JPS5674929A - Insulating layer forming method - Google Patents
Insulating layer forming methodInfo
- Publication number
- JPS5674929A JPS5674929A JP15185279A JP15185279A JPS5674929A JP S5674929 A JPS5674929 A JP S5674929A JP 15185279 A JP15185279 A JP 15185279A JP 15185279 A JP15185279 A JP 15185279A JP S5674929 A JPS5674929 A JP S5674929A
- Authority
- JP
- Japan
- Prior art keywords
- concentration
- injected
- ion
- layer
- distribution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 238000002347 injection Methods 0.000 abstract 4
- 239000007924 injection Substances 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15185279A JPS5674929A (en) | 1979-11-22 | 1979-11-22 | Insulating layer forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15185279A JPS5674929A (en) | 1979-11-22 | 1979-11-22 | Insulating layer forming method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5674929A true JPS5674929A (en) | 1981-06-20 |
| JPS6212658B2 JPS6212658B2 (enrdf_load_stackoverflow) | 1987-03-19 |
Family
ID=15527668
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15185279A Granted JPS5674929A (en) | 1979-11-22 | 1979-11-22 | Insulating layer forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5674929A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3139904B2 (ja) * | 1993-12-28 | 2001-03-05 | 新日本製鐵株式会社 | 半導体基板の製造方法および製造装置 |
| KR102482185B1 (ko) | 2022-09-15 | 2022-12-29 | (주)코리아테크 | 스틱형 용기 |
| KR102484068B1 (ko) | 2021-10-22 | 2023-01-04 | (주)코리아테크 | 스틱형 용기 |
-
1979
- 1979-11-22 JP JP15185279A patent/JPS5674929A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6212658B2 (enrdf_load_stackoverflow) | 1987-03-19 |
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