JPS5683939A - Pattern testing process - Google Patents

Pattern testing process

Info

Publication number
JPS5683939A
JPS5683939A JP16103679A JP16103679A JPS5683939A JP S5683939 A JPS5683939 A JP S5683939A JP 16103679 A JP16103679 A JP 16103679A JP 16103679 A JP16103679 A JP 16103679A JP S5683939 A JPS5683939 A JP S5683939A
Authority
JP
Japan
Prior art keywords
signal
fault
pattern
electron
sensed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16103679A
Other languages
Japanese (ja)
Inventor
Toshihiko Osada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16103679A priority Critical patent/JPS5683939A/en
Publication of JPS5683939A publication Critical patent/JPS5683939A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To provide a consecutive sensing of the defaults in a pattern and improve an efficiency of processing by a method wherein an alignment of the position is made in advance, thereafter a scanning by the electron beams is made, a on-off signal of the beams and the reflected electronic signal are compared with each other. CONSTITUTION:Upon completion of a finding of the mark 11 and its position alignment, an electron beam is scanned by a coil 3, a signal X is transmitted from a central processing device 9 in reference to information of a reference mark pattern stored in a magnetic tape to turn on or off a blanking coil 4. In turn, a reflected electron from a mask surface is sensed at 2, resulting in a signal Y to make AND output 8 with the signal X. When there is a fault 13 in the mask pattern 12, the signal X and Y are not coicided with each other, and to the contrary when information relating to the fault is stored in a central processing device 9 in reference to the output 8, the fault portion is sensed upon completion of the scanning operation. With this arrangement, a memory device having a large capacity is not required and further a processing for the exposure of electron beam made by a computer may be improved.
JP16103679A 1979-12-12 1979-12-12 Pattern testing process Pending JPS5683939A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16103679A JPS5683939A (en) 1979-12-12 1979-12-12 Pattern testing process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16103679A JPS5683939A (en) 1979-12-12 1979-12-12 Pattern testing process

Publications (1)

Publication Number Publication Date
JPS5683939A true JPS5683939A (en) 1981-07-08

Family

ID=15727368

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16103679A Pending JPS5683939A (en) 1979-12-12 1979-12-12 Pattern testing process

Country Status (1)

Country Link
JP (1) JPS5683939A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60210839A (en) * 1984-03-05 1985-10-23 Fujitsu Ltd Reticle detection method
JPS6317523A (en) * 1986-07-09 1988-01-25 Toshiba Mach Co Ltd Electron-beam lithography equipment

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5421277A (en) * 1977-07-19 1979-02-17 Mitsubishi Electric Corp Inspection method for pattern

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5421277A (en) * 1977-07-19 1979-02-17 Mitsubishi Electric Corp Inspection method for pattern

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60210839A (en) * 1984-03-05 1985-10-23 Fujitsu Ltd Reticle detection method
JPH034895B2 (en) * 1984-03-05 1991-01-24 Fujitsu Ltd
JPS6317523A (en) * 1986-07-09 1988-01-25 Toshiba Mach Co Ltd Electron-beam lithography equipment

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