JPS5679433A - Forming of ultra fine pattern - Google Patents
Forming of ultra fine patternInfo
- Publication number
- JPS5679433A JPS5679433A JP15650579A JP15650579A JPS5679433A JP S5679433 A JPS5679433 A JP S5679433A JP 15650579 A JP15650579 A JP 15650579A JP 15650579 A JP15650579 A JP 15650579A JP S5679433 A JPS5679433 A JP S5679433A
- Authority
- JP
- Japan
- Prior art keywords
- film
- ultra fine
- fine pattern
- forming
- base layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- QXYJCZRRLLQGCR-UHFFFAOYSA-N dioxomolybdenum Chemical compound O=[Mo]=O QXYJCZRRLLQGCR-UHFFFAOYSA-N 0.000 abstract 2
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 238000000859 sublimation Methods 0.000 abstract 1
- 230000008022 sublimation Effects 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To facilitate the forming of an ultra fine pattern by a method wherein Mo film is coated on a base layer when the ultra fine pattern electrode is formed on a semiconductor, antioxide film layer is made on the film in accordance with the pattern to be left, heat treated in an oxidation atmosphere to sublimate the Mo film in the exposed area. CONSTITUTION:Mo film layer 2 is coated on a surface of the base layer 1, anitoxide film 3 such as Al film, Si3N4 film SiO2 film etc. is arranged in accordance with the desired pattern, heat treated at a temperature higher than 400 deg.C in the atmosphere of O2 of which pressure is decreased or increased, and the Mo film 2 in the exposed area is changed to the film 4 such as MoO2, MoO3 etc. Similarly, the sublimation of the film 4 is used to sublimate the same to keep the Mo film 2 of ultra fine pattern only below the film 3. With this arrangement, regardless of the material quality of the base layer, a forming of the ultra fine pattern can be facilitated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15650579A JPS5679433A (en) | 1979-11-30 | 1979-11-30 | Forming of ultra fine pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15650579A JPS5679433A (en) | 1979-11-30 | 1979-11-30 | Forming of ultra fine pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5679433A true JPS5679433A (en) | 1981-06-30 |
Family
ID=15629222
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15650579A Pending JPS5679433A (en) | 1979-11-30 | 1979-11-30 | Forming of ultra fine pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5679433A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58161344A (en) * | 1982-03-19 | 1983-09-24 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
| JPS63127641U (en) * | 1986-08-12 | 1988-08-22 | ||
| CN102583544A (en) * | 2012-02-08 | 2012-07-18 | 中国矿业大学 | Method for preparing molybdenum trioxide by utilizing waste silicon molybdenum rod |
-
1979
- 1979-11-30 JP JP15650579A patent/JPS5679433A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58161344A (en) * | 1982-03-19 | 1983-09-24 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
| JPH041497B2 (en) * | 1982-03-19 | 1992-01-13 | Oki Electric Ind Co Ltd | |
| JPS63127641U (en) * | 1986-08-12 | 1988-08-22 | ||
| CN102583544A (en) * | 2012-02-08 | 2012-07-18 | 中国矿业大学 | Method for preparing molybdenum trioxide by utilizing waste silicon molybdenum rod |
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