JPS5678156A - Charge pump semiconductor memory - Google Patents

Charge pump semiconductor memory

Info

Publication number
JPS5678156A
JPS5678156A JP15533679A JP15533679A JPS5678156A JP S5678156 A JPS5678156 A JP S5678156A JP 15533679 A JP15533679 A JP 15533679A JP 15533679 A JP15533679 A JP 15533679A JP S5678156 A JPS5678156 A JP S5678156A
Authority
JP
Japan
Prior art keywords
layer
type
region
electrode
insulating substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15533679A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6143859B2 (enrdf_load_stackoverflow
Inventor
Nobuo Sasaki
Motoo Nakano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15533679A priority Critical patent/JPS5678156A/ja
Publication of JPS5678156A publication Critical patent/JPS5678156A/ja
Publication of JPS6143859B2 publication Critical patent/JPS6143859B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

Landscapes

  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP15533679A 1979-11-30 1979-11-30 Charge pump semiconductor memory Granted JPS5678156A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15533679A JPS5678156A (en) 1979-11-30 1979-11-30 Charge pump semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15533679A JPS5678156A (en) 1979-11-30 1979-11-30 Charge pump semiconductor memory

Publications (2)

Publication Number Publication Date
JPS5678156A true JPS5678156A (en) 1981-06-26
JPS6143859B2 JPS6143859B2 (enrdf_load_stackoverflow) 1986-09-30

Family

ID=15603657

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15533679A Granted JPS5678156A (en) 1979-11-30 1979-11-30 Charge pump semiconductor memory

Country Status (1)

Country Link
JP (1) JPS5678156A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS627150A (ja) * 1985-07-03 1987-01-14 Agency Of Ind Science & Technol 半導体装置における書込み、読出し方法
EP0902482A1 (en) * 1997-09-05 1999-03-17 Sharp Kabushiki Kaisha SOI-MOSFET and fabrication process thereof
EP1180799A3 (en) * 2000-08-17 2005-09-28 Kabushiki Kaisha Toshiba Semiconductor memory device and method of manufacturing the same

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS627150A (ja) * 1985-07-03 1987-01-14 Agency Of Ind Science & Technol 半導体装置における書込み、読出し方法
EP0902482A1 (en) * 1997-09-05 1999-03-17 Sharp Kabushiki Kaisha SOI-MOSFET and fabrication process thereof
US6288425B1 (en) 1997-09-05 2001-09-11 Sharp Kabushiki Kaisha SOI-MOSFET device
EP1180799A3 (en) * 2000-08-17 2005-09-28 Kabushiki Kaisha Toshiba Semiconductor memory device and method of manufacturing the same
US7242608B2 (en) 2000-08-17 2007-07-10 Kabushiki Kaisha Toshiba Semiconductor memory device having a floating storage bulk region capable of holding/emitting excessive majority carriers
US7257015B2 (en) 2000-08-17 2007-08-14 Kabushiki Kaisha Toshiba Semiconductor memory device having a floating storage bulk region
US7710785B2 (en) 2000-08-17 2010-05-04 Kabushiki Kaisha Toshiba Semiconductor memory device having a floating storage bulk region capable of holding/emitting excessive majority carriers
US7855920B2 (en) 2000-08-17 2010-12-21 Kabushiki Kaisha Toshiba Semiconductor memory device having a floating storage bulk region capable of holding/emitting excessive majority carriers

Also Published As

Publication number Publication date
JPS6143859B2 (enrdf_load_stackoverflow) 1986-09-30

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