694792A/ja
Publication of JPS5694792A publication Critical patent/JPS5694792A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP17155279A 1979-12-28 1979-12-28 Visible light semiconductor laser element Pending JPS5694792A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17155279A JPS5694792A (en) 1979-12-28 1979-12-28 Visible light semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17155279A JPS5694792A (en) 1979-12-28 1979-12-28 Visible light semiconductor laser element

Publications (1)

Publication Number Publication Date
JPS5694792A true JPS5694792A (en) 1981-07-31

Family

ID=15925238

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17155279A Pending JPS5694792A (en) 1979-12-28 1979-12-28 Visible light semiconductor laser element

Country Status (1)

Country Link
JP (1) JPS5694792A (ja)

Similar Documents

Publication Publication Date Title
JPS5752186A (en) Semiconductor laser
JPS5694792A (en) Visible light semiconductor laser element
JPS5493380A (en) Semiconductor light emitting device
JPS57183091A (en) Manufacture of optical integrated circuit
JPS55140286A (en) Buried heterogeneous structure semiconductor for use in laser
JPS575327A (en) Manufacture of semiconductor device
JPS55108789A (en) Semiconductor laser
JPS5522807A (en) Semiconductor laser element and manufacturing of the same
JPS5353991A (en) Gallium phosphide light emitting element
JPS57184278A (en) Semiconductor laser element
JPS5670676A (en) Luminous diode
JPS55125692A (en) Semiconductor laser
JPS52141189A (en) Production of distribution feedback type semiconductor laser
JPS5783072A (en) Light emitting diode
JPS5789284A (en) Semiconductor laser
JPS6441290A (en) Semiconductor light emitting device
JPS57199288A (en) Laser diode
JPS56130917A (en) Manufacture of semiconductor device
JPS5626484A (en) Semiconductor light source
JPS57183080A (en) Light emission diode
JPS5236988A (en) Semiconductor laser
JPS5242389A (en) Semiconductor light emission device
JPS57199272A (en) Photogenerating elements
JPS52149081A (en) Semiconductor laser of double hetero structure
JPS57190909A (en) Waveguide element and its manufacture