JPS5691435A - Plasma vapor growing method - Google Patents
Plasma vapor growing methodInfo
- Publication number
- JPS5691435A JPS5691435A JP16903079A JP16903079A JPS5691435A JP S5691435 A JPS5691435 A JP S5691435A JP 16903079 A JP16903079 A JP 16903079A JP 16903079 A JP16903079 A JP 16903079A JP S5691435 A JPS5691435 A JP S5691435A
- Authority
- JP
- Japan
- Prior art keywords
- reaction gas
- coating film
- arc discharge
- high frequency
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16903079A JPS5691435A (en) | 1979-12-25 | 1979-12-25 | Plasma vapor growing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16903079A JPS5691435A (en) | 1979-12-25 | 1979-12-25 | Plasma vapor growing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5691435A true JPS5691435A (en) | 1981-07-24 |
JPS6310892B2 JPS6310892B2 (ja) | 1988-03-10 |
Family
ID=15879012
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16903079A Granted JPS5691435A (en) | 1979-12-25 | 1979-12-25 | Plasma vapor growing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5691435A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63246829A (ja) * | 1986-12-19 | 1988-10-13 | アプライド マテリアルズインコーポレーテッド | Teosプラズマcvd法 |
-
1979
- 1979-12-25 JP JP16903079A patent/JPS5691435A/ja active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63246829A (ja) * | 1986-12-19 | 1988-10-13 | アプライド マテリアルズインコーポレーテッド | Teosプラズマcvd法 |
JPH0612771B2 (ja) * | 1986-12-19 | 1994-02-16 | アプライド マテリアルズインコーポレーテッド | Teosプラズマcvd法 |
US6167834B1 (en) | 1986-12-19 | 2001-01-02 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
Also Published As
Publication number | Publication date |
---|---|
JPS6310892B2 (ja) | 1988-03-10 |
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