JPS5680179A - Planar type hetero-junction light detector - Google Patents

Planar type hetero-junction light detector

Info

Publication number
JPS5680179A
JPS5680179A JP15769279A JP15769279A JPS5680179A JP S5680179 A JPS5680179 A JP S5680179A JP 15769279 A JP15769279 A JP 15769279A JP 15769279 A JP15769279 A JP 15769279A JP S5680179 A JPS5680179 A JP S5680179A
Authority
JP
Japan
Prior art keywords
type inp
film
metal
type
inp layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15769279A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63955B2 (enrdf_load_stackoverflow
Inventor
Kenshin Taguchi
Katsuhiko Nishida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15769279A priority Critical patent/JPS5680179A/ja
Publication of JPS5680179A publication Critical patent/JPS5680179A/ja
Publication of JPS63955B2 publication Critical patent/JPS63955B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction

Landscapes

  • Light Receiving Elements (AREA)
JP15769279A 1979-12-05 1979-12-05 Planar type hetero-junction light detector Granted JPS5680179A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15769279A JPS5680179A (en) 1979-12-05 1979-12-05 Planar type hetero-junction light detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15769279A JPS5680179A (en) 1979-12-05 1979-12-05 Planar type hetero-junction light detector

Publications (2)

Publication Number Publication Date
JPS5680179A true JPS5680179A (en) 1981-07-01
JPS63955B2 JPS63955B2 (enrdf_load_stackoverflow) 1988-01-09

Family

ID=15655289

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15769279A Granted JPS5680179A (en) 1979-12-05 1979-12-05 Planar type hetero-junction light detector

Country Status (1)

Country Link
JP (1) JPS5680179A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56167373A (en) * 1980-05-27 1981-12-23 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light sensor
JPS5723490A (en) * 1980-07-15 1982-02-06 Matsushita Electric Works Ltd Electric equipment with heater
JPS6285832A (ja) * 1985-10-11 1987-04-20 Mitsubishi Cable Ind Ltd 光学式温度計
US5148251A (en) * 1991-11-25 1992-09-15 The United States Of America As Represented By The Secretary Of The Army Photoconductive avalanche GaAs switch
US5179430A (en) * 1988-05-24 1993-01-12 Nec Corporation Planar type heterojunction avalanche photodiode
US5343054A (en) * 1992-09-14 1994-08-30 Kabushiki Kaisha Toshiba Semiconductor light-detection device with recombination rates

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2477234B1 (en) 2009-09-07 2021-06-23 Sumitomo Electric Industries, Ltd. Group iii-v compound semiconductor light receiving element, method for manufacturing group iii-v compound semiconductor light receiving element, light receiving element, and epitaxial wafer
JP5659864B2 (ja) * 2011-03-01 2015-01-28 住友電気工業株式会社 Ｉｉｉ−ｖ族化合物半導体受光素子
JP5983716B2 (ja) * 2014-12-01 2016-09-06 住友電気工業株式会社 Ｉｉｉ−ｖ族化合物半導体受光素子

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5441091A (en) * 1977-09-08 1979-03-31 Matsushita Electronics Corp Semiconductor photoelectric transducer

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5441091A (en) * 1977-09-08 1979-03-31 Matsushita Electronics Corp Semiconductor photoelectric transducer

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56167373A (en) * 1980-05-27 1981-12-23 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light sensor
JPS5723490A (en) * 1980-07-15 1982-02-06 Matsushita Electric Works Ltd Electric equipment with heater
JPS6285832A (ja) * 1985-10-11 1987-04-20 Mitsubishi Cable Ind Ltd 光学式温度計
US5179430A (en) * 1988-05-24 1993-01-12 Nec Corporation Planar type heterojunction avalanche photodiode
US5148251A (en) * 1991-11-25 1992-09-15 The United States Of America As Represented By The Secretary Of The Army Photoconductive avalanche GaAs switch
US5343054A (en) * 1992-09-14 1994-08-30 Kabushiki Kaisha Toshiba Semiconductor light-detection device with recombination rates

Also Published As

Publication number Publication date
JPS63955B2 (enrdf_load_stackoverflow) 1988-01-09

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