JPS5685839A - Structure for heat resistant electrode and wiring - Google Patents

Structure for heat resistant electrode and wiring

Info

Publication number
JPS5685839A
JPS5685839A JP16154479A JP16154479A JPS5685839A JP S5685839 A JPS5685839 A JP S5685839A JP 16154479 A JP16154479 A JP 16154479A JP 16154479 A JP16154479 A JP 16154479A JP S5685839 A JPS5685839 A JP S5685839A
Authority
JP
Japan
Prior art keywords
layer
aluminum
electrode
substrate
heat resistant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16154479A
Other languages
Japanese (ja)
Inventor
Kohei Yamada
Hajime Terakado
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP16154479A priority Critical patent/JPS5685839A/en
Publication of JPS5685839A publication Critical patent/JPS5685839A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To reduce the contacting resistance of an electrode wiring structure by forming a heat resistant wire of double layer structure of Cr-Ag through an aluminum-doped layer on an Si substrate. CONSTITUTION:An SiO2 film is formed on an Si substrate 17 on which an N<+> layer and an N<-> layer are laminated and a diffused layer is formed as prescribed, is selectively opened with windows, and an aluminum layer 25 is covered thereon. After it is heated at 450 deg.C for approx. 30 minutes, the layer 25 is etched and removed. With this treatment an aluminum-doped layer 26 is formed on the aluminum layer portion making direct contact with the Si substrate. Subsequently, two-layer electrode wires of Cr layer 27 and Ag layer 28 is selectively formed thereon. Thereafter, it is covered with an insulating protective film 29, and a bump electrode 30 and two-layer electrode of Au layer 31 and Ag layer 32 are attached thereto. According to this configuration an electric wire having durability against a sealing temperature of approx. 700 deg.C, a contact resistance not increased, and electric characteristics as designed values can be formed.
JP16154479A 1979-12-14 1979-12-14 Structure for heat resistant electrode and wiring Pending JPS5685839A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16154479A JPS5685839A (en) 1979-12-14 1979-12-14 Structure for heat resistant electrode and wiring

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16154479A JPS5685839A (en) 1979-12-14 1979-12-14 Structure for heat resistant electrode and wiring

Publications (1)

Publication Number Publication Date
JPS5685839A true JPS5685839A (en) 1981-07-13

Family

ID=15737114

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16154479A Pending JPS5685839A (en) 1979-12-14 1979-12-14 Structure for heat resistant electrode and wiring

Country Status (1)

Country Link
JP (1) JPS5685839A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4936517A (en) * 1972-08-08 1974-04-04
JPS51126762A (en) * 1975-04-28 1976-11-05 Oki Electric Ind Co Ltd Integrated circuit manufacturing process

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4936517A (en) * 1972-08-08 1974-04-04
JPS51126762A (en) * 1975-04-28 1976-11-05 Oki Electric Ind Co Ltd Integrated circuit manufacturing process

Similar Documents

Publication Publication Date Title
JPS5685839A (en) Structure for heat resistant electrode and wiring
JPS57100748A (en) Manufacture of semiconductor device
JPS6411337A (en) Semiconductor device
JPS5650533A (en) Semiconductor device
JPS56159178A (en) Thermal head
JPS55151334A (en) Fabricating method of semiconductor device
JPS5743433A (en) Semiconductor device
JPS5735318A (en) Manufacture of semiconductor device
JPS5771149A (en) Electrode structure of semiconductor device
JPS57159044A (en) Semiconductor device
JPS5645057A (en) Dhd type semiconductor device
JPS57103333A (en) Manufacture of semiconductor device
JPS5652837A (en) Anode structure of magnetron and manufacturing method
JPS5635471A (en) Manufacture of semiconductor device
JPS55121636A (en) Manufacture of semiconductor apparatus
JPS55117264A (en) Semiconductor device
JPS5795626A (en) Manufacture of semiconductor device
JPS5565576A (en) Thermal head
JPS5562474A (en) Heating roller
JPS57104252A (en) Polycrystal silicon-fuse-memory and its manufacture
JPS6110979B2 (en)
JPS57104225A (en) Manufacture of semiconductor device
JPS6437011A (en) Manufacture of semiconductor integrated circuit
JPS6410133A (en) Thermistor unit
JPS5717149A (en) Semiconductor device